DE69003321T2 - MOS-integrierte Schaltung mit regelbarer Schwellspannung. - Google Patents
MOS-integrierte Schaltung mit regelbarer Schwellspannung.Info
- Publication number
- DE69003321T2 DE69003321T2 DE90402010T DE69003321T DE69003321T2 DE 69003321 T2 DE69003321 T2 DE 69003321T2 DE 90402010 T DE90402010 T DE 90402010T DE 69003321 T DE69003321 T DE 69003321T DE 69003321 T2 DE69003321 T2 DE 69003321T2
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- threshold voltage
- adjustable threshold
- mos integrated
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8909780A FR2650109B1 (fr) | 1989-07-20 | 1989-07-20 | Circuit integre mos a tension de seuil ajustable |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69003321D1 DE69003321D1 (de) | 1993-10-21 |
| DE69003321T2 true DE69003321T2 (de) | 1994-01-13 |
Family
ID=9383970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE90402010T Expired - Fee Related DE69003321T2 (de) | 1989-07-20 | 1990-07-12 | MOS-integrierte Schaltung mit regelbarer Schwellspannung. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5394359A (de) |
| EP (1) | EP0409697B1 (de) |
| JP (1) | JP2860308B2 (de) |
| CA (1) | CA2021585C (de) |
| DE (1) | DE69003321T2 (de) |
| ES (1) | ES2047286T3 (de) |
| FR (1) | FR2650109B1 (de) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5103160A (en) * | 1991-04-25 | 1992-04-07 | Hughes Aircraft Company | Shunt regulator with tunnel oxide reference |
| US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
| US5657332A (en) * | 1992-05-20 | 1997-08-12 | Sandisk Corporation | Soft errors handling in EEPROM devices |
| US5828601A (en) * | 1993-12-01 | 1998-10-27 | Advanced Micro Devices, Inc. | Programmed reference |
| JP2848223B2 (ja) * | 1993-12-01 | 1999-01-20 | 日本電気株式会社 | 不揮発性半導体記憶装置の消去方法及び製造方法 |
| US5440505A (en) * | 1994-01-21 | 1995-08-08 | Intel Corporation | Method and circuitry for storing discrete amounts of charge in a single memory element |
| WO1995034075A1 (en) * | 1994-06-02 | 1995-12-14 | Intel Corporation | Sensing schemes for flash memory with multilevel cells |
| US5508958A (en) * | 1994-09-29 | 1996-04-16 | Intel Corporation | Method and apparatus for sensing the state of floating gate memory cells by applying a variable gate voltage |
| US5495453A (en) * | 1994-10-19 | 1996-02-27 | Intel Corporation | Low power voltage detector circuit including a flash memory cell |
| GB9424598D0 (en) * | 1994-12-06 | 1995-01-25 | Philips Electronics Uk Ltd | Semiconductor memory with non-volatile memory transistor |
| US5550772A (en) * | 1995-02-13 | 1996-08-27 | National Semiconductor Corporation | Memory array utilizing multi-state memory cells |
| WO1996033496A1 (en) * | 1995-04-21 | 1996-10-24 | Advanced Micro Devices, Inc. | Reference for cmos memory cell having pmos and nmos transistors with a common floating gate |
| JP3562043B2 (ja) * | 1995-07-19 | 2004-09-08 | ソニー株式会社 | 不揮発性記憶装置 |
| FR2739706B1 (fr) * | 1995-10-09 | 1997-11-21 | Inside Technologies | Perfectionnements aux cartes a memoire |
| FR2739737B1 (fr) * | 1995-10-09 | 1997-11-21 | Inside Technologies | Perfectionnements aux cartes a memoire |
| US5677869A (en) * | 1995-12-14 | 1997-10-14 | Intel Corporation | Programming flash memory using strict ordering of states |
| US5737265A (en) * | 1995-12-14 | 1998-04-07 | Intel Corporation | Programming flash memory using data stream analysis |
| US5701266A (en) * | 1995-12-14 | 1997-12-23 | Intel Corporation | Programming flash memory using distributed learning methods |
| US5729489A (en) * | 1995-12-14 | 1998-03-17 | Intel Corporation | Programming flash memory using predictive learning methods |
| EP0833453B1 (de) * | 1996-09-30 | 2003-05-14 | STMicroelectronics S.r.l. | Digital-Analog-Wandler des Stromtyps mit IG-MOS-Transistoren |
| EP0840452B1 (de) * | 1996-10-30 | 2001-07-18 | STMicroelectronics S.r.l. | Spannungsvergleicher mit mindestens einem Isolierschicht-MOS-Transistor und damit ausgerüstete Analog-Digital-Wandler |
| JP3460170B2 (ja) * | 1997-02-03 | 2003-10-27 | シャープ株式会社 | 薄膜トランジスタ及びその製造方法 |
| US5909449A (en) * | 1997-09-08 | 1999-06-01 | Invox Technology | Multibit-per-cell non-volatile memory with error detection and correction |
| JP4252183B2 (ja) * | 2000-02-17 | 2009-04-08 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置、該不揮発性半導体記憶装置からのデータの読み出し方法及び、該不揮発性半導体記憶装置へのデータの書き込み方法 |
| US6396744B1 (en) | 2000-04-25 | 2002-05-28 | Multi Level Memory Technology | Flash memory with dynamic refresh |
| US6856568B1 (en) | 2000-04-25 | 2005-02-15 | Multi Level Memory Technology | Refresh operations that change address mappings in a non-volatile memory |
| US7079422B1 (en) | 2000-04-25 | 2006-07-18 | Samsung Electronics Co., Ltd. | Periodic refresh operations for non-volatile multiple-bit-per-cell memory |
| US7055007B2 (en) * | 2003-04-10 | 2006-05-30 | Arm Limited | Data processor memory circuit |
| US7012835B2 (en) * | 2003-10-03 | 2006-03-14 | Sandisk Corporation | Flash memory data correction and scrub techniques |
| US7173852B2 (en) * | 2003-10-03 | 2007-02-06 | Sandisk Corporation | Corrected data storage and handling methods |
| JP4519713B2 (ja) * | 2004-06-17 | 2010-08-04 | 株式会社東芝 | 整流回路とこれを用いた無線通信装置 |
| US7315916B2 (en) * | 2004-12-16 | 2008-01-01 | Sandisk Corporation | Scratch pad block |
| US7395404B2 (en) * | 2004-12-16 | 2008-07-01 | Sandisk Corporation | Cluster auto-alignment for storing addressable data packets in a non-volatile memory array |
| US7886204B2 (en) * | 2006-09-27 | 2011-02-08 | Sandisk Corporation | Methods of cell population distribution assisted read margining |
| US7716538B2 (en) * | 2006-09-27 | 2010-05-11 | Sandisk Corporation | Memory with cell population distribution assisted read margining |
| US7573773B2 (en) * | 2007-03-28 | 2009-08-11 | Sandisk Corporation | Flash memory with data refresh triggered by controlled scrub data reads |
| US7477547B2 (en) * | 2007-03-28 | 2009-01-13 | Sandisk Corporation | Flash memory refresh techniques triggered by controlled scrub data reads |
| FR2927732B1 (fr) | 2008-02-19 | 2011-05-27 | Commissariat Energie Atomique | Procede d'ajustement de la tension de seuil d'un transistor par une couche de piegeage enterree |
| US8878511B2 (en) * | 2010-02-04 | 2014-11-04 | Semiconductor Components Industries, Llc | Current-mode programmable reference circuits and methods therefor |
| US8188785B2 (en) | 2010-02-04 | 2012-05-29 | Semiconductor Components Industries, Llc | Mixed-mode circuits and methods of producing a reference current and a reference voltage |
| US8680840B2 (en) * | 2010-02-11 | 2014-03-25 | Semiconductor Components Industries, Llc | Circuits and methods of producing a reference current or voltage |
| KR20180105252A (ko) * | 2010-09-03 | 2018-09-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 및 반도체 장치의 제조 방법 |
| US8687421B2 (en) | 2011-11-21 | 2014-04-01 | Sandisk Technologies Inc. | Scrub techniques for use with dynamic read |
| JP5779162B2 (ja) | 2012-09-28 | 2015-09-16 | 株式会社東芝 | 整流回路とこれを用いた無線通信装置 |
| US9230689B2 (en) | 2014-03-17 | 2016-01-05 | Sandisk Technologies Inc. | Finding read disturbs on non-volatile memories |
| DE102014112001A1 (de) * | 2014-08-21 | 2016-02-25 | Infineon Technologies Austria Ag | Integrierte Schaltung mit einem Eingangstransistor einschließlich einer Ladungsspeicherstruktur |
| JP2016058633A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社東芝 | 撮像装置 |
| US9552171B2 (en) | 2014-10-29 | 2017-01-24 | Sandisk Technologies Llc | Read scrub with adaptive counter management |
| US9978456B2 (en) | 2014-11-17 | 2018-05-22 | Sandisk Technologies Llc | Techniques for reducing read disturb in partially written blocks of non-volatile memory |
| US9349479B1 (en) | 2014-11-18 | 2016-05-24 | Sandisk Technologies Inc. | Boundary word line operation in nonvolatile memory |
| US9449700B2 (en) | 2015-02-13 | 2016-09-20 | Sandisk Technologies Llc | Boundary word line search and open block read methods with reduced read disturb |
| US9653154B2 (en) | 2015-09-21 | 2017-05-16 | Sandisk Technologies Llc | Write abort detection for multi-state memories |
| US10446567B2 (en) * | 2017-03-31 | 2019-10-15 | Asahi Kasei Microdevices Corporation | Nonvolatile storage element and reference voltage generation circuit |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2514582C2 (de) * | 1975-04-03 | 1977-05-26 | Siemens Ag | Schaltung zur erzeugung von leseimpulsen |
| US4357571A (en) * | 1978-09-29 | 1982-11-02 | Siemens Aktiengesellschaft | FET Module with reference source chargeable memory gate |
| IT1224062B (it) * | 1979-09-28 | 1990-09-26 | Ates Componenti Elettron | Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile |
| US4336603A (en) * | 1980-06-18 | 1982-06-22 | International Business Machines Corp. | Three terminal electrically erasable programmable read only memory |
| US4542485A (en) * | 1981-01-14 | 1985-09-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit |
| DE3108726A1 (de) * | 1981-03-07 | 1982-09-16 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte referenzspannungsquelle |
| US4495602A (en) * | 1981-12-28 | 1985-01-22 | Mostek Corporation | Multi-bit read only memory circuit |
| GB2126787B (en) * | 1982-03-09 | 1985-10-16 | Rca Corp | An electrically alterable nonvolatile floating-gate memory device |
| US4577215A (en) * | 1983-02-18 | 1986-03-18 | Rca Corporation | Dual word line, electrically alterable, nonvolatile floating gate memory device |
| JPS5984398A (ja) * | 1982-11-08 | 1984-05-16 | Hitachi Ltd | Ｅｅｐｒｏｍ装置 |
| JPS6032363A (ja) * | 1983-08-02 | 1985-02-19 | Nec Corp | 不揮発性半導体記憶装置の製造方法 |
| JPS6084836A (ja) * | 1983-10-17 | 1985-05-14 | Hitachi Ltd | 半導体装置 |
| JPH0638318B2 (ja) * | 1985-02-15 | 1994-05-18 | 株式会社リコー | Ｅｐｒｏｍの書込み方法 |
| JPH0772996B2 (ja) * | 1987-01-31 | 1995-08-02 | 株式会社東芝 | 不揮発性半導体メモリ |
| JPS63221415A (ja) * | 1987-03-11 | 1988-09-14 | Sony Corp | 基準電圧発生装置 |
| JPH01113999A (ja) * | 1987-10-28 | 1989-05-02 | Toshiba Corp | 不揮発性メモリのストレステスト回路 |
| US4888630A (en) * | 1988-03-21 | 1989-12-19 | Texas Instruments Incorporated | Floating-gate transistor with a non-linear intergate dielectric |
-
1989
- 1989-07-20 FR FR8909780A patent/FR2650109B1/fr not_active Expired - Fee Related
-
1990
- 1990-07-12 ES ES90402010T patent/ES2047286T3/es not_active Expired - Lifetime
- 1990-07-12 EP EP90402010A patent/EP0409697B1/de not_active Expired - Lifetime
- 1990-07-12 DE DE90402010T patent/DE69003321T2/de not_active Expired - Fee Related
- 1990-07-19 CA CA002021585A patent/CA2021585C/fr not_active Expired - Fee Related
- 1990-07-20 JP JP19282890A patent/JP2860308B2/ja not_active Expired - Fee Related
-
1992
- 1992-09-14 US US07/944,811 patent/US5394359A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2650109B1 (fr) | 1993-04-02 |
| CA2021585C (fr) | 1994-02-22 |
| JP2860308B2 (ja) | 1999-02-24 |
| DE69003321D1 (de) | 1993-10-21 |
| JPH03214779A (ja) | 1991-09-19 |
| EP0409697B1 (de) | 1993-09-15 |
| CA2021585A1 (fr) | 1991-01-21 |
| ES2047286T3 (es) | 1994-02-16 |
| EP0409697A1 (de) | 1991-01-23 |
| FR2650109A1 (fr) | 1991-01-25 |
| US5394359A (en) | 1995-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |