DE69003740T2 - Halbleiterlaser mit Lokalisierung des Stroms. - Google Patents

Halbleiterlaser mit Lokalisierung des Stroms.

Info

Publication number
DE69003740T2
DE69003740T2 DE90401259T DE69003740T DE69003740T2 DE 69003740 T2 DE69003740 T2 DE 69003740T2 DE 90401259 T DE90401259 T DE 90401259T DE 69003740 T DE69003740 T DE 69003740T DE 69003740 T2 DE69003740 T2 DE 69003740T2
Authority
DE
Germany
Prior art keywords
localization
current
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90401259T
Other languages
English (en)
Other versions
DE69003740D1 (de
Inventor
Christian Tanguy
Gerard Marquebielle
Guy Mesquida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Hybrides
Original Assignee
Thomson Hybrides
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Hybrides filed Critical Thomson Hybrides
Publication of DE69003740D1 publication Critical patent/DE69003740D1/de
Application granted granted Critical
Publication of DE69003740T2 publication Critical patent/DE69003740T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
DE90401259T 1989-06-02 1990-05-11 Halbleiterlaser mit Lokalisierung des Stroms. Expired - Fee Related DE69003740T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8907309A FR2647966B1 (fr) 1989-06-02 1989-06-02 Laser semiconducteur a localisation de courant

Publications (2)

Publication Number Publication Date
DE69003740D1 DE69003740D1 (de) 1993-11-11
DE69003740T2 true DE69003740T2 (de) 1994-01-27

Family

ID=9382308

Family Applications (1)

Application Number Title Priority Date Filing Date
DE90401259T Expired - Fee Related DE69003740T2 (de) 1989-06-02 1990-05-11 Halbleiterlaser mit Lokalisierung des Stroms.

Country Status (4)

Country Link
US (1) US5036522A (de)
EP (1) EP0401071B1 (de)
DE (1) DE69003740T2 (de)
FR (1) FR2647966B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309465A (en) * 1992-11-05 1994-05-03 International Business Machines Corporation Ridge waveguide semiconductor laser with thin active region
US5544190A (en) * 1994-11-17 1996-08-06 Phillips Electronics North America Corporation II-VI Semiconductor diode laser with lateral current confinement
US6907056B2 (en) * 2003-08-08 2005-06-14 Wisconsin Alumni Research Foundation Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers
DE102011083581A1 (de) * 2011-09-28 2013-03-28 Humboldt-Universität Zu Berlin Verfahren zum herstellen eines lasers

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893044A (en) * 1973-04-12 1975-07-01 Ibm Laser device having enclosed laser cavity
JPS5896791A (ja) * 1981-12-04 1983-06-08 Fujitsu Ltd 半導体発光装置の製造方法
JPS61220392A (ja) * 1985-03-26 1986-09-30 Toshiba Corp 半導体発光素子
DE3783226T2 (de) * 1986-12-26 1993-04-29 Matsushita Electric Ind Co Ltd Verfahren zur herstellung einer halbleitervorrichtung.

Also Published As

Publication number Publication date
DE69003740D1 (de) 1993-11-11
EP0401071B1 (de) 1993-10-06
EP0401071A1 (de) 1990-12-05
US5036522A (en) 1991-07-30
FR2647966B1 (fr) 1991-08-16
FR2647966A1 (fr) 1990-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee