DE69013267T2 - Integrierte Halbleiterschaltungsanordnung. - Google Patents
Integrierte Halbleiterschaltungsanordnung.Info
- Publication number
- DE69013267T2 DE69013267T2 DE69013267T DE69013267T DE69013267T2 DE 69013267 T2 DE69013267 T2 DE 69013267T2 DE 69013267 T DE69013267 T DE 69013267T DE 69013267 T DE69013267 T DE 69013267T DE 69013267 T2 DE69013267 T2 DE 69013267T2
- Authority
- DE
- Germany
- Prior art keywords
- circuit arrangement
- semiconductor circuit
- integrated semiconductor
- integrated
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1209167A JPH065705B2 (ja) | 1989-08-11 | 1989-08-11 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69013267D1 DE69013267D1 (de) | 1994-11-17 |
| DE69013267T2 true DE69013267T2 (de) | 1995-03-16 |
Family
ID=16568442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69013267T Expired - Fee Related DE69013267T2 (de) | 1989-08-11 | 1990-08-10 | Integrierte Halbleiterschaltungsanordnung. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5079612A (de) |
| EP (1) | EP0412561B1 (de) |
| JP (1) | JPH065705B2 (de) |
| KR (1) | KR930011797B1 (de) |
| DE (1) | DE69013267T2 (de) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS633055A (ja) * | 1986-06-24 | 1988-01-08 | Mitsubishi Chem Ind Ltd | インサ−ト成形品 |
| JP2742735B2 (ja) * | 1991-07-30 | 1998-04-22 | 三菱電機株式会社 | 半導体集積回路装置およびそのレイアウト設計方法 |
| KR940009605B1 (ko) * | 1991-09-16 | 1994-10-15 | 삼성전자 주식회사 | 반도체 메모리의 정전방전 보호장치 |
| EP0610430B1 (de) * | 1991-10-30 | 1999-03-10 | Harris Corporation | Analog/digitalwanlder und herstellungsverfahren |
| US5272371A (en) * | 1991-11-19 | 1993-12-21 | Sgs-Thomson Microelectronics, Inc. | Electrostatic discharge protection structure |
| US5535084A (en) * | 1992-07-24 | 1996-07-09 | Kawasaki Steel Corporation | Semiconductor integrated circuit having protection circuits |
| JP2972494B2 (ja) | 1993-06-30 | 1999-11-08 | 日本電気株式会社 | 半導体装置 |
| US5372951A (en) * | 1993-10-01 | 1994-12-13 | Advanced Micro Devices, Inc. | Method of making a semiconductor having selectively enhanced field oxide areas |
| JP2636773B2 (ja) * | 1995-01-25 | 1997-07-30 | 日本電気株式会社 | 半導体集積回路装置 |
| ATE229230T1 (de) * | 1995-04-06 | 2002-12-15 | Infineon Technologies Ag | Integrierte halbleiterschaltung mit einem schutzmittel |
| JP2636804B2 (ja) * | 1995-05-30 | 1997-07-30 | 日本電気株式会社 | 半導体装置 |
| JP2834034B2 (ja) * | 1995-06-22 | 1998-12-09 | 日本電気アイシーマイコンシステム株式会社 | 半導体装置 |
| WO1997010615A1 (en) * | 1995-09-11 | 1997-03-20 | Analog Devices, Inc. (Adi) | Electrostatic discharge protection network and method |
| KR100211539B1 (ko) | 1995-12-29 | 1999-08-02 | 김영환 | 반도체소자의 정전기방전 보호장치 및 그 제조방법 |
| US5721658A (en) * | 1996-04-01 | 1998-02-24 | Micron Technology, Inc. | Input/output electrostatic discharge protection for devices with multiple individual power groups |
| JP3017083B2 (ja) * | 1996-04-10 | 2000-03-06 | 日本電気株式会社 | 入出力保護回路 |
| US5875089A (en) * | 1996-04-22 | 1999-02-23 | Mitsubishi Denki Kabushiki Kaisha | Input protection circuit device |
| US5757208A (en) * | 1996-05-01 | 1998-05-26 | Motorola, Inc. | Programmable array and method for routing power busses therein |
| EP0976190A1 (de) * | 1997-04-16 | 2000-02-02 | The Board Of Trustees Of The Leland Stanford Junior University | Verteilter esd-schutz für hochgeschwindigkeitsintegrierte schaltungen |
| US6445039B1 (en) * | 1998-11-12 | 2002-09-03 | Broadcom Corporation | System and method for ESD Protection |
| US8405152B2 (en) | 1999-01-15 | 2013-03-26 | Broadcom Corporation | System and method for ESD protection |
| US7687858B2 (en) * | 1999-01-15 | 2010-03-30 | Broadcom Corporation | System and method for ESD protection |
| WO2000042659A2 (en) * | 1999-01-15 | 2000-07-20 | Broadcom Corporation | System and method for esd protection |
| EP1301972B1 (de) * | 2000-07-13 | 2016-03-23 | Broadcom Corporation | Methoden und systeme zur verbesserung der antwortzeit einer esd-klemmschaltung |
| DE10102354C1 (de) * | 2001-01-19 | 2002-08-08 | Infineon Technologies Ag | Halbleiter-Bauelement mit ESD-Schutz |
| US6947273B2 (en) * | 2001-01-29 | 2005-09-20 | Primarion, Inc. | Power, ground, and routing scheme for a microprocessor power regulator |
| FR2831328A1 (fr) * | 2001-10-23 | 2003-04-25 | St Microelectronics Sa | Protection d'un circuit integre contre des decharges electrostatiques et autres surtensions |
| JP3908669B2 (ja) * | 2003-01-20 | 2007-04-25 | 株式会社東芝 | 静電気放電保護回路装置 |
| WO2005053028A1 (ja) * | 2003-11-27 | 2005-06-09 | Matsushita Electric Industrial Co., Ltd. | 静電破壊保護素子を備えた半導体装置 |
| US20070158817A1 (en) * | 2004-03-12 | 2007-07-12 | Rohm Co., Ltd. | Semiconductor device |
| US7439592B2 (en) * | 2004-12-13 | 2008-10-21 | Broadcom Corporation | ESD protection for high voltage applications |
| US7505238B2 (en) * | 2005-01-07 | 2009-03-17 | Agnes Neves Woo | ESD configuration for low parasitic capacitance I/O |
| JP2006237101A (ja) | 2005-02-23 | 2006-09-07 | Nec Electronics Corp | 半導体集積回路装置 |
| JP5337173B2 (ja) * | 2011-01-07 | 2013-11-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58124262A (ja) * | 1982-01-20 | 1983-07-23 | Nec Corp | 集積回路装置 |
| US4819047A (en) * | 1987-05-15 | 1989-04-04 | Advanced Micro Devices, Inc. | Protection system for CMOS integrated circuits |
| US4990802A (en) * | 1988-11-22 | 1991-02-05 | At&T Bell Laboratories | ESD protection for output buffers |
-
1989
- 1989-08-11 JP JP1209167A patent/JPH065705B2/ja not_active Expired - Fee Related
-
1990
- 1990-08-09 US US07/564,615 patent/US5079612A/en not_active Expired - Lifetime
- 1990-08-10 DE DE69013267T patent/DE69013267T2/de not_active Expired - Fee Related
- 1990-08-10 EP EP90115402A patent/EP0412561B1/de not_active Expired - Lifetime
- 1990-08-11 KR KR1019900012365A patent/KR930011797B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0412561A3 (en) | 1991-05-29 |
| DE69013267D1 (de) | 1994-11-17 |
| JPH065705B2 (ja) | 1994-01-19 |
| KR910005468A (ko) | 1991-03-30 |
| US5079612A (en) | 1992-01-07 |
| EP0412561B1 (de) | 1994-10-12 |
| EP0412561A2 (de) | 1991-02-13 |
| JPH0372666A (ja) | 1991-03-27 |
| KR930011797B1 (ko) | 1993-12-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |