DE69014871T2 - Verfahren zur Bildung metallischer Kontaktflächen und Anschlüsse auf Halbleiterchips. - Google Patents

Verfahren zur Bildung metallischer Kontaktflächen und Anschlüsse auf Halbleiterchips.

Info

Publication number
DE69014871T2
DE69014871T2 DE69014871T DE69014871T DE69014871T2 DE 69014871 T2 DE69014871 T2 DE 69014871T2 DE 69014871 T DE69014871 T DE 69014871T DE 69014871 T DE69014871 T DE 69014871T DE 69014871 T2 DE69014871 T2 DE 69014871T2
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DE
Germany
Prior art keywords
connections
formation
contact surfaces
semiconductor chips
metallic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69014871T
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English (en)
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DE69014871D1 (de
Inventor
Henri Lochon
Georges Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69014871D1 publication Critical patent/DE69014871D1/de
Publication of DE69014871T2 publication Critical patent/DE69014871T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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DE69014871T 1990-07-31 1990-07-31 Verfahren zur Bildung metallischer Kontaktflächen und Anschlüsse auf Halbleiterchips. Expired - Fee Related DE69014871T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP90480110A EP0469216B1 (de) 1990-07-31 1990-07-31 Verfahren zur Bildung metallischer Kontaktflächen und Anschlüsse auf Halbleiterchips

Publications (2)

Publication Number Publication Date
DE69014871D1 DE69014871D1 (de) 1995-01-19
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EP0469216A1 (de) 1992-02-05
EP0469216B1 (de) 1994-12-07
US5137845A (en) 1992-08-11
JPH05218043A (ja) 1993-08-27
JPH0715910B2 (ja) 1995-02-22
DE69014871D1 (de) 1995-01-19

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