DE69016392D1 - Verfahren und Vorrichtung zur Züchtung von Kristallen. - Google Patents
Verfahren und Vorrichtung zur Züchtung von Kristallen.Info
- Publication number
- DE69016392D1 DE69016392D1 DE69016392T DE69016392T DE69016392D1 DE 69016392 D1 DE69016392 D1 DE 69016392D1 DE 69016392 T DE69016392 T DE 69016392T DE 69016392 T DE69016392 T DE 69016392T DE 69016392 D1 DE69016392 D1 DE 69016392D1
- Authority
- DE
- Germany
- Prior art keywords
- growing crystals
- crystals
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/445,522 US4966645A (en) | 1989-12-04 | 1989-12-04 | Crystal growth method and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69016392D1 true DE69016392D1 (de) | 1995-03-09 |
DE69016392T2 DE69016392T2 (de) | 1995-05-24 |
Family
ID=23769240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69016392T Expired - Lifetime DE69016392T2 (de) | 1989-12-04 | 1990-11-23 | Verfahren und Vorrichtung zur Züchtung von Kristallen. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4966645A (de) |
EP (1) | EP0435454B1 (de) |
JP (1) | JPH03177400A (de) |
KR (1) | KR0165847B1 (de) |
DE (1) | DE69016392T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5123996A (en) * | 1991-01-28 | 1992-06-23 | At&T Bell Laboratories | Crystal growth method and apparatus |
US5372088A (en) * | 1991-12-30 | 1994-12-13 | At&T Bell Laboratories | Crystal growth method and apparatus |
JPH07291777A (ja) * | 1994-04-21 | 1995-11-07 | Toshiba Corp | 半導体単結晶製造装置及び製造方法 |
DE19954349A1 (de) * | 1999-11-11 | 2001-06-07 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
FR3095972B1 (fr) | 2019-05-13 | 2023-07-07 | Safran Aircraft Engines | Moule pour la fabrication d’une pièce par coulée de métal et croissance épitaxiale et procédé de fabrication associé |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4054010A (en) * | 1976-01-20 | 1977-10-18 | Headway Research, Inc. | Apparatus for grinding edges of planar workpieces |
US4224099A (en) * | 1978-08-10 | 1980-09-23 | Union Carbide Corporation | Method for producing R-plane single crystal alpha alumina |
US4344260A (en) * | 1979-07-13 | 1982-08-17 | Nagano Electronics Industrial Co., Ltd. | Method for precision shaping of wafer materials |
JPS56105638A (en) * | 1980-01-26 | 1981-08-22 | Sumitomo Electric Ind Ltd | Manufacture of circular gallium arsenide wafer |
JPS5758218U (de) * | 1980-09-22 | 1982-04-06 | ||
US4404172A (en) * | 1981-01-05 | 1983-09-13 | Western Electric Company, Inc. | Method and apparatus for forming and growing a single crystal of a semiconductor compound |
FR2546912B1 (fr) * | 1983-06-06 | 1987-07-10 | Commissariat Energie Atomique | Procede et dispositif d'elaboration d'un monocristal |
-
1989
- 1989-12-04 US US07/445,522 patent/US4966645A/en not_active Expired - Lifetime
-
1990
- 1990-11-05 JP JP2297382A patent/JPH03177400A/ja active Pending
- 1990-11-23 DE DE69016392T patent/DE69016392T2/de not_active Expired - Lifetime
- 1990-11-23 EP EP90312800A patent/EP0435454B1/de not_active Expired - Lifetime
- 1990-11-27 KR KR1019900019254A patent/KR0165847B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69016392T2 (de) | 1995-05-24 |
JPH03177400A (ja) | 1991-08-01 |
KR0165847B1 (ko) | 1998-12-15 |
EP0435454A1 (de) | 1991-07-03 |
EP0435454B1 (de) | 1995-01-25 |
US4966645A (en) | 1990-10-30 |
KR910013456A (ko) | 1991-08-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE68918049D1 (de) | Verfahren und Vorrichtung zur epitaktischen Züchtung. | |
DE68907344T2 (de) | Verfahren und Vorrichtung zur Anzeige von Urinbestandteilen. | |
DE3886745T2 (de) | Verfahren und vorrichtung zur intrauterinen befruchtung. | |
DE68928468T2 (de) | Vorrichtung und Verfahren zur Kühlung von Substraten | |
DE3863887D1 (de) | Verfahren zum zuechten von homogenen kristallen und vorrichtung zur durchfuehrung des verfahrens. | |
DE3877773D1 (de) | Vorrichtung und verfahren zur impfung von fischen. | |
DE3779278D1 (de) | Verfahren und programmierbare vorrichtung zur umkodierung von zeichenketten. | |
DE3480721D1 (de) | Verfahren und vorrichtung zur herstellung von einkristallen. | |
DE68916157D1 (de) | Vorrichtung und Verfahren zur Züchtung von Kristallen aus Halbleitermaterialien. | |
DE3878990D1 (de) | Vorrichtung und verfahren zur zuechtung von kristallen aus halbleitermaterialien. | |
DE68926031T2 (de) | Verfahren und Vorrichtung zur Entfernung von Unterfarben | |
DE68907184D1 (de) | Verfahren zur zuechtung von kristallen und tiegel dafuer. | |
DE3854145D1 (de) | Vorrichtung und verfahren zur regelung von getrieben. | |
DE69022437T2 (de) | Vorrichtung und Verfahren zur epitaktischen Abscheidung. | |
DE69019324D1 (de) | Verfahren und Vorrichtung zur Verhinderung von Anhängerpendelschwingungen. | |
DE69021546D1 (de) | Verfahren und Vorrichtung zur Photodetektion. | |
DE3853084D1 (de) | Verfahren und vorrichtung zur züchtung von kristallen nach der czochralski-methode. | |
DE3886224D1 (de) | Vorrichtung und verfahren zur positionierung von verpackungen. | |
DE69024662D1 (de) | Vorrichtung und verfahren zur inkubation von eiern | |
DE69016392D1 (de) | Verfahren und Vorrichtung zur Züchtung von Kristallen. | |
DE69007222D1 (de) | Verfahren und Vorrichtung zur Elektroplattierung. | |
DE69203737D1 (de) | Verfahren und Vorrichtung zur Kristallzüchtung. | |
DE69021544D1 (de) | Verfahren und Vorrichtung zur Photodetektion. | |
DE3879192D1 (de) | Verfahren und vorrichtung zur elektrodesionisation. | |
DE3885612D1 (de) | Vorrichtung und verfahren zur zucht von pilzen. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |