DE69020802D1 - Verfahren zum Ausheilen von Halbleitern. - Google Patents
Verfahren zum Ausheilen von Halbleitern.Info
- Publication number
- DE69020802D1 DE69020802D1 DE69020802T DE69020802T DE69020802D1 DE 69020802 D1 DE69020802 D1 DE 69020802D1 DE 69020802 T DE69020802 T DE 69020802T DE 69020802 T DE69020802 T DE 69020802T DE 69020802 D1 DE69020802 D1 DE 69020802D1
- Authority
- DE
- Germany
- Prior art keywords
- annealing process
- semiconductor annealing
- semiconductor
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/071—Heating, selective
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/345,923 US5011794A (en) | 1989-05-01 | 1989-05-01 | Procedure for rapid thermal annealing of implanted semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69020802D1 true DE69020802D1 (de) | 1995-08-17 |
| DE69020802T2 DE69020802T2 (de) | 1995-12-07 |
Family
ID=23357116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69020802T Expired - Fee Related DE69020802T2 (de) | 1989-05-01 | 1990-04-25 | Verfahren zum Ausheilen von Halbleitern. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5011794A (de) |
| EP (1) | EP0399662B1 (de) |
| JP (1) | JPH0750691B2 (de) |
| KR (1) | KR950014610B1 (de) |
| CA (1) | CA2015411C (de) |
| DE (1) | DE69020802T2 (de) |
| ES (1) | ES2074536T3 (de) |
| HK (1) | HK100596A (de) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0645131B2 (ja) * | 1990-03-28 | 1994-06-15 | 日本碍子株式会社 | セラミック長尺成形体乾燥用治具 |
| JPH04198095A (ja) * | 1990-11-28 | 1992-07-17 | Fujitsu Ltd | 化合物半導体薄膜成長方法 |
| DE4140387C2 (de) * | 1991-12-07 | 1998-10-15 | Inst Halbleiterphysik Gmbh | Vorrichtung und Verfahren zur verformungsfreien Bearbeitung von Halbleitermaterialscheiben in schnellen thermischen Prozessen |
| US5820686A (en) * | 1993-01-21 | 1998-10-13 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
| US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
| US5580388A (en) * | 1993-01-21 | 1996-12-03 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
| US5680502A (en) * | 1995-04-03 | 1997-10-21 | Varian Associates, Inc. | Thin film heat treatment apparatus with conductively heated table and surrounding radiation shield |
| US5830277A (en) * | 1995-05-26 | 1998-11-03 | Mattson Technology, Inc. | Thermal processing system with supplemental resistive heater and shielded optical pyrometry |
| US6002109A (en) | 1995-07-10 | 1999-12-14 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
| US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
| US6133550A (en) * | 1996-03-22 | 2000-10-17 | Sandia Corporation | Method and apparatus for thermal processing of semiconductor substrates |
| JP3563224B2 (ja) * | 1996-03-25 | 2004-09-08 | 住友電気工業株式会社 | 半導体ウエハの評価方法、熱処理方法、および熱処理装置 |
| US5837555A (en) * | 1996-04-12 | 1998-11-17 | Ast Electronik | Apparatus and method for rapid thermal processing |
| US6046439A (en) * | 1996-06-17 | 2000-04-04 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
| US6198074B1 (en) | 1996-09-06 | 2001-03-06 | Mattson Technology, Inc. | System and method for rapid thermal processing with transitional heater |
| US7470142B2 (en) * | 2004-06-21 | 2008-12-30 | Sang-Yun Lee | Wafer bonding method |
| JPH10154713A (ja) * | 1996-11-22 | 1998-06-09 | Shin Etsu Handotai Co Ltd | シリコンウエーハの熱処理方法およびシリコンウエーハ |
| US5960158A (en) | 1997-07-11 | 1999-09-28 | Ag Associates | Apparatus and method for filtering light in a thermal processing chamber |
| US6207591B1 (en) * | 1997-11-14 | 2001-03-27 | Kabushiki Kaisha Toshiba | Method and equipment for manufacturing semiconductor device |
| DE19808246B4 (de) | 1998-02-27 | 2004-05-13 | Daimlerchrysler Ag | Verfahren zur Herstellung eines mikroelektronischen Halbleiterbauelements mittels Ionenimplatation |
| US5930456A (en) * | 1998-05-14 | 1999-07-27 | Ag Associates | Heating device for semiconductor wafers |
| US5970214A (en) * | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
| US6210484B1 (en) | 1998-09-09 | 2001-04-03 | Steag Rtp Systems, Inc. | Heating device containing a multi-lamp cone for heating semiconductor wafers |
| US6771895B2 (en) * | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
| US6303411B1 (en) | 1999-05-03 | 2001-10-16 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
| DE19920871B4 (de) | 1999-05-06 | 2004-07-01 | Steag Rtp Systems Gmbh | Verfahren zum Aktivieren von Ladungsträgern durch strahlungsunterstützte Wärmebehandlung |
| US6416318B1 (en) * | 1999-06-16 | 2002-07-09 | Silicon Valley Group, Inc. | Process chamber assembly with reflective hot plate and pivoting lid |
| JP2001007039A (ja) | 1999-06-18 | 2001-01-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| DE19936081A1 (de) * | 1999-07-30 | 2001-02-08 | Siemens Ag | Vorrichtung und Verfahren zum Temperieren eines Mehrschichtkörpers, sowie ein unter Anwendung des Verfahrens hergestellter Mehrschichtkörper |
| ES2353106T3 (es) | 1999-10-20 | 2011-02-25 | Saint-Gobain Glass France S.A. | Dispositivo y procedimiento para la atemperación simultánea de varios productos en proceso. |
| ATE481740T1 (de) * | 1999-10-20 | 2010-10-15 | Saint Gobain | Vorrichtung und verfahren zum temperieren mindestens eines prozessierguts |
| JP4577462B2 (ja) * | 1999-11-05 | 2010-11-10 | 住友電気工業株式会社 | 半導体の熱処理方法 |
| US6342691B1 (en) | 1999-11-12 | 2002-01-29 | Mattson Technology, Inc. | Apparatus and method for thermal processing of semiconductor substrates |
| AU2001252071A1 (en) * | 2000-05-19 | 2001-11-26 | Mcmaster University | A method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (ingaasp) quantum well structures |
| US6797533B2 (en) * | 2000-05-19 | 2004-09-28 | Mcmaster University | Quantum well intermixing in InGaAsP structures induced by low temperature grown InP |
| US6599815B1 (en) * | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
| DE10197002B3 (de) * | 2000-12-04 | 2017-11-23 | Mattson Technology Inc. | Verfahren und System zur Wärmebehandlung |
| US6594446B2 (en) * | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
| TW480677B (en) * | 2001-04-04 | 2002-03-21 | Macronix Int Co Ltd | Method of fabricating a nitride read only memory cell |
| US7231141B2 (en) * | 2001-04-23 | 2007-06-12 | Asm America, Inc. | High temperature drop-off of a substrate |
| US6521503B2 (en) | 2001-04-23 | 2003-02-18 | Asm America, Inc. | High temperature drop-off of a substrate |
| KR100431657B1 (ko) * | 2001-09-25 | 2004-05-17 | 삼성전자주식회사 | 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치 |
| US7026229B2 (en) * | 2001-11-28 | 2006-04-11 | Vartan Semiconductor Equipment Associates, Inc. | Athermal annealing with rapid thermal annealing system and method |
| KR101067902B1 (ko) * | 2001-12-26 | 2011-09-27 | 맷슨 테크날러지 캐나다 인코퍼레이티드 | 온도 측정 및 열처리 방법과 시스템 |
| US7013091B2 (en) * | 2002-01-16 | 2006-03-14 | Pts Corporation | Synchronization of pulse and data sources |
| TW200305228A (en) * | 2002-03-01 | 2003-10-16 | Hitachi Int Electric Inc | Heat treatment apparatus and a method for fabricating substrates |
| US6776849B2 (en) * | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
| US6861321B2 (en) | 2002-04-05 | 2005-03-01 | Asm America, Inc. | Method of loading a wafer onto a wafer holder to reduce thermal shock |
| DE10234694A1 (de) * | 2002-07-30 | 2004-02-12 | Infineon Technologies Ag | Verfahren zum Oxidieren einer Schicht und zugehörige Aufnamevorrichtung für ein Substrat |
| US6933158B1 (en) * | 2002-10-31 | 2005-08-23 | Advanced Micro Devices, Inc. | Method of monitoring anneal processes using scatterometry, and system for performing same |
| FR2846786B1 (fr) * | 2002-11-05 | 2005-06-17 | Procede de recuit thermique rapide de tranches a couronne | |
| US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
| WO2004072323A2 (en) * | 2003-02-07 | 2004-08-26 | Solaicx | High reflectivity atmospheric pressure furnace for preventing contamination of a work piece |
| JP3929939B2 (ja) * | 2003-06-25 | 2007-06-13 | 株式会社東芝 | 処理装置、製造装置、処理方法及び電子装置の製造方法 |
| WO2005059991A1 (en) * | 2003-12-19 | 2005-06-30 | Mattson Technology Canada Inc. | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
| DE102005030851A1 (de) * | 2005-07-01 | 2007-01-04 | Freiberger Compound Materials Gmbh | Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer |
| EP1739213B1 (de) * | 2005-07-01 | 2011-04-13 | Freiberger Compound Materials GmbH | Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer |
| TWI327761B (en) * | 2005-10-07 | 2010-07-21 | Rohm & Haas Elect Mat | Method for making semiconductor wafer and wafer holding article |
| JP4907222B2 (ja) * | 2006-05-01 | 2012-03-28 | 三菱電機株式会社 | 半導体ウエハの加熱装置 |
| JP2008053521A (ja) * | 2006-08-25 | 2008-03-06 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコンウェーハの熱処理方法 |
| US8454356B2 (en) * | 2006-11-15 | 2013-06-04 | Mattson Technology, Inc. | Systems and methods for supporting a workpiece during heat-treating |
| US20080160731A1 (en) * | 2006-12-27 | 2008-07-03 | Dongbu Hitek Co., Ltd. | Method for fabricating cmos image sensor |
| US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
| US7943527B2 (en) * | 2008-05-30 | 2011-05-17 | The Board Of Trustees Of The University Of Illinois | Surface preparation for thin film growth by enhanced nucleation |
| US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
| JP6482180B2 (ja) | 2014-03-25 | 2019-03-13 | 住友重機械工業株式会社 | 半導体装置の製造方法 |
| EP3690962A1 (de) * | 2019-01-31 | 2020-08-05 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers |
| US11340400B2 (en) | 2019-03-06 | 2022-05-24 | Massachusetts Institute Of Technology | Hybrid integration for photonic integrated circuits |
| US11710656B2 (en) | 2019-09-30 | 2023-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor-on-insulator (SOI) substrate |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143520A (ja) * | 1982-02-22 | 1983-08-26 | Toshiba Corp | 半導体結晶の熱処理方法 |
| JPS59136925A (ja) * | 1983-01-25 | 1984-08-06 | Sumitomo Electric Ind Ltd | 化合物半導体の熱処理方法 |
| US4698486A (en) * | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
| JPS60239400A (ja) * | 1984-05-11 | 1985-11-28 | Sumitomo Electric Ind Ltd | 化合物半導体のアニ−ル法 |
| US4794217A (en) * | 1985-04-01 | 1988-12-27 | Qing Hua University | Induction system for rapid heat treatment of semiconductor wafers |
| US4731293A (en) * | 1986-06-20 | 1988-03-15 | American Telephone And Telegraph Company, At&T Bell Laboratories | Fabrication of devices using phosphorus glasses |
| US4725565A (en) * | 1986-06-26 | 1988-02-16 | Gte Laboratories Incorporated | Method of diffusing conductivity type imparting material into III-V compound semiconductor material |
| JPS648616A (en) * | 1987-06-30 | 1989-01-12 | Sharp Kk | Lamp annealing apparatus |
-
1989
- 1989-05-01 US US07/345,923 patent/US5011794A/en not_active Expired - Lifetime
-
1990
- 1990-04-25 DE DE69020802T patent/DE69020802T2/de not_active Expired - Fee Related
- 1990-04-25 ES ES90304436T patent/ES2074536T3/es not_active Expired - Lifetime
- 1990-04-25 CA CA002015411A patent/CA2015411C/en not_active Expired - Fee Related
- 1990-04-25 EP EP90304436A patent/EP0399662B1/de not_active Expired - Lifetime
- 1990-05-01 JP JP2111889A patent/JPH0750691B2/ja not_active Expired - Lifetime
- 1990-05-01 KR KR1019900006294A patent/KR950014610B1/ko not_active IP Right Cessation
-
1996
- 1996-06-06 HK HK100596A patent/HK100596A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CA2015411C (en) | 1994-03-15 |
| JPH0750691B2 (ja) | 1995-05-31 |
| KR950014610B1 (ko) | 1995-12-11 |
| CA2015411A1 (en) | 1990-11-01 |
| DE69020802T2 (de) | 1995-12-07 |
| HK100596A (en) | 1996-06-14 |
| JPH02303121A (ja) | 1990-12-17 |
| EP0399662A2 (de) | 1990-11-28 |
| EP0399662B1 (de) | 1995-07-12 |
| KR900019149A (ko) | 1990-12-24 |
| EP0399662A3 (de) | 1992-03-04 |
| ES2074536T3 (es) | 1995-09-16 |
| US5011794A (en) | 1991-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |