DE69024007D1 - Halbleiteranordnung aus amorphem Silizium. - Google Patents

Halbleiteranordnung aus amorphem Silizium.

Info

Publication number
DE69024007D1
DE69024007D1 DE69024007T DE69024007T DE69024007D1 DE 69024007 D1 DE69024007 D1 DE 69024007D1 DE 69024007 T DE69024007 T DE 69024007T DE 69024007 T DE69024007 T DE 69024007T DE 69024007 D1 DE69024007 D1 DE 69024007D1
Authority
DE
Germany
Prior art keywords
semiconductor device
amorphous silicon
silicon semiconductor
amorphous
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69024007T
Other languages
English (en)
Other versions
DE69024007T2 (de
Inventor
George Edward Possin
Linda Mason Garverick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27020453&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69024007(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE69024007D1 publication Critical patent/DE69024007D1/de
Application granted granted Critical
Publication of DE69024007T2 publication Critical patent/DE69024007T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
DE69024007T 1989-09-18 1990-09-17 Halbleiteranordnung aus amorphem Silizium. Expired - Lifetime DE69024007T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40897989A 1989-09-18 1989-09-18
US07/552,977 US5041888A (en) 1989-09-18 1990-07-16 Insulator structure for amorphous silicon thin-film transistors

Publications (2)

Publication Number Publication Date
DE69024007D1 true DE69024007D1 (de) 1996-01-18
DE69024007T2 DE69024007T2 (de) 1996-09-05

Family

ID=27020453

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69024007T Expired - Lifetime DE69024007T2 (de) 1989-09-18 1990-09-17 Halbleiteranordnung aus amorphem Silizium.

Country Status (6)

Country Link
US (1) US5041888A (de)
EP (1) EP0419160B1 (de)
JP (1) JP3122453B2 (de)
KR (1) KR100241828B1 (de)
DE (1) DE69024007T2 (de)
IL (1) IL95604A0 (de)

Families Citing this family (47)

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JPH07112053B2 (ja) * 1990-04-13 1995-11-29 富士ゼロックス株式会社 薄膜スイッチング素子アレイ
JP2976483B2 (ja) * 1990-04-24 1999-11-10 日本電気株式会社 液晶表示素子用薄膜トランジスタの製造方法
US5153142A (en) * 1990-09-04 1992-10-06 Industrial Technology Research Institute Method for fabricating an indium tin oxide electrode for a thin film transistor
US5289030A (en) 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JP2781706B2 (ja) * 1991-09-25 1998-07-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2689038B2 (ja) * 1991-12-04 1997-12-10 三菱電機株式会社 半導体装置およびその製造方法
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
TW223178B (en) * 1992-03-27 1994-05-01 Semiconductor Energy Res Co Ltd Semiconductor device and its production method
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP3537854B2 (ja) * 1992-12-29 2004-06-14 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタの製造方法
JP3164956B2 (ja) * 1993-01-28 2001-05-14 アプライド マテリアルズ インコーポレイテッド Ｃｖｄにより大面積のガラス基板上に高堆積速度でアモルファスシリコン薄膜を堆積する方法
DE69323716T2 (de) * 1993-01-28 1999-08-19 Applied Materials Inc Verfahren zur CVD-Beschichtung einer Mehrschichtstruktur in einer einzigen Kammer
TW319892B (de) * 1993-07-14 1997-11-11 Omi Tadahiro
US5434108A (en) * 1993-09-22 1995-07-18 United Microelectronics Corporation Grounding method to eliminate the antenna effect in VLSI process
KR0166894B1 (ko) * 1995-02-20 1999-03-30 구자홍 액정표시장치
US6004875A (en) 1995-11-15 1999-12-21 Micron Technology, Inc. Etch stop for use in etching of silicon oxide
US6323139B1 (en) * 1995-12-04 2001-11-27 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials
KR100195269B1 (ko) * 1995-12-22 1999-06-15 윤종용 액정표시장치의 제조방법
JP3565983B2 (ja) * 1996-04-12 2004-09-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5668375A (en) * 1996-08-26 1997-09-16 General Electric Company Fast scan reset for a large area x-ray detector
US5920070A (en) * 1996-11-27 1999-07-06 General Electric Company Solid state area x-ray detector with adjustable bias
DE69627393T2 (de) * 1996-11-27 2004-02-05 Hitachi, Ltd. Flüssigkristallanzeige mit aktivmatrix
US5751783A (en) * 1996-12-20 1998-05-12 General Electric Company Detector for automatic exposure control on an x-ray imaging system
KR100483522B1 (ko) * 1997-07-23 2005-07-25 삼성전자주식회사 이중게이트절연막을갖는박막트랜지스터액정표시장치및그제조방법
KR100498419B1 (ko) * 1997-12-30 2005-09-08 삼성전자주식회사 반도체소자에사용되는실리콘리치질화막형성방법
KR100580384B1 (ko) * 1997-12-31 2006-08-03 삼성전자주식회사 게이트절연막을가지고있는박막트랜지스터
US6420777B2 (en) * 1998-02-26 2002-07-16 International Business Machines Corporation Dual layer etch stop barrier
US6635530B2 (en) * 1998-04-07 2003-10-21 Micron Technology, Inc. Methods of forming gated semiconductor assemblies
US6316372B1 (en) 1998-04-07 2001-11-13 Micron Technology, Inc. Methods of forming a layer of silicon nitride in a semiconductor fabrication process
KR20010004020A (ko) * 1999-06-28 2001-01-15 김영환 박막 트랜지스터 어레이 기판의 제조방법
JP2001177101A (ja) * 1999-12-20 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR100729784B1 (ko) * 2001-02-27 2007-06-20 삼성전자주식회사 박막 트랜지스터 기판의 제조 방법
KR20030055060A (ko) * 2001-12-26 2003-07-02 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP3637332B2 (ja) * 2002-05-29 2005-04-13 株式会社東芝 半導体装置及びその製造方法
US20040198046A1 (en) * 2003-04-01 2004-10-07 Lee Yu-Chou Method for decreasing contact resistance of source/drain electrodes
US7023016B2 (en) * 2003-07-02 2006-04-04 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
WO2005057744A1 (ja) * 2003-12-15 2005-06-23 The Furukawa Electric Co., Ltd. 半導体素子の製造方法
TWI282969B (en) * 2004-04-29 2007-06-21 Au Optronics Corp Thin film transistor array and fabricating method thereof
JP4103885B2 (ja) * 2004-11-16 2008-06-18 住友電気工業株式会社 ＩｎＰ系受光素子の亜鉛固相拡散方法とＩｎＰ系受光素子
JP5005953B2 (ja) * 2006-05-18 2012-08-22 株式会社ジャパンディスプレイセントラル 薄膜トランジスタ
US8110453B2 (en) * 2008-04-17 2012-02-07 Applied Materials, Inc. Low temperature thin film transistor process, device property, and device stability improvement
US20110068332A1 (en) * 2008-08-04 2011-03-24 The Trustees Of Princeton University Hybrid Dielectric Material for Thin Film Transistors
KR101880838B1 (ko) * 2008-08-04 2018-08-16 더 트러스티즈 오브 프린스턴 유니버시티 박막 트랜지스터용 하이브리드 유전 재료
RU2466476C1 (ru) * 2011-05-03 2012-11-10 Государственное образовательное учреждение высшего профессионального образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова Способ изготовления полупроводникового прибора
JP6004319B2 (ja) * 2012-04-06 2016-10-05 住友電工デバイス・イノベーション株式会社 半導体装置および半導体装置の製造方法

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JPS631072A (ja) * 1986-06-20 1988-01-06 Toshiba Corp 薄膜電界効果トランジスタ
JP2631476B2 (ja) * 1987-09-09 1997-07-16 富士通株式会社 薄膜トランジスタの製造方法
US4870470A (en) * 1987-10-16 1989-09-26 International Business Machines Corporation Non-volatile memory cell having Si rich silicon nitride charge trapping layer

Also Published As

Publication number Publication date
US5041888A (en) 1991-08-20
JP3122453B2 (ja) 2001-01-09
JPH03149525A (ja) 1991-06-26
EP0419160B1 (de) 1995-12-06
EP0419160A1 (de) 1991-03-27
KR100241828B1 (ko) 2000-02-01
KR910007161A (ko) 1991-04-30
IL95604A0 (en) 1991-06-30
DE69024007T2 (de) 1996-09-05

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Legal Events

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8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: ROEGER UND KOLLEGEN, 73728 ESSLINGEN