DE69024373D1 - Verfahren zum Strukturieren eines piezoresistiven Elements auf einem Isolierträger - Google Patents
Verfahren zum Strukturieren eines piezoresistiven Elements auf einem IsolierträgerInfo
- Publication number
- DE69024373D1 DE69024373D1 DE69024373T DE69024373T DE69024373D1 DE 69024373 D1 DE69024373 D1 DE 69024373D1 DE 69024373 T DE69024373 T DE 69024373T DE 69024373 T DE69024373 T DE 69024373T DE 69024373 D1 DE69024373 D1 DE 69024373D1
- Authority
- DE
- Germany
- Prior art keywords
- structuring
- insulating support
- piezoresistive element
- piezoresistive
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8901988A FR2643148B1 (fr) | 1989-02-15 | 1989-02-15 | Capteur de pression du type semiconducteur sur isolant |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69024373D1 true DE69024373D1 (de) | 1996-02-01 |
DE69024373T2 DE69024373T2 (de) | 1996-05-15 |
Family
ID=9378821
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69024373T Expired - Lifetime DE69024373T2 (de) | 1989-02-15 | 1990-02-14 | Verfahren zum Strukturieren eines piezoresistiven Elements auf einem Isolierträger |
DE69008225T Expired - Lifetime DE69008225T2 (de) | 1989-02-15 | 1990-02-14 | Druckwandler der Art Halbleiter auf Isolierschicht. |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69008225T Expired - Lifetime DE69008225T2 (de) | 1989-02-15 | 1990-02-14 | Druckwandler der Art Halbleiter auf Isolierschicht. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5081437A (de) |
EP (2) | EP0390619B1 (de) |
JP (1) | JPH0320634A (de) |
DE (2) | DE69024373T2 (de) |
FR (1) | FR2643148B1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0468098B1 (de) * | 1990-07-27 | 1995-08-02 | Data Instruments Inc. | Verfahren zur Herstellung eines Druckwandlers |
JPH05196458A (ja) * | 1991-01-04 | 1993-08-06 | Univ Leland Stanford Jr | 原子力顕微鏡用ピエゾ抵抗性片持ばり構造体 |
US6044711A (en) * | 1997-01-10 | 2000-04-04 | Psi-Tronix, Inc. | Force sensing apparatus |
JPH11135807A (ja) * | 1997-10-30 | 1999-05-21 | Hitachi Ltd | Soi型圧力センサ |
FR2791474B1 (fr) * | 1999-03-26 | 2001-06-08 | Centre Nat Rech Scient | Detecteur infrarouge semi-conducteur et son procede de fabrication |
WO2002056763A2 (en) * | 2001-01-22 | 2002-07-25 | Integrated Sensing Systems, Inc. | Mems capacitive sensor for physiologic parameter measurement |
JP2002340713A (ja) * | 2001-05-10 | 2002-11-27 | Denso Corp | 半導体圧力センサ |
JP4164676B2 (ja) * | 2003-12-25 | 2008-10-15 | 株式会社デンソー | 力学量センサ素子構造及びその製造方法 |
US20050279177A1 (en) * | 2004-06-16 | 2005-12-22 | Yu-Hsiang Hsu | Strain gauge apparatus having a point-distributed sensor |
CA2623793C (en) * | 2008-03-03 | 2010-11-23 | Schlumberger Canada Limited | Microfluidic apparatus and method for measuring thermo-physical properties of a reservoir fluid |
WO2011013111A2 (en) | 2009-07-31 | 2011-02-03 | Schlumberger Canada Limited | Pressure measurement of a reservoir fluid in a microfluidic device |
WO2013057689A1 (en) | 2011-10-21 | 2013-04-25 | Ecole Polytechnique Federale De Lausanne (Epfl) | SiC HIGH TEMPERATURE PRESSURE TRANSDUCER |
US20160178467A1 (en) * | 2014-07-29 | 2016-06-23 | Silicon Microstructures, Inc. | Pressure sensor having cap-defined membrane |
JP6430327B2 (ja) * | 2015-04-22 | 2018-11-28 | 株式会社豊田中央研究所 | 力検知装置 |
JP6333208B2 (ja) * | 2015-04-06 | 2018-05-30 | 株式会社豊田中央研究所 | 力検知装置 |
CN107407610A (zh) * | 2015-04-06 | 2017-11-28 | 株式会社电装 | 力检测装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3368179A (en) * | 1966-03-30 | 1968-02-06 | Gen Electric | Temperature compensated semiconductor strain gage |
US3626588A (en) * | 1970-02-24 | 1971-12-14 | Kenneth M Durham Jr | Silicon resistor |
US3886799A (en) * | 1973-09-24 | 1975-06-03 | Nat Semiconductor Corp | Semiconductor pressure transducer employing temperature compensation circuits and novel heater circuitry |
US4003127A (en) * | 1974-11-25 | 1977-01-18 | General Motors Corporation | Polycrystalline silicon pressure transducer |
AU503379B1 (en) * | 1978-08-28 | 1979-08-30 | Babcock & Wilcox Co., The | Pressure transducer |
DE3041756A1 (de) * | 1980-11-05 | 1982-06-09 | Siemens AG, 1000 Berlin und 8000 München | Drucksensor |
JPS59230131A (ja) * | 1983-06-13 | 1984-12-24 | Tokyo Electric Co Ltd | ロ−ドセル |
JPH0712086B2 (ja) * | 1984-01-27 | 1995-02-08 | 株式会社日立製作所 | ダイヤフラムセンサの製造方法 |
US4633283A (en) * | 1985-03-11 | 1986-12-30 | Rca Corporation | Circuit and structure for protecting integrated circuits from destructive transient voltages |
GB8517913D0 (en) * | 1985-07-16 | 1985-08-21 | Patscentre Benelux Nv Sa | Semiconductor strain gauges |
DE3543261A1 (de) * | 1985-12-06 | 1987-06-11 | Siemens Ag | Drucksensor |
GB2207804B (en) * | 1987-08-06 | 1990-08-15 | Stc Plc | Pressure sensor and manufacturing process therefor |
-
1989
- 1989-02-15 FR FR8901988A patent/FR2643148B1/fr not_active Expired - Lifetime
-
1990
- 1990-02-14 EP EP90400397A patent/EP0390619B1/de not_active Expired - Lifetime
- 1990-02-14 US US07/479,889 patent/US5081437A/en not_active Expired - Lifetime
- 1990-02-14 EP EP93115157A patent/EP0581328B1/de not_active Expired - Lifetime
- 1990-02-14 DE DE69024373T patent/DE69024373T2/de not_active Expired - Lifetime
- 1990-02-14 DE DE69008225T patent/DE69008225T2/de not_active Expired - Lifetime
- 1990-02-15 JP JP2035086A patent/JPH0320634A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0581328A1 (de) | 1994-02-02 |
EP0390619A3 (de) | 1991-01-30 |
DE69008225D1 (de) | 1994-05-26 |
FR2643148B1 (fr) | 1991-12-06 |
EP0390619A2 (de) | 1990-10-03 |
US5081437A (en) | 1992-01-14 |
JPH0320634A (ja) | 1991-01-29 |
EP0581328B1 (de) | 1995-12-20 |
FR2643148A1 (fr) | 1990-08-17 |
DE69008225T2 (de) | 1994-08-04 |
DE69024373T2 (de) | 1996-05-15 |
EP0390619B1 (de) | 1994-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Free format text: DERZEIT KEIN VERTRETER BESTELLT |
|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: DERZEIT KEIN VERTRETER BESTELLT |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: JOHNSON CONTROLS AUTOMOTIVE ELECTRONICS S.A.S., OS |