DE69027368T2 - Halbleiterlaser und Verfahren zur Herstellung desselben - Google Patents

Halbleiterlaser und Verfahren zur Herstellung desselben

Info

Publication number
DE69027368T2
DE69027368T2 DE69027368T DE69027368T DE69027368T2 DE 69027368 T2 DE69027368 T2 DE 69027368T2 DE 69027368 T DE69027368 T DE 69027368T DE 69027368 T DE69027368 T DE 69027368T DE 69027368 T2 DE69027368 T2 DE 69027368T2
Authority
DE
Germany
Prior art keywords
manufacturing
same
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69027368T
Other languages
English (en)
Other versions
DE69027368D1 (de
Inventor
Kunio Tada
Yoshiaki Nakano
Yi Luo
Takeshi Inoue
Haruo Hosomatsu
Hideto Iwaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optical Measurement Technology Development Co Ltd
Original Assignee
Optical Measurement Technology Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1168729A external-priority patent/JPH07109928B2/ja
Priority claimed from JP18500189A external-priority patent/JP2957198B2/ja
Priority claimed from JP18500389A external-priority patent/JPH0349285A/ja
Priority claimed from JP18500289A external-priority patent/JPH0349284A/ja
Application filed by Optical Measurement Technology Development Co Ltd filed Critical Optical Measurement Technology Development Co Ltd
Publication of DE69027368D1 publication Critical patent/DE69027368D1/de
Application granted granted Critical
Publication of DE69027368T2 publication Critical patent/DE69027368T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
DE69027368T 1989-06-30 1990-06-29 Halbleiterlaser und Verfahren zur Herstellung desselben Expired - Fee Related DE69027368T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1168729A JPH07109928B2 (ja) 1989-06-30 1989-06-30 半導体レーザ装置およびその製造方法
JP18500189A JP2957198B2 (ja) 1989-07-18 1989-07-18 半導体レーザ装置
JP18500389A JPH0349285A (ja) 1989-07-18 1989-07-18 半導体レーザ装置およびその製造方法
JP18500289A JPH0349284A (ja) 1989-07-18 1989-07-18 半導体レーザ装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69027368D1 DE69027368D1 (de) 1996-07-18
DE69027368T2 true DE69027368T2 (de) 1997-01-30

Family

ID=27474216

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69027368T Expired - Fee Related DE69027368T2 (de) 1989-06-30 1990-06-29 Halbleiterlaser und Verfahren zur Herstellung desselben

Country Status (3)

Country Link
US (1) US5077752A (de)
EP (1) EP0406005B1 (de)
DE (1) DE69027368T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992007401A1 (en) * 1990-10-19 1992-04-30 Optical Measurement Technology Development Co., Ltd. Distributed feedback semiconductor laser
US5347533A (en) * 1991-09-17 1994-09-13 Fujitsu Limited Optical semiconductor device, method of producing the optical semiconductor device, and laser device using optical semiconductor devices
JP2705409B2 (ja) * 1991-11-21 1998-01-28 三菱電機株式会社 半導体分布帰還形レーザ装置
US5208824A (en) * 1991-12-12 1993-05-04 At&T Bell Laboratories Article comprising a DFB semiconductor laser
IT1264646B1 (it) * 1993-07-02 1996-10-04 Alcatel Italia Laser a semiconduttore a modulazione di guadagno
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法
US5504772A (en) * 1994-09-09 1996-04-02 Deacon Research Laser with electrically-controlled grating reflector
US5559822A (en) * 1995-06-07 1996-09-24 The Regents Of The University Of Colorado Silicon quantum dot laser
US5703896A (en) * 1995-06-07 1997-12-30 The Regents Of The University Of Colorado Silicon quantum dot laser
US6104739A (en) * 1997-12-24 2000-08-15 Nortel Networks Corporation Series of strongly complex coupled DFB lasers
JP3977920B2 (ja) * 1998-05-13 2007-09-19 富士通株式会社 半導体装置の製造方法
US6285698B1 (en) 1998-09-25 2001-09-04 Xerox Corporation MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
US6440764B1 (en) 2000-11-22 2002-08-27 Agere Systems Guardian Corp. Enhancement of carrier concentration in As-containing contact layers
US6925102B2 (en) * 2001-09-28 2005-08-02 The Furukawa Electric Co., Ltd. Semiconductor laser device, semiconductor laser module, and Raman amplifier using the device or module
US7463661B2 (en) 2002-02-27 2008-12-09 National Institute Of Advanced Industrial Science And Technology Quantum nano-structure semiconductor laser
JP4373063B2 (ja) 2002-09-02 2009-11-25 株式会社半導体エネルギー研究所 電子回路装置
JPWO2005002010A1 (ja) * 2003-06-27 2006-08-10 株式会社半導体エネルギー研究所 有機レーザー装置
US8283679B2 (en) * 2003-06-30 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having light-emitting element and light-receiving element for transmitting among circuits formed over the plurality of substrates
JP4537082B2 (ja) * 2004-01-28 2010-09-01 三菱電機株式会社 半導体レーザの検査方法および検査装置
KR101305761B1 (ko) * 2006-06-13 2013-09-06 엘지이노텍 주식회사 반도체 발광소자
US8044381B2 (en) * 2007-07-30 2011-10-25 Hewlett-Packard Development Company, L.P. Light emitting diode (LED)
US20090034977A1 (en) * 2007-07-30 2009-02-05 Michael Renne Ty Tan MULTIPLEXING HIGH SPEED LIGHT EMITTING DIODES (LEDs)
TWI398020B (zh) * 2008-12-01 2013-06-01 Ind Tech Res Inst 發光裝置
TW201334335A (zh) * 2012-01-13 2013-08-16 Corning Inc 具有由串接級組成的活性核心之ｍｉｄ－ｉｒ多波長串聯的分散式－回授雷射
US11133649B2 (en) * 2019-06-21 2021-09-28 Palo Alto Research Center Incorporated Index and gain coupled distributed feedback laser

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264887A (en) * 1975-11-25 1977-05-28 Hitachi Ltd Distribution feedback type laser
JPS60217690A (ja) * 1984-04-13 1985-10-31 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置およびその製造方法
JPH0656906B2 (ja) * 1984-09-28 1994-07-27 株式会社日立製作所 半導体レ−ザ装置
US4803691A (en) * 1985-05-07 1989-02-07 Spectra Diode Laboratories, Inc. Lateral superradiance suppressing diode laser bar
JPS62244187A (ja) * 1986-04-17 1987-10-24 Fujitsu Ltd 横方向注入型ｄｆｂレ−ザ
JPS63151094A (ja) * 1986-12-16 1988-06-23 Mitsubishi Electric Corp 半導体レ−ザ装置
JP2622143B2 (ja) * 1988-03-28 1997-06-18 キヤノン株式会社 分布帰還型半導体レーザ及び分布帰還型半導体レーザの作成方法

Also Published As

Publication number Publication date
EP0406005A2 (de) 1991-01-02
EP0406005B1 (de) 1996-06-12
DE69027368D1 (de) 1996-07-18
US5077752A (en) 1991-12-31
EP0406005A3 (en) 1991-09-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee