DE69027831D1 - Integrierte MOS-Schaltung - Google Patents

Integrierte MOS-Schaltung

Info

Publication number
DE69027831D1
DE69027831D1 DE69027831T DE69027831T DE69027831D1 DE 69027831 D1 DE69027831 D1 DE 69027831D1 DE 69027831 T DE69027831 T DE 69027831T DE 69027831 T DE69027831 T DE 69027831T DE 69027831 D1 DE69027831 D1 DE 69027831D1
Authority
DE
Germany
Prior art keywords
mos circuit
integrated mos
integrated
circuit
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69027831T
Other languages
English (en)
Other versions
DE69027831T2 (de
Inventor
Koji Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69027831D1 publication Critical patent/DE69027831D1/de
Publication of DE69027831T2 publication Critical patent/DE69027831T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
DE69027831T 1989-10-19 1990-10-19 Integrierte MOS-Schaltung Expired - Fee Related DE69027831T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1272074A JPH0824146B2 (ja) 1989-10-19 1989-10-19 Ｍｏｓ型集積回路

Publications (2)

Publication Number Publication Date
DE69027831D1 true DE69027831D1 (de) 1996-08-22
DE69027831T2 DE69027831T2 (de) 1997-01-02

Family

ID=17508733

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69027831T Expired - Fee Related DE69027831T2 (de) 1989-10-19 1990-10-19 Integrierte MOS-Schaltung

Country Status (5)

Country Link
US (1) US5087954A (de)
EP (1) EP0423826B1 (de)
JP (1) JPH0824146B2 (de)
KR (1) KR930005509B1 (de)
DE (1) DE69027831T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3057757B2 (ja) * 1990-11-29 2000-07-04 日産自動車株式会社 トランジスタ
US5286995A (en) * 1992-07-14 1994-02-15 Texas Instruments Incorporated Isolated resurf LDMOS devices for multiple outputs on one die
JP3540012B2 (ja) * 1994-06-07 2004-07-07 株式会社半導体エネルギー研究所 半導体装置作製方法
JP4376979B2 (ja) 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6265752B1 (en) * 1999-05-25 2001-07-24 Taiwan Semiconductor Manufacturing, Co., Inc. Method of forming a HVNMOS with an N+ buried layer combined with N well and a structure of the same
JP3831602B2 (ja) * 2000-12-07 2006-10-11 三洋電機株式会社 半導体装置の製造方法
DE102006012447B4 (de) * 2006-03-17 2011-07-28 Austriamicrosystems Ag Verfahren zur Herstellung einer Transistorstruktur
JP5586546B2 (ja) * 2011-03-23 2014-09-10 株式会社東芝 半導体装置
US10411086B2 (en) 2014-04-07 2019-09-10 Semiconductor Components Industries, Llc High voltage capacitor and method
US11616053B2 (en) * 2018-09-05 2023-03-28 Tokyo Electron Limited Method to vertically route a logic cell incorporating stacked transistors in a three dimensional logic device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4403395A (en) * 1979-02-15 1983-09-13 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication
JPS62104070A (ja) * 1985-10-30 1987-05-14 Nec Corp 半導体装置
JPS63198367A (ja) * 1987-02-13 1988-08-17 Toshiba Corp 半導体装置
JP2721155B2 (ja) * 1987-02-19 1998-03-04 株式会社東芝 半導体装置
JPH0783092B2 (ja) * 1987-06-24 1995-09-06 日本電気株式会社 半導体装置
US4890146A (en) * 1987-12-16 1989-12-26 Siliconix Incorporated High voltage level shift semiconductor device

Also Published As

Publication number Publication date
EP0423826B1 (de) 1996-07-17
DE69027831T2 (de) 1997-01-02
JPH03133171A (ja) 1991-06-06
JPH0824146B2 (ja) 1996-03-06
KR930005509B1 (ko) 1993-06-22
KR910008843A (ko) 1991-05-31
EP0423826A2 (de) 1991-04-24
US5087954A (en) 1992-02-11
EP0423826A3 (en) 1991-08-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee