DE69028581D1 - Dünnschicht-Halbleiter-Matrixbauelement - Google Patents

Dünnschicht-Halbleiter-Matrixbauelement

Info

Publication number
DE69028581D1
DE69028581D1 DE69028581T DE69028581T DE69028581D1 DE 69028581 D1 DE69028581 D1 DE 69028581D1 DE 69028581 T DE69028581 T DE 69028581T DE 69028581 T DE69028581 T DE 69028581T DE 69028581 D1 DE69028581 D1 DE 69028581D1
Authority
DE
Germany
Prior art keywords
thin film
film semiconductor
matrix device
semiconductor matrix
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028581T
Other languages
English (en)
Other versions
DE69028581T2 (de
Inventor
Makoto Miyago
Hiroshi Oka
Akihiko Imaya Akihiko Imaya
Hiroaki Kato
Takayoshi Nagayasu
Toshihiko Hirobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69028581D1 publication Critical patent/DE69028581D1/de
Publication of DE69028581T2 publication Critical patent/DE69028581T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
DE69028581T 1989-07-04 1990-07-04 Dünnschicht-Halbleiter-Matrixbauelement Expired - Fee Related DE69028581T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1173783A JPH0828517B2 (ja) 1989-07-04 1989-07-04 薄膜トランジスタアレイ

Publications (2)

Publication Number Publication Date
DE69028581D1 true DE69028581D1 (de) 1996-10-24
DE69028581T2 DE69028581T2 (de) 1997-03-13

Family

ID=15967072

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69028581T Expired - Fee Related DE69028581T2 (de) 1989-07-04 1990-07-04 Dünnschicht-Halbleiter-Matrixbauelement

Country Status (4)

Country Link
US (1) US5036370A (de)
EP (1) EP0407168B1 (de)
JP (1) JPH0828517B2 (de)
DE (1) DE69028581T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225364A (en) * 1989-06-26 1993-07-06 Oki Electric Industry Co., Ltd. Method of fabricating a thin-film transistor matrix for an active matrix display panel
JPH0465168A (ja) * 1990-07-05 1992-03-02 Hitachi Ltd 薄膜トランジスタ
US5153142A (en) * 1990-09-04 1992-10-06 Industrial Technology Research Institute Method for fabricating an indium tin oxide electrode for a thin film transistor
US5156986A (en) * 1990-10-05 1992-10-20 General Electric Company Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration
US5132745A (en) * 1990-10-05 1992-07-21 General Electric Company Thin film transistor having an improved gate structure and gate coverage by the gate dielectric
US5602403A (en) * 1991-03-01 1997-02-11 The United States Of America As Represented By The Secretary Of The Navy Ion Implantation buried gate insulator field effect transistor
US5352907A (en) * 1991-03-29 1994-10-04 Casio Computer Co., Ltd. Thin-film transistor
JPH055898A (ja) * 1991-06-27 1993-01-14 Casio Comput Co Ltd 薄膜素子形成パネル
EP0545327A1 (de) * 1991-12-02 1993-06-09 Matsushita Electric Industrial Co., Ltd. Dünnschichttransistoranordnung für den Gebrauch in einer Flüssigkristallanzeige
KR950010661B1 (ko) * 1992-11-07 1995-09-21 엘지전자주식회사 티에프티 엘씨디(tft-lcd)용 신호선 제조방법 및 구조
JP3002064B2 (ja) * 1992-11-12 2000-01-24 松下電器産業株式会社 薄膜トランジスタ
TW319892B (de) * 1993-07-14 1997-11-11 Omi Tadahiro
US5600153A (en) * 1994-10-07 1997-02-04 Micron Technology, Inc. Conductive polysilicon lines and thin film transistors
US6744091B1 (en) * 1995-01-31 2004-06-01 Fujitsu Limited Semiconductor storage device with self-aligned opening and method for fabricating the same
US5804838A (en) * 1995-05-26 1998-09-08 Micron Technology, Inc. Thin film transistors
US5612235A (en) * 1995-11-01 1997-03-18 Industrial Technology Research Institute Method of making thin film transistor with light-absorbing layer
JP2865039B2 (ja) * 1995-12-26 1999-03-08 日本電気株式会社 薄膜トランジスタ基板の製造方法
KR100190041B1 (ko) * 1995-12-28 1999-06-01 윤종용 액정표시장치의 제조방법
JP3516424B2 (ja) * 1996-03-10 2004-04-05 株式会社半導体エネルギー研究所 薄膜半導体装置
JPH1022508A (ja) * 1996-07-04 1998-01-23 Sharp Corp 薄膜トランジスタの製造方法
US6284576B1 (en) 1996-07-04 2001-09-04 Sharp Kabushiki Kaisha Manufacturing method of a thin-film transistor of a reverse staggered type
JP3941133B2 (ja) * 1996-07-18 2007-07-04 富士通株式会社 半導体装置およびその製造方法
KR100229613B1 (ko) * 1996-12-30 1999-11-15 구자홍 액정 표시 장치 및 제조 방법
KR100248123B1 (ko) 1997-03-04 2000-03-15 구본준 박막트랜지스터및그의제조방법
US6333518B1 (en) 1997-08-26 2001-12-25 Lg Electronics Inc. Thin-film transistor and method of making same
US6204521B1 (en) 1998-08-28 2001-03-20 Micron Technology, Inc. Thin film transistors
US6501098B2 (en) * 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
JP3654490B2 (ja) 1998-12-25 2005-06-02 富士通ディスプレイテクノロジーズ株式会社 薄膜トランジスタマトリクスとその製造方法
JP2000275663A (ja) * 1999-03-26 2000-10-06 Hitachi Ltd 液晶表示装置とその製造方法
JP4190118B2 (ja) * 1999-12-17 2008-12-03 三菱電機株式会社 半導体装置、液晶表示装置および半導体装置の製造方法
JP2001194676A (ja) * 2000-01-07 2001-07-19 Hitachi Ltd 液晶表示装置
JP3415602B2 (ja) * 2000-06-26 2003-06-09 鹿児島日本電気株式会社 パターン形成方法
US7316784B2 (en) * 2003-02-10 2008-01-08 Lg.Philips Lcd Co., Ltd. Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof
US20050048706A1 (en) * 2003-08-27 2005-03-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR100980020B1 (ko) * 2003-08-28 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
JP5036173B2 (ja) * 2004-11-26 2012-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8003449B2 (en) 2004-11-26 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a reverse staggered thin film transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61172370A (ja) * 1984-09-21 1986-08-04 Fujitsu Ltd シリコン薄膜トランジスタマトリツクス及びその製造方法
JPS6280626A (ja) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd 液晶表示素子
JPS63218926A (ja) * 1987-03-06 1988-09-12 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ及びその製造方法
JPH061314B2 (ja) * 1987-07-30 1994-01-05 シャープ株式会社 薄膜トランジスタアレイ
JPH01291467A (ja) * 1988-05-19 1989-11-24 Toshiba Corp 薄膜トランジスタ

Also Published As

Publication number Publication date
DE69028581T2 (de) 1997-03-13
JPH0338065A (ja) 1991-02-19
EP0407168B1 (de) 1996-09-18
JPH0828517B2 (ja) 1996-03-21
EP0407168A3 (en) 1992-07-01
US5036370A (en) 1991-07-30
EP0407168A2 (de) 1991-01-09

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee