DE69030215T2 - Lithographisches Laserabtastverfahren für die Herstellung elektronischer und ähnlicher Komponenten - Google Patents

Lithographisches Laserabtastverfahren für die Herstellung elektronischer und ähnlicher Komponenten

Info

Publication number
DE69030215T2
DE69030215T2 DE69030215T DE69030215T DE69030215T2 DE 69030215 T2 DE69030215 T2 DE 69030215T2 DE 69030215 T DE69030215 T DE 69030215T DE 69030215 T DE69030215 T DE 69030215T DE 69030215 T2 DE69030215 T2 DE 69030215T2
Authority
DE
Germany
Prior art keywords
laser
workpiece
radiation
electronic
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030215T
Other languages
English (en)
Other versions
DE69030215D1 (de
Inventor
Shyam Chandra Das
Jamaluddin Khan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quantum Corp
Original Assignee
Quantum Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Corp filed Critical Quantum Corp
Application granted granted Critical
Publication of DE69030215D1 publication Critical patent/DE69030215D1/de
Publication of DE69030215T2 publication Critical patent/DE69030215T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
DE69030215T 1989-06-22 1990-05-17 Lithographisches Laserabtastverfahren für die Herstellung elektronischer und ähnlicher Komponenten Expired - Fee Related DE69030215T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/369,714 US5221422A (en) 1988-06-06 1989-06-22 Lithographic technique using laser scanning for fabrication of electronic components and the like

Publications (2)

Publication Number Publication Date
DE69030215D1 DE69030215D1 (de) 1997-04-24
DE69030215T2 true DE69030215T2 (de) 1997-08-14

Family

ID=23456607

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69030215T Expired - Fee Related DE69030215T2 (de) 1989-06-22 1990-05-17 Lithographisches Laserabtastverfahren für die Herstellung elektronischer und ähnlicher Komponenten

Country Status (7)

Country Link
US (1) US5221422A (de)
EP (1) EP0404340B1 (de)
JP (1) JP2714475B2 (de)
KR (1) KR940007801B1 (de)
AT (1) ATE150555T1 (de)
CA (1) CA2018262C (de)
DE (1) DE69030215T2 (de)

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US5646814A (en) 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
US5592358A (en) 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
DE69711929T2 (de) * 1997-01-29 2002-09-05 Micronic Laser Systems Ab Taeb Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
FR2781916B1 (fr) * 1998-07-28 2000-09-08 Commissariat Energie Atomique Procede de realisation collective de tetes magnetiques integrees a surface portante obtenue par photolithographie
US6080959A (en) * 1999-03-12 2000-06-27 Lexmark International, Inc. System and method for feature compensation of an ablated inkjet nozzle plate
JP4514317B2 (ja) * 2000-11-27 2010-07-28 株式会社ミツトヨ 露光装置
US6514866B2 (en) * 2001-01-12 2003-02-04 North Carolina State University Chemically enhanced focused ion beam micro-machining of copper
JP4794550B2 (ja) * 2004-04-23 2011-10-19 シエル・インターナシヨナル・リサーチ・マートスハツペイ・ベー・ヴエー 地下累層を加熱するために使用される温度制限加熱器
US7655152B2 (en) * 2004-04-26 2010-02-02 Hewlett-Packard Development Company, L.P. Etching
US7534365B2 (en) * 2004-07-29 2009-05-19 Purdue Research Foundation Ultra-violet assisted anisotropic etching of PET
JP4777700B2 (ja) * 2005-06-17 2011-09-21 株式会社ディスコ レーザ加工方法
US20080003819A1 (en) * 2006-06-09 2008-01-03 Octavian Scientific, Inc. Laser isolation of metal over alumina underlayer and structures formed thereby
US8303833B2 (en) * 2007-06-21 2012-11-06 Fei Company High resolution plasma etch
US8536062B2 (en) * 2007-09-21 2013-09-17 Advanced Inquiry Systems, Inc. Chemical removal of oxide layer from chip pads
WO2009089499A2 (en) * 2008-01-09 2009-07-16 Fei Company Multibeam system
US8168961B2 (en) * 2008-11-26 2012-05-01 Fei Company Charged particle beam masking for laser ablation micromachining
US8284012B2 (en) * 2009-06-04 2012-10-09 The Aerospace Corporation Ultra-stable refractory high-power thin film resistors for space applications
CN102812533B (zh) 2010-04-07 2015-12-02 Fei公司 组合激光器和带电粒子束系统
KR20200055871A (ko) * 2018-11-13 2020-05-22 삼성디스플레이 주식회사 기판 식각 방법

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JPS5157283A (en) * 1974-11-15 1976-05-19 Nippon Electric Co Handotaikibanno bunkatsuhoho
FR2297143A1 (fr) * 1975-01-09 1976-08-06 Anvar Procede de realisation de microgravures par faisceau laser
US4300177A (en) * 1975-07-17 1981-11-10 U.S. Philips Corporation Thin-film magnetic head for reading and writing information
US4139409A (en) * 1976-11-29 1979-02-13 Macken John A Laser engraved metal relief process
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JPS5582780A (en) * 1978-12-16 1980-06-21 Toshiba Corp Surface processing method for metal or the like article
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CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
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US4389275A (en) * 1982-03-25 1983-06-21 The United States Of America As Represented By The Secretary Of The Army Quartz resonator angle correction
JPS59104287A (ja) * 1982-12-07 1984-06-16 Sumitomo Electric Ind Ltd レ−ザ加工法
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JPS61276108A (ja) * 1985-05-30 1986-12-06 Sony Corp 薄膜磁気ヘツドの製法
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JPS62254427A (ja) * 1986-04-28 1987-11-06 Toshiba Mach Co Ltd レ−ザ描画装置
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DE3751551T2 (de) * 1986-08-08 1996-05-30 Quantum Corp Lithographisches Verfahren unter Anwendung von Laser zur Herstellung von elektronischen Elementen und ähnlichen.
US4877480A (en) * 1986-08-08 1989-10-31 Digital Equipment Corporation Lithographic technique using laser for fabrication of electronic components and the like
JPS6351641A (ja) * 1986-08-21 1988-03-04 Oki Electric Ind Co Ltd 単結晶または多結晶Ｓｉ膜の微細パタ−ン形成方法
JPS63175822A (ja) * 1987-01-14 1988-07-20 Fuji Photo Film Co Ltd 光ビ−ム走査記録装置

Also Published As

Publication number Publication date
EP0404340B1 (de) 1997-03-19
JP2714475B2 (ja) 1998-02-16
EP0404340A3 (de) 1992-02-12
ATE150555T1 (de) 1997-04-15
KR940007801B1 (ko) 1994-08-25
EP0404340A2 (de) 1990-12-27
KR910001908A (ko) 1991-01-31
JPH03135568A (ja) 1991-06-10
US5221422A (en) 1993-06-22
CA2018262C (en) 1994-05-17
DE69030215D1 (de) 1997-04-24
CA2018262A1 (en) 1990-12-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee