DE69030329D1 - Ionimplantationsgerät - Google Patents

Ionimplantationsgerät

Info

Publication number
DE69030329D1
DE69030329D1 DE69030329T DE69030329T DE69030329D1 DE 69030329 D1 DE69030329 D1 DE 69030329D1 DE 69030329 T DE69030329 T DE 69030329T DE 69030329 T DE69030329 T DE 69030329T DE 69030329 D1 DE69030329 D1 DE 69030329D1
Authority
DE
Germany
Prior art keywords
ion implantation
implantation device
ion
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030329T
Other languages
English (en)
Other versions
DE69030329T2 (de
Inventor
Kazuhiro Shono
Shigeo Sasaki
Susumu Katoh
Masao Naitou
Tetsuya Nakanishi
Naomitsu Fujishita
Kazuhiko Noguchi
Masayasu Tanjo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Nissin Electric Co Ltd
Original Assignee
Mitsubishi Electric Corp
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2114307A external-priority patent/JP2665819B2/ja
Application filed by Mitsubishi Electric Corp, Nissin Electric Co Ltd filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69030329D1 publication Critical patent/DE69030329D1/de
Publication of DE69030329T2 publication Critical patent/DE69030329T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
DE69030329T 1989-08-17 1990-08-17 Ionimplantationsgerät Expired - Fee Related DE69030329T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP21183289 1989-08-17
JP519190 1990-01-12
JP2114307A JP2665819B2 (ja) 1989-08-17 1990-04-27 イオン注入装置

Publications (2)

Publication Number Publication Date
DE69030329D1 true DE69030329D1 (de) 1997-04-30
DE69030329T2 DE69030329T2 (de) 1997-09-25

Family

ID=27276639

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69027720T Expired - Fee Related DE69027720T2 (de) 1989-08-17 1990-08-17 Vorrichtung zur Ionenimplantation
DE69030329T Expired - Fee Related DE69030329T2 (de) 1989-08-17 1990-08-17 Ionimplantationsgerät

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69027720T Expired - Fee Related DE69027720T2 (de) 1989-08-17 1990-08-17 Vorrichtung zur Ionenimplantation

Country Status (3)

Country Link
US (1) US5132545A (de)
EP (1) EP0413366B1 (de)
DE (2) DE69027720T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313067A (en) * 1992-05-27 1994-05-17 Iowa State University Research Foundation, Inc. Ion processing apparatus including plasma ion source and mass spectrometer for ion deposition, ion implantation, or isotope separation
US5475618A (en) * 1993-01-28 1995-12-12 Advanced Micro Devices Apparatus and method for monitoring and controlling an ion implant device
US5354413A (en) * 1993-03-18 1994-10-11 Advanced Micro Devices, Inc. Electrode position controller for a semiconductor etching device
US5504341A (en) * 1995-02-17 1996-04-02 Zimec Consulting, Inc. Producing RF electric fields suitable for accelerating atomic and molecular ions in an ion implantation system
US5981954A (en) * 1997-01-16 1999-11-09 Canon Kabushiki Kaisha Electron beam exposure apparatus
KR100249307B1 (ko) * 1997-05-13 2000-03-15 윤종용 이온주입설비의 분석기
KR100532364B1 (ko) * 1998-09-08 2006-02-01 삼성전자주식회사 반도체 이온주입기의 가속에너지 실시간 감시장치
JP3414337B2 (ja) * 1999-11-12 2003-06-09 日新電機株式会社 電磁界レンズの制御方法およびイオン注入装置
FR2832546B1 (fr) * 2001-11-20 2008-04-04 Centre Nat Rech Scient Dispositif de reglage d'un appareil de generation d'un faisceau de particules chargees
US6677598B1 (en) * 2003-04-29 2004-01-13 Axcelis Technologies, Inc. Beam uniformity and angular distribution measurement system
US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
JP4643588B2 (ja) * 2003-12-12 2011-03-02 セメクイップ， インコーポレイテッド 固体から昇華した蒸気の流れの制御
US20080073559A1 (en) * 2003-12-12 2008-03-27 Horsky Thomas N Controlling the flow of vapors sublimated from solids
US7078707B1 (en) * 2005-01-04 2006-07-18 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
TWI405237B (zh) * 2005-02-24 2013-08-11 Ulvac Inc 離子植入裝置之控制方法，控制系統，控制程式，及離子植入裝置
US7105843B1 (en) * 2005-05-27 2006-09-12 Applied Materials, Israel, Ltd. Method and system for controlling focused ion beam alignment with a sample
US20080073553A1 (en) * 2006-02-13 2008-03-27 Ibis Technology Corporation Ion beam profiler
US7507977B2 (en) * 2006-03-14 2009-03-24 Axcelis Technologies, Inc. System and method of ion beam control in response to a beam glitch
US7592212B2 (en) * 2007-04-06 2009-09-22 Micron Technology, Inc. Methods for determining a dose of an impurity implanted in a semiconductor substrate
US7875125B2 (en) * 2007-09-21 2011-01-25 Semequip, Inc. Method for extending equipment uptime in ion implantation
TWI516175B (zh) * 2008-02-08 2016-01-01 蘭姆研究公司 在電漿處理腔室中穩定壓力的方法及其程式儲存媒體
JP2012156243A (ja) * 2011-01-25 2012-08-16 Toshiba Corp 半導体装置の製造方法および製造装置
US9514916B2 (en) * 2013-03-15 2016-12-06 Varian Semiconductor Equipment Associates, Inc. Wafer platen thermosyphon cooling system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
US4667111C1 (en) * 1985-05-17 2001-04-10 Eaton Corp Cleveland Accelerator for ion implantation
JPS62243231A (ja) * 1986-04-15 1987-10-23 Mitsubishi Electric Corp 半導体製造装置
JPS62272437A (ja) * 1986-05-21 1987-11-26 Mitsubishi Electric Corp イオン注入装置用質量分析装置
JPS63289751A (ja) * 1987-05-22 1988-11-28 Hitachi Ltd イオンビ−ム発生装置
JPS63310549A (ja) * 1987-06-12 1988-12-19 Fuji Electric Co Ltd イオン注入装置
JPH0198470A (ja) * 1987-10-09 1989-04-17 Setsuo Kuroki たばこ煙香料吸入用パイプ型フィルター
GB2233124B (en) * 1989-06-06 1994-02-09 Mitsubishi Electric Corp Ion implantation apparatus

Also Published As

Publication number Publication date
EP0413366A3 (en) 1991-07-10
US5132545A (en) 1992-07-21
EP0413366A2 (de) 1991-02-20
EP0413366B1 (de) 1996-07-10
DE69030329T2 (de) 1997-09-25
DE69027720T2 (de) 1997-02-20
DE69027720D1 (de) 1996-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee