DE69031699T2 - Verfahren zur Haltung eines Substrats - Google Patents

Verfahren zur Haltung eines Substrats

Info

Publication number
DE69031699T2
DE69031699T2 DE69031699T DE69031699T DE69031699T2 DE 69031699 T2 DE69031699 T2 DE 69031699T2 DE 69031699 T DE69031699 T DE 69031699T DE 69031699 T DE69031699 T DE 69031699T DE 69031699 T2 DE69031699 T2 DE 69031699T2
Authority
DE
Germany
Prior art keywords
holding
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031699T
Other languages
English (en)
Other versions
DE69031699D1 (de
Inventor
Mitsuaki Amemiya
Shinichi Hara
Eiji Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69031699D1 publication Critical patent/DE69031699D1/de
Publication of DE69031699T2 publication Critical patent/DE69031699T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
DE69031699T 1989-07-13 1990-07-11 Verfahren zur Haltung eines Substrats Expired - Fee Related DE69031699T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1179167A JP2731950B2 (ja) 1989-07-13 1989-07-13 露光方法

Publications (2)

Publication Number Publication Date
DE69031699D1 DE69031699D1 (de) 1997-12-18
DE69031699T2 true DE69031699T2 (de) 1998-04-02

Family

ID=16061110

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031699T Expired - Fee Related DE69031699T2 (de) 1989-07-13 1990-07-11 Verfahren zur Haltung eines Substrats

Country Status (4)

Country Link
US (1) US5093579A (de)
EP (1) EP0408350B1 (de)
JP (1) JP2731950B2 (de)
DE (1) DE69031699T2 (de)

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US5231291A (en) * 1989-08-01 1993-07-27 Canon Kabushiki Kaisha Wafer table and exposure apparatus with the same
DE69130434T2 (de) * 1990-06-29 1999-04-29 Canon Kk Platte zum Arbeiten unter Vakuum
US5220171A (en) * 1990-11-01 1993-06-15 Canon Kabushiki Kaisha Wafer holding device in an exposure apparatus
JP3168018B2 (ja) * 1991-03-22 2001-05-21 キヤノン株式会社 基板吸着保持方法
KR0155186B1 (ko) * 1992-05-26 1998-12-15 키무라 미치오 세라믹 기판과 그 제조방법 및 세라믹 흡착기판을 사용한 박판흡착장치
US5435379A (en) * 1992-08-14 1995-07-25 Texas Instruments Incorporated Method and apparatus for low-temperature semiconductor processing
US5593800A (en) * 1994-01-06 1997-01-14 Canon Kabushiki Kaisha Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus
DE69505448T2 (de) * 1994-03-15 1999-04-22 Canon Kk Maske und Maskenträger
US5605600A (en) * 1995-03-13 1997-02-25 International Business Machines Corporation Etch profile shaping through wafer temperature control
US6297871B1 (en) * 1995-09-12 2001-10-02 Nikon Corporation Exposure apparatus
US5672882A (en) * 1995-12-29 1997-09-30 Advanced Micro Devices, Inc. Ion implantation device with a closed-loop process chamber pressure control system
JP3243168B2 (ja) * 1996-02-06 2002-01-07 キヤノン株式会社 原版保持装置およびこれを用いた露光装置
US5854819A (en) * 1996-02-07 1998-12-29 Canon Kabushiki Kaisha Mask supporting device and correction method therefor, and exposure apparatus and device producing method utilizing the same
JP3814359B2 (ja) * 1996-03-12 2006-08-30 キヤノン株式会社 Ｘ線投影露光装置及びデバイス製造方法
JP3372782B2 (ja) * 1996-10-04 2003-02-04 キヤノン株式会社 走査ステージ装置および走査型露光装置
JPH10240356A (ja) 1997-02-21 1998-09-11 Anelva Corp 基板処理装置の基板温度制御法と基板温度制御性判定法
JP3854680B2 (ja) * 1997-02-26 2006-12-06 キヤノン株式会社 圧力隔壁およびこれを用いた露光装置
JP3178517B2 (ja) * 1998-03-05 2001-06-18 日本電気株式会社 パターン露光装置用試料台
US6153044A (en) * 1998-04-30 2000-11-28 Euv Llc Protection of lithographic components from particle contamination
JP2000349004A (ja) 1999-06-03 2000-12-15 Canon Inc 位置決め装置、雰囲気置換方法、露光装置およびデバイス製造方法
DE19930742C2 (de) * 1999-06-30 2001-07-19 Inst Polymerforschung Dresden Vorrichtung zur physiko-chemischen Modifizierung von Materialproben mittels eines Elektronenstrahls
JP4689064B2 (ja) 2000-03-30 2011-05-25 キヤノン株式会社 露光装置およびデバイス製造方法
JP3869999B2 (ja) 2000-03-30 2007-01-17 キヤノン株式会社 露光装置および半導体デバイス製造方法
ES2164020B1 (es) * 2000-05-31 2003-06-01 Consejo Superior Investigacion Dispositivo portamuestras para medidas simultaneas utilizando radiacion de sincrotron.
JP4560182B2 (ja) 2000-07-06 2010-10-13 キヤノン株式会社 減圧処理装置、半導体製造装置およびデバイス製造方法
JP2002198277A (ja) * 2000-12-22 2002-07-12 Canon Inc 補正装置、露光装置、デバイス製造方法及びデバイス
US6954255B2 (en) * 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
US6934003B2 (en) * 2002-01-07 2005-08-23 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
US7357115B2 (en) * 2003-03-31 2008-04-15 Lam Research Corporation Wafer clamping apparatus and method for operating the same
US7392815B2 (en) 2003-03-31 2008-07-01 Lam Research Corporation Chamber for wafer cleaning and method for making the same
US7153388B2 (en) 2003-03-31 2006-12-26 Lam Research Corporation Chamber for high-pressure wafer processing and method for making the same
JP4560040B2 (ja) 2003-03-31 2010-10-13 ラム リサーチ コーポレーション ウエハ処理のためのチャンバおよび方法
US8749762B2 (en) * 2004-05-11 2014-06-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006245157A (ja) * 2005-03-02 2006-09-14 Canon Inc 露光方法及び露光装置
US7802917B2 (en) * 2005-08-05 2010-09-28 Lam Research Corporation Method and apparatus for chuck thermal calibration
KR101486407B1 (ko) * 2006-07-28 2015-01-26 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템, 방열 방법 및 프레임
KR101312292B1 (ko) * 2006-12-11 2013-09-27 엘아이지에이디피 주식회사 플라즈마 처리장치의 기판 파손 방지장치 및 그 방법
US9151731B2 (en) * 2012-01-19 2015-10-06 Idexx Laboratories Inc. Fluid pressure control device for an analyzer
CN105023860B (zh) * 2014-04-16 2017-10-03 北京中电科电子装备有限公司 一种芯片精密操作装置
CN104046945B (zh) * 2014-06-16 2016-05-25 京东方科技集团股份有限公司 承载台、真空蒸镀设备及其使用方法
CA2956439C (en) 2015-10-08 2017-11-14 1304338 Alberta Ltd. Method of producing heavy oil using a fuel cell
CA2914070C (en) 2015-12-07 2023-08-01 1304338 Alberta Ltd. Upgrading oil using supercritical fluids
JP2017139452A (ja) * 2016-02-03 2017-08-10 キヤノン株式会社 インプリント装置および物品の製造方法
JP6875417B2 (ja) * 2016-04-08 2021-05-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 真空チャック圧力制御システム
CN107871703A (zh) * 2017-10-27 2018-04-03 德淮半导体有限公司 晶圆加工装置及其加工方法
CA2997634A1 (en) 2018-03-07 2019-09-07 1304342 Alberta Ltd. Production of petrochemical feedstocks and products using a fuel cell

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD127137B1 (de) * 1976-08-17 1979-11-28 Elektromat Veb Vorrichtung zum kompensieren der waermeeinwirkung an justier- und belichtungseinrichtungen
US4213698A (en) * 1978-12-01 1980-07-22 Bell Telephone Laboratories, Incorporated Apparatus and method for holding and planarizing thin workpieces
US4194233A (en) * 1978-01-30 1980-03-18 Rockwell International Corporation Mask apparatus for fine-line lithography
JPS5953659B2 (ja) * 1980-04-11 1984-12-26 株式会社日立製作所 真空室中回転体の往復動機構
JPS57169244A (en) * 1981-04-13 1982-10-18 Canon Inc Temperature controller for mask and wafer
US4498833A (en) * 1982-05-24 1985-02-12 Varian Associates, Inc. Wafer orientation system
JPS61160934A (ja) * 1985-01-10 1986-07-21 Canon Inc 投影光学装置
EP0250064A2 (de) * 1986-06-20 1987-12-23 Varian Associates, Inc. Platte mit mehrfachen dünnen Klemmitteln zum Behandeln von Plättchen
JPS6372877A (ja) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd 真空処理装置
JPS63119233A (ja) * 1986-11-07 1988-05-23 Hitachi Ltd Ｘ線転写装置
DE3861522D1 (de) * 1987-03-20 1991-02-21 Ushio Electric Inc Behandlungsverfahren fuer photolacke.
JPH01152639A (ja) * 1987-12-10 1989-06-15 Canon Inc 吸着保持装置
JPH01139237U (de) * 1988-03-15 1989-09-22
JP2748127B2 (ja) * 1988-09-02 1998-05-06 キヤノン株式会社 ウエハ保持方法

Also Published As

Publication number Publication date
EP0408350B1 (de) 1997-11-12
US5093579A (en) 1992-03-03
EP0408350A2 (de) 1991-01-16
EP0408350A3 (en) 1991-05-15
JP2731950B2 (ja) 1998-03-25
DE69031699D1 (de) 1997-12-18
JPH0344913A (ja) 1991-02-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee