DE69032824T2 - Verfahren zum Laseraufdampfen - Google Patents

Verfahren zum Laseraufdampfen

Info

Publication number
DE69032824T2
DE69032824T2 DE69032824T DE69032824T DE69032824T2 DE 69032824 T2 DE69032824 T2 DE 69032824T2 DE 69032824 T DE69032824 T DE 69032824T DE 69032824 T DE69032824 T DE 69032824T DE 69032824 T2 DE69032824 T2 DE 69032824T2
Authority
DE
Germany
Prior art keywords
vapor deposition
deposition process
laser vapor
laser
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032824T
Other languages
English (en)
Other versions
DE69032824D1 (de
Inventor
Kazuhiro Akihama
Yoshimi Kizaki
Noboru Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1176388A external-priority patent/JP2588971B2/ja
Priority claimed from JP2016796A external-priority patent/JP2564197B2/ja
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Application granted granted Critical
Publication of DE69032824D1 publication Critical patent/DE69032824D1/de
Publication of DE69032824T2 publication Critical patent/DE69032824T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
DE69032824T 1989-07-06 1990-07-05 Verfahren zum Laseraufdampfen Expired - Fee Related DE69032824T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1176388A JP2588971B2 (ja) 1989-07-06 1989-07-06 レーザ蒸着方法及び装置
JP21542089 1989-08-22
JP2016796A JP2564197B2 (ja) 1989-08-22 1990-01-25 アモルファス金属膜及びその製造方法

Publications (2)

Publication Number Publication Date
DE69032824D1 DE69032824D1 (de) 1999-01-21
DE69032824T2 true DE69032824T2 (de) 1999-06-10

Family

ID=27281566

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69032824T Expired - Fee Related DE69032824T2 (de) 1989-07-06 1990-07-05 Verfahren zum Laseraufdampfen
DE69028662T Expired - Fee Related DE69028662T2 (de) 1989-07-06 1990-07-05 Verfahren und Vorrichtung zum Laseraufdampfen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69028662T Expired - Fee Related DE69028662T2 (de) 1989-07-06 1990-07-05 Verfahren und Vorrichtung zum Laseraufdampfen

Country Status (3)

Country Link
US (1) US5126165A (de)
EP (2) EP0406871B1 (de)
DE (2) DE69032824T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4022817C1 (de) * 1990-07-18 1991-11-07 Deutsche Forschungsanstalt Fuer Luft- Und Raumfahrt Ev, 5300 Bonn, De
GB2300001B (en) * 1992-11-30 1997-05-28 Mitsubishi Electric Corp Thin film forming apparatus using laser
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
US5458686A (en) * 1995-03-03 1995-10-17 Neocera, Inc. Pulsed laser passive filter deposition system
AT402945B (de) * 1995-07-03 1997-09-25 Joanneum Research Forschungsge Verfahren und vorrichtung zur beschichtung der oberfläche eines substrats
US5617911A (en) * 1995-09-08 1997-04-08 Aeroquip Corporation Method and apparatus for creating a free-form three-dimensional article using a layer-by-layer deposition of a support material and a deposition material
US5718951A (en) * 1995-09-08 1998-02-17 Aeroquip Corporation Method and apparatus for creating a free-form three-dimensional article using a layer-by-layer deposition of a molten metal and deposition of a powdered metal as a support material
US5669433A (en) * 1995-09-08 1997-09-23 Aeroquip Corporation Method for creating a free-form metal three-dimensional article using a layer-by-layer deposition of a molten metal
US5787965A (en) * 1995-09-08 1998-08-04 Aeroquip Corporation Apparatus for creating a free-form metal three-dimensional article using a layer-by-layer deposition of a molten metal in an evacuation chamber with inert environment
US5746844A (en) * 1995-09-08 1998-05-05 Aeroquip Corporation Method and apparatus for creating a free-form three-dimensional article using a layer-by-layer deposition of molten metal and using a stress-reducing annealing process on the deposited metal
DE19620508A1 (de) * 1996-05-22 1997-11-27 Hoechst Ag Schwefelenthaltende heterocyclische Bradykinin-Antagonisten, Verfahren zu ihrer Herstellung und ihre Verwendung
US5906857A (en) * 1997-05-13 1999-05-25 Ultratherm, Inc. Apparatus, system and method for controlling emission parameters attending vaporized in a HV environment
JPH11111185A (ja) * 1997-10-03 1999-04-23 Agency Of Ind Science & Technol レーザアブレーション型イオン源
US5858478A (en) * 1997-12-02 1999-01-12 The Aerospace Corporation Magnetic field pulsed laser deposition of thin films
US6063194A (en) * 1998-06-10 2000-05-16 Delsys Pharmaceutical Corporation Dry powder deposition apparatus
US6137110A (en) * 1998-08-17 2000-10-24 The United States Of America As Represented By The United States Department Of Energy Focused ion beam source method and apparatus
US6395624B1 (en) 1999-02-22 2002-05-28 International Business Machines Corporation Method for forming implants in semiconductor fabrication
US6923979B2 (en) 1999-04-27 2005-08-02 Microdose Technologies, Inc. Method for depositing particles onto a substrate using an alternating electric field
KR100934679B1 (ko) * 2000-10-17 2009-12-31 네오포토닉스 코포레이션 반응성 증착에 의한 코팅 형성
US20020142612A1 (en) * 2001-03-30 2002-10-03 Han-Ming Wu Shielding plate in plasma for uniformity improvement
US6719847B2 (en) 2002-02-20 2004-04-13 Cinetic Automation Corporation Masking apparatus
US20050067389A1 (en) * 2003-09-25 2005-03-31 Greer James A. Target manipulation for pulsed laser deposition
US7301149B2 (en) * 2004-05-06 2007-11-27 The Board Of Trustees Of The University Of Illinois Apparatus and method for determining a thickness of a deposited material
US20090176034A1 (en) * 2006-02-23 2009-07-09 Picodeon Ltd. Oy Surface Treatment Technique and Surface Treatment Apparatus Associated With Ablation Technology
US20080254235A1 (en) * 2007-04-10 2008-10-16 Jeonggoo Kim Pulsed laser deposition of high quality photoluminescent GaN films
US20090008577A1 (en) * 2007-07-07 2009-01-08 Varian Semiconductor Equipment Associates, Inc. Conformal Doping Using High Neutral Density Plasma Implant
CN101696936B (zh) * 2009-10-22 2011-07-20 浙江师范大学 激光诱导放电增强等离子体光谱检测装置
WO2016036941A1 (en) * 2014-09-04 2016-03-10 Northwestern University Chemically pure zero-valent iron nanofilms from a low-purity iron source
CN104532194B (zh) * 2014-12-29 2017-05-10 深圳大学 激光沉积薄膜制备装置
CN104947007B (zh) * 2015-06-23 2017-05-03 太原科技大学 用于制备非晶合金的系统
EP3587620A1 (de) 2018-06-28 2020-01-01 Solmates B.V. Vorrichtung zur gepulsten laserabscheidung und ein substrat mit einer substratoberfläche zur reduzierung von partikeln auf dem substrat
JP7408696B2 (ja) * 2019-06-19 2024-01-05 ボストン サイエンティフィック サイムド，インコーポレイテッド 血管石灰の破砕のためのレーザパルスエネルギーの非水系光学ブレークダウンを介したプラズマ生成
CN112853278B (zh) * 2019-11-12 2023-01-17 中国科学院微电子研究所 一种短脉冲激光沉积薄膜的制备方法
EP3964605A1 (de) * 2020-09-03 2022-03-09 Solmates B.V. Verfahren zur gepulsten laserabscheidung
CN115772649A (zh) * 2023-02-10 2023-03-10 中国航空制造技术研究院 一种针对飞机蒙皮类结构的激光诱导沉积装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates
US4701592A (en) * 1980-11-17 1987-10-20 Rockwell International Corporation Laser assisted deposition and annealing
JPS59116373A (ja) * 1982-12-22 1984-07-05 Agency Of Ind Science & Technol レ−ザ蒸着装置
GB2155042B (en) * 1984-02-21 1987-12-31 Hughes Technology Pty Ltd Laser induced ion beam generator
JPS6254005A (ja) * 1985-09-02 1987-03-09 Hitachi Ltd 超微粒子の製造方法
JPS6311660A (ja) * 1986-07-02 1988-01-19 Mitsubishi Electric Corp レ−ザビ−ム集光レンズ保護装置
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
US5017277A (en) * 1988-07-07 1991-05-21 Matsushita Electric Industrial Co., Ltd. Laser sputtering apparatus
US4921348A (en) * 1989-01-26 1990-05-01 Iowa State University Research Foundation, Inc. Method and means for a spatial and temporal probe for laser-generated plumes based on density gradients
US5015492A (en) * 1989-04-03 1991-05-14 Rutgers University Method and apparatus for pulsed energy induced vapor deposition of thin films
US5019552A (en) * 1990-02-20 1991-05-28 The United States Of America As Represented By The United States Department Of Energy Long-laser-pulse method of producing thin films

Also Published As

Publication number Publication date
EP0534505A2 (de) 1993-03-31
DE69028662T2 (de) 1997-03-06
EP0534505A3 (en) 1993-04-14
EP0406871B1 (de) 1996-09-25
US5126165A (en) 1992-06-30
EP0406871A2 (de) 1991-01-09
EP0534505B1 (de) 1998-12-09
DE69028662D1 (de) 1996-10-31
EP0406871A3 (en) 1992-03-04
DE69032824D1 (de) 1999-01-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee