DE69032952T2 - Trocken-Behandlungsvorrichtung - Google Patents
Trocken-BehandlungsvorrichtungInfo
- Publication number
- DE69032952T2 DE69032952T2 DE69032952T DE69032952T DE69032952T2 DE 69032952 T2 DE69032952 T2 DE 69032952T2 DE 69032952 T DE69032952 T DE 69032952T DE 69032952 T DE69032952 T DE 69032952T DE 69032952 T2 DE69032952 T2 DE 69032952T2
- Authority
- DE
- Germany
- Prior art keywords
- treatment device
- dry treatment
- dry
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1298694A JP2790878B2 (ja) | 1988-11-16 | 1989-11-15 | ドライプロセス装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69032952D1 DE69032952D1 (de) | 1999-03-25 |
DE69032952T2 true DE69032952T2 (de) | 1999-09-30 |
Family
ID=17863074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69032952T Expired - Fee Related DE69032952T2 (de) | 1989-11-15 | 1990-11-14 | Trocken-Behandlungsvorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5795452A (de) |
EP (1) | EP0428161B1 (de) |
KR (1) | KR0180900B1 (de) |
DE (1) | DE69032952T2 (de) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW299559B (de) * | 1994-04-20 | 1997-03-01 | Tokyo Electron Co Ltd | |
US6095084A (en) * | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
US5976993A (en) * | 1996-03-28 | 1999-11-02 | Applied Materials, Inc. | Method for reducing the intrinsic stress of high density plasma films |
JP3238082B2 (ja) * | 1996-05-16 | 2001-12-10 | シャープ株式会社 | 電子デバイス製造装置 |
US6082294A (en) * | 1996-06-07 | 2000-07-04 | Saint-Gobain Industrial Ceramics, Inc. | Method and apparatus for depositing diamond film |
US5944940A (en) * | 1996-07-09 | 1999-08-31 | Gamma Precision Technology, Inc. | Wafer transfer system and method of using the same |
US6106683A (en) * | 1997-06-23 | 2000-08-22 | Toyo Technologies Inc. | Grazing angle plasma polisher (GAPP) |
US6835279B2 (en) * | 1997-07-30 | 2004-12-28 | Hitachi Kokusai Electric Inc. | Plasma generation apparatus |
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US7393561B2 (en) * | 1997-08-11 | 2008-07-01 | Applied Materials, Inc. | Method and apparatus for layer by layer deposition of thin films |
US6780464B2 (en) | 1997-08-11 | 2004-08-24 | Torrex Equipment | Thermal gradient enhanced CVD deposition at low pressure |
US6352594B2 (en) * | 1997-08-11 | 2002-03-05 | Torrex | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
US6321680B2 (en) * | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
US6390020B1 (en) | 1997-10-01 | 2002-05-21 | The Dow Chemical Company | Dual face shower head magnetron, plasma generating apparatus and method of coating substrate |
KR100557579B1 (ko) * | 1997-11-05 | 2006-05-03 | 에스케이 주식회사 | 박막제조장치 |
US6136388A (en) * | 1997-12-01 | 2000-10-24 | Applied Materials, Inc. | Substrate processing chamber with tunable impedance |
US6098568A (en) | 1997-12-01 | 2000-08-08 | Applied Materials, Inc. | Mixed frequency CVD apparatus |
US7004107B1 (en) * | 1997-12-01 | 2006-02-28 | Applied Materials Inc. | Method and apparatus for monitoring and adjusting chamber impedance |
US6267075B1 (en) * | 1998-07-09 | 2001-07-31 | Yield Engineering Systems, Inc. | Apparatus for cleaning items using gas plasma |
US7091605B2 (en) * | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
EP1198610A4 (de) * | 1999-05-14 | 2004-04-07 | Univ California | Plasmastromerzeugungsvorrichtung mit weitem druckbereich bei niedrigen temperaturen |
KR100732148B1 (ko) * | 1999-09-09 | 2007-06-25 | 이시카와지마-하리마 주고교 가부시키가이샤 | 내부 전극 방식의 플라즈마 처리 장치 및 플라즈마 처리방법 |
US6478924B1 (en) | 2000-03-07 | 2002-11-12 | Applied Materials, Inc. | Plasma chamber support having dual electrodes |
WO2001088221A1 (fr) * | 2000-05-17 | 2001-11-22 | Ishikawajima-Harima Heavy Industries Co., Ltd. | Appareil de depot chimique en phase vapeur (cvd) au plasma et procede associe |
US6528435B1 (en) | 2000-08-25 | 2003-03-04 | Wafermasters, Inc. | Plasma processing |
JP4770029B2 (ja) * | 2001-01-22 | 2011-09-07 | 株式会社Ihi | プラズマcvd装置及び太陽電池の製造方法 |
US20050059250A1 (en) * | 2001-06-21 | 2005-03-17 | Savas Stephen Edward | Fast etching system and process for organic materials |
US6896775B2 (en) * | 2002-10-29 | 2005-05-24 | Zond, Inc. | High-power pulsed magnetically enhanced plasma processing |
US6853142B2 (en) * | 2002-11-04 | 2005-02-08 | Zond, Inc. | Methods and apparatus for generating high-density plasma |
JP2004288984A (ja) * | 2003-03-24 | 2004-10-14 | Sharp Corp | 成膜装置及び成膜方法 |
US6806651B1 (en) * | 2003-04-22 | 2004-10-19 | Zond, Inc. | High-density plasma source |
WO2004107394A2 (ja) * | 2003-05-27 | 2004-12-09 | Matsushita Electric Works, Ltd. | プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法 |
JP4298401B2 (ja) * | 2003-06-27 | 2009-07-22 | キヤノン株式会社 | 堆積膜形成装置、及び堆積膜形成方法 |
WO2005045873A2 (en) * | 2003-10-28 | 2005-05-19 | Nordson Corporation | Plasma processing system and plasma treatment process |
US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US9123508B2 (en) * | 2004-02-22 | 2015-09-01 | Zond, Llc | Apparatus and method for sputtering hard coatings |
US7663319B2 (en) * | 2004-02-22 | 2010-02-16 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
US7750575B2 (en) * | 2004-04-07 | 2010-07-06 | Zond, Inc. | High density plasma source |
US7078317B2 (en) * | 2004-08-06 | 2006-07-18 | Silicon Genesis Corporation | Method and system for source switching and in-situ plasma bonding |
JP4185483B2 (ja) * | 2004-10-22 | 2008-11-26 | シャープ株式会社 | プラズマ処理装置 |
JP4584722B2 (ja) * | 2005-01-13 | 2010-11-24 | シャープ株式会社 | プラズマ処理装置および同装置により製造された半導体素子 |
JP2006196681A (ja) * | 2005-01-13 | 2006-07-27 | Sharp Corp | プラズマ処理装置および同装置により製造された半導体素子 |
US20080060579A1 (en) * | 2006-08-28 | 2008-03-13 | Atomic Energy Council-Institue Of Nuclear Energy Research | Apparatus of triple-electrode dielectric barrier discharge at atmospheric pressure |
US8535492B2 (en) * | 2007-11-28 | 2013-09-17 | Mehlin Dean Matthews | System and method for isotope selective chemical reactions |
US8372238B2 (en) * | 2008-05-20 | 2013-02-12 | Nordson Corporation | Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes |
WO2010074250A1 (ja) * | 2008-12-26 | 2010-07-01 | キヤノンアネルバ株式会社 | スパッタ装置及び磁気記憶媒体の製造方法 |
US8226795B2 (en) * | 2009-02-03 | 2012-07-24 | Nordson Corporation | Magnetic clips and substrate holders for use in a plasma processing system |
WO2013151763A1 (en) * | 2012-04-04 | 2013-10-10 | The Trustees Of Columbia University In The City Of New York | Systems and methods for high and ultra-high vacuum physical vapor deposition with in-situ magnetic field |
JP6745134B2 (ja) * | 2016-05-12 | 2020-08-26 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US10807085B2 (en) * | 2017-11-17 | 2020-10-20 | University Of Massachusetts | Silver recovery as Ag0nanoparticles from ion-exchange regenerant solution |
US20220310370A1 (en) * | 2021-03-23 | 2022-09-29 | Advanced Energy Industries, Inc. | Electrode phasing using control parameters |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3325394A (en) * | 1963-07-01 | 1967-06-13 | Ibm | Magnetic control of film deposition |
GB1522059A (en) * | 1976-10-19 | 1978-08-23 | Standard Telephones Cables Ltd | Plasma etching |
JPS5846057B2 (ja) * | 1979-03-19 | 1983-10-14 | 富士通株式会社 | プラズマ処理方法 |
US4422896A (en) * | 1982-01-26 | 1983-12-27 | Materials Research Corporation | Magnetically enhanced plasma process and apparatus |
JPS58204174A (ja) * | 1982-05-21 | 1983-11-28 | Hitachi Ltd | Rf対向スパツタ−装置用電源 |
JPS6066422A (ja) * | 1983-09-21 | 1985-04-16 | Kanegafuchi Chem Ind Co Ltd | 半導体製造法 |
JPH0719748B2 (ja) * | 1984-02-17 | 1995-03-06 | 鐘淵化学工業株式会社 | 製膜装置 |
US4601807A (en) * | 1985-01-17 | 1986-07-22 | International Business Machines Corporation | Reactor for plasma desmear of high aspect ratio hole |
US4618477A (en) * | 1985-01-17 | 1986-10-21 | International Business Machines Corporation | Uniform plasma for drill smear removal reactor |
JPS6223987A (ja) * | 1985-07-23 | 1987-01-31 | Ulvac Corp | ドライエツチング装置 |
JPS6297329A (ja) * | 1985-10-24 | 1987-05-06 | Ulvac Corp | ドライエツチング装置 |
US4657619A (en) * | 1985-11-29 | 1987-04-14 | Donnell Kevin P O | Diverter magnet arrangement for plasma processing system |
US4842707A (en) * | 1986-06-23 | 1989-06-27 | Oki Electric Industry Co., Ltd. | Dry process apparatus |
JP2594051B2 (ja) * | 1987-02-02 | 1997-03-26 | 東京エレクトロン株式会社 | プラズマ処理方法 |
EP0343500B1 (de) * | 1988-05-23 | 1994-01-19 | Nippon Telegraph And Telephone Corporation | Plasmaätzvorrichtung |
US4871421A (en) * | 1988-09-15 | 1989-10-03 | Lam Research Corporation | Split-phase driver for plasma etch system |
JPH06337193A (ja) * | 1993-05-27 | 1994-12-06 | Tokyo Hightech Kk | 真空乾燥装置 |
-
1990
- 1990-11-14 EP EP90121808A patent/EP0428161B1/de not_active Expired - Lifetime
- 1990-11-14 DE DE69032952T patent/DE69032952T2/de not_active Expired - Fee Related
- 1990-11-15 KR KR1019900018546A patent/KR0180900B1/ko not_active IP Right Cessation
-
1996
- 1996-01-11 US US08/587,822 patent/US5795452A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0428161A3 (en) | 1991-07-31 |
EP0428161B1 (de) | 1999-02-17 |
EP0428161A2 (de) | 1991-05-22 |
US5795452A (en) | 1998-08-18 |
KR0180900B1 (ko) | 1999-04-15 |
KR910010634A (ko) | 1991-06-29 |
DE69032952D1 (de) | 1999-03-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: HITACHI KOKUSAI ELECTRIC INC., TOKIO/TOKYO, JP KIN |
|
8339 | Ceased/non-payment of the annual fee |