DE69033089T2 - Durch elektronenzylotron hervorgebrachte resonanzplasmaquelle und arbeitsweise - Google Patents

Durch elektronenzylotron hervorgebrachte resonanzplasmaquelle und arbeitsweise

Info

Publication number
DE69033089T2
DE69033089T2 DE69033089T DE69033089T DE69033089T2 DE 69033089 T2 DE69033089 T2 DE 69033089T2 DE 69033089 T DE69033089 T DE 69033089T DE 69033089 T DE69033089 T DE 69033089T DE 69033089 T2 DE69033089 T2 DE 69033089T2
Authority
DE
Germany
Prior art keywords
plasma
chamber
outlet
magnets
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033089T
Other languages
English (en)
Other versions
DE69033089D1 (de
Inventor
Raphael Dandl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM International NV
Original Assignee
Applied Microwave Plasma Concepts Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Microwave Plasma Concepts Inc filed Critical Applied Microwave Plasma Concepts Inc
Publication of DE69033089D1 publication Critical patent/DE69033089D1/de
Application granted granted Critical
Publication of DE69033089T2 publication Critical patent/DE69033089T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
    • H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3345—Problems associated with etching anisotropy
DE69033089T 1989-03-09 1990-03-08 Durch elektronenzylotron hervorgebrachte resonanzplasmaquelle und arbeitsweise Expired - Fee Related DE69033089T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/320,947 US5133826A (en) 1989-03-09 1989-03-09 Electron cyclotron resonance plasma source
PCT/US1990/001270 WO1990010547A1 (en) 1989-03-09 1990-03-08 Electron cyclotron resonance plasma source and method of operation

Publications (2)

Publication Number Publication Date
DE69033089D1 DE69033089D1 (de) 1999-06-10
DE69033089T2 true DE69033089T2 (de) 1999-12-16

Family

ID=23248538

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033089T Expired - Fee Related DE69033089T2 (de) 1989-03-09 1990-03-08 Durch elektronenzylotron hervorgebrachte resonanzplasmaquelle und arbeitsweise

Country Status (6)

Country Link
US (1) US5133826A (de)
EP (1) EP0462209B1 (de)
JP (1) JP2886978B2 (de)
AT (1) ATE179831T1 (de)
DE (1) DE69033089T2 (de)
WO (1) WO1990010547A1 (de)

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US5370765A (en) * 1989-03-09 1994-12-06 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source and method of operation
US5061838A (en) * 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
DE69218720T2 (de) * 1991-10-17 1997-07-17 Applied Materials Inc Plasmareaktor
US6475333B1 (en) * 1993-07-26 2002-11-05 Nihon Shinku Gijutsu Kabushiki Kaisha Discharge plasma processing device
US5506475A (en) * 1994-03-22 1996-04-09 Martin Marietta Energy Systems, Inc. Microwave electron cyclotron electron resonance (ECR) ion source with a large, uniformly distributed, axially symmetric, ECR plasma volume
JPH07263192A (ja) * 1994-03-24 1995-10-13 Ulvac Japan Ltd エッチング装置
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
JPH0987851A (ja) * 1995-09-21 1997-03-31 Canon Inc マイクロ波プラズマ処理装置及び処理方法
JPH09180898A (ja) 1995-12-06 1997-07-11 Applied Materials Inc プラズマ発生器及び発生方法
US5783102A (en) * 1996-02-05 1998-07-21 International Business Machines Corporation Negative ion deductive source for etching high aspect ratio structures
US5707452A (en) * 1996-07-08 1998-01-13 Applied Microwave Plasma Concepts, Inc. Coaxial microwave applicator for an electron cyclotron resonance plasma source
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6146979A (en) 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US6228176B1 (en) 1998-02-11 2001-05-08 Silicon Genesis Corporation Contoured platen design for plasma immerson ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6213050B1 (en) 1998-12-01 2001-04-10 Silicon Genesis Corporation Enhanced plasma mode and computer system for plasma immersion ion implantation
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
WO2001011930A2 (en) * 1999-08-10 2001-02-15 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6873113B2 (en) * 2000-04-13 2005-03-29 Tokyo Electron Limited Stand alone plasma vacuum pump
US6729850B2 (en) 2001-10-31 2004-05-04 Tokyo Electron Limited Applied plasma duct system
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US6812647B2 (en) * 2003-04-03 2004-11-02 Wayne D. Cornelius Plasma generator useful for ion beam generation
DE602006002264D1 (de) * 2006-06-01 2008-09-25 Varian Spa Magnetanordnung für eine Sputter-Ionenpumpe
FR2904178B1 (fr) * 2006-07-21 2008-11-07 Centre Nat Rech Scient Dispositif et procede de production et/ou de confinement d'un plasma
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
EP1918965A1 (de) * 2006-11-02 2008-05-07 Dow Corning Corporation Verfahren und Apparat zur Erzeugung eines Films durch Abscheidung aus einem Plasma
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
CN105101604A (zh) * 2010-07-16 2015-11-25 财团法人工业技术研究院 电子回旋共振磁性模块与电子回旋共振装置
JP2013542613A (ja) 2010-10-27 2013-11-21 アプライド マテリアルズ インコーポレイテッド フォトレジスト線幅の荒れを制御するための方法及び装置
KR101871995B1 (ko) * 2011-07-29 2018-06-28 삼성디스플레이 주식회사 스퍼터 장치
US8962224B2 (en) 2012-08-13 2015-02-24 Applied Materials, Inc. Methods for controlling defects for extreme ultraviolet lithography (EUVL) photomask substrate
US9215789B1 (en) 2014-05-20 2015-12-15 King Abdulaziz City For Science And Technology Hybrid plasma source
JP6963848B2 (ja) * 2018-06-14 2021-11-10 株式会社エスイー 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法
JP6795143B2 (ja) * 2018-06-14 2020-12-02 株式会社エスイー 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2583250B1 (fr) * 1985-06-07 1989-06-30 France Etat Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique
JP2603217B2 (ja) * 1985-07-12 1997-04-23 株式会社日立製作所 表面処理方法及び表面処理装置
EP0264913B1 (de) * 1986-10-20 1994-06-22 Hitachi, Ltd. Plasmabearbeitungsgerät
KR880013424A (ko) * 1987-04-08 1988-11-30 미타 가츠시게 플라즈머 장치
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source

Also Published As

Publication number Publication date
DE69033089D1 (de) 1999-06-10
EP0462209B1 (de) 1999-05-06
US5133826A (en) 1992-07-28
EP0462209A1 (de) 1991-12-27
EP0462209A4 (en) 1992-07-29
JP2886978B2 (ja) 1999-04-26
WO1990010547A1 (en) 1990-09-20
JPH04505684A (ja) 1992-10-01
ATE179831T1 (de) 1999-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ASM JAPAN K.K., TAMA, TOKIO/TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: ASM INTERNATIONAL N.V., BILTHOVEN, NL

8339 Ceased/non-payment of the annual fee