DE69033286T2 - Verfahren und Vorrichtung zur Bildung eines Films - Google Patents
Verfahren und Vorrichtung zur Bildung eines FilmsInfo
- Publication number
- DE69033286T2 DE69033286T2 DE69033286T DE69033286T DE69033286T2 DE 69033286 T2 DE69033286 T2 DE 69033286T2 DE 69033286 T DE69033286 T DE 69033286T DE 69033286 T DE69033286 T DE 69033286T DE 69033286 T2 DE69033286 T2 DE 69033286T2
- Authority
- DE
- Germany
- Prior art keywords
- film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3359489A JPH07116596B2 (ja) | 1989-02-15 | 1989-02-15 | 薄膜形成方法、及びその装置 |
JP15678789A JPH0611912B2 (ja) | 1989-06-21 | 1989-06-21 | 有機薄膜形成方法、及びその装置並びに粒子線発生器 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69033286D1 DE69033286D1 (de) | 1999-10-21 |
DE69033286T2 true DE69033286T2 (de) | 2000-05-25 |
Family
ID=26372317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69033286T Expired - Fee Related DE69033286T2 (de) | 1989-02-15 | 1990-02-14 | Verfahren und Vorrichtung zur Bildung eines Films |
Country Status (4)
Country | Link |
---|---|
US (1) | US5064520A (de) |
EP (1) | EP0383301B1 (de) |
KR (1) | KR900013591A (de) |
DE (1) | DE69033286T2 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5837332A (en) * | 1989-11-19 | 1998-11-17 | Nihon Victor Kabushiki-Kaisha | Method and apparatus for preparing crystal thin films by using a surface acoustic wave |
CA2065833C (en) * | 1991-04-12 | 1997-12-30 | Shigeo Matsumaru | Process for forming metal film, on surface of synthetic resin substrate |
US5211824A (en) * | 1991-10-31 | 1993-05-18 | Siemens Solar Industries L.P. | Method and apparatus for sputtering of a liquid |
US5240583A (en) * | 1992-01-14 | 1993-08-31 | Honeywell Inc. | Apparatus to deposit multilayer films |
FR2691144B1 (fr) * | 1992-05-13 | 1994-10-14 | Alcatel Nv | Procédé d'élaboration d'une préforme pour fibre optique. |
BE1006967A3 (fr) * | 1993-04-16 | 1995-02-07 | Cockerill Rech & Dev | Procede pour la formation d'un revetement sur un substrat par pulverisation cathodique reactive. |
US5432313A (en) * | 1993-06-23 | 1995-07-11 | The United States Of America As Represented By The Secretary Of The Army | Target configurations for increasing the size of films prepared by laser ablation |
DE4427215A1 (de) * | 1993-08-02 | 1995-02-23 | Agency Ind Science Techn | Transparente und leitfähige ultradünne Filme und Verfahren zu ihrer Herstellung |
US5429732A (en) * | 1994-02-14 | 1995-07-04 | Hughes Aircraft Company | High rate ion beam sputtering process |
JPH08136932A (ja) * | 1994-11-08 | 1996-05-31 | Seiko Instr Inc | 液晶に微少に傾斜した垂直配列を導入する方法、液晶電気光学素子及び液晶ライトバルブ |
JP3523405B2 (ja) * | 1996-01-26 | 2004-04-26 | 株式会社日立製作所 | 荷電ビーム処理によるパターン形成方法及び荷電ビーム処理装置 |
US5667645A (en) * | 1996-06-28 | 1997-09-16 | Micron Technology, Inc. | Method of sputter deposition |
TW335504B (en) * | 1996-07-09 | 1998-07-01 | Applied Materials Inc | A method for providing full-face high density plasma deposition |
US5985033A (en) * | 1997-07-11 | 1999-11-16 | Applied Materials, Inc. | Apparatus and method for delivering a gas |
WO2000022184A1 (en) * | 1998-10-12 | 2000-04-20 | The Regents Of The University Of California | Laser deposition of thin films |
US6265722B1 (en) | 1999-08-31 | 2001-07-24 | Micron Technology, Inc. | Organic field ionization source |
US7194801B2 (en) * | 2000-03-24 | 2007-03-27 | Cymbet Corporation | Thin-film battery having ultra-thin electrolyte and associated method |
US20070281109A1 (en) * | 2000-03-31 | 2007-12-06 | Carl Zeiss Smt Ag | Multilayer system with protecting layer system and production method |
US6580053B1 (en) * | 2000-08-31 | 2003-06-17 | Sharp Laboratories Of America, Inc. | Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films |
US6610363B2 (en) | 2000-10-18 | 2003-08-26 | Nanofilm, Ltd. | Composition with film forming alkylsilsesquioxane polymer and method for applying hydrophobic films to surfaces |
US6890987B2 (en) | 2000-10-18 | 2005-05-10 | Nanofilm, Ltd. | Product for vapor deposition of films of amphiphilic molecules or polymers |
US6402904B1 (en) * | 2001-03-16 | 2002-06-11 | 4 Wave, Inc. | System and method for performing sputter deposition using independent ion and electron sources and a target biased with an a-symmetric bi-polar DC pulse signal |
US6679976B2 (en) | 2001-03-16 | 2004-01-20 | 4Wave, Inc. | System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals |
US20040198898A1 (en) * | 2001-08-03 | 2004-10-07 | Arora Pramod K. | Method for vapor deposition of hydrophobic films on surfaces |
JP3971603B2 (ja) * | 2001-12-04 | 2007-09-05 | キヤノンアネルバ株式会社 | 絶縁膜エッチング装置及び絶縁膜エッチング方法 |
JP3910466B2 (ja) * | 2002-02-26 | 2007-04-25 | 独立行政法人科学技術振興機構 | 半導体又は絶縁体/金属・層状複合クラスタの作製方法及び製造装置 |
US6719936B2 (en) * | 2002-08-23 | 2004-04-13 | Eastman Kodak Company | Method of making a solid compacted pellet of organic material for vacuum deposition of OLED displays |
US6906436B2 (en) * | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
US7603144B2 (en) | 2003-01-02 | 2009-10-13 | Cymbet Corporation | Active wireless tagging system on peel and stick substrate |
US7294209B2 (en) | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
US7211351B2 (en) | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
WO2005067645A2 (en) | 2004-01-06 | 2005-07-28 | Cymbet Corporation | Layered barrier structure having one or more definable layers and method |
US7216544B2 (en) * | 2005-03-25 | 2007-05-15 | The Boeing Company | Ultrasonic inspection reference standard for composite Materials |
US7776478B2 (en) | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
KR101387855B1 (ko) | 2005-07-15 | 2014-04-22 | 사임베트 코퍼레이션 | 연질 및 경질 전해질층을 가진 박막 배터리 및 그 제조방법 |
KR100699858B1 (ko) * | 2005-08-03 | 2007-03-27 | 삼성전자주식회사 | 극자외선 리소그래피용 반사 디바이스 및 그 제조 방법 및이를 적용한 극자외선 리소그래피용 마스크, 프로젝션광학계 및 리소그래피 장치 |
US8835880B2 (en) * | 2006-10-31 | 2014-09-16 | Fei Company | Charged particle-beam processing using a cluster source |
JP2009015910A (ja) * | 2007-06-29 | 2009-01-22 | Toshiba Corp | 電子線描画方法 |
US20110111131A1 (en) * | 2008-03-27 | 2011-05-12 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method for producing a multicomponent, polymer- and metal-containing layer system, device and coated article |
MY183993A (en) * | 2011-04-20 | 2021-03-17 | Oerlikon Trading Ag | Method for supplying sequential power impulses |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11236437B2 (en) * | 2017-08-28 | 2022-02-01 | Institut National De La Recherche Scientifique | Method and system for fabrication of crystals using laser-accelerated particle beams or secondary sources |
EP3762989A4 (de) | 2018-03-07 | 2021-12-15 | Space Charge, LLC | Dünnfilm-festkörper-energiespeichervorrichtungen |
CN111934101B (zh) * | 2020-07-31 | 2022-11-25 | 国家纳米科学中心 | 一种激发二维范德华材料极化激元的方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3492215A (en) * | 1967-02-27 | 1970-01-27 | Bendix Corp | Sputtering of material simultaneously evaporated onto the target |
US4381453A (en) * | 1980-12-31 | 1983-04-26 | International Business Machines Corporation | System and method for deflecting and focusing a broad ion beam |
US4416755A (en) * | 1981-04-03 | 1983-11-22 | Xerox Corporation | Apparatus and method for producing semiconducting films |
JPS6044A (ja) * | 1983-06-16 | 1985-01-05 | Hitachi Ltd | 二次イオン化質量分析装置 |
US4637869A (en) * | 1984-09-04 | 1987-01-20 | The Standard Oil Company | Dual ion beam deposition of amorphous semiconductor films |
US4664769A (en) * | 1985-10-28 | 1987-05-12 | International Business Machines Corporation | Photoelectric enhanced plasma glow discharge system and method including radiation means |
US4793908A (en) * | 1986-12-29 | 1988-12-27 | Rockwell International Corporation | Multiple ion source method and apparatus for fabricating multilayer optical films |
JP2555045B2 (ja) * | 1987-01-19 | 1996-11-20 | 株式会社日立製作所 | 薄膜形成方法及びその装置 |
JP3610999B2 (ja) | 1996-06-07 | 2005-01-19 | 松下電器産業株式会社 | 半導体素子の実装方法 |
-
1990
- 1990-02-14 US US07/480,131 patent/US5064520A/en not_active Expired - Fee Related
- 1990-02-14 DE DE69033286T patent/DE69033286T2/de not_active Expired - Fee Related
- 1990-02-14 EP EP90102897A patent/EP0383301B1/de not_active Expired - Lifetime
- 1990-02-15 KR KR1019900001831A patent/KR900013591A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE69033286D1 (de) | 1999-10-21 |
KR900013591A (ko) | 1990-09-06 |
EP0383301A2 (de) | 1990-08-22 |
US5064520A (en) | 1991-11-12 |
EP0383301B1 (de) | 1999-09-15 |
EP0383301A3 (de) | 1991-11-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |