DE69033417T2 - Epitaxialer reaktor hoher kapazität - Google Patents

Epitaxialer reaktor hoher kapazität

Info

Publication number
DE69033417T2
DE69033417T2 DE69033417T DE69033417T DE69033417T2 DE 69033417 T2 DE69033417 T2 DE 69033417T2 DE 69033417 T DE69033417 T DE 69033417T DE 69033417 T DE69033417 T DE 69033417T DE 69033417 T2 DE69033417 T2 DE 69033417T2
Authority
DE
Germany
Prior art keywords
high capacity
epitaxial reactor
reactor high
epitaxial
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033417T
Other languages
English (en)
Other versions
DE69033417D1 (de
Inventor
M Moore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Moore Epitaxial Inc
Original Assignee
Moore Epitaxial Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/317,260 external-priority patent/US5053247A/en
Application filed by Moore Epitaxial Inc filed Critical Moore Epitaxial Inc
Publication of DE69033417D1 publication Critical patent/DE69033417D1/de
Application granted granted Critical
Publication of DE69033417T2 publication Critical patent/DE69033417T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
DE69033417T 1989-02-28 1990-02-28 Epitaxialer reaktor hoher kapazität Expired - Fee Related DE69033417T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/317,260 US5053247A (en) 1989-02-28 1989-02-28 Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby
US07/477,396 US5207835A (en) 1989-02-28 1990-02-09 High capacity epitaxial reactor
PCT/US1990/001148 WO1990010093A1 (en) 1989-02-28 1990-02-28 A high capacity epitaxial reactor

Publications (2)

Publication Number Publication Date
DE69033417D1 DE69033417D1 (de) 2000-02-10
DE69033417T2 true DE69033417T2 (de) 2000-09-14

Family

ID=26980858

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033417T Expired - Fee Related DE69033417T2 (de) 1989-02-28 1990-02-28 Epitaxialer reaktor hoher kapazität

Country Status (5)

Country Link
US (1) US5207835A (de)
EP (1) EP0461194B1 (de)
JP (1) JP3132827B2 (de)
DE (1) DE69033417T2 (de)
WO (1) WO1990010093A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH685348A5 (de) * 1992-05-08 1995-06-15 Balzers Hochvakuum Vakuumbeschichtungsanlage mit drehgetriebenem Substratträger.
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5565382A (en) * 1993-10-12 1996-10-15 Applied Materials, Inc. Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas
US5558721A (en) * 1993-11-15 1996-09-24 The Furukawa Electric Co., Ltd. Vapor phase growth system and a gas-drive motor
JP3583467B2 (ja) * 1994-05-30 2004-11-04 株式会社東芝 半導体装置の製造装置及び製造方法
US6110289A (en) * 1997-02-25 2000-08-29 Moore Epitaxial, Inc. Rapid thermal processing barrel reactor for processing substrates
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6161311A (en) 1998-07-10 2000-12-19 Asm America, Inc. System and method for reducing particles in epitaxial reactors
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
US6169244B1 (en) 1999-05-21 2001-01-02 Moore Epitaxial, Inc. Thermocouple sheath cover
US6799603B1 (en) 1999-09-20 2004-10-05 Moore Epitaxial, Inc. Gas flow controller system
US6475284B1 (en) 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head
US6328221B1 (en) 2000-02-09 2001-12-11 Moore Epitaxial, Inc. Method for controlling a gas injector in a semiconductor processing reactor
US6347749B1 (en) 2000-02-09 2002-02-19 Moore Epitaxial, Inc. Semiconductor processing reactor controllable gas jet assembly
US6738683B1 (en) * 2000-09-05 2004-05-18 Cxe Equipment Services, Llc Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
JP4232330B2 (ja) * 2000-09-22 2009-03-04 東京エレクトロン株式会社 励起ガス形成装置、処理装置及び処理方法
JP4618920B2 (ja) * 2001-03-29 2011-01-26 東京エレクトロン株式会社 熱処理装置用ヒータの結線方法及び熱処理装置
JP4736269B2 (ja) * 2001-08-14 2011-07-27 信越半導体株式会社 シリンダ型気相成長装置
AU2003253873A1 (en) * 2002-07-15 2004-02-02 Aviza Technology, Inc. Apparatus and method for backfilling a semiconductor wafer process chamber
US20050106864A1 (en) * 2003-02-15 2005-05-19 Holger Jurgensen Process and device for depositing semiconductor layers
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US7897495B2 (en) * 2006-12-12 2011-03-01 Applied Materials, Inc. Formation of epitaxial layer containing silicon and carbon
US9064960B2 (en) * 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
US8388755B2 (en) * 2008-02-27 2013-03-05 Soitec Thermalization of gaseous precursors in CVD reactors
JP5151651B2 (ja) * 2008-04-22 2013-02-27 株式会社Ｓｕｍｃｏ 酸素イオン注入装置
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
JP2012028544A (ja) * 2010-07-23 2012-02-09 Ulvac Japan Ltd 基板加熱炉
US20160359080A1 (en) 2015-06-07 2016-12-08 Solarcity Corporation System, method and apparatus for chemical vapor deposition
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623712A (en) * 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process
US3796182A (en) * 1971-12-16 1974-03-12 Applied Materials Tech Susceptor structure for chemical vapor deposition reactor
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US4099041A (en) * 1977-04-11 1978-07-04 Rca Corporation Susceptor for heating semiconductor substrates
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4511788A (en) * 1983-02-09 1985-04-16 Ushio Denki Kabushiki Kaisha Light-radiant heating furnace
JPS61210622A (ja) * 1985-03-15 1986-09-18 Komatsu Ltd 半導体製造装置
US4728389A (en) * 1985-05-20 1988-03-01 Applied Materials, Inc. Particulate-free epitaxial process
US4789771A (en) * 1985-10-07 1988-12-06 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus
US5053247A (en) * 1989-02-28 1991-10-01 Moore Epitaxial, Inc. Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby

Also Published As

Publication number Publication date
JP3132827B2 (ja) 2001-02-05
EP0461194B1 (de) 2000-01-05
DE69033417D1 (de) 2000-02-10
US5207835A (en) 1993-05-04
WO1990010093A1 (en) 1990-09-07
EP0461194A1 (de) 1991-12-18
EP0461194A4 (en) 1992-07-08
JPH04503736A (ja) 1992-07-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee