DE69033617D1 - Flüchtige organische Barium-, Strontium- und Kalzium-Verbindungen und ein Verfahren zur Herstellung geschichteter Materialien, die Oxide oder Fluoride von Barium, Strontium oder Kalzium aus diesen Verbindungen enthalten - Google Patents

Flüchtige organische Barium-, Strontium- und Kalzium-Verbindungen und ein Verfahren zur Herstellung geschichteter Materialien, die Oxide oder Fluoride von Barium, Strontium oder Kalzium aus diesen Verbindungen enthalten

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Publication number
DE69033617D1
DE69033617D1 DE69033617T DE69033617T DE69033617D1 DE 69033617 D1 DE69033617 D1 DE 69033617D1 DE 69033617 T DE69033617 T DE 69033617T DE 69033617 T DE69033617 T DE 69033617T DE 69033617 D1 DE69033617 D1 DE 69033617D1
Authority
DE
Germany
Prior art keywords
strontium
calcium
barium
compounds
fluorides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033617T
Other languages
English (en)
Other versions
DE69033617T2 (de
Inventor
Klaas Timmer
Carolus Ida Maria Antoniu Spee
Adrianus Mackor
Harmen Anne Meinema
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innospec Ltd
Original Assignee
Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO filed Critical Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO
Application granted granted Critical
Publication of DE69033617D1 publication Critical patent/DE69033617D1/de
Publication of DE69033617T2 publication Critical patent/DE69033617T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/404—Oxides of alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic System
    • C07F3/003—Compounds containing elements of Groups 2 or 12 of the Periodic System without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
DE69033617T 1989-06-14 1990-06-11 Flüchtige organische Barium-, Strontium- und Kalzium-Verbindungen und ein Verfahren zur Herstellung geschichteter Materialien, die Oxide oder Fluoride von Barium, Strontium oder Kalzium aus diesen Verbindungen enthalten Expired - Fee Related DE69033617T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8901507A NL8901507A (nl) 1989-06-14 1989-06-14 Vluchtige aardkalimetaal-organische verbindingen en werkwijze voor de bereiding van gelaagde materialen met aardkalimetaaloxiden of -fluoriden uit deze verbindingen.

Publications (2)

Publication Number Publication Date
DE69033617D1 true DE69033617D1 (de) 2000-10-05
DE69033617T2 DE69033617T2 (de) 2001-04-26

Family

ID=19854835

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033617T Expired - Fee Related DE69033617T2 (de) 1989-06-14 1990-06-11 Flüchtige organische Barium-, Strontium- und Kalzium-Verbindungen und ein Verfahren zur Herstellung geschichteter Materialien, die Oxide oder Fluoride von Barium, Strontium oder Kalzium aus diesen Verbindungen enthalten

Country Status (6)

Country Link
US (1) US5248787A (de)
EP (2) EP0405634B1 (de)
JP (1) JP3132822B2 (de)
AT (1) ATE195943T1 (de)
DE (1) DE69033617T2 (de)
NL (1) NL8901507A (de)

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NL8901507A (nl) * 1989-06-14 1991-01-02 Tno Vluchtige aardkalimetaal-organische verbindingen en werkwijze voor de bereiding van gelaagde materialen met aardkalimetaaloxiden of -fluoriden uit deze verbindingen.
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US6218518B1 (en) 1990-07-06 2001-04-17 Advanced Technology Materials, Inc. Tetrahydrofuran-adducted group II β-diketonate complexes as source reagents for chemical vapor deposition
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5711816A (en) * 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
US7323581B1 (en) 1990-07-06 2008-01-29 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
GB9117562D0 (en) * 1991-08-14 1991-10-02 Ass Octel Group ii metal betadiketonates
US5319118A (en) * 1991-10-17 1994-06-07 Air Products And Chemicals, Inc. Volatile barium precursor and use of precursor in OMCVD process
US6010969A (en) * 1996-10-02 2000-01-04 Micron Technology, Inc. Method of depositing films on semiconductor devices by using carboxylate complexes
ATE454141T1 (de) * 1996-11-15 2010-01-15 Cytokine Pharmasciences Inc Guanylhydrazone die nützlich sind zur behandlung von mit t-zellen verbundenen krankheiten
US5876503A (en) * 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
US5719417A (en) * 1996-11-27 1998-02-17 Advanced Technology Materials, Inc. Ferroelectric integrated circuit structure
US6248392B1 (en) 1996-12-20 2001-06-19 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Ondersoek Tno Method for manufacturing a fiber-reinforced bioactive ceramic implant
NL1004867C2 (nl) * 1996-12-20 1998-06-23 Tno Met vezels versterkt bio-keramisch composietmateriaal.
US5980983A (en) * 1997-04-17 1999-11-09 The President And Fellows Of Harvard University Liquid precursors for formation of metal oxides
US5923970A (en) * 1997-11-20 1999-07-13 Advanced Technology Materials, Inc. Method of fabricating a ferrolelectric capacitor with a graded barrier layer structure
US6284654B1 (en) 1998-04-16 2001-09-04 Advanced Technology Materials, Inc. Chemical vapor deposition process for fabrication of hybrid electrodes
US6111122A (en) * 1998-04-28 2000-08-29 Advanced Technology Materials, Inc. Group II MOCVD source reagents, and method of forming Group II metal-containing films utilizing same
JP2002527528A (ja) * 1998-10-21 2002-08-27 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ アルカリ土類金属を含有する材料を形成するための液体化合物
EP1961755A1 (de) * 2007-02-21 2008-08-27 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Strontium-Silylamide, Addukte davon mit Lewisbasen, deren Herstellung und Abscheidung eines dunnen Strontiumfilmes
US8247617B2 (en) * 2007-05-16 2012-08-21 Air Products And Chemicals, Inc. Group 2 metal precursors for depositing multi-component metal oxide films
US20080286464A1 (en) * 2007-05-16 2008-11-20 Air Products And Chemicals, Inc. Group 2 Metal Precursors For Depositing Multi-Component Metal Oxide Films
EP2468754A1 (de) * 2010-12-07 2012-06-27 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Neue Diaza-Krone-Barium- und -Strontium-Vorläufer zur Gasphasenbeschichtung von Dünnfilmen
EP2468753A1 (de) * 2010-12-07 2012-06-27 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Strontiumvorläufer zur Gasphasenbeschichtung von Dünnfilmen
CN115838186A (zh) * 2022-10-26 2023-03-24 东部超导科技（苏州）有限公司 一种锶掺杂钡源及其制备方法与在制备高温超导带材中的应用

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558144A (en) * 1984-10-19 1985-12-10 Corning Glass Works Volatile metal complexes
JPS6281464A (ja) * 1985-10-04 1987-04-14 Kawaken Fine Chem Co Ltd インキの鮮明度向上剤
NL8901507A (nl) * 1989-06-14 1991-01-02 Tno Vluchtige aardkalimetaal-organische verbindingen en werkwijze voor de bereiding van gelaagde materialen met aardkalimetaaloxiden of -fluoriden uit deze verbindingen.

Also Published As

Publication number Publication date
ATE195943T1 (de) 2000-09-15
DE69033617T2 (de) 2001-04-26
EP0982309A3 (de) 2001-10-04
EP0982309A2 (de) 2000-03-01
JP3132822B2 (ja) 2001-02-05
EP0405634A3 (en) 1991-05-29
NL8901507A (nl) 1991-01-02
EP0405634A2 (de) 1991-01-02
EP0405634B1 (de) 2000-08-30
JPH03115245A (ja) 1991-05-16
US5248787A (en) 1993-09-28

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Legal Events

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8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: THE ASSOCIATED OCTEL CO. LTD., LONDON, GB

8339 Ceased/non-payment of the annual fee