DE69033862T2 - Effiziente parallele Programmierung von Datenblöcken in Multizustandsausführung - Google Patents

Effiziente parallele Programmierung von Datenblöcken in Multizustandsausführung

Info

Publication number
DE69033862T2
DE69033862T2 DE69033862T DE69033862T DE69033862T2 DE 69033862 T2 DE69033862 T2 DE 69033862T2 DE 69033862 T DE69033862 T DE 69033862T DE 69033862 T DE69033862 T DE 69033862T DE 69033862 T2 DE69033862 T2 DE 69033862T2
Authority
DE
Germany
Prior art keywords
data blocks
parallel programming
efficient parallel
state execution
execution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69033862T
Other languages
English (en)
Other versions
DE69033862D1 (de
Inventor
Mehrotra Sanjay
Harari Eliyahou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26990766&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69033862(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE69033862D1 publication Critical patent/DE69033862D1/de
Application granted granted Critical
Publication of DE69033862T2 publication Critical patent/DE69033862T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5631—Concurrent multilevel reading of more than one cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5645—Multilevel memory with current-mirror arrangements
DE69033862T 1989-04-13 1990-04-12 Effiziente parallele Programmierung von Datenblöcken in Multizustandsausführung Expired - Lifetime DE69033862T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33757989A 1989-04-13 1989-04-13
US07508273 US5172338B1 (en) 1989-04-13 1990-04-11 Multi-state eeprom read and write circuits and techniques

Publications (2)

Publication Number Publication Date
DE69033862D1 DE69033862D1 (de) 2001-12-20
DE69033862T2 true DE69033862T2 (de) 2002-06-13

Family

ID=26990766

Family Applications (4)

Application Number Title Priority Date Filing Date
DE69030959T Expired - Lifetime DE69030959T2 (de) 1989-04-13 1990-04-12 EEPROM mit Referenzzelle
DE69033023T Expired - Fee Related DE69033023T2 (de) 1989-04-13 1990-04-12 EEPROM mit den Ladungsverlusten der Speicherzellen folgenden Referenzzellen
DE69033862T Expired - Lifetime DE69033862T2 (de) 1989-04-13 1990-04-12 Effiziente parallele Programmierung von Datenblöcken in Multizustandsausführung
DE69033927T Expired - Lifetime DE69033927T2 (de) 1989-04-13 1990-04-12 Speicher-Abtastschaltkreis, der Vielfachstromspiegelschaltung verwendet

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69030959T Expired - Lifetime DE69030959T2 (de) 1989-04-13 1990-04-12 EEPROM mit Referenzzelle
DE69033023T Expired - Fee Related DE69033023T2 (de) 1989-04-13 1990-04-12 EEPROM mit den Ladungsverlusten der Speicherzellen folgenden Referenzzellen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69033927T Expired - Lifetime DE69033927T2 (de) 1989-04-13 1990-04-12 Speicher-Abtastschaltkreis, der Vielfachstromspiegelschaltung verwendet

Country Status (5)

Country Link
US (1) US5172338B1 (de)
EP (4) EP0756287B1 (de)
JP (1) JPH04507320A (de)
DE (4) DE69030959T2 (de)
WO (1) WO1990012400A1 (de)

Families Citing this family (739)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105146B2 (ja) * 1988-07-29 1995-11-13 三菱電機株式会社 不揮発性記憶装置
EP0617363B1 (de) 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JPH04221496A (ja) * 1990-03-29 1992-08-11 Intel Corp 単一基板上に設けられるコンピュータメモリ回路およびコンピュータメモリを消去するためのシーケンスを終らせる方法
JP3448051B2 (ja) * 1990-03-31 2003-09-16 株式会社東芝 不揮発性半導体記憶装置
JP2709751B2 (ja) * 1990-06-15 1998-02-04 三菱電機株式会社 不揮発性半導体記憶装置およびそのデータ消去方法
JP2519585B2 (ja) * 1990-07-03 1996-07-31 三菱電機株式会社 不揮発性半導体記憶装置
JP3454520B2 (ja) * 1990-11-30 2003-10-06 インテル・コーポレーション フラッシュ記憶装置の書込み状態を確認する回路及びその方法
US6002614A (en) * 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
JP3408552B2 (ja) * 1991-02-11 2003-05-19 インテル・コーポレーション 不揮発性半導体メモリをプログラム及び消去する回路とその方法
US5546561A (en) * 1991-02-11 1996-08-13 Intel Corporation Circuitry and method for selectively protecting the integrity of data stored within a range of addresses within a non-volatile semiconductor memory
KR960002004B1 (ko) * 1991-02-19 1996-02-09 가부시키가이샤 도시바 기록검증 제어회로를 갖춘 전기적으로 소거 및 프로그램가능한 독출전용 기억장치
US5295255A (en) * 1991-02-22 1994-03-15 Electronic Professional Services, Inc. Method and apparatus for programming a solid state processor with overleaved array memory modules
US5663901A (en) * 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
US5430859A (en) * 1991-07-26 1995-07-04 Sundisk Corporation Solid state memory system including plural memory chips and a serialized bus
US6230233B1 (en) * 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US5357462A (en) * 1991-09-24 1994-10-18 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
JPH0589687A (ja) * 1991-09-27 1993-04-09 Nec Corp 不揮発性半導体記憶装置
US5778418A (en) * 1991-09-27 1998-07-07 Sandisk Corporation Mass computer storage system having both solid state and rotating disk types of memory
JP3375087B2 (ja) * 1991-10-21 2003-02-10 ローム株式会社 半導体記憶装置およびその記憶情報読出方法
US5270980A (en) * 1991-10-28 1993-12-14 Eastman Kodak Company Sector erasable flash EEPROM
US6347051B2 (en) 1991-11-26 2002-02-12 Hitachi, Ltd. Storage device employing a flash memory
US5369647A (en) * 1991-12-16 1994-11-29 Intel Corporation Circuitry and method for testing a write state machine
US6781895B1 (en) 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP2732471B2 (ja) * 1991-12-27 1998-03-30 富士通株式会社 不揮発性半導体記憶装置
EP0903753B1 (de) * 1991-12-27 2002-03-20 Fujitsu Limited Nicht-flüchtige Halbleiter-Speicher-Vorrichtung
JP3178909B2 (ja) * 1992-01-10 2001-06-25 株式会社東芝 半導体メモリ装置
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US7071060B1 (en) 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
JPH05233426A (ja) * 1992-02-20 1993-09-10 Fujitsu Ltd フラッシュ・メモリ使用方法
US5544103A (en) * 1992-03-03 1996-08-06 Xicor, Inc. Compact page-erasable eeprom non-volatile memory
US5532962A (en) * 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US6549974B2 (en) * 1992-06-22 2003-04-15 Hitachi, Ltd. Semiconductor storage apparatus including a controller for sending first and second write commands to different nonvolatile memories in a parallel or time overlapped manner
US5592415A (en) 1992-07-06 1997-01-07 Hitachi, Ltd. Non-volatile semiconductor memory
US5428621A (en) * 1992-09-21 1995-06-27 Sundisk Corporation Latent defect handling in EEPROM devices
US5519843A (en) * 1993-03-15 1996-05-21 M-Systems Flash memory system providing both BIOS and user storage capability
US5479638A (en) * 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
US5388083A (en) * 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
US5424991A (en) * 1993-04-01 1995-06-13 Cypress Semiconductor Corporation Floating gate nonvolatile memory with uniformly erased threshold voltage
US5488711A (en) * 1993-04-01 1996-01-30 Microchip Technology Incorporated Serial EEPROM device and associated method for reducing data load time using a page mode write cache
JPH06312593A (ja) 1993-04-28 1994-11-08 Toshiba Corp 外部記憶装置、外部記憶装置ユニットおよび外部記憶装置の製造方法
JP3179943B2 (ja) * 1993-07-12 2001-06-25 株式会社東芝 半導体記憶装置
JP3252306B2 (ja) * 1993-08-10 2002-02-04 株式会社日立製作所 半導体不揮発性記憶装置
JPH0757484A (ja) * 1993-08-11 1995-03-03 Sony Corp Ｎｏｒ型不揮発性メモリ制御回路
JP3462894B2 (ja) 1993-08-27 2003-11-05 株式会社東芝 不揮発性半導体メモリ及びそのデータプログラム方法
US6091639A (en) 1993-08-27 2000-07-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US7137011B1 (en) * 1993-09-01 2006-11-14 Sandisk Corporation Removable mother/daughter peripheral card
US5887145A (en) * 1993-09-01 1999-03-23 Sandisk Corporation Removable mother/daughter peripheral card
SG47058A1 (en) * 1993-09-10 1998-03-20 Intel Corp Circuitry and method for selecting a drain programming voltage for a nonvolatile memory
JP3512833B2 (ja) * 1993-09-17 2004-03-31 株式会社東芝 不揮発性半導体記憶装置
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5457606A (en) * 1993-11-10 1995-10-10 Raymond Engineering Inc. Hermetically sealed PC card unit including a header secured to a connector
US5596486A (en) * 1993-11-10 1997-01-21 Kaman Aerospace Corporation Hermetically sealed memory or PC card unit having a frame, header and covers in bonded engagement
US5828601A (en) * 1993-12-01 1998-10-27 Advanced Micro Devices, Inc. Programmed reference
JP3999822B2 (ja) * 1993-12-28 2007-10-31 株式会社東芝 記憶システム
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
GB9401227D0 (en) * 1994-01-22 1994-03-16 Deas Alexander R Non-volatile digital memory device with multi-level storage cells
JP3476952B2 (ja) * 1994-03-15 2003-12-10 株式会社東芝 不揮発性半導体記憶装置
JP3202498B2 (ja) * 1994-03-15 2001-08-27 株式会社東芝 半導体記憶装置
JP3383398B2 (ja) * 1994-03-22 2003-03-04 株式会社東芝 半導体パッケージ
AU2593595A (en) * 1994-06-02 1996-01-04 Intel Corporation Sensing schemes for flash memory with multilevel cells
JP3798810B2 (ja) * 1994-06-02 2006-07-19 インテル・コーポレーション セル当たり単一ビットからセル当たり複数ビットへのダイナミック・メモリ
US5450363A (en) * 1994-06-02 1995-09-12 Intel Corporation Gray coding for a multilevel cell memory system
US5485422A (en) * 1994-06-02 1996-01-16 Intel Corporation Drain bias multiplexing for multiple bit flash cell
US5497354A (en) 1994-06-02 1996-03-05 Intel Corporation Bit map addressing schemes for flash memory
US5539690A (en) * 1994-06-02 1996-07-23 Intel Corporation Write verify schemes for flash memory with multilevel cells
US5515317A (en) * 1994-06-02 1996-05-07 Intel Corporation Addressing modes for a dynamic single bit per cell to multiple bit per cell memory
US5537357A (en) * 1994-06-27 1996-07-16 Intel Corporation Method for preconditioning a nonvolatile memory array
EP0700051A1 (de) * 1994-08-31 1996-03-06 STMicroelectronics S.r.l. Schaltkreis zum Programmieren einzelner Bits von Worten in einem nichtflüchtigen Speicher
US5508971A (en) * 1994-10-17 1996-04-16 Sandisk Corporation Programmable power generation circuit for flash EEPROM memory systems
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
JP3610621B2 (ja) * 1994-11-11 2005-01-19 ソニー株式会社 不揮発性半導体メモリ装置
JP3388921B2 (ja) * 1994-11-29 2003-03-24 株式会社東芝 集積回路カードの製造方法
US5600593A (en) * 1994-12-06 1997-02-04 National Semiconductor Corporation Apparatus and method for reducing erased threshold voltage distribution in flash memory arrays
DE69524558T2 (de) * 1995-01-27 2002-07-18 St Microelectronics Srl Schnittweises Annäherungsverfahren zum Abtasten von nichtflüchtigen Mehrfachniveauspeicherzellen und dementsprechende Abtastschaltung
KR100566463B1 (ko) 1995-01-31 2006-03-31 가부시끼가이샤 히다치 세이사꾸쇼 반도체 메모리 장치
JP3336813B2 (ja) * 1995-02-01 2002-10-21 ソニー株式会社 不揮発性半導体メモリ装置
USRE38997E1 (en) * 1995-02-03 2006-02-28 Kabushiki Kaisha Toshiba Information storage and information processing system utilizing state-designating member provided on supporting card surface which produces write-permitting or write-inhibiting signal
US6471130B2 (en) 1995-02-03 2002-10-29 Kabushiki Kaisha Toshiba Information storage apparatus and information processing apparatus using the same
JP3660382B2 (ja) 1995-02-03 2005-06-15 株式会社東芝 情報記憶装置およびそれに用いるコネクタ部
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
EP0753859B1 (de) * 1995-07-14 2000-01-26 STMicroelectronics S.r.l. Verfahren zur Einstellung der Schwellspannung einer Referenzspeicherzelle
JP3782840B2 (ja) * 1995-07-14 2006-06-07 株式会社ルネサステクノロジ 外部記憶装置およびそのメモリアクセス制御方法
US6081878A (en) 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
KR0172282B1 (ko) * 1995-08-10 1999-03-30 김주용 플래쉬 메모리 장치
US5596526A (en) * 1995-08-15 1997-01-21 Lexar Microsystems, Inc. Non-volatile memory system of multi-level transistor cells and methods using same
JPH0964240A (ja) 1995-08-25 1997-03-07 Toshiba Corp 半導体装置および半導体装置の製造方法
TW389909B (en) 1995-09-13 2000-05-11 Toshiba Corp Nonvolatile semiconductor memory device and its usage
US6166979A (en) 1995-09-13 2000-12-26 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for using the same
US5815434A (en) * 1995-09-29 1998-09-29 Intel Corporation Multiple writes per a single erase for a nonvolatile memory
US5687114A (en) * 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
US5629892A (en) * 1995-10-16 1997-05-13 Advanced Micro Devices, Inc. Flash EEPROM memory with separate reference array
KR100253868B1 (ko) * 1995-11-13 2000-05-01 니시무로 타이죠 불휘발성 반도체기억장치
JP3392604B2 (ja) * 1995-11-14 2003-03-31 株式会社東芝 不揮発性半導体記憶装置
US5701266A (en) * 1995-12-14 1997-12-23 Intel Corporation Programming flash memory using distributed learning methods
US5729489A (en) * 1995-12-14 1998-03-17 Intel Corporation Programming flash memory using predictive learning methods
US5677869A (en) * 1995-12-14 1997-10-14 Intel Corporation Programming flash memory using strict ordering of states
US5737265A (en) * 1995-12-14 1998-04-07 Intel Corporation Programming flash memory using data stream analysis
EP0782148B1 (de) 1995-12-29 2003-02-26 STMicroelectronics S.r.l. Verfahren zum Verhindern von Störungen während des Programmierens und des Löschens eines nichtflüchtigen Speichers
US5680341A (en) * 1996-01-16 1997-10-21 Invoice Technology Pipelined record and playback for analog non-volatile memory
DE69635105D1 (de) * 1996-01-31 2005-09-29 St Microelectronics Srl Mehrstufige Speicherschaltungen und entsprechende Lese- und Schreibverfahren
WO1997032253A1 (en) 1996-02-29 1997-09-04 Hitachi, Ltd. Semiconductor memory device having faulty cells
US5787445A (en) * 1996-03-07 1998-07-28 Norris Communications Corporation Operating system including improved file management for use in devices utilizing flash memory as main memory
US5619448A (en) * 1996-03-14 1997-04-08 Myson Technology, Inc. Non-volatile memory device and apparatus for reading a non-volatile memory array
US5712815A (en) * 1996-04-22 1998-01-27 Advanced Micro Devices, Inc. Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
EP0805454A1 (de) * 1996-04-30 1997-11-05 STMicroelectronics S.r.l. Abtastschaltung zum Lesen und Nachprüfen eines Speicherzelleninhalts
US5815439A (en) * 1996-04-30 1998-09-29 Agate Semiconductor, Inc. Stabilization circuits and techniques for storage and retrieval of single or multiple digital bits per memory cell
JP3740212B2 (ja) * 1996-05-01 2006-02-01 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
TW332334B (en) * 1996-05-31 1998-05-21 Toshiba Co Ltd The semiconductor substrate and its producing method and semiconductor apparatus
JPH09327990A (ja) * 1996-06-11 1997-12-22 Toshiba Corp カード型記憶装置
FR2749967B1 (fr) * 1996-06-13 1998-09-25 Sgs Thomson Microelectronics Dispositif de lecture de cellules d'une memoire
JP2001508910A (ja) * 1996-06-14 2001-07-03 シーメンス アクチエンゲゼルシヤフト 多重レベルの電荷を記憶するためのデバイス及び方法並びに該デバイスの読出しのためのデバイス及び方法
DE69630024D1 (de) * 1996-06-18 2003-10-23 St Microelectronics Srl Nichtflüchtiger Speicher mit Einzelzellenreferenzsignalgeneratorschaltung zum Auslesen von Speicherzellen
EP0907954B1 (de) * 1996-06-24 2000-06-07 Advanced Micro Devices, Inc. Verfahren für einen merhfachen, bits pro zelle flash eeprom, speicher mit seitenprogrammierungsmodus und leseverfahren
US5724284A (en) * 1996-06-24 1998-03-03 Advanced Micro Devices, Inc. Multiple bits-per-cell flash shift register page buffer
US5648930A (en) * 1996-06-28 1997-07-15 Symbios Logic Inc. Non-volatile memory which is programmable from a power source
JP3925944B2 (ja) * 1996-07-10 2007-06-06 エルピーダメモリ株式会社 不揮発性半導体記憶装置
US6335878B1 (en) 1998-07-28 2002-01-01 Hitachi, Ltd. Non-volatile multi-level semiconductor flash memory device and method of driving same
JP2917924B2 (ja) * 1996-07-30 1999-07-12 日本電気株式会社 不揮発性半導体記憶装置
US5742543A (en) 1996-08-19 1998-04-21 Intel Corporation Flash memory device having a page mode of operation
US6857099B1 (en) 1996-09-18 2005-02-15 Nippon Steel Corporation Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
US5798968A (en) * 1996-09-24 1998-08-25 Sandisk Corporation Plane decode/virtual sector architecture
US5661687A (en) * 1996-09-30 1997-08-26 Symbios Logic Inc. Drain excluded EPROM cell
US5838616A (en) * 1996-09-30 1998-11-17 Symbios, Inc. Gate edge aligned EEPROM transistor
JP3397600B2 (ja) * 1996-11-01 2003-04-14 株式会社東芝 不揮発性半導体記憶装置
US5890192A (en) 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
US6005895A (en) 1996-12-20 1999-12-21 Rambus Inc. Apparatus and method for multilevel signaling
US5771187A (en) * 1996-12-23 1998-06-23 Lsi Logic Corporation Multiple level storage DRAM cell
US5847990A (en) * 1996-12-23 1998-12-08 Lsi Logic Corporation Ram cell capable of storing 3 logic states
US5982659A (en) * 1996-12-23 1999-11-09 Lsi Logic Corporation Memory cell capable of storing more than two logic states by using different via resistances
US5808932A (en) * 1996-12-23 1998-09-15 Lsi Logic Corporation Memory system which enables storage and retrieval of more than two states in a memory cell
US5784328A (en) * 1996-12-23 1998-07-21 Lsi Logic Corporation Memory system including an on-chip temperature sensor for regulating the refresh rate of a DRAM array
US5761110A (en) * 1996-12-23 1998-06-02 Lsi Logic Corporation Memory cell capable of storing more than two logic states by using programmable resistances
GB2326748B (en) * 1997-02-12 2001-09-12 Hyundai Electronics America A nonvolatile memory structure
JPH10302030A (ja) * 1997-02-28 1998-11-13 Toshiba Corp 接続装置、および情報処理装置
US5870335A (en) 1997-03-06 1999-02-09 Agate Semiconductor, Inc. Precision programming of nonvolatile memory cells
US6487116B2 (en) 1997-03-06 2002-11-26 Silicon Storage Technology, Inc. Precision programming of nonvolatile memory cells
US5787039A (en) * 1997-03-06 1998-07-28 Macronix International Co., Ltd. Low current floating gate programming with bit-by-bit verification
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US5867423A (en) * 1997-04-10 1999-02-02 Lsi Logic Corporation Memory circuit and method for multivalued logic storage by process variations
KR100323554B1 (ko) * 1997-05-14 2002-03-08 니시무로 타이죠 불휘발성반도체메모리장치
JP3602294B2 (ja) 1997-05-28 2004-12-15 株式会社ルネサステクノロジ 半導体メモリおよび情報記憶装置
US5841695A (en) * 1997-05-29 1998-11-24 Lsi Logic Corporation Memory system using multiple storage mechanisms to enable storage and retrieval of more than two states in a memory cell
US6297096B1 (en) * 1997-06-11 2001-10-02 Saifun Semiconductors Ltd. NROM fabrication method
US6031760A (en) * 1997-07-29 2000-02-29 Kabushiki Kaisha Toshiba Semiconductor memory device and method of programming the same
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
IL125604A (en) 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6178118B1 (en) 1997-08-26 2001-01-23 Macronix International Co., Ltd. Electrically programmable semiconductor device with multi-level wordline voltages for programming multi-level threshold voltages
US5959892A (en) * 1997-08-26 1999-09-28 Macronix International Co., Ltd. Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
US5909449A (en) 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
US5889697A (en) * 1997-10-08 1999-03-30 Advanced Micro Devices Memory cell for storing at least three logic states
US5956350A (en) * 1997-10-27 1999-09-21 Lsi Logic Corporation Built in self repair for DRAMs using on-chip temperature sensing and heating
US5867429A (en) * 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
EP1211692B1 (de) * 1997-11-21 2006-08-09 BTG International Inc Speichervorrichtung mit programmierbarer nichtflüchtiger Multibitspeicherzelle und Vorrichtung und Verfahren zum Abgrenzen von Speicherzuständen der Zelle
EP1715490A1 (de) * 1997-11-21 2006-10-25 BTG International Inc Speichervorrichtung mit programmierbarer nichtflüchtiger Multibitspeicherzelle und Vorrichtung und Verfahren zum Abgrenzen von Speicherzuständen der Zelle
JP3693915B2 (ja) * 1997-11-21 2005-09-14 ビーティージー インターナショナル，インク． プログラマブル不揮発性複数ビットメモリセルを有する記憶装置およびそのセルの記憶状態を分界する装置と方法
KR100257854B1 (ko) * 1997-12-10 2000-06-01 김영환 플래쉬 메모리의 소거 방법
US6430077B1 (en) 1997-12-12 2002-08-06 Saifun Semiconductors Ltd. Method for regulating read voltage level at the drain of a cell in a symmetric array
US5963465A (en) 1997-12-12 1999-10-05 Saifun Semiconductors, Ltd. Symmetric segmented memory array architecture
US6633499B1 (en) 1997-12-12 2003-10-14 Saifun Semiconductors Ltd. Method for reducing voltage drops in symmetric array architectures
US6633496B2 (en) 1997-12-12 2003-10-14 Saifun Semiconductors Ltd. Symmetric architecture for memory cells having widely spread metal bit lines
US5859796A (en) * 1997-12-16 1999-01-12 Advanced Micro Devices, Inc. Programming of memory cells using connected floating gate analog reference cell
US5912844A (en) * 1998-01-28 1999-06-15 Macronix International Co., Ltd. Method for flash EEPROM data writing
US6606267B2 (en) * 1998-06-23 2003-08-12 Sandisk Corporation High data rate write process for non-volatile flash memories
US5969986A (en) * 1998-06-23 1999-10-19 Invox Technology High-bandwidth read and write architectures for non-volatile memories
US6040997A (en) * 1998-03-25 2000-03-21 Lexar Media, Inc. Flash memory leveling architecture having no external latch
TW407364B (en) * 1998-03-26 2000-10-01 Toshiba Corp Memory apparatus, card type memory apparatus, and electronic apparatus
US5909404A (en) * 1998-03-27 1999-06-01 Lsi Logic Corporation Refresh sampling built-in self test and repair circuit
EP0945869B1 (de) * 1998-03-27 2004-11-17 STMicroelectronics S.r.l. Verfahren zum Lesen einer Mehrbitspeicherzelle
US6038166A (en) * 1998-04-01 2000-03-14 Invox Technology High resolution multi-bit-per-cell memory
JP3237610B2 (ja) * 1998-05-19 2001-12-10 日本電気株式会社 不揮発性半導体記憶装置
EP0967617A1 (de) * 1998-06-22 1999-12-29 Texas Instruments Incorporated Schwebegattermultibitspeicherzellenanordnung, Zellenprogrammierungsverfahren und Stabilisierung der programmierten Ladung
EP0971361B1 (de) 1998-06-23 2003-12-10 SanDisk Corporation Hochdatenrateschreibverfahren für nicht-flüchtige FLASH-Speicher
US6208770B1 (en) 1998-09-18 2001-03-27 Eastman Kodak Company Digital colored corrected prints produced from colored film
US6490200B2 (en) 2000-03-27 2002-12-03 Sandisk Corporation Non-volatile memory with improved sensing and method therefor
US6044019A (en) 1998-10-23 2000-03-28 Sandisk Corporation Non-volatile memory with improved sensing and method therefor
AU1729100A (en) 1998-11-17 2000-06-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6282145B1 (en) 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6281075B1 (en) 1999-01-27 2001-08-28 Sandisk Corporation Method of controlling of floating gate oxide growth by use of an oxygen barrier
US6038169A (en) * 1999-03-18 2000-03-14 Halo Lsi Design & Device Technology, Inc. Read reference scheme for flash memory
US6601140B1 (en) * 1999-04-07 2003-07-29 Sony Corporation Memory unit, data processing unit, and data processing method using memory unit type
DE19916065A1 (de) * 1999-04-09 2000-10-19 Siemens Ag Programmierbarer Festwertspeicher und Verfahren zum Betreiben des Festwertspeichers
KR100544175B1 (ko) * 1999-05-08 2006-01-23 삼성전자주식회사 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법
KR100300549B1 (ko) 1999-06-16 2001-11-01 김영환 비휘발성 메모리 센싱장치 및 방법
US6151248A (en) * 1999-06-30 2000-11-21 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
US6103573A (en) 1999-06-30 2000-08-15 Sandisk Corporation Processing techniques for making a dual floating gate EEPROM cell array
US6091633A (en) * 1999-08-09 2000-07-18 Sandisk Corporation Memory array architecture utilizing global bit lines shared by multiple cells
US6243298B1 (en) 1999-08-19 2001-06-05 Azalea Microelectronics Corporation Non-volatile memory cell capable of being programmed and erased through substantially separate areas of one of its drain-side and source-side regions
US6288938B1 (en) 1999-08-19 2001-09-11 Azalea Microelectronics Corporation Flash memory architecture and method of operation
JP2001076496A (ja) * 1999-09-02 2001-03-23 Fujitsu Ltd 不揮発性メモリのデータ化け防止回路およびその方法
US6501684B1 (en) 1999-09-24 2002-12-31 Azalea Microelectronics Corporation Integrated circuit having an EEPROM and flash EPROM
AU7722700A (en) * 1999-10-18 2001-04-30 Intel Corporation Method and apparatus for secure automatic playback of content from removable mass storage media
US7269212B1 (en) 2000-09-05 2007-09-11 Rambus Inc. Low-latency equalization in multi-level, multi-line communication systems
US6396329B1 (en) 1999-10-19 2002-05-28 Rambus, Inc Method and apparatus for receiving high speed signals with low latency
US7161513B2 (en) 1999-10-19 2007-01-09 Rambus Inc. Apparatus and method for improving resolution of a current mode driver
US6327181B1 (en) * 1999-10-19 2001-12-04 Advanced Micro Devices Inc. Reference cell bitline path architecture for a simultaneous operation flash memory device
US7124221B1 (en) 1999-10-19 2006-10-17 Rambus Inc. Low latency multi-level communication interface
US6532556B1 (en) 2000-01-27 2003-03-11 Multi Level Memory Technology Data management for multi-bit-per-cell memories
US6363008B1 (en) 2000-02-17 2002-03-26 Multi Level Memory Technology Multi-bit-cell non-volatile memory with maximized data capacity
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6707713B1 (en) * 2000-03-01 2004-03-16 Advanced Micro Devices, Inc. Interlaced multi-level memory
US6662263B1 (en) 2000-03-03 2003-12-09 Multi Level Memory Technology Sectorless flash memory architecture
US6205056B1 (en) * 2000-03-14 2001-03-20 Advanced Micro Devices, Inc. Automated reference cell trimming verify
US6545912B1 (en) * 2000-04-25 2003-04-08 Advanced Micro Devices, Inc. Erase verify mode to evaluate negative Vt's
US6856568B1 (en) 2000-04-25 2005-02-15 Multi Level Memory Technology Refresh operations that change address mappings in a non-volatile memory
US6396744B1 (en) 2000-04-25 2002-05-28 Multi Level Memory Technology Flash memory with dynamic refresh
US7079422B1 (en) 2000-04-25 2006-07-18 Samsung Electronics Co., Ltd. Periodic refresh operations for non-volatile multiple-bit-per-cell memory
US6396741B1 (en) 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6928001B2 (en) 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6490204B2 (en) 2000-05-04 2002-12-03 Saifun Semiconductors Ltd. Programming and erasing methods for a reference cell of an NROM array
US6285615B1 (en) 2000-06-09 2001-09-04 Sandisk Corporation Multiple output current mirror with improved accuracy
WO2002001720A2 (en) * 2000-06-26 2002-01-03 Microchip Technology Incorporated Currentless non-volatile, programmable fuse cell
US6292394B1 (en) 2000-06-29 2001-09-18 Saifun Semiconductors Ltd. Method for programming of a semiconductor memory cell
JP4493169B2 (ja) * 2000-07-04 2010-06-30 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6396742B1 (en) * 2000-07-28 2002-05-28 Silicon Storage Technology, Inc. Testing of multilevel semiconductor memory
US6345001B1 (en) 2000-09-14 2002-02-05 Sandisk Corporation Compressed event counting technique and application to a flash memory system
US7113432B2 (en) * 2000-09-14 2006-09-26 Sandisk Corporation Compressed event counting technique and application to a flash memory system
US6512263B1 (en) * 2000-09-22 2003-01-28 Sandisk Corporation Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
US6538922B1 (en) * 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
US6570785B1 (en) 2000-10-31 2003-05-27 Sandisk Corporation Method of reducing disturbs in non-volatile memory
US6717851B2 (en) * 2000-10-31 2004-04-06 Sandisk Corporation Method of reducing disturbs in non-volatile memory
US6747892B2 (en) 2000-11-21 2004-06-08 Sandisk Corporation Sense amplifier for multilevel non-volatile integrated memory devices
US6331951B1 (en) * 2000-11-21 2001-12-18 Advanced Micro Devices, Inc. Method and system for embedded chip erase verification
US6684289B1 (en) 2000-11-22 2004-01-27 Sandisk Corporation Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory
KR100386296B1 (ko) 2000-12-30 2003-06-02 주식회사 하이닉스반도체 멀티레벨을 가지는 플래쉬 메모리를 프로그램/리드하기위한 회로 및 그 방법
US6466476B1 (en) 2001-01-18 2002-10-15 Multi Level Memory Technology Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell
US6614692B2 (en) 2001-01-18 2003-09-02 Saifun Semiconductors Ltd. EEPROM array and method for operation thereof
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
JP3631463B2 (ja) * 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
FR2820545B1 (fr) * 2001-02-02 2003-05-30 St Microelectronics Sa Procede et dispositif de verification d'un groupe de cellules de memoire non volatile
US7154141B2 (en) 2001-02-02 2006-12-26 Hyundai Electronics America Source side programming
FR2820539B1 (fr) * 2001-02-02 2003-05-30 St Microelectronics Sa Procede et dispositif de rafraichissement de cellules de reference
US6577535B2 (en) 2001-02-16 2003-06-10 Sandisk Corporation Method and system for distributed power generation in multi-chip memory systems
US6738289B2 (en) * 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
US7177181B1 (en) 2001-03-21 2007-02-13 Sandisk 3D Llc Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
US6677805B2 (en) 2001-04-05 2004-01-13 Saifun Semiconductors Ltd. Charge pump stage with body effect minimization
US6448750B1 (en) 2001-04-05 2002-09-10 Saifun Semiconductor Ltd. Voltage regulator for non-volatile memory with large power supply rejection ration and minimal current drain
US6584017B2 (en) * 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
IL148960A (en) * 2001-04-05 2005-09-25 Saifun Semiconductors Ltd Method for programming a reference cell
US6636440B2 (en) 2001-04-25 2003-10-21 Saifun Semiconductors Ltd. Method for operation of an EEPROM array, including refresh thereof
US6936887B2 (en) * 2001-05-18 2005-08-30 Sandisk Corporation Non-volatile memory cells utilizing substrate trenches
US6894343B2 (en) * 2001-05-18 2005-05-17 Sandisk Corporation Floating gate memory cells utilizing substrate trenches to scale down their size
US6522585B2 (en) 2001-05-25 2003-02-18 Sandisk Corporation Dual-cell soft programming for virtual-ground memory arrays
US7100107B2 (en) * 2001-05-30 2006-08-29 International Business Machines Corporation Method of changing service attributes in a service logic execution environment
TW559814B (en) * 2001-05-31 2003-11-01 Semiconductor Energy Lab Nonvolatile memory and method of driving the same
US6480422B1 (en) 2001-06-14 2002-11-12 Multi Level Memory Technology Contactless flash memory with shared buried diffusion bit line architecture
US6574139B2 (en) * 2001-06-20 2003-06-03 Fujitsu Limited Method and device for reading dual bit memory cells using multiple reference cells with two side read
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
CN100347667C (zh) * 2001-06-27 2007-11-07 索尼公司 集成电路器件、信息处理设备、信息存储器件的存储管理方法、移动终端设备、半导体集成电路器件、以及使用移动终端设备的通信方法
US7418344B2 (en) * 2001-08-02 2008-08-26 Sandisk Corporation Removable computer with mass storage
US6762092B2 (en) 2001-08-08 2004-07-13 Sandisk Corporation Scalable self-aligned dual floating gate memory cell array and methods of forming the array
US6985388B2 (en) * 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US7177197B2 (en) * 2001-09-17 2007-02-13 Sandisk Corporation Latched programming of memory and method
US6741502B1 (en) 2001-09-17 2004-05-25 Sandisk Corporation Background operation for memory cells
US7554842B2 (en) * 2001-09-17 2009-06-30 Sandisk Corporation Multi-purpose non-volatile memory card
US6560146B2 (en) * 2001-09-17 2003-05-06 Sandisk Corporation Dynamic column block selection
US7170802B2 (en) * 2003-12-31 2007-01-30 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US6717847B2 (en) * 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6552932B1 (en) * 2001-09-21 2003-04-22 Sandisk Corporation Segmented metal bitlines
US6643181B2 (en) 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell
US6897522B2 (en) 2001-10-31 2005-05-24 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6925007B2 (en) 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6678192B2 (en) 2001-11-02 2004-01-13 Sandisk Corporation Error management for writable tracking storage units
US6560152B1 (en) 2001-11-02 2003-05-06 Sandisk Corporation Non-volatile memory with temperature-compensated data read
US6967872B2 (en) * 2001-12-18 2005-11-22 Sandisk Corporation Method and system for programming and inhibiting multi-level, non-volatile memory cells
US6583007B1 (en) 2001-12-20 2003-06-24 Saifun Semiconductors Ltd. Reducing secondary injection effects
US6885585B2 (en) 2001-12-20 2005-04-26 Saifun Semiconductors Ltd. NROM NOR array
US20030135470A1 (en) * 2002-01-16 2003-07-17 Beard Robert E. Method and system for credit card purchases
US6850441B2 (en) * 2002-01-18 2005-02-01 Sandisk Corporation Noise reduction technique for transistors and small devices utilizing an episodic agitation
US6542407B1 (en) 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
US6621739B2 (en) * 2002-01-18 2003-09-16 Sandisk Corporation Reducing the effects of noise in non-volatile memories through multiple reads
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
JP4082913B2 (ja) * 2002-02-07 2008-04-30 株式会社ルネサステクノロジ メモリシステム
US6871257B2 (en) 2002-02-22 2005-03-22 Sandisk Corporation Pipelined parallel programming operation in a non-volatile memory system
US7221591B1 (en) 2002-05-06 2007-05-22 Samsung Electronics Co., Ltd. Fabricating bi-directional nonvolatile memory cells
US6747896B2 (en) 2002-05-06 2004-06-08 Multi Level Memory Technology Bi-directional floating gate nonvolatile memory
US6914820B1 (en) 2002-05-06 2005-07-05 Multi Level Memory Technology Erasing storage nodes in a bi-directional nonvolatile memory cell
EP1514309B1 (de) * 2002-06-19 2013-11-27 SanDisk Technologies Inc. Tiefer wortleitunsggraben zur abschirmung der kreuzkopplung zwischen benachbarten zellen eines nand-speichers
US6894930B2 (en) 2002-06-19 2005-05-17 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7292629B2 (en) * 2002-07-12 2007-11-06 Rambus Inc. Selectable-tap equalizer
US7362800B1 (en) 2002-07-12 2008-04-22 Rambus Inc. Auto-configured equalizer
US8861667B1 (en) 2002-07-12 2014-10-14 Rambus Inc. Clock data recovery circuit with equalizer clock calibration
US6826107B2 (en) 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
US6781877B2 (en) * 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
US6891753B2 (en) * 2002-09-24 2005-05-10 Sandisk Corporation Highly compact non-volatile memory and method therefor with internal serial buses
US6987693B2 (en) * 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US7327619B2 (en) * 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
EP1543529B1 (de) * 2002-09-24 2009-11-04 SanDisk Corporation Nichtflüchtiger speicher und ausleseverfahren
US6940753B2 (en) 2002-09-24 2005-09-06 Sandisk Corporation Highly compact non-volatile memory and method therefor with space-efficient data registers
US7443757B2 (en) * 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7196931B2 (en) 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US6983428B2 (en) 2002-09-24 2006-01-03 Sandisk Corporation Highly compact non-volatile memory and method thereof
US7046568B2 (en) * 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US7324393B2 (en) * 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
US6908817B2 (en) * 2002-10-09 2005-06-21 Sandisk Corporation Flash memory array with increased coupling between floating and control gates
CN100483552C (zh) * 2002-10-28 2009-04-29 桑迪士克股份有限公司 在非易失性存储系统中执行自动磨损平衡的方法
US6888755B2 (en) 2002-10-28 2005-05-03 Sandisk Corporation Flash memory cell arrays having dual control gates per memory cell charge storage element
US6992932B2 (en) 2002-10-29 2006-01-31 Saifun Semiconductors Ltd Method circuit and system for read error detection in a non-volatile memory array
US6963505B2 (en) 2002-10-29 2005-11-08 Aifun Semiconductors Ltd. Method circuit and system for determining a reference voltage
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
EP1426965A1 (de) 2002-12-04 2004-06-09 STMicroelectronics S.r.l. Leseschaltung für eine nichtflüchtige Speicherzelle insbesondere bei niedrigen Versorgungsspannungen und hoher Kapazitätsbelastung
JP4113423B2 (ja) * 2002-12-04 2008-07-09 シャープ株式会社 半導体記憶装置及びリファレンスセルの補正方法
US6901498B2 (en) 2002-12-09 2005-05-31 Sandisk Corporation Zone boundary adjustment for defects in non-volatile memories
US6944063B2 (en) * 2003-01-28 2005-09-13 Sandisk Corporation Non-volatile semiconductor memory with large erase blocks storing cycle counts
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7630237B2 (en) 2003-02-06 2009-12-08 Sandisk Corporation System and method for programming cells in non-volatile integrated memory devices
JP2004310650A (ja) * 2003-04-10 2004-11-04 Renesas Technology Corp メモリ装置
US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7045849B2 (en) * 2003-05-21 2006-05-16 Sandisk Corporation Use of voids between elements in semiconductor structures for isolation
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7105406B2 (en) * 2003-06-20 2006-09-12 Sandisk Corporation Self aligned non-volatile memory cell and process for fabrication
US6839280B1 (en) 2003-06-27 2005-01-04 Freescale Semiconductor, Inc. Variable gate bias for a reference transistor in a non-volatile memory
US6955967B2 (en) * 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. Non-volatile memory having a reference transistor and method for forming
US20060206677A1 (en) * 2003-07-03 2006-09-14 Electronics And Telecommunications Research Institute System and method of an efficient snapshot for shared large storage
ITMI20031619A1 (it) * 2003-08-06 2005-02-07 St Microelectronics Srl Amplificatore di rilevamento perfezionato.
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US6954393B2 (en) * 2003-09-16 2005-10-11 Saifun Semiconductors Ltd. Reading array cell with matched reference cell
US6956770B2 (en) * 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US7064980B2 (en) * 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US7046555B2 (en) 2003-09-17 2006-05-16 Sandisk Corporation Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7173852B2 (en) 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7221008B2 (en) * 2003-10-06 2007-05-22 Sandisk Corporation Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells
US20050144363A1 (en) * 2003-12-30 2005-06-30 Sinclair Alan W. Data boundary management
US7631138B2 (en) 2003-12-30 2009-12-08 Sandisk Corporation Adaptive mode switching of flash memory address mapping based on host usage characteristics
US7383375B2 (en) * 2003-12-30 2008-06-03 Sandisk Corporation Data run programming
US7173863B2 (en) * 2004-03-08 2007-02-06 Sandisk Corporation Flash controller cache architecture
US7139864B2 (en) 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
US8504798B2 (en) * 2003-12-30 2013-08-06 Sandisk Technologies Inc. Management of non-volatile memory systems having large erase blocks
US7433993B2 (en) * 2003-12-30 2008-10-07 San Disk Corportion Adaptive metablocks
US7594135B2 (en) * 2003-12-31 2009-09-22 Sandisk Corporation Flash memory system startup operation
US7154779B2 (en) * 2004-01-21 2006-12-26 Sandisk Corporation Non-volatile memory cell using high-k material inter-gate programming
US7466590B2 (en) * 2004-02-06 2008-12-16 Sandisk Corporation Self-boosting method for flash memory cells
US7161833B2 (en) 2004-02-06 2007-01-09 Sandisk Corporation Self-boosting system for flash memory cells
US7355237B2 (en) * 2004-02-13 2008-04-08 Sandisk Corporation Shield plate for limiting cross coupling between floating gates
US7183153B2 (en) * 2004-03-12 2007-02-27 Sandisk Corporation Method of manufacturing self aligned non-volatile memory cells
US7057939B2 (en) 2004-04-23 2006-06-06 Sandisk Corporation Non-volatile memory and control with improved partial page program capability
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
US7009889B2 (en) 2004-05-28 2006-03-07 Sandisk Corporation Comprehensive erase verification for non-volatile memory
US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
US7395384B2 (en) * 2004-07-21 2008-07-01 Sandisk Corproation Method and apparatus for maintaining data on non-volatile memory systems
US8607016B2 (en) * 2004-07-21 2013-12-10 Sandisk Technologies Inc. FAT analysis for optimized sequential cluster management
US7427027B2 (en) 2004-07-28 2008-09-23 Sandisk Corporation Optimized non-volatile storage systems
GB2432024B (en) 2004-07-30 2008-05-07 Spansion Llc Semiconductor device and method for generating sense signal
US8375146B2 (en) * 2004-08-09 2013-02-12 SanDisk Technologies, Inc. Ring bus structure and its use in flash memory systems
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
KR100660534B1 (ko) * 2004-12-09 2006-12-26 삼성전자주식회사 불휘발성 메모리 장치의 프로그램 검증방법
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7441067B2 (en) * 2004-11-15 2008-10-21 Sandisk Corporation Cyclic flash memory wear leveling
US7416956B2 (en) * 2004-11-23 2008-08-26 Sandisk Corporation Self-aligned trench filling for narrow gap isolation regions
US7381615B2 (en) * 2004-11-23 2008-06-03 Sandisk Corporation Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices
US7535765B2 (en) 2004-12-09 2009-05-19 Saifun Semiconductors Ltd. Non-volatile memory device and method for reading cells
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7420847B2 (en) 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7366826B2 (en) * 2004-12-16 2008-04-29 Sandisk Corporation Non-volatile memory and method with multi-stream update tracking
US7315916B2 (en) 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7412560B2 (en) * 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7386655B2 (en) * 2004-12-16 2008-06-10 Sandisk Corporation Non-volatile memory and method with improved indexing for scratch pad and update blocks
US7849381B2 (en) 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US7882299B2 (en) * 2004-12-21 2011-02-01 Sandisk Corporation System and method for use of on-chip non-volatile memory write cache
US7313019B2 (en) * 2004-12-21 2007-12-25 Intel Corporation Step voltage generation
US7202125B2 (en) * 2004-12-22 2007-04-10 Sandisk Corporation Low-voltage, multiple thin-gate oxide and low-resistance gate electrode
US7482223B2 (en) * 2004-12-22 2009-01-27 Sandisk Corporation Multi-thickness dielectric for semiconductor memory
US6980471B1 (en) * 2004-12-23 2005-12-27 Sandisk Corporation Substrate electron injection techniques for programming non-volatile charge storage memory cells
US20060140007A1 (en) * 2004-12-29 2006-06-29 Raul-Adrian Cernea Non-volatile memory and method with shared processing for an aggregate of read/write circuits
CN1838323A (zh) 2005-01-19 2006-09-27 赛芬半导体有限公司 可预防固定模式编程的方法
US20060161724A1 (en) * 2005-01-20 2006-07-20 Bennett Alan D Scheduling of housekeeping operations in flash memory systems
US7315917B2 (en) 2005-01-20 2008-01-01 Sandisk Corporation Scheduling of housekeeping operations in flash memory systems
US8000502B2 (en) 2005-03-09 2011-08-16 Sandisk Technologies Inc. Portable memory storage device with biometric identification security
US7113427B1 (en) * 2005-03-09 2006-09-26 National Semiconductor Corporation NVM PMOS-cell with one erased and two programmed states
US7251160B2 (en) 2005-03-16 2007-07-31 Sandisk Corporation Non-volatile memory and method with power-saving read and program-verify operations
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US7348667B2 (en) * 2005-03-22 2008-03-25 International Business Machines Corporation System and method for noise reduction in multi-layer ceramic packages
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7447078B2 (en) 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
US7170784B2 (en) * 2005-04-01 2007-01-30 Sandisk Corporation Non-volatile memory and method with control gate compensation for source line bias errors
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7173854B2 (en) * 2005-04-01 2007-02-06 Sandisk Corporation Non-volatile memory and method with compensation for source line bias errors
KR100739967B1 (ko) * 2005-05-27 2007-07-16 주식회사 하이닉스반도체 플래시 메모리 장치의 프로그램 방법
US7259993B2 (en) * 2005-06-03 2007-08-21 Infineon Technologies Ag Reference scheme for a non-volatile semiconductor memory device
US7190621B2 (en) * 2005-06-03 2007-03-13 Infineon Technologies Ag Sensing scheme for a non-volatile semiconductor memory cell
US7215587B2 (en) * 2005-07-05 2007-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Tracking circuit for a memory device
US7656710B1 (en) 2005-07-14 2010-02-02 Sau Ching Wong Adaptive operations for nonvolatile memories
JP2007027760A (ja) 2005-07-18 2007-02-01 Saifun Semiconductors Ltd 高密度不揮発性メモリアレイ及び製造方法
US7447077B2 (en) * 2005-08-05 2008-11-04 Halo Lsi, Inc. Referencing scheme for trap memory
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7345918B2 (en) * 2005-08-31 2008-03-18 Micron Technology, Inc. Selective threshold voltage verification and compaction
US7580287B2 (en) 2005-09-01 2009-08-25 Micron Technology, Inc. Program and read trim setting
US20070059945A1 (en) * 2005-09-12 2007-03-15 Nima Mohklesi Atomic layer deposition with nitridation and oxidation
US7221138B2 (en) 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US7640424B2 (en) * 2005-10-13 2009-12-29 Sandisk Corporation Initialization of flash storage via an embedded controller
US7541240B2 (en) 2005-10-18 2009-06-02 Sandisk Corporation Integration process flow for flash devices with low gap fill aspect ratio
US7631162B2 (en) 2005-10-27 2009-12-08 Sandisck Corporation Non-volatile memory with adaptive handling of data writes
US7509471B2 (en) * 2005-10-27 2009-03-24 Sandisk Corporation Methods for adaptively handling data writes in non-volatile memories
US7634585B2 (en) * 2005-11-04 2009-12-15 Sandisk Corporation In-line cache using nonvolatile memory between host and disk device
US7379330B2 (en) * 2005-11-08 2008-05-27 Sandisk Corporation Retargetable memory cell redundancy methods
US7737483B2 (en) * 2005-12-06 2010-06-15 Sandisk Corporation Low resistance void-free contacts
US7615448B2 (en) * 2005-12-06 2009-11-10 Sandisk Corporation Method of forming low resistance void-free contacts
US7355888B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
US7355889B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Method for programming non-volatile memory with reduced program disturb using modified pass voltages
US7495294B2 (en) * 2005-12-21 2009-02-24 Sandisk Corporation Flash devices with shared word lines
US7655536B2 (en) * 2005-12-21 2010-02-02 Sandisk Corporation Methods of forming flash devices with shared word lines
EP2528096B1 (de) 2005-12-27 2016-08-31 SanDisk Technologies LLC Programmierverfahren einer Flash-Speichervorrichtung mit einer Verstärkerplatte
US7536627B2 (en) * 2005-12-27 2009-05-19 Sandisk Corporation Storing downloadable firmware on bulk media
US7362615B2 (en) * 2005-12-27 2008-04-22 Sandisk Corporation Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
US7436703B2 (en) * 2005-12-27 2008-10-14 Sandisk Corporation Active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
US7546515B2 (en) * 2005-12-27 2009-06-09 Sandisk Corporation Method of storing downloadable firmware on bulk media
US7551489B2 (en) * 2005-12-28 2009-06-23 Intel Corporation Multi-level memory cell sensing
US7307887B2 (en) * 2005-12-29 2007-12-11 Sandisk Corporation Continued verification in non-volatile memory write operations
US7224614B1 (en) 2005-12-29 2007-05-29 Sandisk Corporation Methods for improved program-verify operations in non-volatile memories
US7352629B2 (en) * 2005-12-29 2008-04-01 Sandisk Corporation Systems for continued verification in non-volatile memory write operations
US7733704B2 (en) 2005-12-29 2010-06-08 Sandisk Corporation Non-volatile memory with power-saving multi-pass sensing
US7447094B2 (en) * 2005-12-29 2008-11-04 Sandisk Corporation Method for power-saving multi-pass sensing in non-volatile memory
US7310255B2 (en) * 2005-12-29 2007-12-18 Sandisk Corporation Non-volatile memory with improved program-verify operations
US7352627B2 (en) 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
US7254071B2 (en) * 2006-01-12 2007-08-07 Sandisk Corporation Flash memory devices with trimmed analog voltages
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7457178B2 (en) * 2006-01-12 2008-11-25 Sandisk Corporation Trimming of analog voltages in flash memory devices
US20070272090A1 (en) * 2006-02-01 2007-11-29 Bommaraju Tilak V Hydrogen mitigation and energy generation with water-activated chemical heaters
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7638835B2 (en) 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
WO2007112202A2 (en) 2006-03-24 2007-10-04 Sandisk Corporation Non-volatile memory and method with redundancy data buffered in remote buffer circuits
US7394690B2 (en) * 2006-03-24 2008-07-01 Sandisk Corporation Method for column redundancy using data latches in solid-state memories
US7224605B1 (en) 2006-03-24 2007-05-29 Sandisk Corporation Non-volatile memory with redundancy data buffered in data latches for defective locations
US7324389B2 (en) * 2006-03-24 2008-01-29 Sandisk Corporation Non-volatile memory with redundancy data buffered in remote buffer circuits
WO2007112201A2 (en) 2006-03-24 2007-10-04 Sandisk Corporation Non-volatile memory and method with redundancy data buffered in data latches for defective locations
US7352635B2 (en) * 2006-03-24 2008-04-01 Sandisk Corporation Method for remote redundancy for non-volatile memory
US7511995B2 (en) * 2006-03-30 2009-03-31 Sandisk Corporation Self-boosting system with suppression of high lateral electric fields
US7428165B2 (en) * 2006-03-30 2008-09-23 Sandisk Corporation Self-boosting method with suppression of high lateral electric fields
US20070236519A1 (en) * 2006-03-31 2007-10-11 Edelen John G Multi-Level Memory for Micro-Fluid Ejection Heads
US7467253B2 (en) * 2006-04-13 2008-12-16 Sandisk Corporation Cycle count storage systems
US7451264B2 (en) * 2006-04-13 2008-11-11 Sandisk Corporation Cycle count storage methods
US7951669B2 (en) 2006-04-13 2011-05-31 Sandisk Corporation Methods of making flash memory cell arrays having dual control gates per memory cell charge storage element
US7499339B2 (en) * 2006-07-19 2009-03-03 Sandisk Corporation High-performance flash memory data transfer
US7525855B2 (en) * 2006-04-24 2009-04-28 Sandisk Corporation Method of high-performance flash memory data transfer
US7499369B2 (en) * 2006-07-19 2009-03-03 Sandisk Corporation Method of high-performance flash memory data transfer
US7345926B2 (en) * 2006-04-24 2008-03-18 Sandisk Corporation High-performance flash memory data transfer
US7366028B2 (en) 2006-04-24 2008-04-29 Sandisk Corporation Method of high-performance flash memory data transfer
US7366029B2 (en) * 2006-04-24 2008-04-29 Sandisk Corporation High-performance flash memory data transfer
US7701779B2 (en) * 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
WO2007131062A2 (en) 2006-05-05 2007-11-15 Sandisk Corporation Non-volatile memory with background data latch caching during read operations and methods therefor
US7286408B1 (en) 2006-05-05 2007-10-23 Sandisk Corporation Boosting methods for NAND flash memory
US7436709B2 (en) * 2006-05-05 2008-10-14 Sandisk Corporation NAND flash memory with boosting
US8239735B2 (en) 2006-05-12 2012-08-07 Apple Inc. Memory Device with adaptive capacity
US7697326B2 (en) 2006-05-12 2010-04-13 Anobit Technologies Ltd. Reducing programming error in memory devices
US8156403B2 (en) 2006-05-12 2012-04-10 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
CN103258572B (zh) 2006-05-12 2016-12-07 苹果公司 存储设备中的失真估计和消除
US20070266296A1 (en) * 2006-05-15 2007-11-15 Conley Kevin M Nonvolatile Memory with Convolutional Coding
US7840875B2 (en) * 2006-05-15 2010-11-23 Sandisk Corporation Convolutional coding methods for nonvolatile memory
US7809994B2 (en) * 2006-05-17 2010-10-05 Sandisk Corporation Error correction coding for multiple-sector pages in flash memory devices
US20070300130A1 (en) * 2006-05-17 2007-12-27 Sandisk Corporation Method of Error Correction Coding for Multiple-Sector Pages in Flash Memory Devices
US20070281105A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070277735A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20100024732A1 (en) * 2006-06-02 2010-02-04 Nima Mokhlesi Systems for Flash Heating in Atomic Layer Deposition
US20070281082A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
US7342831B2 (en) * 2006-06-16 2008-03-11 Sandisk Corporation System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7391650B2 (en) * 2006-06-16 2008-06-24 Sandisk Corporation Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7349261B2 (en) * 2006-06-19 2008-03-25 Sandisk Corporation Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7492633B2 (en) * 2006-06-19 2009-02-17 Sandisk Corporation System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7304893B1 (en) 2006-06-30 2007-12-04 Sandisk Corporation Method of partial page fail bit detection in flash memory devices
US7355892B2 (en) * 2006-06-30 2008-04-08 Sandisk Corporation Partial page fail bit detection in flash memory devices
WO2008021736A2 (en) 2006-08-16 2008-02-21 Sandisk Corporation Nonvolatile memories with shaped floating gates
US7755132B2 (en) 2006-08-16 2010-07-13 Sandisk Corporation Nonvolatile memories with shaped floating gates
US7494860B2 (en) * 2006-08-16 2009-02-24 Sandisk Corporation Methods of forming nonvolatile memories with L-shaped floating gates
WO2008026203A2 (en) 2006-08-27 2008-03-06 Anobit Technologies Estimation of non-linear distortion in memory devices
US7440326B2 (en) 2006-09-06 2008-10-21 Sandisk Corporation Programming non-volatile memory with improved boosting
US7885112B2 (en) * 2007-09-07 2011-02-08 Sandisk Corporation Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
US7606966B2 (en) * 2006-09-08 2009-10-20 Sandisk Corporation Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory
US7734861B2 (en) * 2006-09-08 2010-06-08 Sandisk Corporation Pseudo random and command driven bit compensation for the cycling effects in flash memory
US7606077B2 (en) * 2006-09-12 2009-10-20 Sandisk Corporation Non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage
US7453731B2 (en) * 2006-09-12 2008-11-18 Sandisk Corporation Method for non-volatile memory with linear estimation of initial programming voltage
US7606091B2 (en) * 2006-09-12 2009-10-20 Sandisk Corporation Method for non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage
EP2383748A3 (de) 2006-09-12 2012-03-28 SanDisk Corporation Nichtflüchtiger Speicher und Verfahren zur linearen Schätzung von anfänglichen Programmierungsspannung
US7599223B2 (en) * 2006-09-12 2009-10-06 Sandisk Corporation Non-volatile memory with linear estimation of initial programming voltage
US7605579B2 (en) 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
US7646054B2 (en) * 2006-09-19 2010-01-12 Sandisk Corporation Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7696044B2 (en) * 2006-09-19 2010-04-13 Sandisk Corporation Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7615445B2 (en) * 2006-09-21 2009-11-10 Sandisk Corporation Methods of reducing coupling between floating gates in nonvolatile memory
US20080074920A1 (en) * 2006-09-21 2008-03-27 Henry Chien Nonvolatile Memory with Reduced Coupling Between Floating Gates
US7886204B2 (en) 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7716538B2 (en) 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US8189378B2 (en) * 2006-09-27 2012-05-29 Sandisk Technologies Inc. Reducing program disturb in non-volatile storage
US8184478B2 (en) * 2006-09-27 2012-05-22 Sandisk Technologies Inc. Apparatus with reduced program disturb in non-volatile storage
US7805663B2 (en) 2006-09-28 2010-09-28 Sandisk Corporation Methods of adapting operation of nonvolatile memory
TWI353521B (en) * 2006-09-28 2011-12-01 Sandisk Corp Soft-input soft-output decoder for nonvolatile mem
US20080092015A1 (en) * 2006-09-28 2008-04-17 Yigal Brandman Nonvolatile memory with adaptive operation
US7904783B2 (en) * 2006-09-28 2011-03-08 Sandisk Corporation Soft-input soft-output decoder for nonvolatile memory
US7818653B2 (en) * 2006-09-28 2010-10-19 Sandisk Corporation Methods of soft-input soft-output decoding for nonvolatile memory
US20080091901A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Method for non-volatile memory with worst-case control data management
US20080091871A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Non-volatile memory with worst-case control data management
US7391638B2 (en) 2006-10-24 2008-06-24 Sandisk 3D Llc Memory device for protecting memory cells during programming
US7589989B2 (en) 2006-10-24 2009-09-15 Sandisk 3D Llc Method for protecting memory cells during programming
US7420851B2 (en) 2006-10-24 2008-09-02 San Disk 3D Llc Memory device for controlling current during programming of memory cells
US7420850B2 (en) * 2006-10-24 2008-09-02 Sandisk 3D Llc Method for controlling current during programming of memory cells
US7975192B2 (en) 2006-10-30 2011-07-05 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7596031B2 (en) 2006-10-30 2009-09-29 Sandisk Corporation Faster programming of highest multi-level state for non-volatile memory
CN101601094B (zh) 2006-10-30 2013-03-27 苹果公司 使用多个门限读取存储单元的方法
US7558109B2 (en) * 2006-11-03 2009-07-07 Sandisk Corporation Nonvolatile memory with variable read threshold
US7904780B2 (en) 2006-11-03 2011-03-08 Sandisk Corporation Methods of modulating error correction coding
US8001441B2 (en) * 2006-11-03 2011-08-16 Sandisk Technologies Inc. Nonvolatile memory with modulated error correction coding
US7904788B2 (en) * 2006-11-03 2011-03-08 Sandisk Corporation Methods of varying read threshold voltage in nonvolatile memory
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7900102B2 (en) 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7593263B2 (en) 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US7847341B2 (en) 2006-12-20 2010-12-07 Nanosys, Inc. Electron blocking layers for electronic devices
US20080150003A1 (en) * 2006-12-20 2008-06-26 Jian Chen Electron blocking layers for electronic devices
US20080150009A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US8686490B2 (en) 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
US20080150004A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US7642160B2 (en) * 2006-12-21 2010-01-05 Sandisk Corporation Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches
US7800161B2 (en) * 2006-12-21 2010-09-21 Sandisk Corporation Flash NAND memory cell array with charge storage elements positioned in trenches
US20080157169A1 (en) * 2006-12-28 2008-07-03 Yuan Jack H Shield plates for reduced field coupling in nonvolatile memory
US20080160680A1 (en) * 2006-12-28 2008-07-03 Yuan Jack H Methods of fabricating shield plates for reduced field coupling in nonvolatile memory
US7468918B2 (en) * 2006-12-29 2008-12-23 Sandisk Corporation Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
US7463531B2 (en) * 2006-12-29 2008-12-09 Sandisk Corporation Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
US7433241B2 (en) * 2006-12-29 2008-10-07 Sandisk Corporation Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
US7450430B2 (en) * 2006-12-29 2008-11-11 Sandisk Corporation Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
US7978541B2 (en) * 2007-01-02 2011-07-12 Marvell World Trade Ltd. High speed interface for multi-level memory
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US7502255B2 (en) * 2007-03-07 2009-03-10 Sandisk Corporation Method for cache page copy in a non-volatile memory
US7499320B2 (en) * 2007-03-07 2009-03-03 Sandisk Corporation Non-volatile memory with cache page copy
CN101715595A (zh) 2007-03-12 2010-05-26 爱诺彼得技术有限责任公司 存储器单元读取阈的自适应估计
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
US7577031B2 (en) * 2007-03-29 2009-08-18 Sandisk Corporation Non-volatile memory with compensation for variations along a word line
US7508713B2 (en) * 2007-03-29 2009-03-24 Sandisk Corporation Method of compensating variations along a word line in a non-volatile memory
US7745285B2 (en) 2007-03-30 2010-06-29 Sandisk Corporation Methods of forming and operating NAND memory with side-tunneling
US7606076B2 (en) * 2007-04-05 2009-10-20 Sandisk Corporation Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
US7643348B2 (en) * 2007-04-10 2010-01-05 Sandisk Corporation Predictive programming in non-volatile memory
US7551483B2 (en) * 2007-04-10 2009-06-23 Sandisk Corporation Non-volatile memory with predictive programming
US8001320B2 (en) 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
KR100890017B1 (ko) * 2007-04-23 2009-03-25 삼성전자주식회사 프로그램 디스터브를 감소시킬 수 있는 플래시 메모리 장치및 그것의 프로그램 방법
US8351262B2 (en) * 2007-04-23 2013-01-08 Samsung Electronics Co., Ltd. Flash memory device and program method thereof
WO2008139441A2 (en) 2007-05-12 2008-11-20 Anobit Technologies Ltd. Memory device with internal signal processing unit
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US7532515B2 (en) * 2007-05-14 2009-05-12 Intel Corporation Voltage reference generator using big flash cell
US20080294813A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Managing Housekeeping Operations in Flash Memory
US20080294814A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Flash Memory System with Management of Housekeeping Operations
US7701780B2 (en) 2007-05-31 2010-04-20 Micron Technology, Inc. Non-volatile memory cell healing
US7489553B2 (en) * 2007-06-07 2009-02-10 Sandisk Corporation Non-volatile memory with improved sensing having bit-line lockout control
US7492640B2 (en) * 2007-06-07 2009-02-17 Sandisk Corporation Sensing with bit-line lockout control in non-volatile memory
US7986553B2 (en) * 2007-06-15 2011-07-26 Micron Technology, Inc. Programming of a solid state memory utilizing analog communication of bit patterns
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US7688634B2 (en) * 2007-08-06 2010-03-30 Qimonda Ag Method of operating an integrated circuit having at least one memory cell
US7818493B2 (en) * 2007-09-07 2010-10-19 Sandisk Corporation Adaptive block list management
US8174905B2 (en) 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7545673B2 (en) 2007-09-25 2009-06-09 Sandisk Il Ltd. Using MLC flash as SLC by writing dummy data
US7978520B2 (en) 2007-09-27 2011-07-12 Sandisk Corporation Compensation of non-volatile memory chip non-idealities by program pulse adjustment
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8068360B2 (en) 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
US8527819B2 (en) 2007-10-19 2013-09-03 Apple Inc. Data storage in analog memory cell arrays having erase failures
US8270246B2 (en) 2007-11-13 2012-09-18 Apple Inc. Optimized selection of memory chips in multi-chips memory devices
US8296498B2 (en) * 2007-11-13 2012-10-23 Sandisk Technologies Inc. Method and system for virtual fast access non-volatile RAM
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US7701761B2 (en) * 2007-12-20 2010-04-20 Sandisk Corporation Read, verify word line reference voltage to track source level
US7764547B2 (en) * 2007-12-20 2010-07-27 Sandisk Corporation Regulation of source potential to combat cell source IR drop
US8085586B2 (en) 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US7593265B2 (en) * 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory
US8156398B2 (en) 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US7787282B2 (en) 2008-03-21 2010-08-31 Micron Technology, Inc. Sensing resistance variable memory
JP4439569B2 (ja) * 2008-04-24 2010-03-24 株式会社東芝 メモリシステム
US7957197B2 (en) * 2008-05-28 2011-06-07 Sandisk Corporation Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
US7826271B2 (en) * 2008-06-12 2010-11-02 Sandisk Corporation Nonvolatile memory with index programming and reduced verify
US7813172B2 (en) * 2008-06-12 2010-10-12 Sandisk Corporation Nonvolatile memory with correlated multiple pass programming
US7800945B2 (en) * 2008-06-12 2010-09-21 Sandisk Corporation Method for index programming and reduced verify in nonvolatile memory
US7796435B2 (en) * 2008-06-12 2010-09-14 Sandisk Corporation Method for correlated multiple pass programming in nonvolatile memory
US8498151B1 (en) 2008-08-05 2013-07-30 Apple Inc. Data storage in analog memory cells using modified pass voltages
US7924613B1 (en) * 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US7715235B2 (en) * 2008-08-25 2010-05-11 Sandisk Corporation Non-volatile memory and method for ramp-down programming
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US7755946B2 (en) * 2008-09-19 2010-07-13 Sandisk Corporation Data state-based temperature compensation during sensing in non-volatile memory
US7768836B2 (en) * 2008-10-10 2010-08-03 Sandisk Corporation Nonvolatile memory and method with reduced program verify by ignoring fastest and/or slowest programming bits
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8045375B2 (en) * 2008-10-24 2011-10-25 Sandisk Technologies Inc. Programming non-volatile memory with high resolution variable initial programming pulse
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8174857B1 (en) 2008-12-31 2012-05-08 Anobit Technologies Ltd. Efficient readout schemes for analog memory cell devices using multiple read threshold sets
US7944754B2 (en) 2008-12-31 2011-05-17 Sandisk Corporation Non-volatile memory and method with continuous scanning time-domain sensing
US8248831B2 (en) 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US7813181B2 (en) 2008-12-31 2010-10-12 Sandisk Corporation Non-volatile memory and method for sensing with pipelined corrections for neighboring perturbations
US8094500B2 (en) 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US8244960B2 (en) 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US8700840B2 (en) 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
US8040744B2 (en) 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US20100220514A1 (en) * 2009-03-02 2010-09-02 Lyric Semiconductor, Inc. Storage devices with soft processing
US8458114B2 (en) 2009-03-02 2013-06-04 Analog Devices, Inc. Analog computation using numerical representations with uncertainty
US8832354B2 (en) 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8107306B2 (en) 2009-03-27 2012-01-31 Analog Devices, Inc. Storage devices with soft processing
US8026544B2 (en) 2009-03-30 2011-09-27 Sandisk Technologies Inc. Fabricating and operating a memory array having a multi-level cell region and a single-level cell region
KR101793286B1 (ko) 2009-04-08 2017-11-02 샌디스크 테크놀로지스 엘엘씨 수직의 비트 라인들 및 단면 워드 라인 아키텍처를 가지는 재프로그래밍 가능한 메모리 요소들의 3차원 어레이
US8199576B2 (en) * 2009-04-08 2012-06-12 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
US8351236B2 (en) 2009-04-08 2013-01-08 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
US7983065B2 (en) 2009-04-08 2011-07-19 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8296503B2 (en) * 2009-05-26 2012-10-23 Mediatek Inc. Data updating and recovering methods for a non-volatile memory array
US8027195B2 (en) 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US8102705B2 (en) 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US7974124B2 (en) 2009-06-24 2011-07-05 Sandisk Corporation Pointer based column selection techniques in non-volatile memories
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
KR101554727B1 (ko) * 2009-07-13 2015-09-23 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
US8144511B2 (en) 2009-08-19 2012-03-27 Sandisk Technologies Inc. Selective memory cell program and erase
JP2011054248A (ja) 2009-09-02 2011-03-17 Toshiba Corp 参照電流生成回路
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8144512B2 (en) 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8468294B2 (en) 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
US8546214B2 (en) 2010-04-22 2013-10-01 Sandisk Technologies Inc. P-type control gate in non-volatile storage and methods for forming same
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
US8381018B2 (en) 2010-05-21 2013-02-19 Mediatek Inc. Method for data recovery for flash devices
US8526237B2 (en) 2010-06-08 2013-09-03 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
US8547720B2 (en) 2010-06-08 2013-10-01 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US8369156B2 (en) 2010-07-13 2013-02-05 Sandisk Technologies Inc. Fast random access to non-volatile storage
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8645794B1 (en) 2010-07-31 2014-02-04 Apple Inc. Data storage in analog memory cells using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8493781B1 (en) 2010-08-12 2013-07-23 Apple Inc. Interference mitigation using individual word line erasure operations
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US8374031B2 (en) 2010-09-29 2013-02-12 SanDisk Technologies, Inc. Techniques for the fast settling of word lines in NAND flash memory
EP2731110B1 (de) 2010-12-14 2016-09-07 SanDisk Technologies LLC Architektur für dreidimensionalen nichtflüchtigen Speicher mit vertikalen Bitleitungen
US9227456B2 (en) 2010-12-14 2016-01-05 Sandisk 3D Llc Memories with cylindrical read/write stacks
EP2652740A2 (de) 2010-12-14 2013-10-23 Sandisk 3D LLC Architektur für dreidimensionale nichtflüchtige speicherung mit vertikalen bitleitungen
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
US8472257B2 (en) 2011-03-24 2013-06-25 Sandisk Technologies Inc. Nonvolatile memory and method for improved programming with reduced verify
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
US8334796B2 (en) 2011-04-08 2012-12-18 Sandisk Technologies Inc. Hardware efficient on-chip digital temperature coefficient voltage generator and method
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8843693B2 (en) 2011-05-17 2014-09-23 SanDisk Technologies, Inc. Non-volatile memory and method with improved data scrambling
US8526233B2 (en) 2011-05-23 2013-09-03 Sandisk Technologies Inc. Ramping pass voltage to enhance channel boost in memory device, with optional temperature compensation
US8432740B2 (en) 2011-07-21 2013-04-30 Sandisk Technologies Inc. Program algorithm with staircase waveform decomposed into multiple passes
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
WO2013048376A1 (en) 2011-09-27 2013-04-04 Hewlett-Packard Development Company, L.P. Circuit that selects eproms individually and in parallel
US8705293B2 (en) 2011-10-20 2014-04-22 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory suitable for quick pass write
US8630120B2 (en) 2011-10-20 2014-01-14 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
WO2013058960A2 (en) 2011-10-20 2013-04-25 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US20130151755A1 (en) 2011-12-12 2013-06-13 Reuven Elhamias Non-Volatile Storage Systems with Go To Sleep Adaption
US9269425B2 (en) 2011-12-30 2016-02-23 Sandisk 3D Llc Low forming voltage non-volatile storage device
US8842471B2 (en) 2012-01-06 2014-09-23 Sandisk Technologies Inc. Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: program to verify transition
US8509007B2 (en) 2012-02-27 2013-08-13 Infineon Technologies Ag Hybrid read scheme for multi-level data
US8730722B2 (en) 2012-03-02 2014-05-20 Sandisk Technologies Inc. Saving of data in cases of word-line to word-line short in memory arrays
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8817569B2 (en) 2012-03-19 2014-08-26 Sandisk Technologies Inc. Immunity against temporary and short power drops in non-volatile memory
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
US9171584B2 (en) 2012-05-15 2015-10-27 Sandisk 3D Llc Three dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines
US10318158B2 (en) 2012-05-17 2019-06-11 Brilliant Points, Inc. System and method for digital signaling and digital storage
US8860594B2 (en) 2012-05-17 2014-10-14 Brilliant Points, Inc. System and method for digital signaling
US9281029B2 (en) 2012-06-15 2016-03-08 Sandisk 3D Llc Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof
US8895437B2 (en) 2012-06-15 2014-11-25 Sandisk 3D Llc Method for forming staircase word lines in a 3D non-volatile memory having vertical bit lines
US8971141B2 (en) 2012-06-28 2015-03-03 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory and hybrid lockout
US9293195B2 (en) 2012-06-28 2016-03-22 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory
US20140003176A1 (en) 2012-06-28 2014-01-02 Man Lung Mui Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power Consumption
US8750045B2 (en) 2012-07-27 2014-06-10 Sandisk Technologies Inc. Experience count dependent program algorithm for flash memory
US9329986B2 (en) 2012-09-10 2016-05-03 Sandisk Technologies Inc. Peak current management in multi-die non-volatile memory devices
US9164526B2 (en) 2012-09-27 2015-10-20 Sandisk Technologies Inc. Sigma delta over-sampling charge pump analog-to-digital converter
US9810723B2 (en) 2012-09-27 2017-11-07 Sandisk Technologies Llc Charge pump based over-sampling ADC for current detection
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9159406B2 (en) 2012-11-02 2015-10-13 Sandisk Technologies Inc. Single-level cell endurance improvement with pre-defined blocks
US8902669B2 (en) 2012-11-08 2014-12-02 SanDisk Technologies, Inc. Flash memory with data retention bias
US9025374B2 (en) 2012-12-13 2015-05-05 Sandisk Technologies Inc. System and method to update read voltages in a non-volatile memory in response to tracking data
US9064547B2 (en) 2013-03-05 2015-06-23 Sandisk 3D Llc 3D non-volatile memory having low-current cells and methods
US9165933B2 (en) 2013-03-07 2015-10-20 Sandisk 3D Llc Vertical bit line TFT decoder for high voltage operation
US9177663B2 (en) 2013-07-18 2015-11-03 Sandisk Technologies Inc. Dynamic regulation of memory array source line
US9105468B2 (en) 2013-09-06 2015-08-11 Sandisk 3D Llc Vertical bit line wide band gap TFT decoder
US9411721B2 (en) 2013-11-15 2016-08-09 Sandisk Technologies Llc Detecting access sequences for data compression on non-volatile memory devices
US9368224B2 (en) 2014-02-07 2016-06-14 SanDisk Technologies, Inc. Self-adjusting regulation current for memory array source line
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9123392B1 (en) 2014-03-28 2015-09-01 Sandisk 3D Llc Non-volatile 3D memory with cell-selectable word line decoding
US9437658B2 (en) 2014-08-05 2016-09-06 Sandisk Technologies Llc Fully isolated selector for memory device
US9208895B1 (en) 2014-08-14 2015-12-08 Sandisk Technologies Inc. Cell current control through power supply
US9349468B2 (en) 2014-08-25 2016-05-24 SanDisk Technologies, Inc. Operational amplifier methods for charging of sense amplifier internal nodes
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
FR3039921B1 (fr) * 2015-08-06 2018-02-16 Stmicroelectronics (Rousset) Sas Procede et systeme de controle d'une operation d'ecriture d'une donnee dans une cellule-memoire du type eeprom
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US9704920B2 (en) 2015-10-27 2017-07-11 Sandisk Technologies Llc Resistive random access memory containing a steering element and a tunneling dielectric element
US9812505B2 (en) 2015-11-16 2017-11-07 Sandisk Technologies Llc Non-volatile memory device containing oxygen-scavenging material portions and method of making thereof
US9698676B1 (en) 2016-03-11 2017-07-04 Sandisk Technologies Llc Charge pump based over-sampling with uniform step size for current detection
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US9805805B1 (en) 2016-08-23 2017-10-31 Sandisk Technologies Llc Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereof
CN108053858A (zh) * 2017-12-29 2018-05-18 珠海博雅科技有限公司 一种非易失性存储器的读取电路及读取方法
JP2020202002A (ja) 2019-06-11 2020-12-17 キオクシア株式会社 半導体記憶装置
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2828855C2 (de) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)
US4253059A (en) * 1979-05-14 1981-02-24 Fairchild Camera & Instrument Corp. EPROM Reliability test circuit
US4252059A (en) * 1979-09-10 1981-02-24 M.A.N.-Roland Druckmaschinen Aktiengesellschaft Bearing assembly for a cylinder in a printing press
US4417325A (en) * 1981-07-13 1983-11-22 Eliyahou Harari Highly scaleable dynamic ram cell with self-signal amplification
US4495602A (en) * 1981-12-28 1985-01-22 Mostek Corporation Multi-bit read only memory circuit
US4460982A (en) * 1982-05-20 1984-07-17 Intel Corporation Intelligent electrically programmable and electrically erasable ROM
US4488065A (en) * 1982-08-16 1984-12-11 Ncr Corporation Sensing and logic for multiple bit per cell ROM
JPS6180597A (ja) * 1984-09-26 1986-04-24 Hitachi Ltd 半導体記憶装置
JPS61151898A (ja) * 1984-12-26 1986-07-10 Fujitsu Ltd 半導体記憶装置におけるワ−ド線ドライバ回路
JPS61172300A (ja) * 1985-01-26 1986-08-02 Toshiba Corp 半導体記憶装置
DE3671670D1 (de) * 1985-03-26 1990-07-05 Siemens Ag Verfahren zum betreiben eines halbleiterspeichers mit integrierter paralleltestmoeglichkeit und auswerteschaltung zur durchfuehrung des verfahrens.
JPH051040Y2 (de) * 1985-04-09 1993-01-12
EP0198935A1 (de) * 1985-04-23 1986-10-29 Deutsche ITT Industries GmbH Elektrisch umprogrammierbarer Halbleiterspeicher mit Redundanz
JPS62114200A (ja) * 1985-11-13 1987-05-25 Mitsubishi Electric Corp 半導体メモリ装置
JPS62257699A (ja) * 1986-05-01 1987-11-10 Nippon Denso Co Ltd 多値記憶半導体回路
JPS6342097A (ja) * 1986-08-07 1988-02-23 Yukio Yasuda 多値論理記憶回路
IT1214246B (it) * 1987-05-27 1990-01-10 Sgs Microelettronica Spa Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.
US4809231A (en) * 1987-11-12 1989-02-28 Motorola, Inc. Method and apparatus for post-packaging testing of one-time programmable memories

Also Published As

Publication number Publication date
JPH04507320A (ja) 1992-12-17
US5172338A (en) 1992-12-15
DE69033927T2 (de) 2002-09-12
US5172338B1 (en) 1997-07-08
DE69030959D1 (de) 1997-07-24
EP0539358A1 (de) 1993-05-05
DE69033862D1 (de) 2001-12-20
EP0756287B1 (de) 2002-03-06
WO1990012400A1 (en) 1990-10-18
EP0778582A3 (de) 1998-11-18
DE69033023D1 (de) 1999-04-29
EP0778582A2 (de) 1997-06-11
EP0756287A3 (de) 1998-11-25
EP0774759B1 (de) 1999-03-24
DE69030959T2 (de) 1997-11-27
DE69033023T2 (de) 1999-09-02
EP0778582B1 (de) 2001-11-14
EP0774759A1 (de) 1997-05-21
EP0756287A2 (de) 1997-01-29
EP0539358B1 (de) 1997-06-18
DE69033927D1 (de) 2002-04-11
EP0539358A4 (de) 1995-01-11

Similar Documents

Publication Publication Date Title
DE69033862D1 (de) Effiziente parallele Programmierung von Datenblöcken in Multizustandsausführung
DE68927368D1 (de) ZNS-wirksame Stoffe
DE3854885T2 (de) Kombinieren von gelesenen Strichcode-Daten
DE68926446D1 (de) Elektronisches System zum Genehmigen von Dokumenten
DK336089D0 (da) Biarylforbindelser
DK225690A (da) Polygonformet hus
DE69024599T2 (de) Nachfüllen von Behandlungslösung
DE69321881D1 (de) Vorrichtung zum Lesen von Strichkoden
DE69320264D1 (de) Dekodieren von Seriendaten
ATA9388A (de) Hochlochziegel
DK355189A (da) Nye proteiner
DE68926753D1 (de) Einrichtung zur Wiederauffindung von Datenfolgen
DE69031324T2 (de) Inhaltsadressierbarer Speicher
DE69125675D1 (de) In situ-Herstellung von Diisopinocampheylchloroboran
DE69025996T2 (de) Nichtflüchtiger Zähler
DE69221861D1 (de) Sequenzierung von oligosacchariden
KR890017019U (ko) 지 갑
KR900003054U (ko) 철근 받침대
PT90917A (pt) Processo de granulacao
NO176107C (no) Akrylamidkopolymerer
BR8903535A (pt) Programador
BR6901817U (pt) Disposicao introduzida em oculos
BR6800623U (pt) Disposicao introduzida em xaxim sintetico
SE8801439D0 (sv) Kemidator
BR6901107U (pt) Disposicao introduzida em betoneira

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8310 Action for declaration of annulment
8313 Request for invalidation rejected/withdrawn
8328 Change in the person/name/address of the agent

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER

R082 Change of representative

Ref document number: 778582

Country of ref document: EP

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUS, DE