DE69104817T2 - Laservorrichtung zur Emission von einmodiger Strahlung mit geringer transversaler Divergenz. - Google Patents

Laservorrichtung zur Emission von einmodiger Strahlung mit geringer transversaler Divergenz.

Info

Publication number
DE69104817T2
DE69104817T2 DE69104817T DE69104817T DE69104817T2 DE 69104817 T2 DE69104817 T2 DE 69104817T2 DE 69104817 T DE69104817 T DE 69104817T DE 69104817 T DE69104817 T DE 69104817T DE 69104817 T2 DE69104817 T2 DE 69104817T2
Authority
DE
Germany
Prior art keywords
emission
laser device
mode radiation
low transverse
transverse divergence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69104817T
Other languages
English (en)
Other versions
DE69104817D1 (de
Inventor
Young-Kai Chen
Minghwei Hong
Ming-Chiang Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69104817D1 publication Critical patent/DE69104817D1/de
Application granted granted Critical
Publication of DE69104817T2 publication Critical patent/DE69104817T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69104817T 1990-12-20 1991-12-04 Laservorrichtung zur Emission von einmodiger Strahlung mit geringer transversaler Divergenz. Expired - Fee Related DE69104817T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/631,292 US5088099A (en) 1990-12-20 1990-12-20 Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence

Publications (2)

Publication Number Publication Date
DE69104817D1 DE69104817D1 (de) 1994-12-01
DE69104817T2 true DE69104817T2 (de) 1995-03-02

Family

ID=24530583

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69104817T Expired - Fee Related DE69104817T2 (de) 1990-12-20 1991-12-04 Laservorrichtung zur Emission von einmodiger Strahlung mit geringer transversaler Divergenz.

Country Status (4)

Country Link
US (1) US5088099A (de)
EP (1) EP0492854B1 (de)
JP (1) JP2959902B2 (de)
DE (1) DE69104817T2 (de)

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JP2961964B2 (ja) * 1991-07-10 1999-10-12 日本電気株式会社 半導体レーザ装置
US5164949A (en) * 1991-09-09 1992-11-17 Motorola, Inc. Vertical cavity surface emitting laser with lateral injection
US5256596A (en) * 1992-03-26 1993-10-26 Motorola, Inc. Top emitting VCSEL with implant
US5258316A (en) * 1992-03-26 1993-11-02 Motorola, Inc. Patterened mirror vertical cavity surface emitting laser
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes
JP3238783B2 (ja) * 1992-07-30 2001-12-17 シャープ株式会社 半導体レーザ素子
US5244749A (en) * 1992-08-03 1993-09-14 At&T Bell Laboratories Article comprising an epitaxial multilayer mirror
JP3207590B2 (ja) * 1993-03-15 2001-09-10 富士通株式会社 光半導体装置
US5383212A (en) * 1993-07-30 1995-01-17 At&T Corp. Free standing quantum well structure
US5376582A (en) * 1993-10-15 1994-12-27 International Business Machines Corporation Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement
JP3428797B2 (ja) * 1996-02-08 2003-07-22 古河電気工業株式会社 半導体レーザ素子
JPH09232692A (ja) * 1996-02-16 1997-09-05 Lucent Technol Inc 半導体レーザ装置
US5898721A (en) * 1997-02-14 1999-04-27 Opto Power Corporation InGaAsP/AlGaAs/GaAs hetero structure diode laser containing indium
US6088500A (en) * 1997-04-11 2000-07-11 Trw Inc. Expanded mode wave guide semiconductor modulation
KR100273134B1 (ko) * 1997-11-29 2001-01-15 정선종 단일모드표면방출레이저및그제조방법
US6141365A (en) 1997-12-31 2000-10-31 Lasertron Semiconductor laser with kink suppression layer
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
KR100319772B1 (ko) * 1999-12-02 2002-01-09 오길록 유기물 마이크로 공진 레이저
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
US6821027B2 (en) * 2000-10-16 2004-11-23 Opti Japan Corporation Miniaturized parallel optical transmitter and receiver module
US20040001521A1 (en) * 2002-06-27 2004-01-01 Ashish Tandon Laser having active region formed above substrate
US6913871B2 (en) * 2002-07-23 2005-07-05 Intel Corporation Fabricating sub-resolution structures in planar lightwave devices
JP2006511944A (ja) * 2002-12-20 2006-04-06 クリー　インコーポレイテッド 半導体メサ構造および導電性接合部を含む電子素子ならびに関連素子を形成する方法
EP1586148A4 (de) * 2003-01-24 2006-05-31 California Inst Of Techn TRAVERS-BRACK-RESONANZLASER UND VERSTûRKER UND VERFAHREN ZUDEREN BETRIEB
US7548567B2 (en) * 2004-04-02 2009-06-16 Vladimir Kupershmidt Analog transmitter using an external cavity laser (ECL)
JP4534763B2 (ja) * 2004-12-28 2010-09-01 豊田合成株式会社 半導体素子の製造方法
JP2008283096A (ja) * 2007-05-14 2008-11-20 Hitachi Cable Ltd 半導体発光素子
JP4883536B2 (ja) * 2008-11-06 2012-02-22 三洋電機株式会社 半導体レーザ素子および半導体レーザ装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2046005B (en) * 1979-03-29 1983-02-09 Standard Telephones Cables Ltd Injection laser devices
JPS61154191A (ja) * 1984-12-27 1986-07-12 Mitsubishi Electric Corp 半導体レ−ザ素子
JP2593845B2 (ja) * 1985-08-30 1997-03-26 ソニー株式会社 半導体発光装置
JPS6370471A (ja) * 1986-09-12 1988-03-30 Omron Tateisi Electronics Co 半導体レ−ザ
JPS63245984A (ja) * 1987-04-01 1988-10-13 Seiko Epson Corp 半導体発光素子及びその製造方法
US4822878A (en) * 1987-06-30 1989-04-18 Viomedics, Inc. Cyclic anhydride derivatives of chromophors
JPS6480089A (en) * 1987-09-21 1989-03-24 Seiko Epson Corp Semiconductor laser
JP2685801B2 (ja) * 1988-05-13 1997-12-03 株式会社東芝 半導体レーザ装置
JPH02131610A (ja) * 1988-11-11 1990-05-21 Murata Mfg Co Ltd エネルギー閉じ込め形多重モードフィルタ
US4908833A (en) * 1989-01-27 1990-03-13 American Telephone And Telegraph Company Distributed feedback laser for frequency modulated communication systems

Also Published As

Publication number Publication date
EP0492854B1 (de) 1994-10-26
DE69104817D1 (de) 1994-12-01
EP0492854A3 (en) 1992-11-19
JPH04276682A (ja) 1992-10-01
US5088099A (en) 1992-02-11
JP2959902B2 (ja) 1999-10-06
EP0492854A2 (de) 1992-07-01

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee