DE69107101T2 - Verfahren zum Herstellen eines Oxydfilms. - Google Patents

Verfahren zum Herstellen eines Oxydfilms.

Info

Publication number
DE69107101T2
DE69107101T2 DE69107101T DE69107101T DE69107101T2 DE 69107101 T2 DE69107101 T2 DE 69107101T2 DE 69107101 T DE69107101 T DE 69107101T DE 69107101 T DE69107101 T DE 69107101T DE 69107101 T2 DE69107101 T2 DE 69107101T2
Authority
DE
Germany
Prior art keywords
making
oxide film
oxide
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69107101T
Other languages
English (en)
Other versions
DE69107101D1 (de
Inventor
Shunpei Yamazaki
Hongyong Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2026824A external-priority patent/JP2585118B2/ja
Priority claimed from JP18127290A external-priority patent/JP2898365B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Application granted granted Critical
Publication of DE69107101D1 publication Critical patent/DE69107101D1/de
Publication of DE69107101T2 publication Critical patent/DE69107101T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31629—Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
DE69107101T 1990-02-06 1991-02-05 Verfahren zum Herstellen eines Oxydfilms. Expired - Fee Related DE69107101T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2026824A JP2585118B2 (ja) 1990-02-06 1990-02-06 薄膜トランジスタの作製方法
JP18127290A JP2898365B2 (ja) 1990-07-09 1990-07-09 絶縁ゲイト型電界効果トランジスタのゲイト絶縁膜の作製方法及び該作製方法で作製された絶縁ゲイト型電界効果トランジスタのゲイト絶縁膜

Publications (2)

Publication Number Publication Date
DE69107101D1 DE69107101D1 (de) 1995-03-16
DE69107101T2 true DE69107101T2 (de) 1995-05-24

Family

ID=26364662

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69107101T Expired - Fee Related DE69107101T2 (de) 1990-02-06 1991-02-05 Verfahren zum Herstellen eines Oxydfilms.

Country Status (4)

Country Link
US (3) US6586346B1 (de)
EP (1) EP0445535B1 (de)
KR (1) KR950010282B1 (de)
DE (1) DE69107101T2 (de)

Families Citing this family (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445535B1 (de) 1990-02-06 1995-02-01 Sel Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen eines Oxydfilms
DE69125323T2 (de) * 1990-07-24 1997-09-25 Semiconductor Energy Lab Verfahren zum Herstellen isolierender Filme, Kapazitäten und Halbleiteranordnungen
US7335570B1 (en) 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices
CN100483651C (zh) * 1992-08-27 2009-04-29 株式会社半导体能源研究所 半导体器件的制造方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US7465679B1 (en) 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
JP3637069B2 (ja) * 1993-03-12 2005-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP0905273B1 (de) * 1993-07-28 2002-10-16 Asahi Glass Company Ltd. Verfahren zur Herstellung von Schichten
US20010045794A1 (en) * 1996-01-19 2001-11-29 Alwan James J. Cap layer on glass panels for improving tip uniformity in cold cathode field emission technology
US6015759A (en) 1997-12-08 2000-01-18 Quester Technology, Inc. Surface modification of semiconductors using electromagnetic radiation
TW570876B (en) * 2001-05-11 2004-01-11 Toyo Seikan Kaisha Ltd Silicon oxide film
KR100425449B1 (ko) * 2001-05-18 2004-03-30 삼성전자주식회사 포토 화학기상증착법을 이용한 다층막 형성방법과 그 장치
US7015640B2 (en) * 2002-09-11 2006-03-21 General Electric Company Diffusion barrier coatings having graded compositions and devices incorporating the same
US7300829B2 (en) * 2003-06-02 2007-11-27 Applied Materials, Inc. Low temperature process for TFT fabrication
JP2005072264A (ja) * 2003-08-25 2005-03-17 Seiko Epson Corp トランジスタの製造方法、トランジスタ、回路基板、電気光学装置及び電子機器
US7294224B2 (en) * 2003-12-01 2007-11-13 Applied Materials, Inc. Magnet assembly for plasma containment
US20070202570A1 (en) * 2006-02-24 2007-08-30 Kikkoman Corporation Enzyme composition, low molecular weight hyaluronan and process for preparing the same
JP5354862B2 (ja) * 2007-02-19 2013-11-27 キヤノン株式会社 アモルファス絶縁体膜及び薄膜トランジスタ
JP4411331B2 (ja) * 2007-03-19 2010-02-10 信越化学工業株式会社 磁気記録媒体用シリコン基板およびその製造方法
JP2009093758A (ja) * 2007-10-10 2009-04-30 Shin Etsu Chem Co Ltd 磁気記録媒体用シリコン基板の製造方法および磁気記録媒体
DE112009000012B4 (de) * 2008-03-13 2014-11-13 Murata Manufacturing Co., Ltd. Glaskeramikzusammensetzung, Glaskeramik-Sinterkörper und keramisches Mehrschicht-Elektronikbauteil
US9666719B2 (en) * 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI495108B (zh) * 2008-07-31 2015-08-01 Semiconductor Energy Lab 半導體裝置的製造方法
TWI491048B (zh) * 2008-07-31 2015-07-01 Semiconductor Energy Lab 半導體裝置
TWI577027B (zh) * 2008-07-31 2017-04-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI500160B (zh) * 2008-08-08 2015-09-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5480554B2 (ja) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 半導体装置
JP5525778B2 (ja) 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 半導体装置
TWI606592B (zh) * 2008-09-01 2017-11-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
KR101644406B1 (ko) * 2008-09-12 2016-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101783193B1 (ko) 2008-09-12 2017-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
CN102160105B (zh) * 2008-09-19 2014-06-11 株式会社半导体能源研究所 显示装置及其制造方法
CN103545342B (zh) * 2008-09-19 2018-01-26 株式会社半导体能源研究所 半导体装置
KR101507324B1 (ko) 2008-09-19 2015-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN102160102B (zh) 2008-09-19 2013-11-06 株式会社半导体能源研究所 显示装置
KR102426826B1 (ko) 2008-09-19 2022-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN101714546B (zh) 2008-10-03 2014-05-14 株式会社半导体能源研究所 显示装置及其制造方法
EP2172804B1 (de) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Anzeigevorrichtung
KR20160113329A (ko) 2008-10-03 2016-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
KR101803720B1 (ko) 2008-10-03 2017-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
EP2172977A1 (de) * 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
JP5484853B2 (ja) * 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101799601B1 (ko) * 2008-10-16 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치
JP5361651B2 (ja) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101667909B1 (ko) * 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
EP2180518B1 (de) * 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Herstellungsverfahren für Halbleitervorrichtung
JP5616012B2 (ja) * 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
WO2010047288A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
US8741702B2 (en) * 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101310473B1 (ko) 2008-10-24 2013-09-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101634411B1 (ko) * 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
KR101631454B1 (ko) * 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
TWI633605B (zh) 2008-10-31 2018-08-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TW201921700A (zh) 2008-11-07 2019-06-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI467663B (zh) 2008-11-07 2015-01-01 Semiconductor Energy Lab 半導體裝置和該半導體裝置的製造方法
EP2184783B1 (de) 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Halbleiterbauelement und Verfahren zu seiner Herstellung
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
TWI535037B (zh) * 2008-11-07 2016-05-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI502739B (zh) 2008-11-13 2015-10-01 Semiconductor Energy Lab 半導體裝置及其製造方法
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
JP2010153802A (ja) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR102556313B1 (ko) 2008-11-21 2023-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI384532B (zh) * 2008-11-24 2013-02-01 Ind Tech Res Inst 具導通孔的電子元件及薄膜電晶體元件的製造方法
TWI585955B (zh) * 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 光感測器及顯示裝置
TWI508304B (zh) 2008-11-28 2015-11-11 Semiconductor Energy Lab 半導體裝置和其製造方法
KR101472771B1 (ko) * 2008-12-01 2014-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2010156960A (ja) 2008-12-03 2010-07-15 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP5615540B2 (ja) * 2008-12-19 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103456794B (zh) 2008-12-19 2016-08-10 株式会社半导体能源研究所 晶体管的制造方法
EP2515337B1 (de) 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Treiberschaltung und halbleiterbauelement
US8383470B2 (en) * 2008-12-25 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor (TFT) having a protective layer and manufacturing method thereof
US8114720B2 (en) * 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
TWI549198B (zh) 2008-12-26 2016-09-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101648927B1 (ko) * 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN101840936B (zh) * 2009-02-13 2014-10-08 株式会社半导体能源研究所 包括晶体管的半导体装置及其制造方法
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) * 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461582B2 (en) * 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
EP2406826B1 (de) 2009-03-12 2017-08-23 Semiconductor Energy Laboratory Co, Ltd. Herstellungsverfahren für halbleiterbauelement
TWI485781B (zh) * 2009-03-13 2015-05-21 Semiconductor Energy Lab 半導體裝置及該半導體裝置的製造方法
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
TWI485851B (zh) * 2009-03-30 2015-05-21 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI489628B (zh) 2009-04-02 2015-06-21 Semiconductor Energy Lab 半導體裝置和其製造方法
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2256795B1 (de) 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Herstellungsverfahren für Oxidhalbleiterbauelement
KR101476817B1 (ko) * 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
CN105070749B (zh) 2009-07-18 2019-08-09 株式会社半导体能源研究所 半导体装置以及制造半导体装置的方法
KR101782176B1 (ko) 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR102221207B1 (ko) 2009-09-04 2021-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR102157249B1 (ko) * 2009-09-16 2020-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101730347B1 (ko) 2009-09-16 2017-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
WO2011036993A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic appliance including the display device
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101903918B1 (ko) 2009-10-16 2018-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
CN104867982B (zh) * 2009-10-30 2018-08-03 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011077966A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011118510A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
JP2013084333A (ja) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd シフトレジスタ回路
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
TWI649606B (zh) 2013-06-05 2019-02-01 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
US20150017774A1 (en) * 2013-07-10 2015-01-15 Globalfoundries Inc. Method of forming fins with recess shapes
US10242617B2 (en) 2016-06-03 2019-03-26 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and driving method
GB201701846D0 (en) * 2017-02-03 2017-03-22 Univ Manchester Method of producing sputtered silicon oxide electrolyte
CN106847687A (zh) * 2017-02-04 2017-06-13 京东方科技集团股份有限公司 一种薄膜晶体管的制作方法、薄膜晶体管及显示装置

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6507670A (de) * 1964-06-30 1965-12-31
US3477936A (en) * 1967-06-29 1969-11-11 Ppg Industries Inc Sputtering of metals in an atmosphere of fluorine and oxygen
US3692571A (en) * 1970-11-12 1972-09-19 Northern Electric Co Method of reducing the mobile ion contamination in thermally grown silicon dioxide
JPS5749912B2 (de) * 1973-10-29 1982-10-25
US4027380A (en) * 1974-06-03 1977-06-07 Fairchild Camera And Instrument Corporation Complementary insulated gate field effect transistor structure and process for fabricating the structure
US4007294A (en) * 1974-06-06 1977-02-08 Rca Corporation Method of treating a layer of silicon dioxide
JPS5662328A (en) * 1979-10-26 1981-05-28 Agency Of Ind Science & Technol Manufacturing of insulation membrane and insulation membrane-semiconductor interface
US4470060A (en) * 1981-01-09 1984-09-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display with vertical non-single crystal semiconductor field effect transistors
US4489478A (en) * 1981-09-29 1984-12-25 Fujitsu Limited Process for producing a three-dimensional semiconductor device
GB2118774B (en) * 1982-02-25 1985-11-27 Sharp Kk Insulated gate thin film transistor
JPS6043869A (ja) 1983-08-19 1985-03-08 Semiconductor Energy Lab Co Ltd 半導体装置
JPS60160173A (ja) 1984-01-30 1985-08-21 Sharp Corp 薄膜トランジスタ
JPH0682839B2 (ja) * 1984-08-21 1994-10-19 セイコー電子工業株式会社 表示用パネルの製造方法
JPS6163020A (ja) 1984-09-04 1986-04-01 Agency Of Ind Science & Technol 薄膜形成方法
DE3682021D1 (de) 1985-10-23 1991-11-21 Hitachi Ltd Polysilizium-mos-transistor und verfahren zu seiner herstellung.
JPS62261128A (ja) * 1986-05-08 1987-11-13 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓ型半導体装置の製造方法
US4741964A (en) * 1986-07-17 1988-05-03 International Business Machines Corporation Structure containing hydrogenated amorphous silicon and process
US4810673A (en) 1986-09-18 1989-03-07 Texas Instruments Incorporated Oxide deposition method
US4748131A (en) * 1987-02-06 1988-05-31 The Aerospace Corporation Method for increasing radiation hardness of MOS gate oxides
JPH0687503B2 (ja) 1987-03-11 1994-11-02 株式会社日立製作所 薄膜半導体装置
JPH01149476A (ja) 1987-12-07 1989-06-12 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPH01238024A (ja) 1988-03-17 1989-09-22 Koujiyundo Kagaku Kenkyusho:Kk 半導体装置の酸化膜の製造法
US4849081A (en) * 1988-06-22 1989-07-18 The Boc Group, Inc. Formation of oxide films by reactive sputtering
US4894352A (en) 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
US5037766A (en) 1988-12-06 1991-08-06 Industrial Technology Research Institute Method of fabricating a thin film polysilicon thin film transistor or resistor
US5874766A (en) * 1988-12-20 1999-02-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an oxynitride film
JP2811762B2 (ja) 1989-07-04 1998-10-15 セイコーエプソン株式会社 絶縁ゲート型電界効果トランジスタの製造方法
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
JPH0393273A (ja) 1989-09-06 1991-04-18 Seiko Epson Corp 薄膜半導体装置の製造方法
EP0445535B1 (de) * 1990-02-06 1995-02-01 Sel Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen eines Oxydfilms
JP2960466B2 (ja) 1990-03-19 1999-10-06 株式会社日立製作所 半導体デバイスの配線絶縁膜の形成方法及びその装置
JP2917388B2 (ja) 1990-04-05 1999-07-12 セイコーエプソン株式会社 半導体装置の製造方法
EP0459763B1 (de) 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Dünnfilmtransistoren
JPH0824104B2 (ja) 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
JP2699695B2 (ja) 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
JPH05175132A (ja) 1991-12-20 1993-07-13 Kojundo Chem Lab Co Ltd 半導体装置のケイ素酸化膜の製造法
JPH05267480A (ja) 1992-03-21 1993-10-15 Ricoh Co Ltd 半導体装置とその製造方法
JP2536367B2 (ja) 1992-06-29 1996-09-18 日新電機株式会社 酸化シリコン膜の形成方法
JP3130660B2 (ja) 1992-07-27 2001-01-31 ティーディーケイ株式会社 薄膜トランジスタ及びその製造方法
TW226478B (en) 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
KR0143873B1 (ko) 1993-02-19 1998-08-17 순페이 야마자끼 절연막 및 반도체장치 및 반도체 장치 제조방법
GB2294848B (en) 1994-05-06 1998-11-18 Motorola Inc Call routing system for a wireless data device
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
US20040043628A1 (en) 2004-03-04
KR950010282B1 (ko) 1995-09-12
US6586346B1 (en) 2003-07-01
US20060011995A1 (en) 2006-01-19
EP0445535A2 (de) 1991-09-11
US7301211B2 (en) 2007-11-27
EP0445535A3 (en) 1991-09-18
US6960812B2 (en) 2005-11-01
DE69107101D1 (de) 1995-03-16
EP0445535B1 (de) 1995-02-01

Similar Documents

Publication Publication Date Title
DE69107101T2 (de) Verfahren zum Herstellen eines Oxydfilms.
DE69114373D1 (de) Verfahren zum Herstellen eines Siliziumnitrid-Filmes.
DE69115172D1 (de) Verfahren zum Herstellen eines kapazitiven isolierenden Films.
DE69111598T2 (de) Verfahren zum herstellen eines eingekapselten polymerischen transformators.
DE69114322D1 (de) Verfahren zum Herstellen eines PTC-Thermistors.
DE69727846D1 (de) Verfahren zum Herstellen eines isolierenden Zwischenfilms
DE69122962T2 (de) Intraokulare linse sowie verfahren zum herstellen derselben
DE3280391D1 (de) Verfahren zur herstellung eines ausdehnbaren sackes.
DE3482523D1 (de) Verfahren zum herstellen eines elektrets und anordnungen.
DE3776450D1 (de) Verfahren zum herstellen eines luftschall absorbierenden bauelements.
DE69106760D1 (de) Verfahren zum Herstellen eines Reibringes.
DE69108627T2 (de) Verfahren zum Herstellen eines amorphen, magnetischen Films.
DE69019521D1 (de) Verfahren zum Herstellen eines Plasmabildschirms.
DE69115118T2 (de) Verfahren zum Herstellen eines Dünnfilm-Transistors.
DE69127656T2 (de) Verfahren zum Herstellen von Dünnfilmtransistoren
DE3785683D1 (de) Verfahren zum herstellen eines polymerfilms.
DE3485171D1 (de) Verfahren zum anzeigen eines bildes.
DE3586019D1 (de) Verfahren zum herstellen eines elektrostriktiven elementes.
DE3889903D1 (de) Verfahren zur behandlung der verborgenen linien eines bildes.
DE69102380D1 (de) Verfahren zur Herstellung eines Elektrodenmusters.
DE69007286T2 (de) Verfahren zum fotografischen verfahren.
DE3854232D1 (de) Verfahren zum verbessern eines bildelements.
DE59006077D1 (de) Verfahren zur Begrenzung eines Schlupfes.
DE69107224T2 (de) Verfahren zur Desilylierung eines 4-Silyloxy-tetrahydro-pyran-2-ones.
DE69106084T2 (de) Verfahren zum Herstellen eines optischen Kompensators.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee