DE69109262T2 - GaAs Heterostruktur Metall-Isolator-Halbleiter integrierte Schaltung und deren Herstellungsmethode. - Google Patents
GaAs Heterostruktur Metall-Isolator-Halbleiter integrierte Schaltung und deren Herstellungsmethode.Info
- Publication number
- DE69109262T2 DE69109262T2 DE69109262T DE69109262T DE69109262T2 DE 69109262 T2 DE69109262 T2 DE 69109262T2 DE 69109262 T DE69109262 T DE 69109262T DE 69109262 T DE69109262 T DE 69109262T DE 69109262 T2 DE69109262 T2 DE 69109262T2
- Authority
- DE
- Germany
- Prior art keywords
- insulator
- manufacturing
- integrated circuit
- semiconductor integrated
- gaas heterostructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/636,321 US5124762A (en) | 1990-12-31 | 1990-12-31 | Gaas heterostructure metal-insulator-semiconductor integrated circuit technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69109262D1 DE69109262D1 (de) | 1995-06-01 |
| DE69109262T2 true DE69109262T2 (de) | 1995-09-28 |
Family
ID=24551379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69109262T Expired - Fee Related DE69109262T2 (de) | 1990-12-31 | 1991-12-27 | GaAs Heterostruktur Metall-Isolator-Halbleiter integrierte Schaltung und deren Herstellungsmethode. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5124762A (de) |
| EP (1) | EP0493797B1 (de) |
| JP (1) | JPH0555558A (de) |
| DE (1) | DE69109262T2 (de) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2786327B2 (ja) * | 1990-10-25 | 1998-08-13 | 三菱電機株式会社 | ヘテロ接合電界効果トランジスタ |
| US5334865A (en) * | 1991-07-31 | 1994-08-02 | Allied-Signal Inc. | MODFET structure for threshold control |
| US5351128A (en) * | 1991-08-02 | 1994-09-27 | Hitachi, Ltd. | Semiconductor device having reduced contact resistance between a channel or base layer and a contact layer |
| US5455183A (en) * | 1994-01-03 | 1995-10-03 | Honeywell Inc. | Method for fabricating a FET having a dielectrically isolated gate connect |
| US6208001B1 (en) | 1994-05-19 | 2001-03-27 | The United States Of America As Represented By The Secretary Of The Navy | Gallium arsenide semiconductor devices fabricated with insulator layer |
| WO1995032525A1 (en) * | 1994-05-19 | 1995-11-30 | The Government Of The United States Of America, Represented By The Secretary Of The Navy | BaF2/GaAs ELECTRONIC COMPONENTS |
| US5751030A (en) * | 1996-02-27 | 1998-05-12 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor |
| US5701020A (en) * | 1997-01-31 | 1997-12-23 | National Science Council | Pseudomorphic step-doped-channel field-effect transistor |
| US6359294B1 (en) * | 1997-03-04 | 2002-03-19 | Motorola, Inc. | Insulator-compound semiconductor interface structure |
| US6777759B1 (en) * | 1997-06-30 | 2004-08-17 | Intel Corporation | Device structure and method for reducing silicide encroachment |
| US6094295A (en) * | 1998-02-12 | 2000-07-25 | Motorola, Inc. | Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication |
| US6159834A (en) * | 1998-02-12 | 2000-12-12 | Motorola, Inc. | Method of forming a gate quality oxide-compound semiconductor structure |
| US5945718A (en) * | 1998-02-12 | 1999-08-31 | Motorola Inc. | Self-aligned metal-oxide-compound semiconductor device and method of fabrication |
| JP2000036591A (ja) * | 1998-07-21 | 2000-02-02 | Fujitsu Quantum Device Kk | 半導体装置 |
| US6188134B1 (en) | 1998-08-20 | 2001-02-13 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with rubidium barrier film and process for making same |
| US6720654B2 (en) | 1998-08-20 | 2004-04-13 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with cesium barrier film and process for making same |
| US6734558B2 (en) | 1998-08-20 | 2004-05-11 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with barium barrier film and process for making same |
| US6077775A (en) * | 1998-08-20 | 2000-06-20 | The United States Of America As Represented By The Secretary Of The Navy | Process for making a semiconductor device with barrier film formation using a metal halide and products thereof |
| US6144050A (en) * | 1998-08-20 | 2000-11-07 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with strontium barrier film and process for making same |
| US6351036B1 (en) | 1998-08-20 | 2002-02-26 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with a barrier film and process for making same |
| US6291876B1 (en) | 1998-08-20 | 2001-09-18 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with composite atomic barrier film and process for making same |
| SG85604A1 (en) * | 1998-11-06 | 2002-01-15 | Inst Materials Research & Eng | Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof |
| US6465887B1 (en) * | 2000-05-03 | 2002-10-15 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with diffusion barrier and process for making same |
| US6936900B1 (en) * | 2000-05-04 | 2005-08-30 | Osemi, Inc. | Integrated transistor devices |
| US6445015B1 (en) | 2000-05-04 | 2002-09-03 | Osemi, Incorporated | Metal sulfide semiconductor transistor devices |
| US6451711B1 (en) | 2000-05-04 | 2002-09-17 | Osemi, Incorporated | Epitaxial wafer apparatus |
| US6670651B1 (en) | 2000-05-04 | 2003-12-30 | Osemi, Inc. | Metal sulfide-oxide semiconductor transistor devices |
| US6821829B1 (en) | 2000-06-12 | 2004-11-23 | Freescale Semiconductor, Inc. | Method of manufacturing a semiconductor component and semiconductor component thereof |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| US6989556B2 (en) * | 2002-06-06 | 2006-01-24 | Osemi, Inc. | Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure |
| US7187045B2 (en) * | 2002-07-16 | 2007-03-06 | Osemi, Inc. | Junction field effect metal oxide compound semiconductor integrated transistor devices |
| US20070138506A1 (en) * | 2003-11-17 | 2007-06-21 | Braddock Walter D | Nitride metal oxide semiconductor integrated transistor devices |
| WO2005061756A1 (en) * | 2003-12-09 | 2005-07-07 | Osemi, Inc. | High temperature vacuum evaporation apparatus |
| EP1774620B1 (de) | 2004-06-23 | 2014-10-01 | Peregrine Semiconductor Corporation | Integriertes hf-front-end |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| WO2007044514A2 (en) * | 2005-10-07 | 2007-04-19 | Lee, Michael, J. | Method for improving refractive index control in pecvd deposited a-siny films |
| US20070138507A1 (en) * | 2005-12-16 | 2007-06-21 | Glass Elizabeth C | Method of fabricating reduced subthreshold leakage current submicron NFET's with high III/V ratio material |
| US9040398B2 (en) * | 2006-05-16 | 2015-05-26 | Cree, Inc. | Method of fabricating seminconductor devices including self aligned refractory contacts |
| US20080157073A1 (en) * | 2006-12-29 | 2008-07-03 | Walter David Braddock | Integrated Transistor Devices |
| FR2914500B1 (fr) * | 2007-03-30 | 2009-11-20 | Picogiga Internat | Dispositif electronique a contact ohmique ameliore |
| US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
| EP3346611B1 (de) | 2008-02-28 | 2021-09-22 | pSemi Corporation | Verfahren und vorrichtung für digitale abstimmung eines kondensators bei einer integrierten schaltung |
| US8723260B1 (en) | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| US8193523B2 (en) | 2009-12-30 | 2012-06-05 | Intel Corporation | Germanium-based quantum well devices |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
| US20150236748A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Devices and Methods for Duplexer Loss Reduction |
| US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
| RU2563545C1 (ru) * | 2014-06-27 | 2015-09-20 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") | Мощный полевой транзистор свч |
| RU2563319C1 (ru) * | 2014-07-02 | 2015-09-20 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") | Мощный полевой транзистор свч |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| RU2599275C1 (ru) * | 2015-06-04 | 2016-10-10 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина (АО "НПП "Исток" им. Шокина") | Мощный полевой транзистор свч на полупроводниковой гетероструктуре |
| US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
| TWI775065B (zh) * | 2020-04-13 | 2022-08-21 | 世界先進積體電路股份有限公司 | 半導體裝置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH084138B2 (ja) * | 1986-05-23 | 1996-01-17 | 日本電気株式会社 | 半導体装置 |
| FR2600821B1 (fr) * | 1986-06-30 | 1988-12-30 | Thomson Csf | Dispositif semi-conducteur a heterojonction et double canal, son application a un transistor a effet de champ, et son application a un dispositif de transductance negative |
| JPS63252478A (ja) * | 1987-04-09 | 1988-10-19 | Seiko Instr & Electronics Ltd | 絶縁ゲ−ト型半導体装置 |
-
1990
- 1990-12-31 US US07/636,321 patent/US5124762A/en not_active Expired - Lifetime
-
1991
- 1991-12-26 JP JP3356689A patent/JPH0555558A/ja active Pending
- 1991-12-27 DE DE69109262T patent/DE69109262T2/de not_active Expired - Fee Related
- 1991-12-27 EP EP91122243A patent/EP0493797B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0493797A3 (en) | 1993-03-17 |
| US5124762A (en) | 1992-06-23 |
| DE69109262D1 (de) | 1995-06-01 |
| JPH0555558A (ja) | 1993-03-05 |
| EP0493797B1 (de) | 1995-04-26 |
| EP0493797A2 (de) | 1992-07-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |