DE69110531T2 - Aktiv-Matrix-Anzeigevorrichtung mit Dünnfilmtransistorstruktur. - Google Patents

Aktiv-Matrix-Anzeigevorrichtung mit Dünnfilmtransistorstruktur.

Info

Publication number
DE69110531T2
DE69110531T2 DE69110531T DE69110531T DE69110531T2 DE 69110531 T2 DE69110531 T2 DE 69110531T2 DE 69110531 T DE69110531 T DE 69110531T DE 69110531 T DE69110531 T DE 69110531T DE 69110531 T2 DE69110531 T2 DE 69110531T2
Authority
DE
Germany
Prior art keywords
display device
thin film
film transistor
active matrix
matrix display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69110531T
Other languages
English (en)
Other versions
DE69110531D1 (de
Inventor
Mikio Katayama
Naofumi Kondo
Yuzuru Kanemori
Toshiaki Fujihara
Hiroshi Fujiki
Kiyoshi Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69110531D1 publication Critical patent/DE69110531D1/de
Application granted granted Critical
Publication of DE69110531T2 publication Critical patent/DE69110531T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
DE69110531T 1990-04-20 1991-04-22 Aktiv-Matrix-Anzeigevorrichtung mit Dünnfilmtransistorstruktur. Expired - Fee Related DE69110531T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10598290A JPH0830825B2 (ja) 1990-04-20 1990-04-20 アクティブマトリクス表示装置

Publications (2)

Publication Number Publication Date
DE69110531D1 DE69110531D1 (de) 1995-07-27
DE69110531T2 true DE69110531T2 (de) 1996-01-18

Family

ID=14421955

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69110531T Expired - Fee Related DE69110531T2 (de) 1990-04-20 1991-04-22 Aktiv-Matrix-Anzeigevorrichtung mit Dünnfilmtransistorstruktur.

Country Status (5)

Country Link
US (1) US5191451A (de)
EP (1) EP0453324B1 (de)
JP (1) JPH0830825B2 (de)
KR (1) KR940006989B1 (de)
DE (1) DE69110531T2 (de)

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JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
US5285302A (en) * 1992-03-30 1994-02-08 Industrial Technology Research Institute TFT matrix liquid crystal display with compensation capacitance plus TFT stray capacitance constant irrespective of mask misalignment during patterning
JP2823178B2 (ja) * 1992-04-06 1998-11-11 シャープ株式会社 金属配線基板及びその製造方法
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2814161B2 (ja) * 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
JP2635885B2 (ja) * 1992-06-09 1997-07-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜トランジスタ及びアクティブマトリクス液晶表示装置
EP0582387B1 (de) * 1992-08-05 1999-05-26 Sharp Kabushiki Kaisha Metallische Leiterplatte und Herstellungsverfahren dafür
US6094252A (en) * 1995-09-05 2000-07-25 Sharp Kabushiki Kaisha GH LCD having particular parameters and characteristics
KR100430798B1 (ko) * 1995-12-29 2004-07-19 삼성전자주식회사 액정표시장치용박막트랜지스터기판
KR100209620B1 (ko) * 1996-08-31 1999-07-15 구자홍 액정 표시 장치 및 그 제조방법
JP3036513B2 (ja) 1998-06-10 2000-04-24 日本電気株式会社 液晶表示装置
KR20010111265A (ko) 1999-12-24 2001-12-17 모리시타 요이찌 액정장치
KR100494702B1 (ko) * 2001-12-26 2005-06-13 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 액정표시장치
JP3872377B2 (ja) * 2002-04-30 2007-01-24 インターナショナル・ビジネス・マシーンズ・コーポレーション 画像表示素子および画像表示装置
KR100918180B1 (ko) * 2003-03-04 2009-09-22 삼성전자주식회사 쉬프트 레지스터
US7791679B2 (en) 2003-06-06 2010-09-07 Samsung Electronics Co., Ltd. Alternative thin film transistors for liquid crystal displays
US7187353B2 (en) * 2003-06-06 2007-03-06 Clairvoyante, Inc Dot inversion on novel display panel layouts with extra drivers
US7218301B2 (en) * 2003-06-06 2007-05-15 Clairvoyante, Inc System and method of performing dot inversion with standard drivers and backplane on novel display panel layouts
US7397455B2 (en) * 2003-06-06 2008-07-08 Samsung Electronics Co., Ltd. Liquid crystal display backplane layouts and addressing for non-standard subpixel arrangements
US8035599B2 (en) 2003-06-06 2011-10-11 Samsung Electronics Co., Ltd. Display panel having crossover connections effecting dot inversion
US20040246280A1 (en) * 2003-06-06 2004-12-09 Credelle Thomas Lloyd Image degradation correction in novel liquid crystal displays
US7209105B2 (en) * 2003-06-06 2007-04-24 Clairvoyante, Inc System and method for compensating for visual effects upon panels having fixed pattern noise with reduced quantization error
TWI226962B (en) * 2004-01-05 2005-01-21 Au Optronics Corp Liquid crystal display device with a capacitance-compensated structure
US7268758B2 (en) 2004-03-23 2007-09-11 Clairvoyante, Inc Transistor backplanes for liquid crystal displays comprising different sized subpixels
KR20060046241A (ko) * 2004-06-29 2006-05-17 엘지.필립스 엘시디 주식회사 액정표시소자
JP2008223775A (ja) * 2007-03-08 2008-09-25 Jtekt Corp 車輪支持装置
US8259228B2 (en) * 2007-12-10 2012-09-04 Ati Technologies Ulc Method and apparatus for high quality video motion adaptive edge-directional deinterlacing
CN102520555A (zh) * 2011-12-02 2012-06-27 深圳市华星光电技术有限公司 一种像素结构、阵列基板和液晶显示装置
TWI559046B (zh) * 2012-03-30 2016-11-21 友達光電股份有限公司 畫素陣列及顯示面板
CN102881249A (zh) * 2012-10-18 2013-01-16 深圳市华星光电技术有限公司 像素单元及主动矩阵式平面显示装置
TWI522716B (zh) 2013-05-10 2016-02-21 群創光電股份有限公司 薄膜電晶體基板及顯示裝置
CN107300816B (zh) * 2013-05-10 2021-04-16 群创光电股份有限公司 显示装置

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JPS59119390A (ja) * 1982-12-25 1984-07-10 株式会社東芝 薄膜トランジスタ回路
US4698627A (en) * 1984-04-25 1987-10-06 Energy Conversion Devices, Inc. Programmable semiconductor switch for a light influencing display and method for making same
US4775861A (en) * 1984-11-02 1988-10-04 Nec Corporation Driving circuit of a liquid crystal display panel which equivalently reduces picture defects
DE3581498D1 (de) * 1984-11-16 1991-02-28 Matsushita Electric Ind Co Ltd Aktive matrixschaltung fuer fluessigkristallanzeigen.
EP0189214B1 (de) * 1985-01-25 1997-07-23 Nec Corporation Aufbau eines Flüssigkristall-Mehrfarbenanzeigepaneels
FR2581783B1 (fr) * 1985-05-07 1989-05-12 Commissariat Energie Atomique Dispositif d'affichage a matrice active et a commande integree comprenant deux familles d'electrodes lignes et deux familles d'electrodes colonnes par point image et son procede de commande
FR2593632B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active et procedes de realisation de cet ecran
GB8604402D0 (en) * 1986-02-21 1986-03-26 Gen Electric Co Plc Liquid crystal displays
US4762398A (en) * 1987-01-26 1988-08-09 Hosiden Electronics Co., Ltd. Pixel transistor free of parasitic capacitance fluctuations from misalignment
JPS63186216A (ja) * 1987-01-28 1988-08-01 Nec Corp アクテイブマトリツクス液晶表示器
JPS63262621A (ja) * 1987-04-21 1988-10-28 Alps Electric Co Ltd 薄膜トランジスタアレイのトリミング方法
JPS63263743A (ja) * 1987-04-22 1988-10-31 Alps Electric Co Ltd 薄膜トランジスタアレイおよびその製法
JPH0193121A (ja) * 1987-10-05 1989-04-12 Kawasaki Steel Corp 半導体ウェハベーキング装置
JPH021823A (ja) * 1988-06-10 1990-01-08 Fujitsu Ltd アクティブマトリクス型液晶表示装置
US4917467A (en) * 1988-06-16 1990-04-17 Industrial Technology Research Institute Active matrix addressing arrangement for liquid crystal display
JPH0235493A (ja) * 1988-07-26 1990-02-06 Sony Corp ディスプレイ装置

Also Published As

Publication number Publication date
KR910018836A (ko) 1991-11-30
DE69110531D1 (de) 1995-07-27
EP0453324B1 (de) 1995-06-21
EP0453324A2 (de) 1991-10-23
US5191451A (en) 1993-03-02
EP0453324A3 (en) 1992-04-15
JPH0830825B2 (ja) 1996-03-27
KR940006989B1 (ko) 1994-08-03
JPH043124A (ja) 1992-01-08

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Legal Events

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8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee