DE69112123D1 - Verfahren zur Herstellung eines Anzeigeschirmes mit aktiver Matrix und Speicherkondensatoren sowie der durch dieses Verfahren hergestellte Schirm. - Google Patents

Verfahren zur Herstellung eines Anzeigeschirmes mit aktiver Matrix und Speicherkondensatoren sowie der durch dieses Verfahren hergestellte Schirm.

Info

Publication number
DE69112123D1
DE69112123D1 DE69112123T DE69112123T DE69112123D1 DE 69112123 D1 DE69112123 D1 DE 69112123D1 DE 69112123 T DE69112123 T DE 69112123T DE 69112123 T DE69112123 T DE 69112123T DE 69112123 D1 DE69112123 D1 DE 69112123D1
Authority
DE
Germany
Prior art keywords
producing
screen
active matrix
storage capacitors
display screen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69112123T
Other languages
English (en)
Other versions
DE69112123T2 (de
Inventor
Francois Morin
Contellec Michel Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Publication of DE69112123D1 publication Critical patent/DE69112123D1/de
Application granted granted Critical
Publication of DE69112123T2 publication Critical patent/DE69112123T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/014—Capacitor
DE69112123T 1990-05-15 1991-05-14 Verfahren zur Herstellung eines Anzeigeschirmes mit aktiver Matrix und Speicherkondensatoren sowie der durch dieses Verfahren hergestellte Schirm. Expired - Fee Related DE69112123T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9006042A FR2662290B1 (fr) 1990-05-15 1990-05-15 Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.

Publications (2)

Publication Number Publication Date
DE69112123D1 true DE69112123D1 (de) 1995-09-21
DE69112123T2 DE69112123T2 (de) 1996-04-04

Family

ID=9396617

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69112123T Expired - Fee Related DE69112123T2 (de) 1990-05-15 1991-05-14 Verfahren zur Herstellung eines Anzeigeschirmes mit aktiver Matrix und Speicherkondensatoren sowie der durch dieses Verfahren hergestellte Schirm.

Country Status (6)

Country Link
US (2) US5238861A (de)
EP (1) EP0457670B1 (de)
JP (1) JPH06347821A (de)
CA (1) CA2042427A1 (de)
DE (1) DE69112123T2 (de)
FR (1) FR2662290B1 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69022010T2 (de) * 1989-12-22 1996-04-18 Philips Electronics Nv Elektrooptische Anzeigevorrichtung mit aktiver Matrix und Speicherkondensatoren sowie Farbprojektionsapparat, der diese verwendet.
FR2662290B1 (fr) * 1990-05-15 1992-07-24 France Telecom Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.
FR2689287B1 (fr) * 1992-03-30 1997-01-03 France Telecom Ecran d'affichage a masque optique et procede de realisation de cet ecran.
TW226044B (de) * 1992-04-15 1994-07-01 Toshiba Co Ltd
FR2702882B1 (fr) * 1993-03-16 1995-07-28 Thomson Lcd Procédé de fabrication de transistors à couches minces étagés directs.
JP3164489B2 (ja) * 1994-06-15 2001-05-08 シャープ株式会社 液晶表示パネル
JP3081474B2 (ja) * 1994-11-11 2000-08-28 三洋電機株式会社 液晶表示装置
US5557534A (en) * 1995-01-03 1996-09-17 Xerox Corporation Forming array with metal scan lines to control semiconductor gate lines
US5600155A (en) * 1995-01-03 1997-02-04 Xerox Corporation Array with metal scan lines controlling semiconductor gate lines
JPH08320466A (ja) * 1995-03-17 1996-12-03 Sharp Corp アクティブマトリクス基板及びその欠陥修正方法
KR100303134B1 (ko) * 1995-05-09 2002-11-23 엘지.필립스 엘시디 주식회사 액정표시소자및그제조방법.
JP3792749B2 (ja) * 1995-06-02 2006-07-05 株式会社東芝 液晶表示装置
JP3688786B2 (ja) * 1995-07-24 2005-08-31 富士通ディスプレイテクノロジーズ株式会社 トランジスタマトリクス装置
US5737041A (en) * 1995-07-31 1998-04-07 Image Quest Technologies, Inc. TFT, method of making and matrix displays incorporating the TFT
KR100364771B1 (ko) * 1995-10-20 2003-04-07 엘지전자 주식회사 액정표시장치의구조및제조방법
US5712508A (en) * 1995-12-05 1998-01-27 Integrated Device Technology, Inc. Strapping via for interconnecting integrated circuit structures
KR100386203B1 (ko) * 1996-02-29 2003-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전기광학장치및그제조방법
KR100425855B1 (ko) 1996-06-21 2004-07-19 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법
JP3312101B2 (ja) * 1996-07-02 2002-08-05 シャープ株式会社 液晶表示装置
US6262438B1 (en) 1996-11-04 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Active matrix type display circuit and method of manufacturing the same
GB9626487D0 (en) * 1996-12-17 1997-02-05 Philips Electronics Nv Electronic devices and their manufacture
KR100228431B1 (ko) * 1996-12-30 1999-11-01 김영환 액정 표시 소자 및 그 제조방법
US7162510B2 (en) * 1998-03-16 2007-01-09 Schneider Automation Inc. Communication system for a control system over Ethernet and IP networks
US6704133B2 (en) 1998-03-18 2004-03-09 E-Ink Corporation Electro-optic display overlays and systems for addressing such displays
KR100322965B1 (ko) * 1998-03-27 2002-06-20 주식회사 현대 디스플레이 테크놀로지 액정표시소자의 제조방법
US7075502B1 (en) 1998-04-10 2006-07-11 E Ink Corporation Full color reflective display with multichromatic sub-pixels
CA2330950A1 (en) 1998-05-12 1999-11-18 E Ink Corporation Microencapsulated electrophoretic electrostatically-addressed media for drawing device applications
GB9817745D0 (en) 1998-08-15 1998-10-14 Philips Electronics Nv Manufacture of electronic devices comprising thin-film circuit elements
US6300987B1 (en) * 1998-12-04 2001-10-09 Samsung Electronics Co., Ltd. Thin film transistor array panels for liquid crystal displays
KR20000041955A (ko) * 1998-12-24 2000-07-15 김영환 박막 트랜지스터 액정표시소자
US7030412B1 (en) 1999-05-05 2006-04-18 E Ink Corporation Minimally-patterned semiconductor devices for display applications
US6819309B1 (en) * 1999-07-07 2004-11-16 Canon Kabushiki Kaisha Double-face display device
EP1196814A1 (de) * 1999-07-21 2002-04-17 E Ink Corporation Verwendung eines speicherkondensators zur verbesserung der leistung einer, von einer aktiven matrix gesteuerten elektronischen anzeige
US6683333B2 (en) 2000-07-14 2004-01-27 E Ink Corporation Fabrication of electronic circuit elements using unpatterned semiconductor layers
GB0017471D0 (en) * 2000-07-18 2000-08-30 Koninkl Philips Electronics Nv Thin film transistors and their manufacture
GB0112563D0 (en) * 2001-05-23 2001-07-18 Koninl Philips Electronics Nv Active plate
KR100469342B1 (ko) * 2001-07-11 2005-02-02 엘지.필립스 엘시디 주식회사 액정표시소자
US6967640B2 (en) 2001-07-27 2005-11-22 E Ink Corporation Microencapsulated electrophoretic display with integrated driver
GB0125019D0 (en) * 2001-10-18 2001-12-12 Koninkl Philips Electronics Nv Active matrix display device
US7202847B2 (en) 2002-06-28 2007-04-10 E Ink Corporation Voltage modulated driver circuits for electro-optic displays
US6900851B2 (en) 2002-02-08 2005-05-31 E Ink Corporation Electro-optic displays and optical systems for addressing such displays
US7223672B2 (en) 2002-04-24 2007-05-29 E Ink Corporation Processes for forming backplanes for electro-optic displays
US7190008B2 (en) 2002-04-24 2007-03-13 E Ink Corporation Electro-optic displays, and components for use therein
JP2005524110A (ja) * 2002-04-24 2005-08-11 イー−インク コーポレイション 電子表示装置
US6667215B2 (en) 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors
GB0216904D0 (en) * 2002-07-20 2002-08-28 Koninkl Philips Electronics Nv Active matrix liquid crystal display device
TW560001B (en) * 2002-10-22 2003-11-01 Toppoly Optoelectronics Corp Method of forming reflective liquid crystal display and driving circuit
WO2006098176A1 (ja) * 2005-03-15 2006-09-21 Sharp Kabushiki Kaisha アクティブマトリクス基板およびそれを備えた表示装置
US8169014B2 (en) * 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit
US7629206B2 (en) * 2007-02-26 2009-12-08 3M Innovative Properties Company Patterning self-aligned transistors using back surface illumination
US20080205010A1 (en) * 2007-02-26 2008-08-28 3M Innovative Properties Company Active matrix backplanes allowing relaxed alignment tolerance
CN101398532B (zh) * 2007-09-28 2010-09-29 群康科技(深圳)有限公司 电润湿显示器
CN102254534B (zh) 2011-08-05 2012-12-12 深圳市华星光电技术有限公司 提高薄膜晶体管像素充电能力的驱动电路及方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533072B1 (fr) * 1982-09-14 1986-07-18 Coissard Pierre Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs
JPS59119322A (ja) * 1982-12-27 1984-07-10 Seiko Epson Corp 液晶表示装置
JPS61100971A (ja) * 1984-10-23 1986-05-19 Fujitsu Ltd 薄膜トランジスタの製造方法
FR2579806B1 (fr) * 1985-03-26 1987-05-07 Morin Francois Procede de fabrication d'un ecran d'affichage a cristaux liquides et a reseau de diodes
JPH0740101B2 (ja) * 1985-04-23 1995-05-01 旭硝子株式会社 薄膜トランジスタ
JPS62166560A (ja) * 1986-01-18 1987-07-23 Sharp Corp 薄膜トランジスタ
FR2593631B1 (fr) * 1986-01-27 1989-02-17 Maurice Francois Ecran d'affichage a matrice active a resistance de grille et procedes de fabrication de cet ecran
FR2593632B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active et procedes de realisation de cet ecran
FR2593630B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active a resistance de drain et procedes de fabrication de cet ecran
JPH0640245B2 (ja) * 1986-02-28 1994-05-25 富士通株式会社 薄膜トランジスタマトリツクス回路
JPS62265688A (ja) * 1986-05-13 1987-11-18 松下電器産業株式会社 アクテイブマトリツクスアレイ
JPS62285464A (ja) * 1986-06-03 1987-12-11 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ基板及びその製造方法
US4762398A (en) * 1987-01-26 1988-08-09 Hosiden Electronics Co., Ltd. Pixel transistor free of parasitic capacitance fluctuations from misalignment
JPS63186216A (ja) * 1987-01-28 1988-08-01 Nec Corp アクテイブマトリツクス液晶表示器
JPS6473324A (en) * 1987-09-14 1989-03-17 Matsushita Electric Ind Co Ltd Display device and its driving method
JPH01137238A (ja) * 1987-11-25 1989-05-30 Matsushita Electric Ind Co Ltd アクティブマトリックスアレイ
JPH01217325A (ja) * 1988-02-25 1989-08-30 Sharp Corp 液晶表示装置
JPH01219824A (ja) * 1988-02-29 1989-09-01 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタアレイ基板
JP2655865B2 (ja) * 1988-03-16 1997-09-24 株式会社日立製作所 液晶表示装置の製造方法
JPH01267617A (ja) * 1988-04-20 1989-10-25 Seiko Epson Corp 薄膜トランジスタ
JPH0814669B2 (ja) * 1988-04-20 1996-02-14 シャープ株式会社 マトリクス型表示装置
JPH01277217A (ja) * 1988-04-28 1989-11-07 Nec Corp アクティブマトリックス型液晶表示素子アレイ
JPH028819A (ja) * 1988-06-28 1990-01-12 Citizen Watch Co Ltd アクティブマトリックス素子の製造方法
JP2628072B2 (ja) * 1988-07-22 1997-07-09 株式会社日立製作所 液晶表示装置およびその製造方法
JPH0816756B2 (ja) * 1988-08-10 1996-02-21 シャープ株式会社 透過型アクティブマトリクス液晶表示装置
JPH0259729A (ja) * 1988-08-25 1990-02-28 Toshiba Corp アクティブマトリクス型表示素子
JP2619011B2 (ja) * 1988-09-16 1997-06-11 株式会社東芝 液晶表示素子
US5162901A (en) * 1989-05-26 1992-11-10 Sharp Kabushiki Kaisha Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto
JPH03163529A (ja) * 1989-11-22 1991-07-15 Sharp Corp アクティブマトリクス表示装置
FR2662290B1 (fr) * 1990-05-15 1992-07-24 France Telecom Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.

Also Published As

Publication number Publication date
EP0457670A1 (de) 1991-11-21
FR2662290A1 (fr) 1991-11-22
FR2662290B1 (fr) 1992-07-24
CA2042427A1 (en) 1991-11-16
DE69112123T2 (de) 1996-04-04
US5394258A (en) 1995-02-28
JPH06347821A (ja) 1994-12-22
US5238861A (en) 1993-08-24
EP0457670B1 (de) 1995-08-16

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