DE69116218T2 - Aktive Matrix-Struktur für Flüssig-Kristall-Anzeigeelementen - Google Patents
Aktive Matrix-Struktur für Flüssig-Kristall-AnzeigeelementenInfo
- Publication number
- DE69116218T2 DE69116218T2 DE69116218T DE69116218T DE69116218T2 DE 69116218 T2 DE69116218 T2 DE 69116218T2 DE 69116218 T DE69116218 T DE 69116218T DE 69116218 T DE69116218 T DE 69116218T DE 69116218 T2 DE69116218 T2 DE 69116218T2
- Authority
- DE
- Germany
- Prior art keywords
- liquid crystal
- crystal display
- active matrix
- display elements
- matrix structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2124075A JP3046829B2 (ja) | 1990-05-16 | 1990-05-16 | モリブデン膜の形成方法 |
JP02124081A JP3112275B2 (ja) | 1990-05-16 | 1990-05-16 | 薄膜部品用配線材料 |
JP12408090A JP2813234B2 (ja) | 1990-05-16 | 1990-05-16 | 配線構造 |
JP12407690A JP2803759B2 (ja) | 1990-05-16 | 1990-05-16 | アクティブマトリクス構造およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69116218D1 DE69116218D1 (de) | 1996-02-22 |
DE69116218T2 true DE69116218T2 (de) | 1996-06-27 |
Family
ID=27471004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69116218T Expired - Fee Related DE69116218T2 (de) | 1990-05-16 | 1991-05-16 | Aktive Matrix-Struktur für Flüssig-Kristall-Anzeigeelementen |
Country Status (4)
Country | Link |
---|---|
US (1) | US5162933A (de) |
EP (1) | EP0457328B1 (de) |
KR (1) | KR950002943B1 (de) |
DE (1) | DE69116218T2 (de) |
Families Citing this family (134)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03125443A (ja) * | 1989-10-09 | 1991-05-28 | Sharp Corp | 実装基板の電極及び該実装基板の電極を有する液晶表示装置 |
JP2875363B2 (ja) | 1990-08-08 | 1999-03-31 | 株式会社日立製作所 | 液晶表示装置 |
US6713783B1 (en) * | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
EP0545327A1 (de) * | 1991-12-02 | 1993-06-09 | Matsushita Electric Industrial Co., Ltd. | Dünnschichttransistoranordnung für den Gebrauch in einer Flüssigkristallanzeige |
JP3392440B2 (ja) * | 1991-12-09 | 2003-03-31 | 株式会社東芝 | 多層導体層構造デバイス |
FR2689287B1 (fr) * | 1992-03-30 | 1997-01-03 | France Telecom | Ecran d'affichage a masque optique et procede de realisation de cet ecran. |
JP2907629B2 (ja) * | 1992-04-10 | 1999-06-21 | 松下電器産業株式会社 | 液晶表示パネル |
TW226044B (de) * | 1992-04-15 | 1994-07-01 | Toshiba Co Ltd | |
JP2760462B2 (ja) * | 1992-05-13 | 1998-05-28 | シャープ株式会社 | アクティブマトリクス基板 |
JP2924506B2 (ja) * | 1992-10-27 | 1999-07-26 | 日本電気株式会社 | アクティブマトリックス型液晶表示装置の画素構造 |
KR940015576A (ko) * | 1992-12-10 | 1994-07-21 | 이헌조 | 액정표시장치 제조방법 |
EP0673590B1 (de) * | 1992-12-14 | 1999-08-25 | United Technologies Corporation | Im sonnenlicht sichtbare elektrolumineszente dünn-schicht-vorrichtung mit geschwärzter metallelektrode |
US5539551A (en) * | 1992-12-28 | 1996-07-23 | Casio Computer Co., Ltd. | LCD TFT drain and source electrodes having ohmic barrier, primary conductor, and liquid impermeable layers and method of making |
JP3437863B2 (ja) * | 1993-01-18 | 2003-08-18 | 株式会社半導体エネルギー研究所 | Mis型半導体装置の作製方法 |
JPH07175084A (ja) * | 1993-12-21 | 1995-07-14 | Hitachi Ltd | 液晶表示装置及びその製造方法 |
JPH07199150A (ja) * | 1993-12-28 | 1995-08-04 | Canon Inc | 液晶表示装置 |
US5528082A (en) * | 1994-04-28 | 1996-06-18 | Xerox Corporation | Thin-film structure with tapered feature |
US5693983A (en) * | 1994-04-28 | 1997-12-02 | Xerox Corporation | Thin-film structure with conductive molybdenum-chromium line |
JPH07318978A (ja) * | 1994-05-20 | 1995-12-08 | Sony Corp | 表示素子用薄膜トランジスタアレイ |
JPH07321328A (ja) * | 1994-05-27 | 1995-12-08 | Hitachi Ltd | 薄膜トランジスタ駆動液晶表示装置およびその製法 |
US5691782A (en) * | 1994-07-08 | 1997-11-25 | Sanyo Electric Co., Ltd. | Liquid-crystal display with inter-line short-circuit preventive function and process for producing same |
JP3132310B2 (ja) * | 1994-11-18 | 2001-02-05 | 株式会社日立製作所 | アクティブマトリクス型液晶表示装置 |
JPH08201853A (ja) * | 1994-11-24 | 1996-08-09 | Toshiba Electron Eng Corp | 電極基板および平面表示装置 |
FR2732781B1 (fr) * | 1995-04-07 | 1997-06-20 | Thomson Lcd | Procede de fabrication de matrice active tft pour ecran de systeme de projection |
JPH08306926A (ja) * | 1995-05-07 | 1996-11-22 | Semiconductor Energy Lab Co Ltd | 液晶電気光学装置 |
JPH0926603A (ja) | 1995-05-08 | 1997-01-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP3315834B2 (ja) * | 1995-05-31 | 2002-08-19 | 富士通株式会社 | 薄膜トランジスタマトリクス装置及びその製造方法 |
JP3307181B2 (ja) * | 1995-07-31 | 2002-07-24 | ソニー株式会社 | 透過型表示装置 |
KR100338480B1 (ko) * | 1995-08-19 | 2003-01-24 | 엘지.필립스 엘시디 주식회사 | 액정표시장치및그제조방법 |
TW439003B (en) | 1995-11-17 | 2001-06-07 | Semiconductor Energy Lab | Display device |
DE69635239T2 (de) | 1995-11-21 | 2006-07-06 | Samsung Electronics Co., Ltd., Suwon | Verfahren zur Herstellung einer Flüssigkristall-Anzeige |
US5782665A (en) * | 1995-12-29 | 1998-07-21 | Xerox Corporation | Fabricating array with storage capacitor between cell electrode and dark matrix |
JP3625598B2 (ja) * | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JPH10133216A (ja) * | 1996-11-01 | 1998-05-22 | Hitachi Ltd | アクティブマトリクス型液晶表示装置 |
US6005648A (en) * | 1996-06-25 | 1999-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP3126661B2 (ja) * | 1996-06-25 | 2001-01-22 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP3634089B2 (ja) * | 1996-09-04 | 2005-03-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
KR100278561B1 (ko) * | 1996-10-15 | 2001-02-01 | 포만 제프리 엘 | 테이퍼를구비하며에칭성이감소된다층의금속샌드위치구조및그형성방법 |
US6081308A (en) * | 1996-11-21 | 2000-06-27 | Samsung Electronics Co., Ltd. | Method for manufacturing liquid crystal display |
KR100500682B1 (ko) * | 1996-11-28 | 2005-10-14 | 비오이 하이디스 테크놀로지 주식회사 | 액정표시소자및그제조방법 |
KR100229678B1 (ko) * | 1996-12-06 | 1999-11-15 | 구자홍 | 박막트랜지스터 및 그의 제조방법 |
KR100238795B1 (ko) * | 1997-03-03 | 2000-01-15 | 구본준 | 액정 표시 장치의 구조 및 그 액정 표시 장치의 제조 방법 |
KR100248123B1 (ko) | 1997-03-04 | 2000-03-15 | 구본준 | 박막트랜지스터및그의제조방법 |
US6335445B1 (en) * | 1997-03-24 | 2002-01-01 | Societe De Conseils De Recherches Et D'applications Scientifiques (S.C.R.A.S.) | Derivatives of 2-(iminomethyl)amino-phenyl, their preparation, their use as medicaments and the pharmaceutical compositions containing them |
US6465268B2 (en) | 1997-05-22 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing an electro-optical device |
JP2985124B2 (ja) * | 1997-06-12 | 1999-11-29 | 株式会社日立製作所 | 液晶表示装置 |
US5936292A (en) * | 1997-06-17 | 1999-08-10 | Nec Corporation | Structure of thin film transistor and gate terminal having a capacitive structure composed of the TFT elements |
KR100338008B1 (ko) * | 1997-11-20 | 2002-10-25 | 삼성전자 주식회사 | 질화 몰리브덴-금속 합금막과 그의 제조 방법, 액정표시장치용 배선과 그의 제조 방법 및 액정 표시 장치와 그의 제조방법 |
US6346175B1 (en) | 1997-11-20 | 2002-02-12 | International Business Machines Corporation | Modification of in-plate refractory metal texture by use of refractory metal/nitride layer |
KR100276442B1 (ko) * | 1998-02-20 | 2000-12-15 | 구본준 | 액정표시장치 제조방법 및 그 제조방법에 의한 액정표시장치 |
JP4663829B2 (ja) * | 1998-03-31 | 2011-04-06 | 三菱電機株式会社 | 薄膜トランジスタおよび該薄膜トランジスタを用いた液晶表示装置 |
US6653216B1 (en) * | 1998-06-08 | 2003-11-25 | Casio Computer Co., Ltd. | Transparent electrode forming apparatus and method of fabricating active matrix substrate |
KR100356452B1 (ko) * | 1998-10-02 | 2002-10-18 | 가부시키가이샤 히타치세이사쿠쇼 | 액정 표시 장치 및 그 제조 방법 |
JP4070896B2 (ja) * | 1998-10-07 | 2008-04-02 | 三菱電機株式会社 | 電気光学素子および該電気光学素子の製造方法 |
US6469317B1 (en) * | 1998-12-18 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6590229B1 (en) * | 1999-01-21 | 2003-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for production thereof |
JP3683463B2 (ja) * | 1999-03-11 | 2005-08-17 | シャープ株式会社 | アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ |
TWI255957B (en) * | 1999-03-26 | 2006-06-01 | Hitachi Ltd | Liquid crystal display device and method of manufacturing the same |
US6111619A (en) * | 1999-05-27 | 2000-08-29 | Sharp Laboratories Of America, Inc. | Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN interconnections for a liquid crystal display pixel array |
US6449026B1 (en) * | 1999-06-25 | 2002-09-10 | Hyundai Display Technology Inc. | Fringe field switching liquid crystal display and method for manufacturing the same |
JP3844913B2 (ja) * | 1999-06-28 | 2006-11-15 | アルプス電気株式会社 | アクティブマトリックス型液晶表示装置 |
JP3746925B2 (ja) * | 1999-08-27 | 2006-02-22 | セイコーエプソン株式会社 | 液晶装置および電子機器 |
KR100635940B1 (ko) * | 1999-10-29 | 2006-10-18 | 삼성전자주식회사 | 수직 배향형 액정 표시 장치 |
KR100660811B1 (ko) * | 1999-12-31 | 2006-12-26 | 엘지.필립스 엘시디 주식회사 | 액정 표시장치용 배선 형성방법 |
JP2001242483A (ja) * | 2000-02-25 | 2001-09-07 | Hitachi Ltd | 液晶表示装置及びその配線構造 |
JP3697173B2 (ja) * | 2000-05-25 | 2005-09-21 | セイコーエプソン株式会社 | 液晶装置および電子機器 |
TWI263336B (en) | 2000-06-12 | 2006-10-01 | Semiconductor Energy Lab | Thin film transistors and semiconductor device |
US6828587B2 (en) * | 2000-06-19 | 2004-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2002083974A (ja) * | 2000-06-19 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US6703265B2 (en) | 2000-08-02 | 2004-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US6720577B2 (en) * | 2000-09-06 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP2002090774A (ja) * | 2000-09-14 | 2002-03-27 | Hitachi Ltd | 液晶表示装置とその製造方法および装置 |
KR100587367B1 (ko) * | 2000-10-20 | 2006-06-08 | 엘지.필립스 엘시디 주식회사 | 횡전계방식 액정표시장치 및 그 제조방법 |
JP2002148659A (ja) * | 2000-11-10 | 2002-05-22 | Hitachi Ltd | 液晶表示装置 |
KR100697368B1 (ko) * | 2000-11-20 | 2007-03-20 | 비오이 하이디스 테크놀로지 주식회사 | 박막트랜지스터-액정표시패널의 제조방법 |
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KR100685953B1 (ko) * | 2002-08-20 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 배선의 형성방법 |
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US4859036A (en) * | 1987-05-15 | 1989-08-22 | Canon Kabushiki Kaisha | Device plate having conductive films selected to prevent pin-holes |
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-
1991
- 1991-05-10 US US07/697,991 patent/US5162933A/en not_active Expired - Lifetime
- 1991-05-16 DE DE69116218T patent/DE69116218T2/de not_active Expired - Fee Related
- 1991-05-16 EP EP91107967A patent/EP0457328B1/de not_active Expired - Lifetime
- 1991-05-16 KR KR1019910007935A patent/KR950002943B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0457328B1 (de) | 1996-01-10 |
KR950002943B1 (ko) | 1995-03-28 |
EP0457328A2 (de) | 1991-11-21 |
DE69116218D1 (de) | 1996-02-22 |
EP0457328A3 (en) | 1993-01-20 |
US5162933A (en) | 1992-11-10 |
KR910020473A (ko) | 1991-12-20 |
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