DE69118750T2 - Halbleiteranordnung mit einer Wärmesenke - Google Patents

Halbleiteranordnung mit einer Wärmesenke

Info

Publication number
DE69118750T2
DE69118750T2 DE69118750T DE69118750T DE69118750T2 DE 69118750 T2 DE69118750 T2 DE 69118750T2 DE 69118750 T DE69118750 T DE 69118750T DE 69118750 T DE69118750 T DE 69118750T DE 69118750 T2 DE69118750 T2 DE 69118750T2
Authority
DE
Germany
Prior art keywords
semiconductor device
heat sink
sink
heat
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69118750T
Other languages
English (en)
Other versions
DE69118750D1 (de
Inventor
Kimio Shigihara
Yutaka Nagai
Toshitaka Aoyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69118750D1 publication Critical patent/DE69118750D1/de
Application granted granted Critical
Publication of DE69118750T2 publication Critical patent/DE69118750T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484—Sapphire or diamond heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
DE69118750T 1990-06-05 1991-01-25 Halbleiteranordnung mit einer Wärmesenke Expired - Fee Related DE69118750T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2147761A JP2726141B2 (ja) 1990-06-05 1990-06-05 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69118750D1 DE69118750D1 (de) 1996-05-23
DE69118750T2 true DE69118750T2 (de) 1996-09-05

Family

ID=15437570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69118750T Expired - Fee Related DE69118750T2 (de) 1990-06-05 1991-01-25 Halbleiteranordnung mit einer Wärmesenke

Country Status (4)

Country Link
US (2) US5247203A (de)
EP (1) EP0460785B1 (de)
JP (1) JP2726141B2 (de)
DE (1) DE69118750T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04293287A (ja) * 1991-03-22 1992-10-16 Sanyo Electric Co Ltd 半導体レーザ装置
SG59997A1 (en) * 1995-06-07 1999-02-22 Ibm Apparatus and process for improved die adhesion to organic chip carries
US5792677A (en) * 1997-01-16 1998-08-11 Ford Motor Company Embedded metal planes for thermal management
US6084775A (en) * 1998-12-09 2000-07-04 International Business Machines Corporation Heatsink and package structures with fusible release layer
JP3429213B2 (ja) 1999-02-26 2003-07-22 シャープ株式会社 集積回路
US6273322B1 (en) * 1999-05-12 2001-08-14 Aichi Steel Corporation Productive method of amorphous metal-metal jointed parts and amorphous metal-metal jointed parts
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
JP4514376B2 (ja) * 2001-09-27 2010-07-28 シャープ株式会社 窒化物半導体レーザ装置
US6449158B1 (en) * 2001-12-20 2002-09-10 Motorola, Inc. Method and apparatus for securing an electronic power device to a heat spreader
US6749105B2 (en) * 2002-03-21 2004-06-15 Motorola, Inc. Method and apparatus for securing a metallic substrate to a metallic housing
JP4430112B2 (ja) * 2007-03-28 2010-03-10 古河電気工業株式会社 熱伝導膜、熱伝導膜を備える半導体デバイスおよび電子機器
US7816155B2 (en) * 2007-07-06 2010-10-19 Jds Uniphase Corporation Mounted semiconductor device and a method for making the same
EP2769408A1 (de) * 2011-10-20 2014-08-27 Crucible Intellectual Property, LLC Massenkühlkörper für amorphe legierungen
JP6116413B2 (ja) * 2013-07-09 2017-04-19 三菱電機株式会社 電力用半導体装置の製造方法
JP6912716B2 (ja) 2017-08-10 2021-08-04 富士通株式会社 半導体装置及びその製造方法
DE102018101453A1 (de) * 2018-01-23 2019-07-25 Borgwarner Ludwigsburg Gmbh Heizvorrichtung und Verfahren zum Herstellung eines Heizstabes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698662A (en) * 1985-02-05 1987-10-06 Gould Inc. Multichip thin film module
JPS628641U (de) * 1985-06-28 1987-01-19
GB2194388A (en) * 1986-08-20 1988-03-02 Plessey Co Plc Integrated circuit devices
EP0304337B1 (de) * 1987-08-20 1994-10-05 Canon Kabushiki Kaisha Hybrid-Substrat
JP2539878B2 (ja) * 1988-02-12 1996-10-02 三菱電機株式会社 レ―ザプリンタ用半導体レ―ザ装置の駆動方法
JPH0750813B2 (ja) * 1988-05-23 1995-05-31 三菱電機株式会社 半導体レーザ素子用サブマウント
US4861426A (en) * 1989-01-23 1989-08-29 The United States Of America As Represented By The Secretary Of The Army Method of making a millimeter wave monolithic integrated circuit
US5031029A (en) * 1990-04-04 1991-07-09 International Business Machines Corporation Copper device and use thereof with semiconductor devices

Also Published As

Publication number Publication date
JP2726141B2 (ja) 1998-03-11
EP0460785B1 (de) 1996-04-17
DE69118750D1 (de) 1996-05-23
EP0460785A1 (de) 1991-12-11
US5332695A (en) 1994-07-26
JPH0439956A (ja) 1992-02-10
US5247203A (en) 1993-09-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee