DE69119022T2 - Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung - Google Patents

Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung

Info

Publication number
DE69119022T2
DE69119022T2 DE69119022T DE69119022T DE69119022T2 DE 69119022 T2 DE69119022 T2 DE 69119022T2 DE 69119022 T DE69119022 T DE 69119022T DE 69119022 T DE69119022 T DE 69119022T DE 69119022 T2 DE69119022 T2 DE 69119022T2
Authority
DE
Germany
Prior art keywords
superconducting
production
oxidic
channel made
ultrathin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119022T
Other languages
English (en)
Other versions
DE69119022D1 (de
Inventor
Takao Nakamura
Hiroshi Inada
Michitomo Iiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2270070A external-priority patent/JP2641975B2/ja
Priority claimed from JP2287830A external-priority patent/JP2641976B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69119022D1 publication Critical patent/DE69119022D1/de
Application granted granted Critical
Publication of DE69119022T2 publication Critical patent/DE69119022T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/703—Microelectronic device with superconducting conduction line
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
DE69119022T 1990-10-08 1991-10-08 Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung Expired - Fee Related DE69119022T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2270070A JP2641975B2 (ja) 1990-10-08 1990-10-08 超電導素子および作製方法
JP2287830A JP2641976B2 (ja) 1990-10-25 1990-10-25 超電導素子および作製方法

Publications (2)

Publication Number Publication Date
DE69119022D1 DE69119022D1 (de) 1996-05-30
DE69119022T2 true DE69119022T2 (de) 1996-10-31

Family

ID=26549051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119022T Expired - Fee Related DE69119022T2 (de) 1990-10-08 1991-10-08 Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung

Country Status (4)

Country Link
US (2) US5236896A (de)
EP (1) EP0480814B1 (de)
CA (1) CA2052970C (de)
DE (1) DE69119022T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2051778C (en) * 1990-09-19 1997-05-06 Takao Nakamura Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
DE69115209T2 (de) * 1990-09-28 1996-08-08 Sumitomo Electric Industries Verfahren zur Herstellung eines Supraleitungsbauelements mit reduzierter Dicke der supraleitenden Oxidschicht und dadurch hergestelltes Supraleitungsbauelement.
EP0484248B1 (de) * 1990-10-31 1997-01-08 Sumitomo Electric Industries, Ltd. Supraleitende Schaltung und Verfahren zu ihrer Herstellung
CA2054795C (en) * 1990-11-01 1996-08-06 Hiroshi Inada Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
US5134117A (en) * 1991-01-22 1992-07-28 Biomagnetic Technologies, Inc. High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction
US5420101A (en) * 1991-06-24 1995-05-30 Forschungszentrum Julich Gmbh Structures super conductor tracks and process for making them
EP0534854B1 (de) * 1991-09-24 1997-12-03 Sumitomo Electric Industries, Ltd. Supraleitende Dünnschicht aus oxidisch supraleitendem Material, supraleitender Strompfad und supraleitende Einrichtung mit der supraleitenden Dünnschicht
JP2773487B2 (ja) * 1991-10-15 1998-07-09 日本電気株式会社 トンネルトランジスタ
WO1993010565A1 (en) * 1991-11-13 1993-05-27 Seiko Epson Corporation Superconductive element
DE69218348T2 (de) * 1991-11-30 1997-10-16 Sumitomo Electric Industries Supraleitendes Bauelement mit extrem dünnen supraleitenden Kanal und Herstellungsverfahren
CA2084983C (en) * 1991-12-10 1996-11-12 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
CA2085172C (en) * 1991-12-12 1996-07-23 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
JPH05251776A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導素子およびその作製方法
US5552374A (en) * 1992-04-09 1996-09-03 Sumitomo Electric Industries, Ltd. Oxide superconducting a transistor in crank-shaped configuration
JP2822773B2 (ja) * 1992-04-28 1998-11-11 住友電気工業株式会社 超電導インタフェース回路
EP0576363B1 (de) * 1992-06-24 1998-01-07 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung einer supraleitenden Einrichtung mit einem supraleitenden Kanal aus oxidisch supraleitendem Material
US5828079A (en) * 1992-06-29 1998-10-27 Matsushita Electric Industrial Co., Ltd. Field-effect type superconducting device including bi-base oxide compound containing copper
EP1544926A3 (de) * 1992-07-28 2005-07-20 Nippon Telegraph And Telephone Corporation Supraleitende Dünnschicht-Vorrichtung mit Mehrlagenverdrahtung aus supraleitenden Oxiden und Herstellungsverfahren
JPH0745880A (ja) * 1993-07-29 1995-02-14 Sumitomo Electric Ind Ltd 絶縁体薄膜と酸化物超電導薄膜との積層膜
KR0148596B1 (ko) * 1994-11-28 1998-10-15 양승택 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법
JPH08227743A (ja) * 1995-02-20 1996-09-03 Sumitomo Electric Ind Ltd 酸化物超電導体用金属電極
KR100194621B1 (ko) * 1995-12-21 1999-07-01 정선종 고온초전도 전계효과 소자 및 그 제조방법
US5994276A (en) * 1997-09-08 1999-11-30 Mcmaster University Composite high Tc superconductor film
US6660598B2 (en) * 2002-02-26 2003-12-09 International Business Machines Corporation Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region
JP2005056754A (ja) * 2003-08-06 2005-03-03 Sumitomo Electric Ind Ltd 超電導線材およびその製造方法
US7553704B2 (en) * 2005-06-28 2009-06-30 Freescale Semiconductor, Inc. Antifuse element and method of manufacture
US20070254402A1 (en) * 2006-04-27 2007-11-01 Robert Rotzoll Structure and fabrication of self-aligned high-performance organic fets
US9993364B2 (en) 2013-09-26 2018-06-12 3 West C, Llc Ostomy bag
US10238529B2 (en) 2013-09-26 2019-03-26 3 West C. LLC Ostomy bag
US11298257B2 (en) 2017-03-22 2022-04-12 3 West C, Llc. Ostomy apparatuses and related methods
DE102020112143B4 (de) 2020-05-05 2022-03-17 Lts Lohmann Therapie-Systeme Ag Nicotin - Corona

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751563A (en) * 1984-11-05 1988-06-14 International Business Machines, Corp. Microminiaturized electrical interconnection device and its method of fabrication
DE3850580T2 (de) * 1987-01-30 1994-10-27 Hitachi Ltd Supraleiteranordnung.
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
US5212150A (en) * 1987-05-06 1993-05-18 Semiconductor Energy Laboratory Co., Ltd. Oxide superconducting lead for interconnecting device component with a semiconductor substrate via at least one buffer layer
US5183800A (en) * 1987-07-15 1993-02-02 Sharp Kabushiki Kaisha Interconnection method for semiconductor device comprising a high-temperature superconductive material
EP0324044B1 (de) * 1988-01-15 1992-11-25 International Business Machines Corporation Feldeffektanordnung mit supraleitendem Kanal
US4878094A (en) * 1988-03-30 1989-10-31 Minko Balkanski Self-powered electronic component and manufacturing method therefor
JP2862137B2 (ja) * 1988-08-11 1999-02-24 古河電気工業株式会社 超電導トランジスタ
US5135908A (en) * 1989-08-07 1992-08-04 The Trustees Of Columbia University In The City Of New York Method of patterning superconducting films
JP2913785B2 (ja) * 1990-07-12 1999-06-28 富士通株式会社 半導体装置の製造方法
DE69115209T2 (de) * 1990-09-28 1996-08-08 Sumitomo Electric Industries Verfahren zur Herstellung eines Supraleitungsbauelements mit reduzierter Dicke der supraleitenden Oxidschicht und dadurch hergestelltes Supraleitungsbauelement.

Also Published As

Publication number Publication date
DE69119022D1 (de) 1996-05-30
CA2052970A1 (en) 1992-04-09
EP0480814A2 (de) 1992-04-15
EP0480814A3 (en) 1992-08-05
US5322526A (en) 1994-06-21
EP0480814B1 (de) 1996-04-24
US5236896A (en) 1993-08-17
CA2052970C (en) 1996-07-02

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