DE69119287D1 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE69119287D1
DE69119287D1 DE69119287T DE69119287T DE69119287D1 DE 69119287 D1 DE69119287 D1 DE 69119287D1 DE 69119287 T DE69119287 T DE 69119287T DE 69119287 T DE69119287 T DE 69119287T DE 69119287 D1 DE69119287 D1 DE 69119287D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119287T
Other languages
English (en)
Other versions
DE69119287T2 (de
Inventor
Kazuyoshi Muraoka
Masaru Koyanagi
Minoru Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE69119287D1 publication Critical patent/DE69119287D1/de
Application granted granted Critical
Publication of DE69119287T2 publication Critical patent/DE69119287T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
DE69119287T 1990-03-29 1991-03-28 Halbleiterspeicher Expired - Fee Related DE69119287T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2082078A JP2523925B2 (ja) 1990-03-29 1990-03-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69119287D1 true DE69119287D1 (de) 1996-06-13
DE69119287T2 DE69119287T2 (de) 1996-10-10

Family

ID=13764430

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119287T Expired - Fee Related DE69119287T2 (de) 1990-03-29 1991-03-28 Halbleiterspeicher

Country Status (5)

Country Link
US (1) US5270971A (de)
EP (1) EP0450516B1 (de)
JP (1) JP2523925B2 (de)
KR (1) KR950010620B1 (de)
DE (1) DE69119287T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04252493A (ja) * 1991-01-28 1992-09-08 Nec Corp 半導体記憶装置
JP3302734B2 (ja) * 1992-09-16 2002-07-15 株式会社東芝 半導体記憶装置
DE69333909T2 (de) 1992-11-12 2006-07-20 Promos Technologies, Inc. Leseverstärker mit lokalen Schreibtreibern
JP3028913B2 (ja) * 1994-11-10 2000-04-04 株式会社東芝 半導体記憶装置
US5499211A (en) * 1995-03-13 1996-03-12 International Business Machines Corporation Bit-line precharge current limiter for CMOS dynamic memories
KR0179848B1 (ko) * 1995-10-13 1999-04-15 문정환 전하를 재이용한 리프래쉬 방법
KR0157904B1 (ko) * 1995-10-18 1999-02-01 문정환 메모리의 센스 증폭회로
US5886938A (en) * 1996-10-31 1999-03-23 Texas Instruments Incorporated Semiconductor memory device having sense amplifiers with offset latch transistors and interleaved gate fingers
US6404019B1 (en) * 2000-09-29 2002-06-11 Infineon Technologies Ag Sense amplifier
US7870299B1 (en) * 2008-02-06 2011-01-11 Westinghouse Electric Co Llc Advanced logic system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333542A (en) * 1976-09-10 1978-03-29 Hitachi Ltd Signal detection circuit
JPS5817997B2 (ja) * 1978-03-31 1983-04-11 株式会社日立製作所 メモリシステム
US4195357A (en) * 1978-06-15 1980-03-25 Texas Instruments Incorporated Median spaced dummy cell layout for MOS random access memory
JPS60246092A (ja) * 1984-05-21 1985-12-05 Hitachi Ltd 半導体記憶装置
US4608670A (en) * 1984-08-02 1986-08-26 Texas Instruments Incorporated CMOS sense amplifier with N-channel sensing
US4627033A (en) * 1984-08-02 1986-12-02 Texas Instruments Incorporated Sense amplifier with reduced instantaneous power
JPS6168797A (ja) * 1984-09-11 1986-04-09 Nec Corp ダイナミックメモリ回路

Also Published As

Publication number Publication date
KR950010620B1 (ko) 1995-09-20
US5270971A (en) 1993-12-14
JPH03283087A (ja) 1991-12-13
EP0450516A3 (en) 1992-08-05
EP0450516A2 (de) 1991-10-09
JP2523925B2 (ja) 1996-08-14
DE69119287T2 (de) 1996-10-10
EP0450516B1 (de) 1996-05-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee