DE69120116D1 - Heterostruktur-Halbleiteranordnung - Google Patents

Heterostruktur-Halbleiteranordnung

Info

Publication number
DE69120116D1
DE69120116D1 DE69120116T DE69120116T DE69120116D1 DE 69120116 D1 DE69120116 D1 DE 69120116D1 DE 69120116 T DE69120116 T DE 69120116T DE 69120116 T DE69120116 T DE 69120116T DE 69120116 D1 DE69120116 D1 DE 69120116D1
Authority
DE
Germany
Prior art keywords
semiconductor device
heterostructure semiconductor
heterostructure
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120116T
Other languages
English (en)
Other versions
DE69120116T2 (de
Inventor
Takashi Eshita
Toshikazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69120116D1 publication Critical patent/DE69120116D1/de
Publication of DE69120116T2 publication Critical patent/DE69120116T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
DE69120116T 1990-03-15 1991-03-15 Heterostruktur-Halbleiteranordnung Expired - Fee Related DE69120116T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2065124A JP2817995B2 (ja) 1990-03-15 1990-03-15 ▲ｉｉｉ▼―▲ｖ▼族化合物半導体ヘテロ構造基板および▲ｉｉｉ▼―▲ｖ▼族化合物ヘテロ構造半導体装置

Publications (2)

Publication Number Publication Date
DE69120116D1 true DE69120116D1 (de) 1996-07-18
DE69120116T2 DE69120116T2 (de) 1996-10-24

Family

ID=13277814

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120116T Expired - Fee Related DE69120116T2 (de) 1990-03-15 1991-03-15 Heterostruktur-Halbleiteranordnung

Country Status (4)

Country Link
US (1) US5144379A (de)
EP (1) EP0447327B1 (de)
JP (1) JP2817995B2 (de)
DE (1) DE69120116T2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130269A (en) * 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
US5351128A (en) * 1991-08-02 1994-09-27 Hitachi, Ltd. Semiconductor device having reduced contact resistance between a channel or base layer and a contact layer
FR2689683B1 (fr) * 1992-04-07 1994-05-20 Thomson Composants Microondes Dispositif semiconducteur a transistors complementaires.
EP0603780B1 (de) * 1992-12-21 1998-04-29 Nippon Steel Corporation Verfahren zum Wachstum von Verbundhalbleitern auf einer Siliziumscheibe
JP3036404B2 (ja) * 1995-05-25 2000-04-24 株式会社村田製作所 半導体装置とその製造方法
US5621227A (en) * 1995-07-18 1997-04-15 Discovery Semiconductors, Inc. Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
US6423990B1 (en) 1997-09-29 2002-07-23 National Scientific Corporation Vertical heterojunction bipolar transistor
US5912481A (en) * 1997-09-29 1999-06-15 National Scientific Corp. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
US6380601B1 (en) 1999-03-29 2002-04-30 Hughes Electronics Corporation Multilayer semiconductor structure with phosphide-passivated germanium substrate
GB2351841A (en) * 1999-07-06 2001-01-10 Sharp Kk A semiconductor laser device
US6653706B1 (en) 2000-05-08 2003-11-25 The Board Of Trustees Of The Leland Stanford Junior University Low temperature grown optical detector
US6512369B2 (en) * 2001-05-22 2003-01-28 Delphi Technologies, Inc. Temperature compensated voltage divider with a magnetoresistor and a reference resistor
JP2003007976A (ja) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp 半導体装置及びモジュール装置
US6815790B2 (en) * 2003-01-10 2004-11-09 Rapiscan, Inc. Position sensing detector for the detection of light within two dimensions
US7279731B1 (en) * 2006-05-15 2007-10-09 Udt Sensors, Inc. Edge illuminated photodiodes
US7709921B2 (en) * 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US7880258B2 (en) * 2003-05-05 2011-02-01 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7256470B2 (en) * 2005-03-16 2007-08-14 Udt Sensors, Inc. Photodiode with controlled current leakage
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US8164151B2 (en) * 2007-05-07 2012-04-24 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode and method of manufacturing the same
US8120023B2 (en) * 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US8686529B2 (en) * 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7242069B2 (en) * 2003-05-05 2007-07-10 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US7655999B2 (en) * 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
JP2008527687A (ja) * 2004-12-30 2008-07-24 オーミック ソシエテ パール アクション サンプリフィエ エンハンスメント−デプレッション半導体構造及びその製造方法
JP2007149794A (ja) * 2005-11-25 2007-06-14 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US9006707B2 (en) * 2007-02-28 2015-04-14 Intel Corporation Forming arsenide-based complementary logic on a single substrate
US20100053802A1 (en) * 2008-08-27 2010-03-04 Masaki Yamashita Low Power Disk-Drive Motor Driver
US7687799B2 (en) * 2008-06-19 2010-03-30 Intel Corporation Methods of forming buffer layer architecture on silicon and structures formed thereby
EP2335288A4 (de) 2008-09-15 2013-07-17 Osi Optoelectronics Inc Fischgräten-fotodiode mit dünner aktiver schicht und flacher n+-schicht sowie herstellungsverfahren dafür
US8399909B2 (en) * 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
CN105424234A (zh) * 2015-12-01 2016-03-23 成都嘉石科技有限公司 一种压力传感器集成器件及其制作方法
DE102018108604A1 (de) * 2018-04-11 2019-10-17 Aixtron Se Nukleationsschicht-Abscheideverfahren
US20220376084A1 (en) * 2020-12-18 2022-11-24 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US20220199822A1 (en) 2020-12-18 2022-06-23 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4157556A (en) * 1977-01-06 1979-06-05 Varian Associates, Inc. Heterojunction confinement field effect transistor
JPS6012724A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 化合物半導体の成長方法
JPS61102069A (ja) * 1984-10-25 1986-05-20 Toshiba Corp 電界効果トランジスタ
EP0200933B1 (de) * 1985-04-05 1992-11-04 Nec Corporation Bipolare Eigenschaften aufweisender Transistor mit Heteroübergang
US4916498A (en) * 1985-09-15 1990-04-10 Trw Inc. High electron mobility power transistor
US4745448A (en) * 1985-12-24 1988-05-17 Raytheon Company Semiconductor devices having compensated buffer layers
JPH0783028B2 (ja) * 1986-06-02 1995-09-06 株式会社日立製作所 半導体装置及び製造方法
US4827320A (en) * 1986-09-19 1989-05-02 University Of Illinois Semiconductor device with strained InGaAs layer
JPH0682691B2 (ja) * 1987-11-12 1994-10-19 松下電器産業株式会社 電界効果型トランジスタ
US4987463A (en) * 1989-08-28 1991-01-22 Motorola, Inc. FET having a high trap concentration interface layer

Also Published As

Publication number Publication date
DE69120116T2 (de) 1996-10-24
JPH03266439A (ja) 1991-11-27
EP0447327A3 (en) 1992-01-15
EP0447327A2 (de) 1991-09-18
EP0447327B1 (de) 1996-06-12
US5144379A (en) 1992-09-01
JP2817995B2 (ja) 1998-10-30

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee