DE69120614D1 - Elektrophotonische Vorrichtung mit vertikalem Resonator vom "vertical to surface" Übertragungstyp - Google Patents

Elektrophotonische Vorrichtung mit vertikalem Resonator vom "vertical to surface" Übertragungstyp

Info

Publication number
DE69120614D1
DE69120614D1 DE69120614T DE69120614T DE69120614D1 DE 69120614 D1 DE69120614 D1 DE 69120614D1 DE 69120614 T DE69120614 T DE 69120614T DE 69120614 T DE69120614 T DE 69120614T DE 69120614 D1 DE69120614 D1 DE 69120614D1
Authority
DE
Germany
Prior art keywords
vertical
transmission type
resonator
electrophotonic
electrophotonic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69120614T
Other languages
English (en)
Other versions
DE69120614T2 (de
Inventor
Hideo Kasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69120614D1 publication Critical patent/DE69120614D1/de
Publication of DE69120614T2 publication Critical patent/DE69120614T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
DE69120614T 1990-08-20 1991-08-20 Elektrophotonische Vorrichtung mit vertikalem Resonator vom "vertical to surface" Übertragungstyp Expired - Lifetime DE69120614T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21883390A JP2596195B2 (ja) 1990-08-20 1990-08-20 垂直共振器型面入出力光電融合素子

Publications (2)

Publication Number Publication Date
DE69120614D1 true DE69120614D1 (de) 1996-08-08
DE69120614T2 DE69120614T2 (de) 1997-02-20

Family

ID=16726058

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120614T Expired - Lifetime DE69120614T2 (de) 1990-08-20 1991-08-20 Elektrophotonische Vorrichtung mit vertikalem Resonator vom "vertical to surface" Übertragungstyp

Country Status (5)

Country Link
US (1) US5229627A (de)
EP (1) EP0474018B1 (de)
JP (1) JP2596195B2 (de)
CA (1) CA2049448C (de)
DE (1) DE69120614T2 (de)

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Publication number Priority date Publication date Assignee Title
US5525828A (en) * 1991-10-31 1996-06-11 International Business Machines Corporation High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields
JP2874442B2 (ja) * 1992-04-10 1999-03-24 日本電気株式会社 面入出力光電融合素子
JPH0669585A (ja) * 1992-08-12 1994-03-11 Fujitsu Ltd 面発光半導体レーザ及びその製造方法
JPH0793419B2 (ja) * 1992-11-04 1995-10-09 日本電気株式会社 受光発光集積素子
US5362977A (en) * 1992-12-28 1994-11-08 At&T Bell Laboratories Single mirror light-emitting diodes with enhanced intensity
US5389797A (en) * 1993-02-24 1995-02-14 The United States Of America As Represented By The Secretary Of The Department Of Energy Photodetector with absorbing region having resonant periodic absorption between reflectors
JP3207590B2 (ja) * 1993-03-15 2001-09-10 富士通株式会社 光半導体装置
US5315128A (en) * 1993-04-30 1994-05-24 At&T Bell Laboratories Photodetector with a resonant cavity
US5498863A (en) * 1993-04-30 1996-03-12 At&T Corp. Wavelength-sensitive detectors based on absorbers in standing waves
KR0147589B1 (ko) * 1994-05-31 1998-10-15 김광호 수직공진기 면발광 레이저 다이오드를 이용한 광픽엎
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
US5701327A (en) * 1996-04-30 1997-12-23 Lucent Technologies Inc. Saturable Bragg reflector structure and process for fabricating the same
US5828088A (en) * 1996-09-05 1998-10-27 Astropower, Inc. Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes
US6603784B1 (en) * 1998-12-21 2003-08-05 Honeywell International Inc. Mechanical stabilization of lattice mismatched quantum wells
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6384462B1 (en) * 2000-12-06 2002-05-07 Nova Crystals, Inc. Planar hetero-interface photodetector
US6826219B2 (en) * 2002-03-14 2004-11-30 Gigatera Ag Semiconductor saturable absorber device, and laser
KR100576718B1 (ko) * 2003-12-24 2006-05-03 한국전자통신연구원 실리콘 발광 소자
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN101432936B (zh) 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7545560B2 (en) * 2004-10-08 2009-06-09 Finisar Corporation AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector
TWI373851B (en) * 2008-11-25 2012-10-01 Nexpower Technology Corp Stacked-layered thin film solar cell and manufacturing method thereof
KR102496476B1 (ko) * 2015-11-19 2023-02-06 삼성전자주식회사 전자기파 반사체 및 이를 포함하는 광학소자
KR20180065060A (ko) 2016-12-06 2018-06-18 삼성디스플레이 주식회사 유기발광 표시장치
CN112736644B (zh) * 2021-03-30 2021-06-11 南昌凯捷半导体科技有限公司 一种用于车载雷达的高功率vcsel及其制备方法

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JPH0738457B2 (ja) * 1986-07-18 1995-04-26 株式会社東芝 光・電子双安定素子
US5028969A (en) * 1988-09-13 1991-07-02 Nec Corporation Semiconductor device for a space modulation matrix and method for driving a space modulation matrix
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
US5012486A (en) * 1990-04-06 1991-04-30 At&T Bell Laboratories Vertical cavity semiconductor laser with lattice-mismatched mirror stack

Also Published As

Publication number Publication date
DE69120614T2 (de) 1997-02-20
EP0474018B1 (de) 1996-07-03
CA2049448C (en) 1994-07-26
EP0474018A2 (de) 1992-03-11
CA2049448A1 (en) 1992-02-21
US5229627A (en) 1993-07-20
EP0474018A3 (en) 1992-05-13
JPH04101483A (ja) 1992-04-02
JP2596195B2 (ja) 1997-04-02

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