DE69121657T2 - Halbleiterspeicheranordnung mit einem Absenktransistor für externes Signal - Google Patents

Halbleiterspeicheranordnung mit einem Absenktransistor für externes Signal

Info

Publication number
DE69121657T2
DE69121657T2 DE69121657T DE69121657T DE69121657T2 DE 69121657 T2 DE69121657 T2 DE 69121657T2 DE 69121657 T DE69121657 T DE 69121657T DE 69121657 T DE69121657 T DE 69121657T DE 69121657 T2 DE69121657 T2 DE 69121657T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
external signal
down transistor
memory arrangement
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69121657T
Other languages
English (en)
Other versions
DE69121657D1 (de
Inventor
Tadahiko Sugibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69121657D1 publication Critical patent/DE69121657D1/de
Application granted granted Critical
Publication of DE69121657T2 publication Critical patent/DE69121657T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE69121657T 1990-09-13 1991-09-13 Halbleiterspeicheranordnung mit einem Absenktransistor für externes Signal Expired - Lifetime DE69121657T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2243085A JPH04123388A (ja) 1990-09-13 1990-09-13 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69121657D1 DE69121657D1 (de) 1996-10-02
DE69121657T2 true DE69121657T2 (de) 1997-02-06

Family

ID=17098561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69121657T Expired - Lifetime DE69121657T2 (de) 1990-09-13 1991-09-13 Halbleiterspeicheranordnung mit einem Absenktransistor für externes Signal

Country Status (5)

Country Link
US (1) US5285412A (de)
EP (1) EP0475448B1 (de)
JP (1) JPH04123388A (de)
KR (1) KR950006420B1 (de)
DE (1) DE69121657T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5757712A (en) * 1996-07-12 1998-05-26 International Business Machines Corporation Memory modules with voltage regulation and level translation
JP3804633B2 (ja) * 2003-05-28 2006-08-02 セイコーエプソン株式会社 半導体集積回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216390A (en) * 1978-10-04 1980-08-05 Rca Corporation Level shift circuit
US4482985A (en) * 1981-04-17 1984-11-13 Hitachi, Ltd. Semiconductor integrated circuit
JPS5990292A (ja) * 1982-11-12 1984-05-24 Toshiba Corp 電圧変換回路
JPS6052112A (ja) * 1983-08-31 1985-03-25 Toshiba Corp 論理回路
NL8702800A (nl) * 1987-11-23 1989-06-16 Philips Nv Geintegreerde geheugenschakeling met interne voedingsspanningsregeling.
US4820941A (en) * 1988-02-01 1989-04-11 Texas Instruments Incorporated Decoder driver circuit for programming high-capacitance lines
JP2585348B2 (ja) * 1988-02-22 1997-02-26 株式会社東芝 不揮発性半導体記憶装置
JPH02246516A (ja) * 1989-03-20 1990-10-02 Hitachi Ltd 半導体装置
US5084637A (en) * 1989-05-30 1992-01-28 International Business Machines Corp. Bidirectional level shifting interface circuit

Also Published As

Publication number Publication date
EP0475448B1 (de) 1996-08-28
KR920007172A (ko) 1992-04-28
DE69121657D1 (de) 1996-10-02
JPH04123388A (ja) 1992-04-23
KR950006420B1 (ko) 1995-06-15
EP0475448A2 (de) 1992-03-18
EP0475448A3 (en) 1992-10-14
US5285412A (en) 1994-02-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: ELPIDA MEMORY, INC., TOKYO, JP