DE69123422T2 - Halbleiteranordnung mit ferroelektrischem material und verfahren zu deren herstellung - Google Patents

Halbleiteranordnung mit ferroelektrischem material und verfahren zu deren herstellung

Info

Publication number
DE69123422T2
DE69123422T2 DE69123422T DE69123422T DE69123422T2 DE 69123422 T2 DE69123422 T2 DE 69123422T2 DE 69123422 T DE69123422 T DE 69123422T DE 69123422 T DE69123422 T DE 69123422T DE 69123422 T2 DE69123422 T2 DE 69123422T2
Authority
DE
Germany
Prior art keywords
production
ferroelectric material
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123422T
Other languages
English (en)
Other versions
DE69123422D1 (de
Inventor
Kazuhiro Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramtron International Corp
Original Assignee
Ramtron International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramtron International Corp filed Critical Ramtron International Corp
Application granted granted Critical
Publication of DE69123422D1 publication Critical patent/DE69123422D1/de
Publication of DE69123422T2 publication Critical patent/DE69123422T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
DE69123422T 1990-04-24 1991-04-23 Halbleiteranordnung mit ferroelektrischem material und verfahren zu deren herstellung Expired - Fee Related DE69123422T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP10801190 1990-04-24
JP10801290 1990-04-24
JP10801390 1990-04-24
PCT/JP1991/000539 WO1991016731A1 (en) 1990-04-24 1991-04-23 Semiconductor device having ferroelectric material and method of producing the same

Publications (2)

Publication Number Publication Date
DE69123422D1 DE69123422D1 (de) 1997-01-16
DE69123422T2 true DE69123422T2 (de) 1997-06-05

Family

ID=27311120

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123422T Expired - Fee Related DE69123422T2 (de) 1990-04-24 1991-04-23 Halbleiteranordnung mit ferroelektrischem material und verfahren zu deren herstellung

Country Status (5)

Country Link
US (1) US5293510A (de)
EP (1) EP0478799B1 (de)
KR (1) KR100349999B1 (de)
DE (1) DE69123422T2 (de)
WO (1) WO1991016731A1 (de)

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JP2788835B2 (ja) * 1993-03-17 1998-08-20 日本電気株式会社 薄膜キャパシタおよびその製造方法
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US5381302A (en) * 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
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KR100363068B1 (ko) * 1995-12-26 2003-02-20 텔코디아 테크놀로지스, 인코포레이티드 실리콘에집적된강유전커패시터및그제조방법
US5798903A (en) * 1995-12-26 1998-08-25 Bell Communications Research, Inc. Electrode structure for ferroelectric capacitor integrated on silicon
US5920453A (en) * 1996-08-20 1999-07-06 Ramtron International Corporation Completely encapsulated top electrode of a ferroelectric capacitor
JP3512959B2 (ja) 1996-11-14 2004-03-31 株式会社東芝 半導体装置及びその製造方法
US5807774A (en) * 1996-12-06 1998-09-15 Sharp Kabushiki Kaisha Simple method of fabricating ferroelectric capacitors
US6011284A (en) * 1996-12-26 2000-01-04 Sony Corporation Electronic material, its manufacturing method, dielectric capacitor, nonvolatile memory and semiconductor device
JP3047850B2 (ja) * 1997-03-31 2000-06-05 日本電気株式会社 半導体装置
JP3201468B2 (ja) * 1997-05-26 2001-08-20 日本電気株式会社 容量素子及びその製造方法
US6027860A (en) * 1997-08-13 2000-02-22 Micron Technology, Inc. Method for forming a structure using redeposition of etchable layer
US5910880A (en) 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
DE19743268C2 (de) * 1997-09-30 2003-07-03 Infineon Technologies Ag Kondensator mit einer Barriereschicht aus einem Übergangsmetall-Phosphid, -Arsenid oder -Sulfid, Herstellungsverfahren für einen solchen Kondensator sowie Halbleiterspeicheranordnung mit einem solchen Kondensator
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US6162744A (en) * 1998-02-28 2000-12-19 Micron Technology, Inc. Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers
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US6730559B2 (en) 1998-04-10 2004-05-04 Micron Technology, Inc. Capacitors and methods of forming capacitors
US5972722A (en) * 1998-04-14 1999-10-26 Texas Instruments Incorporated Adhesion promoting sacrificial etch stop layer in advanced capacitor structures
US6165834A (en) * 1998-05-07 2000-12-26 Micron Technology, Inc. Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
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US6124164A (en) 1998-09-17 2000-09-26 Micron Technology, Inc. Method of making integrated capacitor incorporating high K dielectric
US6174735B1 (en) * 1998-10-23 2001-01-16 Ramtron International Corporation Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation
US6048740A (en) * 1998-11-05 2000-04-11 Sharp Laboratories Of America, Inc. Ferroelectric nonvolatile transistor and method of making same
US6750500B1 (en) 1999-01-05 2004-06-15 Micron Technology, Inc. Capacitor electrode for integrating high K materials
US6255157B1 (en) 1999-01-27 2001-07-03 International Business Machines Corporation Method for forming a ferroelectric capacitor under the bit line
US6194754B1 (en) * 1999-03-05 2001-02-27 Telcordia Technologies, Inc. Amorphous barrier layer in a ferroelectric memory cell
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Also Published As

Publication number Publication date
EP0478799B1 (de) 1996-12-04
KR100349999B1 (ko) 2002-12-11
KR920702797A (ko) 1992-10-06
WO1991016731A1 (en) 1991-10-31
US5293510A (en) 1994-03-08
EP0478799A1 (de) 1992-04-08
EP0478799A4 (en) 1992-10-21
DE69123422D1 (de) 1997-01-16

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