DE69124009D1 - Dünnfilmtransistor und Verfahren zur Herstellung - Google Patents

Dünnfilmtransistor und Verfahren zur Herstellung

Info

Publication number
DE69124009D1
DE69124009D1 DE69124009T DE69124009T DE69124009D1 DE 69124009 D1 DE69124009 D1 DE 69124009D1 DE 69124009 T DE69124009 T DE 69124009T DE 69124009 T DE69124009 T DE 69124009T DE 69124009 D1 DE69124009 D1 DE 69124009D1
Authority
DE
Germany
Prior art keywords
manufacturing
thin film
film transistor
transistor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69124009T
Other languages
English (en)
Other versions
DE69124009T2 (de
Inventor
Satoshi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69124009D1 publication Critical patent/DE69124009D1/de
Publication of DE69124009T2 publication Critical patent/DE69124009T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
DE69124009T 1990-06-08 1991-06-04 Dünnfilmtransistor und Verfahren zur Herstellung Expired - Lifetime DE69124009T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2150151A JPH0442579A (ja) 1990-06-08 1990-06-08 薄膜トランジスタ及び製造方法

Publications (2)

Publication Number Publication Date
DE69124009D1 true DE69124009D1 (de) 1997-02-20
DE69124009T2 DE69124009T2 (de) 1997-05-22

Family

ID=15490616

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124009T Expired - Lifetime DE69124009T2 (de) 1990-06-08 1991-06-04 Dünnfilmtransistor und Verfahren zur Herstellung

Country Status (6)

Country Link
US (2) US5208476A (de)
EP (1) EP0460605B1 (de)
JP (1) JPH0442579A (de)
KR (1) KR920001763A (de)
DE (1) DE69124009T2 (de)
TW (1) TW204414B (de)

Families Citing this family (55)

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EP0459763B1 (de) * 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Dünnfilmtransistoren
US8106867B2 (en) 1990-11-26 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
JP2794678B2 (ja) 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
KR960001611B1 (ko) 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
JPH04334054A (ja) * 1991-05-09 1992-11-20 Mitsubishi Electric Corp 半導体装置、電界効果トランジスタおよびその製造方法
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JP2845303B2 (ja) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP3173854B2 (ja) 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及び作成された半導体装置
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP3437863B2 (ja) * 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
US5953582A (en) * 1993-02-10 1999-09-14 Seiko Epson Corporation Active matrix panel manufacturing method including TFTS having variable impurity concentration levels
JPH06275640A (ja) * 1993-03-22 1994-09-30 Semiconductor Energy Lab Co Ltd 薄膜トランジスタおよびその作製方法
US5858821A (en) * 1993-05-12 1999-01-12 Micron Technology, Inc. Method of making thin film transistors
US6190933B1 (en) * 1993-06-30 2001-02-20 The United States Of America As Represented By The Secretary Of The Navy Ultra-high resolution liquid crystal display on silicon-on-sapphire
US6808965B1 (en) 1993-07-26 2004-10-26 Seiko Epson Corporation Methodology for fabricating a thin film transistor, including an LDD region, from amorphous semiconductor film deposited at 530° C. or less using low pressure chemical vapor deposition
JP3173926B2 (ja) 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
DE4435461C2 (de) 1993-10-06 2001-09-20 Micron Technology Inc N D Ges Dünnfilmtransistor und dessen Herstellverfahren
KR970004484B1 (ko) * 1993-12-16 1997-03-28 금성일렉트론 주식회사 반도체 소자의 ldd mosfet 제조방법
GB9406900D0 (en) * 1994-04-07 1994-06-01 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin -film transistors
DE19500380C2 (de) * 1994-05-20 2001-05-17 Mitsubishi Electric Corp Aktivmatrix-Flüssigkristallanzeige und Herstellungsverfahren dafür
JP2878137B2 (ja) * 1994-06-29 1999-04-05 シャープ株式会社 増幅型光電変換素子、それを用いた増幅型固体撮像装置、及び増幅型光電変換素子の製造方法
US5548132A (en) * 1994-10-24 1996-08-20 Micron Technology, Inc. Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions
KR0146899B1 (ko) * 1994-11-28 1998-09-15 김광호 액정 디스플레이 박막트랜지스터소자 및 제조 방법
US5567958A (en) * 1995-05-31 1996-10-22 Motorola, Inc. High-performance thin-film transistor and SRAM memory cell
US5920085A (en) * 1996-02-03 1999-07-06 Samsung Electronics Co., Ltd. Multiple floating gate field effect transistors and methods of operating same
KR0177785B1 (ko) * 1996-02-03 1999-03-20 김광호 오프셋 구조를 가지는 트랜지스터 및 그 제조방법
KR100219117B1 (ko) * 1996-08-24 1999-09-01 구자홍 박막트랜지스터 액정표시장치 및 그 제조방법
JP3525316B2 (ja) * 1996-11-12 2004-05-10 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
US6187639B1 (en) * 1997-04-21 2001-02-13 Taiwan Semiconductor Manufacturing Company Method to prevent gate oxide damage by post poly definition implantation
US6140160A (en) 1997-07-28 2000-10-31 Micron Technology, Inc. Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure
US5940691A (en) * 1997-08-20 1999-08-17 Micron Technology, Inc. Methods of forming SOI insulator layers and methods of forming transistor devices
US6043507A (en) * 1997-09-24 2000-03-28 Micron Technology, Inc. Thin film transistors and methods of making
US6344378B1 (en) 1999-03-01 2002-02-05 Micron Technology, Inc. Field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors
JP4141138B2 (ja) * 2001-12-21 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6768180B2 (en) * 2002-04-04 2004-07-27 C. Andre T. Salama Superjunction LDMOST using an insulator substrate for power integrated circuits
JP4631437B2 (ja) * 2002-06-07 2011-02-16 ソニー株式会社 表示装置及びその製造方法、並びに投射型表示装置
US20040169176A1 (en) * 2003-02-28 2004-09-02 Peterson Paul E. Methods of forming thin film transistors and related systems
TWI326790B (en) * 2005-02-16 2010-07-01 Au Optronics Corp Method of fabricating a thin film transistor of a thin film transistor liquid crystal display and method of fabricating a transistor liquid crystal display
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US8896065B2 (en) * 2008-04-14 2014-11-25 Sharp Laboratories Of America, Inc. Top gate thin film transistor with independent field control for off-current suppression
KR101675113B1 (ko) 2010-01-08 2016-11-11 삼성전자주식회사 트랜지스터 및 그 제조방법
KR101084261B1 (ko) 2010-03-17 2011-11-16 삼성모바일디스플레이주식회사 박막 트랜지스터, 이를 구비한 표시 장치, 및 그 제조 방법들
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102490881B1 (ko) * 2014-12-26 2023-01-25 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN105810748B (zh) * 2014-12-31 2018-12-21 清华大学 N型薄膜晶体管
KR102518726B1 (ko) 2015-10-19 2023-04-10 삼성디스플레이 주식회사 유기 발광 표시 장치
WO2020076758A1 (en) 2018-10-09 2020-04-16 Micron Technology, Inc. Devices including vertical transistors having hydrogen barrier materials, and related methods

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Also Published As

Publication number Publication date
DE69124009T2 (de) 1997-05-22
EP0460605A1 (de) 1991-12-11
TW204414B (de) 1993-04-21
KR920001763A (ko) 1992-01-30
US5208476A (en) 1993-05-04
JPH0442579A (ja) 1992-02-13
US5482870A (en) 1996-01-09
EP0460605B1 (de) 1997-01-08

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