DE69124190T2 - Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe - Google Patents

Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe

Info

Publication number
DE69124190T2
DE69124190T2 DE69124190T DE69124190T DE69124190T2 DE 69124190 T2 DE69124190 T2 DE 69124190T2 DE 69124190 T DE69124190 T DE 69124190T DE 69124190 T DE69124190 T DE 69124190T DE 69124190 T2 DE69124190 T2 DE 69124190T2
Authority
DE
Germany
Prior art keywords
compound
light emitting
emitting device
gallium nitride
device made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69124190T
Other languages
English (en)
Other versions
DE69124190D1 (de
Inventor
Masahiro Kotaki
Isamu Akasaki
Hiroshi Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nagoya University NUC
Japan Science and Technology Agency
Toyoda Gosei Co Ltd
Original Assignee
Nagoya University NUC
Research Development Corp of Japan
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2290059A external-priority patent/JPH04163971A/ja
Priority claimed from JP29005890A external-priority patent/JP2696095B2/ja
Application filed by Nagoya University NUC, Research Development Corp of Japan, Toyoda Gosei Co Ltd filed Critical Nagoya University NUC
Application granted granted Critical
Publication of DE69124190D1 publication Critical patent/DE69124190D1/de
Publication of DE69124190T2 publication Critical patent/DE69124190T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
DE69124190T 1990-10-27 1991-10-25 Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe Expired - Lifetime DE69124190T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2290059A JPH04163971A (ja) 1990-10-27 1990-10-27 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP29005890A JP2696095B2 (ja) 1990-10-27 1990-10-27 窒化ガリウム系化合物半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
DE69124190D1 DE69124190D1 (de) 1997-02-27
DE69124190T2 true DE69124190T2 (de) 1997-05-22

Family

ID=26557863

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124190T Expired - Lifetime DE69124190T2 (de) 1990-10-27 1991-10-25 Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe

Country Status (4)

Country Link
US (1) US5281830A (de)
EP (1) EP0483688B1 (de)
CA (1) CA2054242C (de)
DE (1) DE69124190T2 (de)

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US5661313A (en) * 1993-09-09 1997-08-26 The United States Of America As Represented By The Secretary Of The Navy Electroluminescent device in silicon on sapphire
DE69431333T2 (de) * 1993-10-08 2003-07-31 Mitsubishi Cable Ind Ltd GaN-Einkristall
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JP3164016B2 (ja) * 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
US5717226A (en) * 1996-09-18 1998-02-10 Industrial Technology Research Institute Light-emitting diodes and method of manufacturing the same
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JPH10270802A (ja) * 1997-03-25 1998-10-09 Sharp Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法
US5891790A (en) * 1997-06-17 1999-04-06 The Regents Of The University Of California Method for the growth of P-type gallium nitride and its alloys
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
KR100304881B1 (ko) * 1998-10-15 2001-10-12 구자홍 Gan계화합물반도체및그의결정성장방법
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (de) 1999-03-04 2009-12-16 Nichia Corporation Nitridhalbleiterlaserelement
US6534332B2 (en) 2000-04-21 2003-03-18 The Regents Of The University Of California Method of growing GaN films with a low density of structural defects using an interlayer
US6943128B2 (en) * 2000-08-24 2005-09-13 Toyoda Gosei Co., Ltd. Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element
JP2002075965A (ja) * 2000-08-25 2002-03-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
US6888171B2 (en) * 2000-12-22 2005-05-03 Dallan Luming Science & Technology Group Co., Ltd. Light emitting diode
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US6881983B2 (en) * 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US6911079B2 (en) * 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors
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TWI220578B (en) * 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
US20050179042A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices
US20050179046A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation P-type electrodes in gallium nitride-based light-emitting devices
US7001824B2 (en) * 2004-02-20 2006-02-21 Supernova Optoelectronics Corporation Gallium nitride vertical light emitting diode structure and method of separating a substrate and a thin film in the structure
JP4963816B2 (ja) * 2005-04-21 2012-06-27 シャープ株式会社 窒化物系半導体素子の製造方法および発光素子
KR20080106402A (ko) 2006-01-05 2008-12-05 일루미텍스, 인크. Ｌｅｄ로부터 광을 유도하기 위한 개별 광학 디바이스
US20090275266A1 (en) * 2006-10-02 2009-11-05 Illumitex, Inc. Optical device polishing
EP2070123A2 (de) * 2006-10-02 2009-06-17 Illumitex, Inc. Led-system und -verfahren
EP2240968A1 (de) * 2008-02-08 2010-10-20 Illumitex, Inc. System und verfahren zur bildung einer emitterschicht
KR100969128B1 (ko) 2008-05-08 2010-07-09 엘지이노텍 주식회사 발광 소자 및 그 제조방법
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
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Also Published As

Publication number Publication date
CA2054242A1 (en) 1992-04-28
EP0483688A2 (de) 1992-05-06
CA2054242C (en) 1996-06-25
DE69124190D1 (de) 1997-02-27
US5281830A (en) 1994-01-25
EP0483688B1 (de) 1997-01-15
EP0483688A3 (en) 1992-07-15

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