DE69125794D1 - Verfahren zum gleichzeitigen Herstellen eines Feldeffekttransistors mit isoliertem Gate und eines Bipolartransistors - Google Patents

Verfahren zum gleichzeitigen Herstellen eines Feldeffekttransistors mit isoliertem Gate und eines Bipolartransistors

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Publication number
DE69125794D1
DE69125794D1 DE69125794T DE69125794T DE69125794D1 DE 69125794 D1 DE69125794 D1 DE 69125794D1 DE 69125794 T DE69125794 T DE 69125794T DE 69125794 T DE69125794 T DE 69125794T DE 69125794 D1 DE69125794 D1 DE 69125794D1
Authority
DE
Germany
Prior art keywords
field effect
insulated gate
gate field
simultaneously producing
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125794T
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English (en)
Other versions
DE69125794T2 (de
Inventor
Michael C Smayling
Jack Reynolds
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
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Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69125794D1 publication Critical patent/DE69125794D1/de
Application granted granted Critical
Publication of DE69125794T2 publication Critical patent/DE69125794T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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DE69125794T 1990-11-23 1991-11-19 Verfahren zum gleichzeitigen Herstellen eines Feldeffekttransistors mit isoliertem Gate und eines Bipolartransistors Expired - Fee Related DE69125794T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61835190A 1990-11-23 1990-11-23

Publications (2)

Publication Number Publication Date
DE69125794D1 true DE69125794D1 (de) 1997-05-28
DE69125794T2 DE69125794T2 (de) 1997-11-27

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DE69125794T Expired - Fee Related DE69125794T2 (de) 1990-11-23 1991-11-19 Verfahren zum gleichzeitigen Herstellen eines Feldeffekttransistors mit isoliertem Gate und eines Bipolartransistors

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Country Link
US (2) US5275961A (de)
EP (1) EP0487022B1 (de)
JP (1) JPH06104442A (de)
KR (1) KR100212408B1 (de)
DE (1) DE69125794T2 (de)

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US5328866A (en) * 1992-09-21 1994-07-12 Siliconix Incorporated Low temperature oxide layer over field implant mask
TW273039B (de) * 1993-02-16 1996-03-21 At & T Corp
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US5275961A (en) 1994-01-04
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EP0487022A3 (en) 1992-07-15
DE69125794T2 (de) 1997-11-27
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EP0487022A2 (de) 1992-05-27
KR100212408B1 (ko) 1999-08-02

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