DE69126152T2 - Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung - Google Patents

Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung

Info

Publication number
DE69126152T2
DE69126152T2 DE69126152T DE69126152T DE69126152T2 DE 69126152 T2 DE69126152 T2 DE 69126152T2 DE 69126152 T DE69126152 T DE 69126152T DE 69126152 T DE69126152 T DE 69126152T DE 69126152 T2 DE69126152 T2 DE 69126152T2
Authority
DE
Germany
Prior art keywords
light emitting
emitting device
semiconductor light
compound semiconductor
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69126152T
Other languages
English (en)
Other versions
DE69126152D1 (de
Inventor
Katsuhide Manabe
Akira Mabuchi
Hisaki Kato
Michinari Sassa
Norikatsu Koide
Shiro Yamazaki
Masafumi Hashimoto
Isamu Akasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Nagoya University NUC
Research Development Corp of Japan
Toyoda Gosei Co Ltd
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5021290A external-priority patent/JP2681094B2/ja
Priority claimed from JP5020990A external-priority patent/JP2623466B2/ja
Priority claimed from JP5021190A external-priority patent/JP3193981B2/ja
Priority claimed from JP5021090A external-priority patent/JP3193980B2/ja
Application filed by Nagoya University NUC, Research Development Corp of Japan, Toyoda Gosei Co Ltd, Toyota Central R&D Labs Inc filed Critical Nagoya University NUC
Publication of DE69126152D1 publication Critical patent/DE69126152D1/de
Application granted granted Critical
Publication of DE69126152T2 publication Critical patent/DE69126152T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
DE69126152T 1990-02-28 1991-02-27 Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung Expired - Lifetime DE69126152T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP5021290A JP2681094B2 (ja) 1990-02-28 1990-02-28 窒化ガリウム系化合物半導体発光素子
JP5020990A JP2623466B2 (ja) 1990-02-28 1990-02-28 窒化ガリウム系化合物半導体発光素子
JP5021190A JP3193981B2 (ja) 1990-02-28 1990-02-28 窒化ガリウム系化合物半導体発光素子
JP5021090A JP3193980B2 (ja) 1990-02-28 1990-02-28 窒化ガリウム系化合物半導体発光素子

Publications (2)

Publication Number Publication Date
DE69126152D1 DE69126152D1 (de) 1997-06-26
DE69126152T2 true DE69126152T2 (de) 1997-11-13

Family

ID=27462459

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126152T Expired - Lifetime DE69126152T2 (de) 1990-02-28 1991-02-27 Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung

Country Status (4)

Country Link
US (4) US5733796A (de)
EP (1) EP0444630B1 (de)
CA (1) CA2037198C (de)
DE (1) DE69126152T2 (de)

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KR100981275B1 (ko) * 2008-09-25 2010-09-10 주식회사 에피밸리 3족 질화물 반도체 발광소자
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Also Published As

Publication number Publication date
CA2037198C (en) 1996-04-23
DE69126152D1 (de) 1997-06-26
US6607595B1 (en) 2003-08-19
EP0444630B1 (de) 1997-05-21
US6249012B1 (en) 2001-06-19
US5733796A (en) 1998-03-31
EP0444630A1 (de) 1991-09-04
US6593599B1 (en) 2003-07-15
CA2037198A1 (en) 1991-08-29

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