DE69127731D1 - Photovoltaischer Wandler - Google Patents

Photovoltaischer Wandler

Info

Publication number
DE69127731D1
DE69127731D1 DE69127731T DE69127731T DE69127731D1 DE 69127731 D1 DE69127731 D1 DE 69127731D1 DE 69127731 T DE69127731 T DE 69127731T DE 69127731 T DE69127731 T DE 69127731T DE 69127731 D1 DE69127731 D1 DE 69127731D1
Authority
DE
Germany
Prior art keywords
photovoltaic converter
photovoltaic
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127731T
Other languages
English (en)
Other versions
DE69127731T2 (de
Inventor
Isamu Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69127731D1 publication Critical patent/DE69127731D1/de
Application granted granted Critical
Publication of DE69127731T2 publication Critical patent/DE69127731T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
DE69127731T 1990-08-02 1991-07-31 Photovoltaischer Wandler Expired - Fee Related DE69127731T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20396790 1990-08-02
JP3208804A JP3031756B2 (ja) 1990-08-02 1991-07-26 光電変換装置

Publications (2)

Publication Number Publication Date
DE69127731D1 true DE69127731D1 (de) 1997-10-30
DE69127731T2 DE69127731T2 (de) 1998-02-12

Family

ID=26514204

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127731T Expired - Fee Related DE69127731T2 (de) 1990-08-02 1991-07-31 Photovoltaischer Wandler

Country Status (4)

Country Link
US (1) US5214272A (de)
EP (1) EP0469878B1 (de)
JP (1) JP3031756B2 (de)
DE (1) DE69127731T2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2690612B2 (ja) * 1990-10-05 1997-12-10 キヤノン株式会社 光電変換装置
CA2096551A1 (en) * 1992-05-22 1993-11-23 Masanori Nishiguchi Semiconductor device
JPH05335549A (ja) * 1992-06-01 1993-12-17 Matsushita Electric Ind Co Ltd 固体撮像装置およびその駆動方法
US5608455A (en) * 1992-07-30 1997-03-04 Fuji Photo Film Co., Ltd Interline transfer CCD image sensor with reduced dark current
US5784178A (en) * 1996-03-06 1998-07-21 Dyna Image Corporation High performance contact image sensor
DE59707575D1 (de) * 1997-07-07 2002-07-25 Stuttgart Mikroelektronik Verfahren und schaltungsanordnung zur kompensation temperatur-, spannungs- sowie herstellungsbedingter schwankungen bei cmos-bildsensoren
US6005619A (en) * 1997-10-06 1999-12-21 Photobit Corporation Quantum efficiency improvements in active pixel sensors
US6734906B1 (en) * 1998-09-02 2004-05-11 Canon Kabushiki Kaisha Image pickup apparatus with photoelectric conversion portions arranged two dimensionally
US6721005B1 (en) * 1998-12-03 2004-04-13 Sony Corporation Solid state image sensor having different structures for effective pixel area and optical black area
DE19907972A1 (de) * 1999-02-24 2000-08-31 Bosch Gmbh Robert Bildzelle
US6326601B1 (en) 1999-07-19 2001-12-04 Agilent Technologies, Inc. Optical barrier
US6453008B1 (en) * 1999-07-29 2002-09-17 Kabushiki Kaisha Toshiba Radiation detector noise reduction method and radiation detector
DE19945023C2 (de) * 1999-09-20 2003-04-24 Siemens Ag Flächenhafter Bilddetektor für elektromagnetische Strahlen, insbesondere Röntgenstrahlen
US6653617B2 (en) * 2000-07-03 2003-11-25 Canon Kabushiki Kaisha Photoelectric conversion device
DE10064580C1 (de) * 2000-12-18 2002-01-31 Infineon Technologies Ag Opto-elektronische Baugruppe zum Empfangen optischer Signale
US6806485B2 (en) * 2000-12-28 2004-10-19 Valeo Electrical Systems, Inc. Ambient light detector for off-the-glass rain sensor
JP4076792B2 (ja) * 2001-06-19 2008-04-16 独立行政法人科学技術振興機構 カンチレバーアレイ、その製造方法及びその装置
US7053458B2 (en) * 2002-04-30 2006-05-30 Ess Technology, Inc. Suppressing radiation charges from reaching dark signal sensor
US7902624B2 (en) * 2004-02-02 2011-03-08 Aptina Imaging Corporation Barrier regions for image sensors
US7002231B2 (en) * 2004-02-02 2006-02-21 Micron Technology, Inc. Barrier regions for image sensors
US7920185B2 (en) * 2004-06-30 2011-04-05 Micron Technology, Inc. Shielding black reference pixels in image sensors
JP4530747B2 (ja) * 2004-07-16 2010-08-25 富士通セミコンダクター株式会社 固体撮像装置及びその製造方法
US7154076B2 (en) * 2004-11-05 2006-12-26 C'est Image, Inc. Image sensing device including image sensor with high dynamic range
US7830412B2 (en) 2005-08-22 2010-11-09 Aptina Imaging Corporation Method and apparatus for shielding correction pixels from spurious charges in an imager
US7452743B2 (en) * 2005-09-01 2008-11-18 Aptina Imaging Corporation Microelectronic imaging units and methods of manufacturing microelectronic imaging units at the wafer level
KR100791346B1 (ko) * 2006-12-05 2008-01-03 삼성전자주식회사 이미지 센서 제조 방법 및 이에 따라 제조된 이미지 센서
GB2446821A (en) * 2007-02-07 2008-08-27 Sharp Kk An ambient light sensing system
JP2012033583A (ja) 2010-07-29 2012-02-16 Sony Corp 固体撮像素子及びその製造方法、並びに撮像装置
JP2012124318A (ja) * 2010-12-08 2012-06-28 Sony Corp 固体撮像素子の製造方法、固体撮像素子、および電子機器
CN103033262B (zh) * 2012-12-14 2015-04-15 京东方科技集团股份有限公司 光传感器件、显示装置及亮度检测方法
CN105190890B (zh) * 2013-03-29 2020-03-20 索尼公司 摄像元件和摄像装置
JP6387743B2 (ja) * 2013-12-16 2018-09-12 株式会社リコー 半導体装置および半導体装置の製造方法
CN105489625B (zh) * 2015-11-26 2018-08-28 上海集成电路研发中心有限公司 一种全局曝光像元的防漏光存储电容结构及其形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54130828A (en) * 1978-03-31 1979-10-11 Canon Inc Photo sensor array device and image scanner using it
JPS6044867B2 (ja) * 1980-04-17 1985-10-05 株式会社東芝 固体撮像装置
US4484223A (en) * 1980-06-12 1984-11-20 Canon Kabushiki Kaisha Image sensor
JPS5980964A (ja) * 1982-11-01 1984-05-10 Toshiba Corp 光電変換素子
JPS6181087A (ja) * 1984-09-28 1986-04-24 Olympus Optical Co Ltd 固体撮像装置
US4879470A (en) * 1987-01-16 1989-11-07 Canon Kabushiki Kaisha Photoelectric converting apparatus having carrier eliminating means
JP2584774B2 (ja) * 1987-06-12 1997-02-26 キヤノン株式会社 密着型光電変換装置
JP2690612B2 (ja) * 1990-10-05 1997-12-10 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
EP0469878B1 (de) 1997-09-24
EP0469878A1 (de) 1992-02-05
JP3031756B2 (ja) 2000-04-10
DE69127731T2 (de) 1998-02-12
US5214272A (en) 1993-05-25
JPH0529593A (ja) 1993-02-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee