DE69128307T2 - Prozess und Struktur für mehrschichtige Zusammenschaltung mit hoher Dichte - Google Patents

Prozess und Struktur für mehrschichtige Zusammenschaltung mit hoher Dichte

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Publication number
DE69128307T2
DE69128307T2 DE69128307T DE69128307T DE69128307T2 DE 69128307 T2 DE69128307 T2 DE 69128307T2 DE 69128307 T DE69128307 T DE 69128307T DE 69128307 T DE69128307 T DE 69128307T DE 69128307 T2 DE69128307 T2 DE 69128307T2
Authority
DE
Germany
Prior art keywords
high density
multilayer interconnection
interconnection
multilayer
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128307T
Other languages
English (en)
Other versions
DE69128307D1 (de
Inventor
Thomas Bert Gorczyca
Stanton Earl Weaver
Robert John Wojnarowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lockheed Martin Corp
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE69128307D1 publication Critical patent/DE69128307D1/de
Publication of DE69128307T2 publication Critical patent/DE69128307T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/25Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857Multilayer substrates
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894Materials of the insulating layers or coatings
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    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383Multilayer substrates
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    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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    • H01L2224/241Disposition
    • H01L2224/24151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/82009Pre-treatment of the connector or the bonding area
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    • H01L2224/82035Reshaping, e.g. forming vias by heating means
    • H01L2224/82039Reshaping, e.g. forming vias by heating means using a laser
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    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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DE69128307T 1990-07-02 1991-07-01 Prozess und Struktur für mehrschichtige Zusammenschaltung mit hoher Dichte Expired - Fee Related DE69128307T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/546,959 US5161093A (en) 1990-07-02 1990-07-02 Multiple lamination high density interconnect process and structure employing a variable crosslinking adhesive

Publications (2)

Publication Number Publication Date
DE69128307D1 DE69128307D1 (de) 1998-01-15
DE69128307T2 true DE69128307T2 (de) 1998-06-25

Family

ID=24182728

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128307T Expired - Fee Related DE69128307T2 (de) 1990-07-02 1991-07-01 Prozess und Struktur für mehrschichtige Zusammenschaltung mit hoher Dichte

Country Status (4)

Country Link
US (1) US5161093A (de)
EP (1) EP0465199B1 (de)
JP (1) JP3246667B2 (de)
DE (1) DE69128307T2 (de)

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US5161093A (en) 1992-11-03
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JP3246667B2 (ja) 2002-01-15
DE69128307D1 (de) 1998-01-15
JPH04233265A (ja) 1992-08-21

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