DE69132217T2 - Strukturierte Maske mit transparenter Ätzstopschicht - Google Patents
Strukturierte Maske mit transparenter ÄtzstopschichtInfo
- Publication number
- DE69132217T2 DE69132217T2 DE69132217T DE69132217T DE69132217T2 DE 69132217 T2 DE69132217 T2 DE 69132217T2 DE 69132217 T DE69132217 T DE 69132217T DE 69132217 T DE69132217 T DE 69132217T DE 69132217 T2 DE69132217 T2 DE 69132217T2
- Authority
- DE
- Germany
- Prior art keywords
- stop layer
- etch stop
- structured mask
- transparent etch
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP41562390A JP3036085B2 (ja) | 1990-12-28 | 1990-12-28 | 光学マスクとその欠陥修正方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69132217D1 DE69132217D1 (de) | 2000-06-29 |
DE69132217T2 true DE69132217T2 (de) | 2001-03-01 |
Family
ID=18523960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69132217T Expired - Fee Related DE69132217T2 (de) | 1990-12-28 | 1991-12-23 | Strukturierte Maske mit transparenter Ätzstopschicht |
Country Status (4)
Country | Link |
---|---|
US (1) | US5876877A (de) |
EP (1) | EP0493963B1 (de) |
JP (1) | JP3036085B2 (de) |
DE (1) | DE69132217T2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05165189A (ja) * | 1991-12-12 | 1993-06-29 | Hitachi Ltd | 光学マスク及びその修正方法 |
JPH05241321A (ja) * | 1992-02-28 | 1993-09-21 | Hitachi Ltd | 光学マスク及びその修正方法 |
US5286581A (en) * | 1991-08-19 | 1994-02-15 | Motorola, Inc. | Phase-shift mask and method for making |
DE69228725T2 (de) * | 1991-09-20 | 1999-09-09 | At & T Corp | Verfahren zur Wiederherstellung lithographischen Phasenverschiebungsmasken |
EP0553543B1 (de) * | 1992-01-31 | 1997-12-29 | Mitsubishi Denki Kabushiki Kaisha | Phasenverschiebungsmaske und Verfahren zur Erzeugung eines Fotolackmusters unter Verwendung dieser Maske |
US5419988A (en) * | 1992-08-07 | 1995-05-30 | Dai Nippon Printing Co., Ltd. | Photomask blank and phase shift photomask |
JP3257893B2 (ja) * | 1993-10-18 | 2002-02-18 | 三菱電機株式会社 | 位相シフトマスク、その位相シフトマスクの製造方法およびその位相シフトマスクを用いた露光方法 |
JPH09304912A (ja) * | 1996-05-15 | 1997-11-28 | Mitsubishi Electric Corp | 位相シフトマスク、位相シフトマスク用ブランクスおよび位相シフトマスクの製造方法 |
KR0166837B1 (ko) * | 1996-06-27 | 1999-01-15 | 문정환 | 위상반전 마스크 및 그 제조방법 |
KR100253345B1 (ko) * | 1997-11-07 | 2000-06-01 | 김영환 | 반도체 소자의 마스크 제조방법 |
AU2002236520A1 (en) * | 2000-12-01 | 2002-06-11 | Unaxis Usa Inc. | Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask |
US20050026053A1 (en) * | 2002-08-27 | 2005-02-03 | Martin Patrick M. | Photomask having an internal substantially transparent etch stop layer |
US7049034B2 (en) * | 2003-09-09 | 2006-05-23 | Photronics, Inc. | Photomask having an internal substantially transparent etch stop layer |
US7022436B2 (en) * | 2003-01-14 | 2006-04-04 | Asml Netherlands B.V. | Embedded etch stop for phase shift masks and planar phase shift masks to reduce topography induced and wave guide effects |
US20070264421A1 (en) * | 2003-04-11 | 2007-11-15 | Dieter Meier | Method for Producing Multiple Layer Systems |
JP2006195126A (ja) * | 2005-01-13 | 2006-07-27 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスクの製造方法 |
US7846341B2 (en) * | 2006-12-04 | 2010-12-07 | Bacoustics, Llc | Method of ultrasonically treating a continuous flow of fluid |
KR102625449B1 (ko) * | 2015-05-15 | 2024-01-16 | 호야 가부시키가이샤 | 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
WO2017038213A1 (ja) * | 2015-08-31 | 2017-03-09 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法 |
JP7087705B2 (ja) * | 2018-06-14 | 2022-06-21 | 大日本印刷株式会社 | フォトマスク及びフォトマスクブランクス |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4401367A (en) * | 1980-11-03 | 1983-08-30 | United Technologies Corporation | Method for pattern masking objects and the products thereof |
JPS61278179A (ja) * | 1985-06-03 | 1986-12-09 | Agency Of Ind Science & Technol | 超電導回路形成用エッチング方法 |
US4767724A (en) * | 1986-03-27 | 1988-08-30 | General Electric Company | Unframed via interconnection with dielectric etch stop |
JP2646440B2 (ja) * | 1988-09-20 | 1997-08-27 | 富士通株式会社 | ジョセフソン接合素子の製造方法 |
JP2710967B2 (ja) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
US5234780A (en) * | 1989-02-13 | 1993-08-10 | Kabushiki Kaisha Toshiba | Exposure mask, method of manufacturing the same, and exposure method using the same |
EP0653679B1 (de) * | 1989-04-28 | 2002-08-21 | Fujitsu Limited | Maske, Verfahren zur Herstellung der Maske und Verfahren zur Musterherstellung mit einer Maske |
US5114813A (en) * | 1989-06-23 | 1992-05-19 | Schott Glass Technologies, Inc. | Method of forming stable images in electron beam writable glass compositions |
EP0451307B1 (de) * | 1990-04-09 | 1996-10-23 | Siemens Aktiengesellschaft | Phasenmaske für die Projektionsphotolithographie und Verfahren zu deren Herstellung |
-
1990
- 1990-12-28 JP JP41562390A patent/JP3036085B2/ja not_active Expired - Fee Related
-
1991
- 1991-12-23 EP EP91311985A patent/EP0493963B1/de not_active Expired - Lifetime
- 1991-12-23 DE DE69132217T patent/DE69132217T2/de not_active Expired - Fee Related
- 1991-12-27 US US07/813,387 patent/US5876877A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69132217D1 (de) | 2000-06-29 |
JPH04233541A (ja) | 1992-08-21 |
JP3036085B2 (ja) | 2000-04-24 |
US5876877A (en) | 1999-03-02 |
EP0493963A1 (de) | 1992-07-08 |
EP0493963B1 (de) | 2000-05-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |