DE69132622D1 - Verfahren zur Herstellung einer Phasenschieber-Fotomaske - Google Patents

Verfahren zur Herstellung einer Phasenschieber-Fotomaske

Info

Publication number
DE69132622D1
DE69132622D1 DE69132622T DE69132622T DE69132622D1 DE 69132622 D1 DE69132622 D1 DE 69132622D1 DE 69132622 T DE69132622 T DE 69132622T DE 69132622 T DE69132622 T DE 69132622T DE 69132622 D1 DE69132622 D1 DE 69132622D1
Authority
DE
Germany
Prior art keywords
manufacturing
phase shift
shift photomask
photomask
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132622T
Other languages
English (en)
Other versions
DE69132622T2 (de
Inventor
Koichi Mikami
Hiroyuki Miyashita
Yoichi Takahashi
Hiroshi Fujita
Masa-Aki Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2253717A external-priority patent/JPH04131853A/ja
Priority claimed from JP2253718A external-priority patent/JPH04131852A/ja
Priority claimed from JP2407929A external-priority patent/JPH04225353A/ja
Priority claimed from JP3033891A external-priority patent/JPH04356050A/ja
Priority claimed from JP4785091A external-priority patent/JP3046631B2/ja
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Publication of DE69132622D1 publication Critical patent/DE69132622D1/de
Application granted granted Critical
Publication of DE69132622T2 publication Critical patent/DE69132622T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69132622T 1990-09-21 1991-09-23 Verfahren zur Herstellung einer Phasenschieber-Fotomaske Expired - Fee Related DE69132622T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2253717A JPH04131853A (ja) 1990-09-21 1990-09-21 位相シフトフォトマスクの修正方法
JP2253718A JPH04131852A (ja) 1990-09-21 1990-09-21 位相シフト層を有するフォトマスクの製造方法
JP2407929A JPH04225353A (ja) 1990-12-27 1990-12-27 位相シフト層を有するフォトマスクの製造方法
JP3033891A JPH04356050A (ja) 1991-02-28 1991-02-28 位相シフト層を有するフォトマスクの製造方法
JP4785091A JP3046631B2 (ja) 1991-03-13 1991-03-13 位相シフトフォトマスクの製造方法

Publications (2)

Publication Number Publication Date
DE69132622D1 true DE69132622D1 (de) 2001-07-05
DE69132622T2 DE69132622T2 (de) 2002-02-07

Family

ID=27521565

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69131878T Expired - Fee Related DE69131878T2 (de) 1990-09-21 1991-09-23 Verfahren zur Herstellung einer Phasenverschiebungs-Photomaske
DE69132622T Expired - Fee Related DE69132622T2 (de) 1990-09-21 1991-09-23 Verfahren zur Herstellung einer Phasenschieber-Fotomaske

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69131878T Expired - Fee Related DE69131878T2 (de) 1990-09-21 1991-09-23 Verfahren zur Herstellung einer Phasenverschiebungs-Photomaske

Country Status (4)

Country Link
US (2) US5614336A (de)
EP (2) EP0773477B1 (de)
KR (1) KR100280036B1 (de)
DE (2) DE69131878T2 (de)

Families Citing this family (40)

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JP2922715B2 (ja) * 1992-06-02 1999-07-26 三菱電機株式会社 位相シフトパターンの欠陥修正方法
US5380609A (en) * 1992-07-30 1995-01-10 Dai Nippon Printing Co., Ltd. Method for fabricating photomasks having a phase shift layer comprising the use of a positive to negative resist, substrate imaging and heating
US5403682A (en) * 1992-10-30 1995-04-04 International Business Machines Corporation Alternating rim phase-shifting mask
JP2500050B2 (ja) * 1992-11-13 1996-05-29 インターナショナル・ビジネス・マシーンズ・コーポレイション リム型の位相シフト・マスクの形成方法
US5470681A (en) * 1993-12-23 1995-11-28 International Business Machines Corporation Phase shift mask using liquid phase oxide deposition
KR0143707B1 (ko) * 1994-06-23 1998-08-17 김주용 마스크 가장자리에서 투과되는 광의 강도를 보상하기 위한 위상반전 마스크
KR100399444B1 (ko) * 1995-06-30 2004-04-29 주식회사 하이닉스반도체 에지강조형위상반전마스크및그제조방법
US5780161A (en) * 1996-11-06 1998-07-14 Taiwan Semiconductor Manufacturing Company Ltd. Non-absorbing anti-reflective coated (ARC) reticle using thin dielectric films and method of forming the reticle
US6027815A (en) * 1996-11-06 2000-02-22 Taiwan Semiconductor Manufacturing Company Non-absorbing anti-reflective coated (ARC) reticle using thin dielectric films and method of forming reticle
US6524874B1 (en) * 1998-08-05 2003-02-25 Micron Technology, Inc. Methods of forming field emission tips using deposited particles as an etch mask
US6329118B1 (en) 1999-06-21 2001-12-11 Intel Corporation Method for patterning dual damascene interconnects using a sacrificial light absorbing material
JP3456461B2 (ja) * 2000-02-21 2003-10-14 Ｔｄｋ株式会社 パターニング方法、薄膜デバイスの製造方法及び薄膜磁気ヘッドの製造方法
US6479411B1 (en) * 2000-03-21 2002-11-12 Angela T. Hui Method for forming high quality multiple thickness oxide using high temperature descum
US6524755B2 (en) 2000-09-07 2003-02-25 Gray Scale Technologies, Inc. Phase-shift masks and methods of fabrication
US6713408B1 (en) * 2000-12-14 2004-03-30 Louisiana Tech University Foundation, Inc. Method of producing silica micro-structures from x-ray lithography of SOG materials
DE10131012C2 (de) * 2001-06-27 2003-06-26 Infineon Technologies Ag Verfahren zur Herstellung einer Phasenmaske
WO2003064065A1 (en) * 2002-01-25 2003-08-07 Supercritical Systems Inc. Method for reducing the formation of contaminants during supercritical carbon dioxide processes
US20050227187A1 (en) * 2002-03-04 2005-10-13 Supercritical Systems Inc. Ionic fluid in supercritical fluid for semiconductor processing
US7387868B2 (en) * 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
JP4207554B2 (ja) * 2002-12-12 2009-01-14 住友電気工業株式会社 光射出面上に回折光学膜を有する発光素子とその製造方法
KR100673099B1 (ko) * 2002-12-30 2007-01-22 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성 방법
JP4409362B2 (ja) * 2004-05-28 2010-02-03 富士通マイクロエレクトロニクス株式会社 レチクルの製造方法
US20060102282A1 (en) * 2004-11-15 2006-05-18 Supercritical Systems, Inc. Method and apparatus for selectively filtering residue from a processing chamber
KR100745065B1 (ko) * 2004-12-27 2007-08-01 주식회사 하이닉스반도체 위상반전 마스크의 성장성 이물질 제거방법
US20060186088A1 (en) * 2005-02-23 2006-08-24 Gunilla Jacobson Etching and cleaning BPSG material using supercritical processing
US20060226117A1 (en) * 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US7442636B2 (en) * 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) * 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US20060219268A1 (en) * 2005-03-30 2006-10-05 Gunilla Jacobson Neutralization of systemic poisoning in wafer processing
US20060223899A1 (en) * 2005-03-30 2006-10-05 Hillman Joseph T Removal of porogens and porogen residues using supercritical CO2
US20060225769A1 (en) * 2005-03-30 2006-10-12 Gentaro Goshi Isothermal control of a process chamber
US20070000519A1 (en) * 2005-06-30 2007-01-04 Gunilla Jacobson Removal of residues for low-k dielectric materials in wafer processing
JP2007149768A (ja) 2005-11-24 2007-06-14 Nec Electronics Corp 半導体装置の製造方法
US8003537B2 (en) * 2006-07-18 2011-08-23 Imec Method for the production of planar structures
KR100802226B1 (ko) 2006-12-21 2008-02-11 주식회사 하이닉스반도체 듀얼 다마신 패턴 형성 방법
KR100865558B1 (ko) * 2007-07-10 2008-10-28 주식회사 하이닉스반도체 포토마스크의 결함 수정방법
JP6196739B2 (ja) 2014-01-28 2017-09-13 東京エレクトロン株式会社 原子層堆積を用いずに自己整合ダブルパターニングを行う方法
TWI659430B (zh) 2014-05-14 2019-05-11 日商三菱化學股份有限公司 導電性組成物、帶電防止膜、積層體及其製造方法、以及光罩的製造方法
JP2016161873A (ja) 2015-03-04 2016-09-05 株式会社東芝 パターン形成方法および制御装置
US11966163B2 (en) * 2018-05-30 2024-04-23 Lg Chem, Ltd. Photomask for imprinting and manufacturing method therefor

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JPS5487478A (en) * 1977-12-23 1979-07-11 Nec Corp Photo mask blank substrate
US4411972A (en) * 1981-12-30 1983-10-25 International Business Machines Corporation Integrated circuit photomask
EP0090924B1 (de) 1982-04-05 1987-11-11 International Business Machines Corporation Verfahren zur Erhöhung der Bildauflösung einer Photomaske und Photomaske zur Dürchführung dieses Verfahrens
JPS6195356A (ja) * 1984-10-16 1986-05-14 Mitsubishi Electric Corp フオトマスクブランク
JPS61161739A (ja) * 1985-01-10 1986-07-22 Mitsubishi Electric Corp 配線パタ−ンの形成方法
JPS6259296A (ja) 1985-09-10 1987-03-14 Green Cross Corp:The ペプタイド誘導体
JPS6450425A (en) * 1987-08-20 1989-02-27 Toshiba Corp Formation of fine pattern
DE3855073T2 (de) * 1987-12-21 1996-10-02 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung von feinsten Metallfilmen und feinsten Metallbildern
JPH02211450A (ja) * 1989-02-10 1990-08-22 Fujitsu Ltd 位相シフトマスクおよびその製造方法
US5234780A (en) * 1989-02-13 1993-08-10 Kabushiki Kaisha Toshiba Exposure mask, method of manufacturing the same, and exposure method using the same
JP2862183B2 (ja) * 1989-04-28 1999-02-24 富士通株式会社 マスクの製造方法
JPH0378747A (ja) * 1989-08-23 1991-04-03 Hitachi Ltd マスク及びマスク製造方法
JP2864570B2 (ja) * 1989-10-27 1999-03-03 ソニー株式会社 露光マスク及び露光方法
EP0730200A3 (de) * 1990-01-12 1997-01-22 Sony Corp Phasenverschiebungsmaske und Verfahren zur Herstellung
JPH03228053A (ja) * 1990-02-01 1991-10-09 Fujitsu Ltd 光露光レチクル
JP2634289B2 (ja) * 1990-04-18 1997-07-23 三菱電機株式会社 位相シフトマスクの修正方法
TW198129B (de) * 1990-06-21 1993-01-11 Matsushita Electron Co Ltd
US5100503A (en) * 1990-09-14 1992-03-31 Ncr Corporation Silica-based anti-reflective planarizing layer

Also Published As

Publication number Publication date
EP0773477A1 (de) 1997-05-14
EP0477035A2 (de) 1992-03-25
DE69131878D1 (de) 2000-02-03
EP0477035B1 (de) 1999-12-29
US5614336A (en) 1997-03-25
EP0773477B1 (de) 2001-05-30
US5688617A (en) 1997-11-18
EP0477035A3 (en) 1992-10-21
DE69132622T2 (de) 2002-02-07
KR100280036B1 (ko) 2001-01-15
DE69131878T2 (de) 2000-07-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: LINDNER BLAUMEIER PATENT- UND RECHTSANWAELTE, 9040

8339 Ceased/non-payment of the annual fee