DE69132730T2 - Halbleiteranordnung mit verbesserter Leitungsführung - Google Patents
Halbleiteranordnung mit verbesserter LeitungsführungInfo
- Publication number
- DE69132730T2 DE69132730T2 DE69132730T DE69132730T DE69132730T2 DE 69132730 T2 DE69132730 T2 DE 69132730T2 DE 69132730 T DE69132730 T DE 69132730T DE 69132730 T DE69132730 T DE 69132730T DE 69132730 T2 DE69132730 T2 DE 69132730T2
- Authority
- DE
- Germany
- Prior art keywords
- region
- semiconductor arrangement
- improved wiring
- metal wiring
- separation region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000926 separation method Methods 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13962390 | 1990-05-31 | ||
JP13962490 | 1990-05-31 | ||
JP16994790 | 1990-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69132730D1 DE69132730D1 (de) | 2001-10-25 |
DE69132730T2 true DE69132730T2 (de) | 2002-07-04 |
Family
ID=27317906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69132730T Expired - Fee Related DE69132730T2 (de) | 1990-05-31 | 1991-05-29 | Halbleiteranordnung mit verbesserter Leitungsführung |
Country Status (7)
Country | Link |
---|---|
US (2) | US5200639A (de) |
EP (1) | EP0460861B1 (de) |
KR (1) | KR950007421B1 (de) |
AT (1) | ATE205963T1 (de) |
DE (1) | DE69132730T2 (de) |
MY (1) | MY108878A (de) |
SG (1) | SG46606A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3305415B2 (ja) * | 1992-06-18 | 2002-07-22 | キヤノン株式会社 | 半導体装置、インクジェットヘッド、および画像形成装置 |
US5534069A (en) * | 1992-07-23 | 1996-07-09 | Canon Kabushiki Kaisha | Method of treating active material |
US5580808A (en) * | 1992-07-30 | 1996-12-03 | Canon Kabushiki Kaisha | Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam |
US5652180A (en) * | 1993-06-28 | 1997-07-29 | Kawasaki Steel Corporation | Method of manufacturing semiconductor device with contact structure |
US6046079A (en) * | 1993-08-18 | 2000-04-04 | United Microelectronics Corporation | Method for prevention of latch-up of CMOS devices |
KR0175000B1 (ko) * | 1994-12-14 | 1999-02-01 | 윤종용 | 전자파 억제구조를 갖는 반도체 소자 |
US6001729A (en) * | 1995-01-10 | 1999-12-14 | Kawasaki Steel Corporation | Method of forming wiring structure for semiconductor device |
JPH08191054A (ja) * | 1995-01-10 | 1996-07-23 | Kawasaki Steel Corp | 半導体装置及びその製造方法 |
JPH08255907A (ja) * | 1995-01-18 | 1996-10-01 | Canon Inc | 絶縁ゲート型トランジスタ及びその製造方法 |
KR0183729B1 (ko) * | 1995-08-18 | 1999-04-15 | 김광호 | 극 박막의 금속층 형성방법 및 이를 이용한 배선 형성방법 |
JP3381767B2 (ja) * | 1997-09-22 | 2003-03-04 | 東京エレクトロン株式会社 | 成膜方法および半導体装置の製造方法 |
JP3472742B2 (ja) * | 2000-03-31 | 2003-12-02 | Necエレクトロニクス株式会社 | 半導体記憶装置 |
US6653617B2 (en) | 2000-07-03 | 2003-11-25 | Canon Kabushiki Kaisha | Photoelectric conversion device |
US20020155261A1 (en) * | 2001-04-24 | 2002-10-24 | Sung-Hsiung Wang | Method for forming interconnect structure with low dielectric constant |
AU2002352783A1 (en) * | 2001-11-20 | 2003-06-10 | The Regents Of The University Of California | Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications |
TW578321B (en) * | 2002-10-02 | 2004-03-01 | Topro Technology Inc | Complementary metal-oxide semiconductor structure for a battery protection circuit and battery protection circuit therewith |
US6812486B1 (en) * | 2003-02-20 | 2004-11-02 | National Semiconductor Corporation | Conductive structure and method of forming the structure |
US6815714B1 (en) * | 2003-02-20 | 2004-11-09 | National Semiconductor Corporation | Conductive structure in a semiconductor material |
DE10346312B4 (de) * | 2003-10-06 | 2015-04-09 | Infineon Technologies Ag | Halbleiterbauteil mit mehreren parallel bzw. seriell miteinander verschalteten Funktionselementen |
CN1294647C (zh) * | 2003-11-25 | 2007-01-10 | 上海华虹Nec电子有限公司 | 一种降低rfcmos器件噪声的方法 |
US7902624B2 (en) * | 2004-02-02 | 2011-03-08 | Aptina Imaging Corporation | Barrier regions for image sensors |
US7002231B2 (en) * | 2004-02-02 | 2006-02-21 | Micron Technology, Inc. | Barrier regions for image sensors |
US7920185B2 (en) * | 2004-06-30 | 2011-04-05 | Micron Technology, Inc. | Shielding black reference pixels in image sensors |
EP1724822A3 (de) * | 2005-05-17 | 2007-01-24 | Sumco Corporation | Halbleitersubstrat und Verfahren zu dessen Herstellung |
JP4241856B2 (ja) * | 2006-06-29 | 2009-03-18 | 三洋電機株式会社 | 半導体装置および半導体装置の製造方法 |
US7791170B2 (en) * | 2006-07-10 | 2010-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a deep junction for electrical crosstalk reduction of an image sensor |
US7989282B2 (en) | 2009-03-26 | 2011-08-02 | International Business Machines Corporation | Structure and method for latchup improvement using through wafer via latchup guard ring |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4044452A (en) * | 1976-10-06 | 1977-08-30 | International Business Machines Corporation | Process for making field effect and bipolar transistors on the same semiconductor chip |
JPS5779647A (en) * | 1980-11-05 | 1982-05-18 | Ricoh Co Ltd | Master slice chip |
JPS5851537A (ja) * | 1981-09-24 | 1983-03-26 | Ricoh Co Ltd | マスタスライスチツプ |
US4472728A (en) * | 1982-02-19 | 1984-09-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Imaging X-ray spectrometer |
JPS594121A (ja) * | 1982-06-30 | 1984-01-10 | Mitsubishi Electric Corp | 半導体装置 |
JPS59165455A (ja) * | 1983-03-10 | 1984-09-18 | Toshiba Corp | 半導体装置 |
JPS60148147A (ja) * | 1984-01-13 | 1985-08-05 | Nec Corp | 半導体装置 |
JPS63116445A (ja) * | 1986-11-04 | 1988-05-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPS63156373A (ja) * | 1986-12-19 | 1988-06-29 | Matsushita Electric Works Ltd | フオトダイオ−ドアレイの製法 |
US4819052A (en) * | 1986-12-22 | 1989-04-04 | Texas Instruments Incorporated | Merged bipolar/CMOS technology using electrically active trench |
JPS63217644A (ja) * | 1987-03-06 | 1988-09-09 | Fuji Electric Co Ltd | 半導体装置 |
US4977439A (en) * | 1987-04-03 | 1990-12-11 | Esquivel Agerico L | Buried multilevel interconnect system |
JPS6422045A (en) * | 1987-07-17 | 1989-01-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6437051A (en) * | 1987-07-31 | 1989-02-07 | Nec Corp | Manufacture of semiconductor device |
US5051792A (en) * | 1987-10-20 | 1991-09-24 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound for compound semiconductors |
US4924019A (en) * | 1987-12-21 | 1990-05-08 | Cvd Incorporated | Synthesis of high purity dimethylaluminum hydride |
JPH02185026A (ja) * | 1989-01-11 | 1990-07-19 | Nec Corp | Al薄膜の選択的形成方法 |
PT95232B (pt) * | 1989-09-09 | 1998-06-30 | Canon Kk | Processo de producao de uma pelicula de aluminio depositada |
JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
ATE139866T1 (de) * | 1990-02-19 | 1996-07-15 | Canon Kk | Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid |
JPH04346231A (ja) * | 1991-05-23 | 1992-12-02 | Canon Inc | 半導体装置の製造方法 |
US5447568A (en) * | 1991-12-26 | 1995-09-05 | Canon Kabushiki Kaisha | Chemical vapor deposition method and apparatus making use of liquid starting material |
-
1991
- 1991-05-29 EP EP91304866A patent/EP0460861B1/de not_active Expired - Lifetime
- 1991-05-29 US US07/707,022 patent/US5200639A/en not_active Expired - Fee Related
- 1991-05-29 DE DE69132730T patent/DE69132730T2/de not_active Expired - Fee Related
- 1991-05-29 SG SG1996006690A patent/SG46606A1/en unknown
- 1991-05-29 AT AT91304866T patent/ATE205963T1/de not_active IP Right Cessation
- 1991-05-31 KR KR1019910009064A patent/KR950007421B1/ko not_active IP Right Cessation
- 1991-05-31 MY MYPI91000953A patent/MY108878A/en unknown
-
1994
- 1994-11-16 US US08/341,965 patent/US5665630A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0460861A3 (en) | 1992-09-02 |
KR910020872A (ko) | 1991-12-20 |
EP0460861A2 (de) | 1991-12-11 |
KR950007421B1 (ko) | 1995-07-10 |
SG46606A1 (en) | 1998-02-20 |
US5200639A (en) | 1993-04-06 |
US5665630A (en) | 1997-09-09 |
DE69132730D1 (de) | 2001-10-25 |
MY108878A (en) | 1996-11-30 |
ATE205963T1 (de) | 2001-10-15 |
EP0460861B1 (de) | 2001-09-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |