DE69133359D1 - Verfahren zur Herstellung eines SOI-Substrats - Google Patents

Verfahren zur Herstellung eines SOI-Substrats

Info

Publication number
DE69133359D1
DE69133359D1 DE69133359T DE69133359T DE69133359D1 DE 69133359 D1 DE69133359 D1 DE 69133359D1 DE 69133359 T DE69133359 T DE 69133359T DE 69133359 T DE69133359 T DE 69133359T DE 69133359 D1 DE69133359 D1 DE 69133359D1
Authority
DE
Germany
Prior art keywords
production
soi substrate
porous monocrystalline
semiconductor layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69133359T
Other languages
English (en)
Other versions
DE69133359T2 (de
Inventor
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69133359D1 publication Critical patent/DE69133359D1/de
Application granted granted Critical
Publication of DE69133359T2 publication Critical patent/DE69133359T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
DE69133359T 1990-08-03 1991-08-02 Verfahren zur Herstellung eines SOI-Substrats Expired - Fee Related DE69133359T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20654890 1990-08-03
JP20654890 1990-08-03

Publications (2)

Publication Number Publication Date
DE69133359D1 true DE69133359D1 (de) 2004-03-11
DE69133359T2 DE69133359T2 (de) 2004-12-16

Family

ID=16525210

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69133359T Expired - Fee Related DE69133359T2 (de) 1990-08-03 1991-08-02 Verfahren zur Herstellung eines SOI-Substrats
DE69133004T Expired - Lifetime DE69133004T2 (de) 1990-08-03 1991-08-02 Verfahren zur Herstellung eines Halbleiterkörpers

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69133004T Expired - Lifetime DE69133004T2 (de) 1990-08-03 1991-08-02 Verfahren zur Herstellung eines Halbleiterkörpers

Country Status (10)

Country Link
US (2) US5371037A (de)
EP (3) EP0688048A3 (de)
KR (1) KR950014609B1 (de)
CN (1) CN1056940C (de)
AT (2) ATE217447T1 (de)
CA (1) CA2048339C (de)
DE (2) DE69133359T2 (de)
MY (1) MY141499A (de)
SG (1) SG59963A1 (de)
TW (1) TW334578B (de)

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CA2048339A1 (en) 1992-02-04
ATE217447T1 (de) 2002-05-15
US6150031A (en) 2000-11-21
ATE259098T1 (de) 2004-02-15
EP0688048A3 (de) 1996-02-28
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DE69133004T2 (de) 2002-10-02
EP0747935A2 (de) 1996-12-11
EP0688048A2 (de) 1995-12-20
CN1056940C (zh) 2000-09-27
EP0469630A3 (en) 1994-11-23
EP0747935A3 (de) 1997-10-01
DE69133359T2 (de) 2004-12-16
EP0469630B1 (de) 2002-05-08
MY141499A (en) 2010-05-14
EP0469630A2 (de) 1992-02-05

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