DE69201734D1 - Halbleiterscheiben-Reinigungsverfahren unter Benutzung eines Mischers und Vorrichtung dafür. - Google Patents

Halbleiterscheiben-Reinigungsverfahren unter Benutzung eines Mischers und Vorrichtung dafür.

Info

Publication number
DE69201734D1
DE69201734D1 DE69201734T DE69201734T DE69201734D1 DE 69201734 D1 DE69201734 D1 DE 69201734D1 DE 69201734 T DE69201734 T DE 69201734T DE 69201734 T DE69201734 T DE 69201734T DE 69201734 D1 DE69201734 D1 DE 69201734D1
Authority
DE
Germany
Prior art keywords
mixer
cleaning method
wafer cleaning
device therefor
therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69201734T
Other languages
English (en)
Other versions
DE69201734T2 (de
Inventor
Noriyoshi Mashimo
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69201734D1 publication Critical patent/DE69201734D1/de
Publication of DE69201734T2 publication Critical patent/DE69201734T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • B08B9/02Cleaning pipes or tubes or systems of pipes or tubes
    • B08B9/027Cleaning the internal surfaces; Removal of blockages
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/005Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer
DE69201734T 1991-01-28 1992-01-27 Halbleiterscheiben-Reinigungsverfahren unter Benutzung eines Mischers und Vorrichtung dafür. Expired - Fee Related DE69201734T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2680091 1991-01-28

Publications (2)

Publication Number Publication Date
DE69201734D1 true DE69201734D1 (de) 1995-04-27
DE69201734T2 DE69201734T2 (de) 1995-09-21

Family

ID=12203390

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69201734T Expired - Fee Related DE69201734T2 (de) 1991-01-28 1992-01-27 Halbleiterscheiben-Reinigungsverfahren unter Benutzung eines Mischers und Vorrichtung dafür.

Country Status (4)

Country Link
US (2) US5261966A (de)
EP (1) EP0497247B1 (de)
KR (1) KR960000374B1 (de)
DE (1) DE69201734T2 (de)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3261683B2 (ja) * 1991-05-31 2002-03-04 忠弘 大見 半導体の洗浄方法及び洗浄装置
US5417826A (en) * 1992-06-15 1995-05-23 Micron Technology, Inc. Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors
KR960002763B1 (ko) * 1992-12-24 1996-02-26 금성일렉트론주식회사 반도체 세정방법 및 세정용액
DE4316096C1 (de) * 1993-05-13 1994-11-10 Wacker Chemitronic Verfahren zur naßchemischen Behandlung scheibenförmiger Werkstücke
US5625915A (en) * 1993-05-14 1997-05-06 Cyclo3Pss Textile Systems, Inc. Laundry ozone injection system
US5911837A (en) * 1993-07-16 1999-06-15 Legacy Systems, Inc. Process for treatment of semiconductor wafers in a fluid
US5464480A (en) * 1993-07-16 1995-11-07 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid
JP3142195B2 (ja) * 1993-07-20 2001-03-07 大日本スクリーン製造株式会社 薬液供給装置
JP2586319B2 (ja) * 1993-12-15 1997-02-26 日本電気株式会社 半導体基板の研磨方法
JP2760418B2 (ja) * 1994-07-29 1998-05-28 住友シチックス株式会社 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法
JP3575859B2 (ja) * 1995-03-10 2004-10-13 株式会社東芝 半導体基板の表面処理方法及び表面処理装置
EP0731495B1 (de) * 1995-03-10 2000-09-27 ASTEC Halbleitertechnologie GmbH Verfahren und Vorrichtung zum Reinigen von Siliziumscheiben
WO1998001896A1 (fr) * 1996-07-03 1998-01-15 Ultraclean Technology Research Institute Appareil de lavage et procede de lavage
US6082373A (en) * 1996-07-05 2000-07-04 Kabushiki Kaisha Toshiba Cleaning method
US5922138A (en) * 1996-08-12 1999-07-13 Tokyo Electron Limited Liquid treatment method and apparatus
JP3274389B2 (ja) * 1996-08-12 2002-04-15 株式会社東芝 半導体基板の洗浄方法
US5800626A (en) * 1997-02-18 1998-09-01 International Business Machines Corporation Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates
JPH10261687A (ja) * 1997-03-18 1998-09-29 Furontetsuku:Kk 半導体等製造装置
KR100238234B1 (ko) * 1997-03-20 2000-01-15 윤종용 반도체소자용 인-시튜 세정장치 및 그를 이용한 반도체 소자의 세정방법
US5876516A (en) * 1997-03-28 1999-03-02 Norwood Dry Cleaning Unlimited Method for cleaning window blinds
US7378355B2 (en) * 1997-05-09 2008-05-27 Semitool, Inc. System and methods for polishing a wafer
US6869487B1 (en) 1997-05-09 2005-03-22 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US6701941B1 (en) * 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US6240933B1 (en) 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US7416611B2 (en) * 1997-05-09 2008-08-26 Semitool, Inc. Process and apparatus for treating a workpiece with gases
US7264680B2 (en) * 1997-05-09 2007-09-04 Semitool, Inc. Process and apparatus for treating a workpiece using ozone
US7163588B2 (en) * 1997-05-09 2007-01-16 Semitool, Inc. Processing a workpiece using water, a base, and ozone
US20020157686A1 (en) * 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US7404863B2 (en) * 1997-05-09 2008-07-29 Semitool, Inc. Methods of thinning a silicon wafer using HF and ozone
US20050034745A1 (en) * 1997-05-09 2005-02-17 Semitool, Inc. Processing a workpiece with ozone and a halogenated additive
US20050215063A1 (en) * 1997-05-09 2005-09-29 Bergman Eric J System and methods for etching a silicon wafer using HF and ozone
US5849091A (en) * 1997-06-02 1998-12-15 Micron Technology, Inc. Megasonic cleaning methods and apparatus
US6945257B2 (en) * 1997-06-23 2005-09-20 Princeton Trade & Technology Method for cleaning hollow tubing and fibers
US20040007255A1 (en) * 1997-06-20 2004-01-15 Labib Mohamed Emam Apparatus and method for cleaning pipelines, tubing and membranes using two-phase flow
JP3662111B2 (ja) * 1997-06-24 2005-06-22 アルプス電気株式会社 洗浄液の製造方法およびそのための装置
KR100290703B1 (ko) * 1997-08-26 2001-06-01 윤종용 정량공급조건을갖는반도체웨이퍼세정방법
US5807439A (en) * 1997-09-29 1998-09-15 Siemens Aktiengesellschaft Apparatus and method for improved washing and drying of semiconductor wafers
JPH11121417A (ja) * 1997-10-09 1999-04-30 Mitsubishi Electric Corp 半導体基板の処理システムおよび処理方法
US5971368A (en) 1997-10-29 1999-10-26 Fsi International, Inc. System to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized
US6273107B1 (en) * 1997-12-05 2001-08-14 Texas Instruments Incorporated Positive flow, positive displacement rinse tank
US6039055A (en) * 1998-01-08 2000-03-21 International Business Machines Corporation Wafer cleaning with dissolved gas concentration control
KR100572295B1 (ko) * 1998-04-16 2006-04-24 세미툴 인코포레이티드 반도체 웨이퍼와 같은 작업편을 가공하는 공정 및 장치
US5979474A (en) * 1998-05-12 1999-11-09 Sumitomo Sitix Corporation Cleaning equipment for semiconductor substrates
DE19825063A1 (de) 1998-06-04 1999-12-09 Astex Sorbios Gmbh Verfahren zur Unterdrückung der Zerfallsgeschwindigkeit von Ozon in ultrareinem Wasser
US6146468A (en) * 1998-06-29 2000-11-14 Speedfam-Ipec Corporation Semiconductor wafer treatment
US6021791A (en) * 1998-06-29 2000-02-08 Speedfam-Ipec Corporation Method and apparatus for immersion cleaning of semiconductor devices
DE19837041A1 (de) * 1998-08-14 2000-02-24 Messer Griesheim Gmbh Erzeugung von gebrauchsfertigen Lösungen
US6235641B1 (en) 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
US6173720B1 (en) * 1998-12-02 2001-01-16 International Business Machines Corporation Process for treating a semiconductor substrate
US6090217A (en) 1998-12-09 2000-07-18 Kittle; Paul A. Surface treatment of semiconductor substrates
US6261845B1 (en) * 1999-02-25 2001-07-17 Cfmt, Inc. Methods and systems for determining chemical concentrations and controlling the processing of semiconductor substrates
US6406551B1 (en) 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
EP1481741B1 (de) * 1999-07-23 2010-10-20 Semitool, Inc. Verfahren und System zum Behandeln eines Werkstückes wie eines Halbleiterwafers
JP3875456B2 (ja) * 2000-06-29 2007-01-31 株式会社東芝 洗浄方法および洗浄装置
JP2002316027A (ja) * 2001-04-19 2002-10-29 Ebara Corp ガス溶解水製造装置、およびその方法、超音波洗浄装置、およびその方法
GB2384185B (en) * 2001-12-06 2003-12-17 Barrie Mellor Cleaning process
US6880191B2 (en) * 2001-12-31 2005-04-19 Joe G. Bristor Spray caddy and method of dispensing chemicals
TW200303581A (en) * 2002-02-28 2003-09-01 Tech Ltd A Method and apparatus for cleaning and drying semiconductor wafer
JP2003266030A (ja) * 2002-03-15 2003-09-24 Seiko Epson Corp 被処理物の洗浄方法および装置並びにデバイスの製造方法およびデバイス
US7913703B1 (en) 2003-06-27 2011-03-29 Lam Research Corporation Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate
US8522801B2 (en) * 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7799141B2 (en) * 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US20040261823A1 (en) * 2003-06-27 2004-12-30 Lam Research Corporation Method and apparatus for removing a target layer from a substrate using reactive gases
US7737097B2 (en) * 2003-06-27 2010-06-15 Lam Research Corporation Method for removing contamination from a substrate and for making a cleaning solution
US8316866B2 (en) * 2003-06-27 2012-11-27 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7648584B2 (en) * 2003-06-27 2010-01-19 Lam Research Corporation Method and apparatus for removing contamination from substrate
US7416370B2 (en) * 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US7862662B2 (en) * 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US8522799B2 (en) * 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
US7568490B2 (en) * 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US8043441B2 (en) 2005-06-15 2011-10-25 Lam Research Corporation Method and apparatus for cleaning a substrate using non-Newtonian fluids
US7502114B2 (en) 2004-03-12 2009-03-10 Mks Instruments, Inc. Ozone concentration sensor
US20060074529A1 (en) * 2004-09-30 2006-04-06 Garcia James P Apparatus for dispensing precise volumes of fluid
US20070062372A1 (en) * 2005-09-20 2007-03-22 Ravi Jain Method of producing a mixture of ozone and high pressure carbon dioxide
SG154438A1 (en) * 2005-12-30 2009-08-28 Lam Res Corp Cleaning compound and method and system for using the cleaning compound
US20080148595A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Method and apparatus for drying substrates using a surface tensions reducing gas
US7862660B2 (en) 2007-01-12 2011-01-04 Princeton Trade & Technology, Inc. Device and method for fluid dynamics cleaning of constrained spaces
US7897213B2 (en) * 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US20080245390A1 (en) * 2007-04-03 2008-10-09 Lam Research Corporation Method for cleaning semiconductor wafer surfaces by applying periodic shear stress to the cleaning solution
US8226775B2 (en) 2007-12-14 2012-07-24 Lam Research Corporation Methods for particle removal by single-phase and two-phase media
US8226774B2 (en) 2008-09-30 2012-07-24 Princeton Trade & Technology, Inc. Method for cleaning passageways such an endoscope channels using flow of liquid and gas
US8114221B2 (en) * 2008-09-30 2012-02-14 Princeton Trade & Technology, Inc. Method and composition for cleaning tubular systems employing moving three-phase contact lines
WO2012030423A1 (en) * 2010-09-02 2012-03-08 Fujifilm Planar Solutions, LLC Cleaning method and system
JP2016164977A (ja) * 2015-02-27 2016-09-08 キヤノン株式会社 ナノインプリント用液体材料、ナノインプリント用液体材料の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、および電子部品の製造方法
KR102447374B1 (ko) * 2016-11-11 2022-09-23 엠케이에스 인스트루먼츠, 인코포레이티드 암모니아 가스가 용해되어 있는 탈이온수를 포함하는 전도성 액체를 생성하기 위한 시스템들 및 방법
KR20230165878A (ko) 2018-08-29 2023-12-05 엠케이에스 인스트루먼츠 인코포레이티드 오존수 전달 시스템 및 사용 방법
KR20210149799A (ko) 2019-04-08 2021-12-09 엠케이에스 인스트루먼츠, 인코포레이티드 감소된 용존 담체 가스 및 산소 함량을 갖는 용존 암모니아 용액을 생성하기 위한 시스템들 및 방법들

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3227166A (en) * 1962-09-12 1966-01-04 Tasope Ltd Etching machine
GB1363416A (en) * 1971-09-03 1974-08-14 Ames Crosta Mills & Co Ltd Biological filtration apparatus
US3882027A (en) * 1972-04-24 1975-05-06 Ici Ltd Random packing medium
USB480702I5 (de) * 1974-06-19 1976-01-27
US4481154A (en) * 1981-03-20 1984-11-06 Cal Gavin Limited Insert for placement in a vessel and method of forming the insert
US4485840A (en) * 1982-05-03 1984-12-04 Ashland Oil, Inc. Flushing system for a meter-mix-dispensing device
US4778532A (en) * 1985-06-24 1988-10-18 Cfm Technologies Limited Partnership Process and apparatus for treating wafers with process fluids
US4552783A (en) * 1984-11-05 1985-11-12 General Electric Company Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces
US4673443A (en) * 1985-03-18 1987-06-16 Motorola, Inc. Continuous ionizer for semiconductor manufacturing processes
JPS62213127A (ja) * 1986-03-13 1987-09-19 Nec Corp 半導体ウエハ−の洗浄装置
JPS6310529A (ja) * 1986-07-01 1988-01-18 Mitsubishi Electric Corp 洗浄装置
JPH02164035A (ja) * 1988-12-19 1990-06-25 Nec Corp 半導体基板の洗浄方法
JP2892742B2 (ja) * 1990-02-08 1999-05-17 東芝コンポーネンツ株式会社 メサ型半導体素子の洗浄方法
US5089084A (en) * 1990-12-03 1992-02-18 Micron Technology, Inc. Hydrofluoric acid etcher and cascade rinser

Also Published As

Publication number Publication date
KR960000374B1 (ko) 1996-01-05
EP0497247A1 (de) 1992-08-05
US5415191A (en) 1995-05-16
EP0497247B1 (de) 1995-03-22
DE69201734T2 (de) 1995-09-21
KR920015477A (ko) 1992-08-26
US5261966A (en) 1993-11-16

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