DE69205494T2 - Beschichtungssystem zur plasmachemischen Gasphasenabscheidung. - Google Patents

Beschichtungssystem zur plasmachemischen Gasphasenabscheidung.

Info

Publication number
DE69205494T2
DE69205494T2 DE69205494T DE69205494T DE69205494T2 DE 69205494 T2 DE69205494 T2 DE 69205494T2 DE 69205494 T DE69205494 T DE 69205494T DE 69205494 T DE69205494 T DE 69205494T DE 69205494 T2 DE69205494 T2 DE 69205494T2
Authority
DE
Germany
Prior art keywords
vapor deposition
chemical vapor
coating system
plasma chemical
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69205494T
Other languages
English (en)
Other versions
DE69205494D1 (de
Inventor
Kazutoshi Hamamoto
Satoshi Uchida
Masayoshi Murata
Yoshiaki Takeuchi
Masaru Kodama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Publication of DE69205494D1 publication Critical patent/DE69205494D1/de
Application granted granted Critical
Publication of DE69205494T2 publication Critical patent/DE69205494T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69205494T 1991-06-05 1992-05-21 Beschichtungssystem zur plasmachemischen Gasphasenabscheidung. Expired - Fee Related DE69205494T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3134259A JPH04362091A (ja) 1991-06-05 1991-06-05 プラズマ化学気相成長装置

Publications (2)

Publication Number Publication Date
DE69205494D1 DE69205494D1 (de) 1995-11-23
DE69205494T2 true DE69205494T2 (de) 1996-04-25

Family

ID=15124118

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69205494T Expired - Fee Related DE69205494T2 (de) 1991-06-05 1992-05-21 Beschichtungssystem zur plasmachemischen Gasphasenabscheidung.

Country Status (4)

Country Link
US (1) US5261962A (de)
EP (1) EP0517042B1 (de)
JP (1) JPH04362091A (de)
DE (1) DE69205494T2 (de)

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US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
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US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5587038A (en) * 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
US5521351A (en) * 1994-08-30 1996-05-28 Wisconsin Alumni Research Foundation Method and apparatus for plasma surface treatment of the interior of hollow forms
JP2770753B2 (ja) * 1994-09-16 1998-07-02 日本電気株式会社 プラズマ処理装置およびプラズマ処理方法
US6465743B1 (en) * 1994-12-05 2002-10-15 Motorola, Inc. Multi-strand substrate for ball-grid array assemblies and method
US5589737A (en) * 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
KR100606622B1 (ko) * 1994-12-06 2006-12-01 램 리써치 코포레이션 대형제품용플라스마처리기
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
US5874704A (en) 1995-06-30 1999-02-23 Lam Research Corporation Low inductance large area coil for an inductively coupled plasma source
AU742803B2 (en) * 1995-07-19 2002-01-10 Chung Chan A plasma source
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5731565A (en) * 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
GB2311164A (en) * 1996-03-13 1997-09-17 Atomic Energy Authority Uk Large area plasma generator
JP3437376B2 (ja) * 1996-05-21 2003-08-18 キヤノン株式会社 プラズマ処理装置及び処理方法
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
US5759280A (en) * 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
JP3739137B2 (ja) * 1996-06-18 2006-01-25 日本電気株式会社 プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置
US6626185B2 (en) * 1996-06-28 2003-09-30 Lam Research Corporation Method of depositing a silicon containing layer on a semiconductor substrate
US6087778A (en) * 1996-06-28 2000-07-11 Lam Research Corporation Scalable helicon wave plasma processing device with a non-cylindrical source chamber having a serpentine antenna
US5776798A (en) * 1996-09-04 1998-07-07 Motorola, Inc. Semiconductor package and method thereof
US5970907A (en) * 1997-01-27 1999-10-26 Canon Kabushiki Kaisha Plasma processing apparatus
AU7270398A (en) * 1997-05-02 1998-11-27 Frank Christian Doughty Method and apparatus for sputter cleaning lead frames
US6028395A (en) * 1997-09-16 2000-02-22 Lam Research Corporation Vacuum plasma processor having coil with added conducting segments to its peripheral part
EP0908923B1 (de) 1997-10-10 2003-04-02 European Community Vorrichtung zur Erzeugung eines ausgedehnten Induktionsplasmas für Plasmabehandlungen
US6395128B2 (en) 1998-02-19 2002-05-28 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
US6112697A (en) * 1998-02-19 2000-09-05 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods
US5944942A (en) * 1998-03-04 1999-08-31 Ogle; John Seldon Varying multipole plasma source
US6155199A (en) * 1998-03-31 2000-12-05 Lam Research Corporation Parallel-antenna transformer-coupled plasma generation system
JP3332857B2 (ja) * 1998-04-15 2002-10-07 三菱重工業株式会社 高周波プラズマ発生装置及び給電方法
US6204607B1 (en) 1998-05-28 2001-03-20 Applied Komatsu Technology, Inc. Plasma source with multiple magnetic flux sources each having a ferromagnetic core
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
US6222718B1 (en) 1998-11-12 2001-04-24 Lam Research Corporation Integrated power modules for plasma processing systems
US6303908B1 (en) * 1999-08-26 2001-10-16 Nichiyo Engineering Corporation Heat treatment apparatus
US6562684B1 (en) 2000-08-30 2003-05-13 Micron Technology, Inc. Methods of forming dielectric materials
US20020170677A1 (en) * 2001-04-07 2002-11-21 Tucker Steven D. RF power process apparatus and methods
JP3897620B2 (ja) * 2002-03-14 2007-03-28 三菱重工業株式会社 高周波電力供給構造およびそれを備えたプラズマｃｖｄ装置
JP3854909B2 (ja) * 2002-08-06 2006-12-06 株式会社日立製作所 プラズマ処理装置
KR100601558B1 (ko) * 2004-04-26 2006-07-19 삼성에스디아이 주식회사 고주파 안테나 및 이를 이용한 유도결합 플라즈마화학기상증착 장치
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
KR101591404B1 (ko) 2008-05-22 2016-02-03 가부시키가이샤 이엠디 플라즈마 생성장치 및 플라즈마 처리장치
JP5227245B2 (ja) * 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
JP6240441B2 (ja) * 2013-09-06 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9721759B1 (en) 2016-04-04 2017-08-01 Aixtron Se System and method for distributing RF power to a plasma source
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization

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US5055319A (en) * 1990-04-02 1991-10-08 The Regents Of The University Of California Controlled high rate deposition of metal oxide films

Also Published As

Publication number Publication date
EP0517042A1 (de) 1992-12-09
EP0517042B1 (de) 1995-10-18
DE69205494D1 (de) 1995-11-23
JPH04362091A (ja) 1992-12-15
US5261962A (en) 1993-11-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee