DE69205647D1 - Verfahren zur Herstellung von Diamantschichten mittels durch Mikrowellenplasma unterstützte CVD. - Google Patents

Verfahren zur Herstellung von Diamantschichten mittels durch Mikrowellenplasma unterstützte CVD.

Info

Publication number
DE69205647D1
DE69205647D1 DE69205647T DE69205647T DE69205647D1 DE 69205647 D1 DE69205647 D1 DE 69205647D1 DE 69205647 T DE69205647 T DE 69205647T DE 69205647 T DE69205647 T DE 69205647T DE 69205647 D1 DE69205647 D1 DE 69205647D1
Authority
DE
Germany
Prior art keywords
cvd
microwave plasma
supported
production
diamond layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69205647T
Other languages
English (en)
Other versions
DE69205647T2 (de
Inventor
Staffan Soederberg
Hamid Shahani
Mats Sjoestrand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sandvik AB
Original Assignee
Sandvik AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandvik AB filed Critical Sandvik AB
Application granted granted Critical
Publication of DE69205647D1 publication Critical patent/DE69205647D1/de
Publication of DE69205647T2 publication Critical patent/DE69205647T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
DE69205647T 1991-08-16 1992-08-14 Verfahren zur Herstellung von Diamantschichten mittels durch Mikrowellenplasma unterstützte CVD. Expired - Fee Related DE69205647T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9102378A SE502094C2 (sv) 1991-08-16 1991-08-16 Metod för diamantbeläggning med mikrovågsplasma

Publications (2)

Publication Number Publication Date
DE69205647D1 true DE69205647D1 (de) 1995-11-30
DE69205647T2 DE69205647T2 (de) 1996-03-21

Family

ID=20383487

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69205647T Expired - Fee Related DE69205647T2 (de) 1991-08-16 1992-08-14 Verfahren zur Herstellung von Diamantschichten mittels durch Mikrowellenplasma unterstützte CVD.

Country Status (7)

Country Link
US (2) US5482748A (de)
EP (1) EP0528778B1 (de)
JP (1) JPH05195225A (de)
AT (1) ATE129528T1 (de)
DE (1) DE69205647T2 (de)
SE (1) SE502094C2 (de)
ZA (1) ZA926149B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
US6030902A (en) * 1996-02-16 2000-02-29 Micron Technology Inc Apparatus and method for improving uniformity in batch processing of semiconductor wafers
US6344149B1 (en) 1998-11-10 2002-02-05 Kennametal Pc Inc. Polycrystalline diamond member and method of making the same
SE528670C2 (sv) * 2004-12-22 2007-01-16 Sandvik Intellectual Property Skär belagt med ett transparent färgskikt
CN100387753C (zh) * 2005-10-14 2008-05-14 南京航空航天大学 在球面衬底上制造金刚石涂层的方法及其装置
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
WO2012099700A1 (en) * 2010-12-31 2012-07-26 Solexel, Inc. Deposition systems and processes
US20130272928A1 (en) * 2012-04-12 2013-10-17 Devi Shanker Misra Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein
GB201222395D0 (en) * 2012-12-12 2013-01-23 Element Six Ltd Microwave plasma CVD synthetic diamond growth on non-planar and/or non-refractory substrates
WO2015006186A1 (en) * 2013-07-09 2015-01-15 Applied Materials, Inc. Thickness control variation
CN110331381A (zh) * 2019-06-11 2019-10-15 康佳集团股份有限公司 一种外延片生长炉、设备、mocvd方法及外延片
CN110983298A (zh) * 2019-12-24 2020-04-10 中国科学院半导体研究所 一种用于微波等离子体化学气相沉积装置的样品台结构
KR102512743B1 (ko) * 2020-12-18 2023-03-22 주식회사 케이디티다이아몬드 다이아몬드 합성용 마이크로파 플라즈마 cvd 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE442305B (sv) * 1984-06-27 1985-12-16 Santrade Ltd Forfarande for kemisk gasutfellning (cvd) for framstellning av en diamantbelagd sammansatt kropp samt anvendning av kroppen
EP0300047B1 (de) * 1987-01-26 1991-10-23 Shiseido Company Limited Künstliches glimmerpulver, verfahren zur herstellung und kosmetika, die dieses pulver enthalten
US5271971A (en) * 1987-03-30 1993-12-21 Crystallume Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material
JPS6461396A (en) * 1987-09-01 1989-03-08 Idemitsu Petrochemical Co Synthesis of diamond and installation therefor
US4804431A (en) * 1987-11-03 1989-02-14 Aaron Ribner Microwave plasma etching machine and method of etching
EP0327051B2 (de) * 1988-02-01 1997-09-17 Sumitomo Electric Industries Limited Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase
GB8810111D0 (en) * 1988-04-28 1988-06-02 Jones B L Diamond growth
US4943345A (en) * 1989-03-23 1990-07-24 Board Of Trustees Operating Michigan State University Plasma reactor apparatus and method for treating a substrate
DE3941837C2 (de) * 1989-12-19 1994-01-13 Bosch Gmbh Robert Widerstandsmeßfühler zur Erfassung des Sauerstoffgehaltes in Gasgemischen und Verfahren zu seiner Herstellung
US5236511A (en) * 1990-03-16 1993-08-17 Schott Glaswerke Plasma CVD process for coating a dome-shaped substrate
JP2913745B2 (ja) * 1990-04-10 1999-06-28 松下電器産業株式会社 真空蒸着装置
US5169676A (en) * 1991-05-16 1992-12-08 The United States Of America As Represented By The Secretary Of The Navy Control of crystallite size in diamond film chemical vapor deposition
DE4120176C1 (de) * 1991-06-19 1992-02-27 Schott Glaswerke, 6500 Mainz, De
US5175019A (en) * 1991-09-30 1992-12-29 Texas Instruments Incorporated Method for depositing a thin film
JP3253734B2 (ja) * 1992-06-19 2002-02-04 富士通株式会社 半導体装置製造用の石英製装置
FR2702088B1 (fr) * 1993-02-24 1995-05-24 Sgs Thomson Microelectronics Nacelle pour plaquettes de silicium.

Also Published As

Publication number Publication date
EP0528778B1 (de) 1995-10-25
SE502094C2 (sv) 1995-08-14
DE69205647T2 (de) 1996-03-21
US5567242A (en) 1996-10-22
SE9102378L (sv) 1993-02-17
US5482748A (en) 1996-01-09
ZA926149B (en) 1993-03-01
ATE129528T1 (de) 1995-11-15
SE9102378D0 (sv) 1991-08-16
JPH05195225A (ja) 1993-08-03
EP0528778A1 (de) 1993-02-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee