DE69206187D1 - Gerät für Plasmaverfahren. - Google Patents
Gerät für Plasmaverfahren.Info
- Publication number
- DE69206187D1 DE69206187D1 DE69206187T DE69206187T DE69206187D1 DE 69206187 D1 DE69206187 D1 DE 69206187D1 DE 69206187 T DE69206187 T DE 69206187T DE 69206187 T DE69206187 T DE 69206187T DE 69206187 D1 DE69206187 D1 DE 69206187D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma processes
- plasma
- processes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/3233—Discharge generated by other radiation using charged particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3122878A JPH04326725A (ja) | 1991-04-26 | 1991-04-26 | プラズマ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69206187D1 true DE69206187D1 (de) | 1996-01-04 |
DE69206187T2 DE69206187T2 (de) | 1996-05-02 |
Family
ID=14846876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69206187T Expired - Lifetime DE69206187T2 (de) | 1991-04-26 | 1992-04-02 | Gerät für Plasmaverfahren. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5368676A (de) |
EP (1) | EP0510401B1 (de) |
JP (1) | JPH04326725A (de) |
KR (1) | KR0177590B1 (de) |
DE (1) | DE69206187T2 (de) |
TW (1) | TW201854B (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122431A (en) * | 1988-09-14 | 1992-06-16 | Fujitsu Limited | Thin film formation apparatus |
US5565036A (en) * | 1994-01-19 | 1996-10-15 | Tel America, Inc. | Apparatus and method for igniting plasma in a process module |
EP0871795B1 (de) * | 1995-06-29 | 2008-12-31 | Lam Research Corporation | Skalierbare helicon-wellenplasmavorrichtung mit nichtzylindrischer quellenkammer |
US5882538A (en) * | 1995-08-28 | 1999-03-16 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates |
WO1997008362A1 (en) * | 1995-08-28 | 1997-03-06 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates |
US6027663A (en) * | 1995-08-28 | 2000-02-22 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates |
ES2279517T3 (es) * | 1995-10-27 | 2007-08-16 | APPLIED MATERIALS GMBH & CO. KG | Dispositivo para recubrir un sustrato. |
DE19540543A1 (de) * | 1995-10-31 | 1997-05-07 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens |
US5917285A (en) * | 1996-07-24 | 1999-06-29 | Georgia Tech Research Corporation | Apparatus and method for reducing operating voltage in gas discharge devices |
US6258287B1 (en) * | 1996-08-28 | 2001-07-10 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment |
US6033587A (en) * | 1996-09-20 | 2000-03-07 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma |
KR100496809B1 (ko) * | 1997-08-26 | 2005-09-06 | 인천광역시 | 플라즈마방전에의한배가스처리장치 |
JP4287936B2 (ja) * | 1999-02-01 | 2009-07-01 | 中外炉工業株式会社 | 真空成膜装置 |
US7129694B2 (en) * | 2002-05-23 | 2006-10-31 | Applied Materials, Inc. | Large substrate test system |
DE10227332A1 (de) * | 2002-06-19 | 2004-01-15 | Akt Electron Beam Technology Gmbh | Ansteuervorrichtung mit verbesserten Testeneigenschaften |
US7032536B2 (en) * | 2002-10-11 | 2006-04-25 | Sharp Kabushiki Kaisha | Thin film formation apparatus including engagement members for support during thermal expansion |
US7319335B2 (en) | 2004-02-12 | 2008-01-15 | Applied Materials, Inc. | Configurable prober for TFT LCD array testing |
US20060038554A1 (en) * | 2004-02-12 | 2006-02-23 | Applied Materials, Inc. | Electron beam test system stage |
US6833717B1 (en) * | 2004-02-12 | 2004-12-21 | Applied Materials, Inc. | Electron beam test system with integrated substrate transfer module |
US7355418B2 (en) * | 2004-02-12 | 2008-04-08 | Applied Materials, Inc. | Configurable prober for TFT LCD array test |
US7075323B2 (en) * | 2004-07-29 | 2006-07-11 | Applied Materials, Inc. | Large substrate test system |
US7535238B2 (en) * | 2005-04-29 | 2009-05-19 | Applied Materials, Inc. | In-line electron beam test system |
CN100358098C (zh) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺件处理装置 |
CN101400991B (zh) * | 2006-03-14 | 2013-03-20 | 应用材料公司 | 减小多个柱状电子束测试系统中的串扰的方法 |
US7602199B2 (en) | 2006-05-31 | 2009-10-13 | Applied Materials, Inc. | Mini-prober for TFT-LCD testing |
US7786742B2 (en) | 2006-05-31 | 2010-08-31 | Applied Materials, Inc. | Prober for electronic device testing on large area substrates |
US8900403B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
US9111728B2 (en) | 2011-04-11 | 2015-08-18 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
US9177756B2 (en) * | 2011-04-11 | 2015-11-03 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
US8951384B2 (en) | 2011-10-20 | 2015-02-10 | Applied Materials, Inc. | Electron beam plasma source with segmented beam dump for uniform plasma generation |
US9129777B2 (en) | 2011-10-20 | 2015-09-08 | Applied Materials, Inc. | Electron beam plasma source with arrayed plasma sources for uniform plasma generation |
US20130098555A1 (en) * | 2011-10-20 | 2013-04-25 | Applied Materials, Inc. | Electron beam plasma source with profiled conductive fins for uniform plasma generation |
US9443700B2 (en) | 2013-03-12 | 2016-09-13 | Applied Materials, Inc. | Electron beam plasma source with segmented suppression electrode for uniform plasma generation |
TWI573700B (zh) * | 2015-02-13 | 2017-03-11 | rong-gui Deng | Assembly equipment for loading equipment and its applications |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2438531C3 (de) * | 1974-08-10 | 1982-04-08 | Fa. Carl Freudenberg, 6940 Weinheim | Separatorenmaterial |
US4175029A (en) * | 1978-03-16 | 1979-11-20 | Dmitriev Jury A | Apparatus for ion plasma coating of articles |
US4269137A (en) * | 1979-03-19 | 1981-05-26 | Xerox Corporation | Pretreatment of substrates prior to thin film deposition |
US4333814A (en) * | 1979-12-26 | 1982-06-08 | Western Electric Company, Inc. | Methods and apparatus for improving an RF excited reactive gas plasma |
DE61906T1 (de) * | 1981-03-26 | 1983-05-26 | Inoue-Japax Research Inc., Yokohama, Kanagawa | Verfahren und vorrichtung zur bearbeitung eines werkstueckes mit energiereichen teilchen und ein auf diese weise bearbeitetes produkt. |
JPS6010731A (ja) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | プラズマエツチング装置 |
CH664768A5 (de) * | 1985-06-20 | 1988-03-31 | Balzers Hochvakuum | Verfahren zur beschichtung von substraten in einer vakuumkammer. |
DE3614398A1 (de) * | 1985-07-01 | 1987-01-08 | Balzers Hochvakuum | Anordnung zum behandeln von werkstuecken mit einer evakuierbaren kammer |
YU46728B (sh) * | 1986-10-23 | 1994-04-05 | VUJO dr. MILJEVIĆ | Jonsko-elektronski izvor sa šupljom anodom |
EP0297898B1 (de) * | 1987-07-02 | 1995-10-11 | Kabushiki Kaisha Toshiba | Verfahren zum Trockenätzen |
ATE65265T1 (de) * | 1987-08-26 | 1991-08-15 | Balzers Hochvakuum | Verfahren zur aufbringung von schichten auf substraten und vakuumbeschichtungsanlage zur durchfuehrung des verfahrens. |
JPH01270320A (ja) * | 1988-04-22 | 1989-10-27 | Seiko Epson Corp | 絶縁薄膜堆積装置 |
JPH0752635B2 (ja) * | 1988-10-18 | 1995-06-05 | 日新電機株式会社 | イオン源装置 |
JP3092717B2 (ja) * | 1990-03-02 | 2000-09-25 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | イオン注入システムのための電荷中性化装置 |
JP2892787B2 (ja) * | 1990-07-20 | 1999-05-17 | 東京エレクトロン株式会社 | 電気信号の抽出方法 |
-
1991
- 1991-04-26 JP JP3122878A patent/JPH04326725A/ja not_active Withdrawn
-
1992
- 1992-04-01 TW TW081102492A patent/TW201854B/zh active
- 1992-04-02 EP EP92105684A patent/EP0510401B1/de not_active Expired - Lifetime
- 1992-04-02 DE DE69206187T patent/DE69206187T2/de not_active Expired - Lifetime
- 1992-04-16 KR KR1019920006390A patent/KR0177590B1/ko not_active IP Right Cessation
-
1993
- 1993-12-09 US US08/164,874 patent/US5368676A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0510401A1 (de) | 1992-10-28 |
JPH04326725A (ja) | 1992-11-16 |
EP0510401B1 (de) | 1995-11-22 |
KR920020614A (ko) | 1992-11-21 |
US5368676A (en) | 1994-11-29 |
DE69206187T2 (de) | 1996-05-02 |
KR0177590B1 (ko) | 1999-04-15 |
TW201854B (de) | 1993-03-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |