DE69207123T2 - Opto-elektronisches Bauteil mit Wellenleiter und integriertem Photodetektor - Google Patents

Opto-elektronisches Bauteil mit Wellenleiter und integriertem Photodetektor

Info

Publication number
DE69207123T2
DE69207123T2 DE69207123T DE69207123T DE69207123T2 DE 69207123 T2 DE69207123 T2 DE 69207123T2 DE 69207123 T DE69207123 T DE 69207123T DE 69207123 T DE69207123 T DE 69207123T DE 69207123 T2 DE69207123 T2 DE 69207123T2
Authority
DE
Germany
Prior art keywords
opto
waveguide
electronic component
integrated photodetector
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69207123T
Other languages
English (en)
Other versions
DE69207123D1 (de
Inventor
Adrien Bruno
Louis Menigaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Publication of DE69207123D1 publication Critical patent/DE69207123D1/de
Application granted granted Critical
Publication of DE69207123T2 publication Critical patent/DE69207123T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/34—Optical coupling means utilising prism or grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
DE69207123T 1991-09-06 1992-09-03 Opto-elektronisches Bauteil mit Wellenleiter und integriertem Photodetektor Expired - Fee Related DE69207123T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9111044A FR2681146B1 (fr) 1991-09-06 1991-09-06 Dispositif optoelectronique a guide optique et a photodetecteur integres et procede de realisation d'un tel dispositif.

Publications (2)

Publication Number Publication Date
DE69207123D1 DE69207123D1 (de) 1996-02-08
DE69207123T2 true DE69207123T2 (de) 1996-08-14

Family

ID=9416709

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69207123T Expired - Fee Related DE69207123T2 (de) 1991-09-06 1992-09-03 Opto-elektronisches Bauteil mit Wellenleiter und integriertem Photodetektor

Country Status (5)

Country Link
US (1) US5261014A (de)
EP (1) EP0531215B1 (de)
JP (1) JPH05251718A (de)
DE (1) DE69207123T2 (de)
FR (1) FR2681146B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763933A (ja) * 1993-08-25 1995-03-10 Ricoh Co Ltd 光集積回路
FR2719159B1 (fr) * 1994-04-26 1996-06-14 Adrien Bruno Dispositif optoélectronique intégrant un photodétecteur à deux diodes.
US5566263A (en) * 1995-03-22 1996-10-15 Minnesota Mining And Manufacturing Company System for tuning an integrated optical switch element
US5822473A (en) * 1996-02-29 1998-10-13 Texas Instruments Incorporated Integrated microchip chemical sensor
US6058397A (en) * 1997-04-08 2000-05-02 Mitsubishi Electric Information Technology Center America, Inc. 3D virtual environment creation management and delivery system
FR2784200B1 (fr) * 1998-10-05 2002-08-30 Cit Alcatel Composant monolithique electro-optique multi-sections
GB0112046D0 (en) * 2001-05-17 2001-07-11 Farfield Sensors Ltd System

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929472A (ja) * 1982-08-12 1984-02-16 Matsushita Electric Ind Co Ltd 薄膜光導波路用基板
DE3876109D1 (de) * 1987-02-06 1993-01-07 Siemens Ag Monolithisch integrierte wellenleiter-fotodiodenkombination.
FR2613826B1 (fr) * 1987-04-07 1990-10-26 Commissariat Energie Atomique Capteur de deplacement en optique integree
DE3820171A1 (de) * 1988-06-14 1989-12-21 Messerschmitt Boelkow Blohm Wellenleiter/detektor-kombination
EP0361159A3 (de) * 1988-09-29 1991-07-03 Siemens Aktiengesellschaft Anordnung zur Herstellung einer Kopplung zwischen einem optischen Schichtwellenleiter und einem optischen Absorber
JPH0313906A (ja) * 1989-06-12 1991-01-22 Nippon Telegr & Teleph Corp <Ntt> 光集積回路
FR2655775B1 (fr) * 1989-12-13 1992-03-20 Menigaux Louis Procede de realisation d'une structure integree guide photodetecteur.
US5138676A (en) * 1990-06-15 1992-08-11 Aster Corporation Miniature fiberoptic bend device and method
JPH0457003A (ja) * 1990-06-27 1992-02-24 Victor Co Of Japan Ltd 光集積回路
US5170448A (en) * 1992-01-06 1992-12-08 Motorola, Inc. Optical waveguide apparatus and method for partially collecting light

Also Published As

Publication number Publication date
JPH05251718A (ja) 1993-09-28
EP0531215A1 (de) 1993-03-10
DE69207123D1 (de) 1996-02-08
FR2681146A1 (fr) 1993-03-12
FR2681146B1 (fr) 1993-10-29
US5261014A (en) 1993-11-09
EP0531215B1 (de) 1995-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee