DE69214087D1 - Diamant- oder diamantähnliche Ätzstopschicht für chemisch-mechanisches Polieren - Google Patents

Diamant- oder diamantähnliche Ätzstopschicht für chemisch-mechanisches Polieren

Info

Publication number
DE69214087D1
DE69214087D1 DE69214087T DE69214087T DE69214087D1 DE 69214087 D1 DE69214087 D1 DE 69214087D1 DE 69214087 T DE69214087 T DE 69214087T DE 69214087 T DE69214087 T DE 69214087T DE 69214087 D1 DE69214087 D1 DE 69214087D1
Authority
DE
Germany
Prior art keywords
diamond
stop layer
mechanical polishing
etch stop
chemical mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69214087T
Other languages
English (en)
Other versions
DE69214087T2 (de
Inventor
Mark Anthony Jaso
Paul Bradley Jones
Bernard Steele Meyerson
Vishnubhai Vitthalbhai Patel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69214087D1 publication Critical patent/DE69214087D1/de
Application granted granted Critical
Publication of DE69214087T2 publication Critical patent/DE69214087T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
DE69214087T 1991-10-30 1992-10-09 Diamant- oder diamantähnliche Ätzstopschicht für chemisch-mechanisches Polieren Expired - Fee Related DE69214087T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/784,280 US5246884A (en) 1991-10-30 1991-10-30 Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop

Publications (2)

Publication Number Publication Date
DE69214087D1 true DE69214087D1 (de) 1996-10-31
DE69214087T2 DE69214087T2 (de) 1997-04-03

Family

ID=25131947

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69214087T Expired - Fee Related DE69214087T2 (de) 1991-10-30 1992-10-09 Diamant- oder diamantähnliche Ätzstopschicht für chemisch-mechanisches Polieren

Country Status (4)

Country Link
US (1) US5246884A (de)
EP (1) EP0540444B1 (de)
JP (1) JPH081899B2 (de)
DE (1) DE69214087T2 (de)

Families Citing this family (112)

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US5633207A (en) * 1994-10-14 1997-05-27 Kabushiki Kaisha Toshiba Method of forming a wiring layer for a semiconductor device
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US5674784A (en) * 1996-10-02 1997-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming polish stop layer for CMP process
US5858870A (en) * 1996-12-16 1999-01-12 Chartered Semiconductor Manufacturing, Ltd. Methods for gap fill and planarization of intermetal dielectrics
US6069069A (en) * 1996-12-16 2000-05-30 Chartered Semiconductor Manufacturing, Ltd. Method for planarizing a low dielectric constant spin-on polymer using nitride etch stop
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US9463552B2 (en) 1997-04-04 2016-10-11 Chien-Min Sung Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods
US9199357B2 (en) 1997-04-04 2015-12-01 Chien-Min Sung Brazed diamond tools and methods for making the same
US7323049B2 (en) * 1997-04-04 2008-01-29 Chien-Min Sung High pressure superabrasive particle synthesis
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US9221154B2 (en) 1997-04-04 2015-12-29 Chien-Min Sung Diamond tools and methods for making the same
US9238207B2 (en) 1997-04-04 2016-01-19 Chien-Min Sung Brazed diamond tools and methods for making the same
US6679243B2 (en) 1997-04-04 2004-01-20 Chien-Min Sung Brazed diamond tools and methods for making
US9868100B2 (en) 1997-04-04 2018-01-16 Chien-Min Sung Brazed diamond tools and methods for making the same
US7124753B2 (en) * 1997-04-04 2006-10-24 Chien-Min Sung Brazed diamond tools and methods for making the same
US7368013B2 (en) * 1997-04-04 2008-05-06 Chien-Min Sung Superabrasive particle synthesis with controlled placement of crystalline seeds
US9409280B2 (en) 1997-04-04 2016-08-09 Chien-Min Sung Brazed diamond tools and methods for making the same
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US6130471A (en) * 1997-08-29 2000-10-10 The Whitaker Corporation Ballasting of high power silicon-germanium heterojunction biploar transistors
US6040225A (en) * 1997-08-29 2000-03-21 The Whitaker Corporation Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices
US6624064B1 (en) 1997-10-10 2003-09-23 Applied Materials, Inc. Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application
US6211065B1 (en) 1997-10-10 2001-04-03 Applied Materials, Inc. Method of depositing and amorphous fluorocarbon film using HDP-CVD
US6323119B1 (en) 1997-10-10 2001-11-27 Applied Materials, Inc. CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application
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JP3514091B2 (ja) * 1997-11-17 2004-03-31 三菱マテリアル株式会社 気相合成ダイヤモンド薄膜の表面研磨方法
US6025244A (en) * 1997-12-04 2000-02-15 Fujitsu Limited Self-aligned patterns by chemical-mechanical polishing particularly suited to the formation of MCM capacitors
US6291334B1 (en) * 1997-12-19 2001-09-18 Applied Materials, Inc. Etch stop layer for dual damascene process
US6091131A (en) * 1998-04-28 2000-07-18 International Business Machines Corporation Integrated circuit having crack stop for interlevel dielectric layers
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DE19829152A1 (de) * 1998-05-05 1999-11-18 United Microelectronics Corp Doppeltes Damaszierverfahren
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US5990493A (en) * 1998-05-14 1999-11-23 Advanced Micro Devices, Inc. Diamond etch stop rendered conductive by a gas cluster ion beam implant of titanium
US6072222A (en) * 1998-05-18 2000-06-06 Advanced Micro Devices, Inc. Silicon implantation into selective areas of a refractory metal to reduce consumption of silicon-based junctions during salicide formation
US5907780A (en) * 1998-06-17 1999-05-25 Advanced Micro Devices, Inc. Incorporating silicon atoms into a metal oxide gate dielectric using gas cluster ion beam implantation
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US6159786A (en) * 1998-12-14 2000-12-12 Taiwan Semiconductor Manufacturing Company Well-controlled CMP process for DRAM technology
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US6468135B1 (en) 1999-04-30 2002-10-22 International Business Machines Corporation Method and apparatus for multiphase chemical mechanical polishing
US6677637B2 (en) * 1999-06-11 2004-01-13 International Business Machines Corporation Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
TW418489B (en) * 1999-08-13 2001-01-11 Taiwan Semiconductor Mfg Manufacturing method of shallow trench isolation
JP2001085516A (ja) 1999-09-10 2001-03-30 Oki Electric Ind Co Ltd 半導体装置の製造方法
US7201645B2 (en) * 1999-11-22 2007-04-10 Chien-Min Sung Contoured CMP pad dresser and associated methods
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US8622787B2 (en) 2006-11-16 2014-01-07 Chien-Min Sung CMP pad dressers with hybridized abrasive surface and related methods
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JP5220049B2 (ja) * 2010-03-09 2013-06-26 三菱電機株式会社 炭化珪素半導体装置の製造方法
TWI464839B (zh) 2010-09-21 2014-12-11 Ritedia Corp 單層鑽石顆粒散熱器及其相關方法
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CN103909464B (zh) * 2013-01-09 2017-10-31 华邦电子股份有限公司 化学机械研磨方法与自我对准方法
CN113873738B (zh) * 2021-09-26 2024-01-12 中国工程物理研究院激光聚变研究中心 一种自支撑碳基电容器靶及其制备方法

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Also Published As

Publication number Publication date
EP0540444A1 (de) 1993-05-05
JPH081899B2 (ja) 1996-01-10
JPH05218000A (ja) 1993-08-27
EP0540444B1 (de) 1996-09-25
DE69214087T2 (de) 1997-04-03
US5246884A (en) 1993-09-21

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